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    TOSHIBA K2613 Search Results

    TOSHIBA K2613 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA K2613 Datasheets Context Search

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    toshiba k2613

    Abstract: K2613 2SK2613
    Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: Yfs = 6.0 S (typ.)


    Original     		PDF 2SK2613 toshiba k2613 K2613 2SK2613

    K2613

    Abstract: toshiba k2613 2SK2613
    Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type F-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) · High forward transfer admittance: ïYfsï = 6.0 S (typ.)


    Original     		PDF 2SK2613 K2613 toshiba k2613 2SK2613

    K2613

    Abstract: toshiba k2613 2SK2613
    Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF 2SK2613 910lled K2613 toshiba k2613 2SK2613

    toshiba k2613

    Abstract: K2613 K2613 TOSHIBA 2SK2613
    Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF 2SK2613 toshiba k2613 K2613 K2613 TOSHIBA 2SK2613

    Untitled

    Abstract: No abstract text available
    Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 1.4 Unit: mm (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF 2SK2613

    toshiba k2613

    Abstract: K2613
    Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF 2SK2613 toshiba k2613 K2613

    2SK2613

    Abstract: k2613 toshiba k2613 K2613 TOSHIBA K261
    Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF 2SK2613 2SK2613 k2613 toshiba k2613 K2613 TOSHIBA K261

    Untitled

    Abstract: No abstract text available
    Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF 2SK2613

    toshiba k2613

    Abstract: 2SK2613 K2613
    Text: 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIII 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF 2SK2613 910lled toshiba k2613 2SK2613 K2613

    toshiba k2613

    Abstract: K2613 2SK2613 SC-65
    Text: 2SK2613 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSIII 2SK2613 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 特 単位: mm 長 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 6.0 S (標準)


    Original     		PDF 2SK2613 2-16C1B SC-65 toshiba k2613 K2613 2SK2613 SC-65