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    TOSHIBA K2604 Search Results

    TOSHIBA K2604 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA K2604 Datasheets Context Search

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    K2604

    Abstract: toshiba transistor k2604 toshiba k2604 2SK2604
    Text: 2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2604 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : |Yfs| = 3.8 S (typ.) Low leakage current


    Original     		2SK2604 K2604 toshiba transistor k2604 toshiba k2604 2SK2604 PDF

    K2604

    Abstract: 2SK2604
    Text: 2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2604 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


    Original     		2SK2604 K2604 2SK2604 PDF

    toshiba k2604

    Abstract: toshiba transistor k2604 K2604
    Text: 2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2604 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


    Original     		2SK2604 toshiba k2604 toshiba transistor k2604 K2604 PDF

    K2604

    Abstract: toshiba k2604 toshiba transistor k2604 2SK2604
    Text: 2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2604 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


    Original     		2SK2604 K2604 toshiba k2604 toshiba transistor k2604 2SK2604 PDF