TOSHIBA IGBTS Search Results

TLP351

Abstract: fet drive inverter inverter air toshiba Power MOS FET Gate Drive
Contextual Info: TOSHIBA TENTATIVE TLP351 TOSHIBA PHOTOCOUPLER GaAIAs IRED & PHOTO-IC TLP351 INVERTER FOR AIR CONDITIONOR IGBT/Power MOS FET GATE DRIVE Unit mm INDUSTRIAL INVERTER The TOSHIBA TLP351 consists of a GaAIAs light emitting diode and a integrated photodetector.

TLP251F

Abstract: E67349 TLP251 VDE0884
Contextual Info: TOSHIBA TLP251F TOSHIBA PHOTOCOUPLER INVERTER FOR AIR CONDITIONOR GaAMs IRED & PHOTO-IC TLP251F INDUCTION HEATING TRANSISTOR INVERTER POWER MOS FET GATE DRIVE IGBT GATE DRIVE The Toshiba TLP251F consists of a GaA€As light emitting diode and a integrated photodetector.

Contextual Info: TOSHIBA MG50Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

MG15Q6ES50

Abstract: 15Q6ES50
Contextual Info: TOSHIBA MG15Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 15Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

MG25Q6ES51

Abstract: MG25Q6ES
Contextual Info: TOSHIBA MG25Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 2 5Q6ES51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

ksh 200 TRANSISTOR equivalent

Abstract: MG50Q6ES51 G50Q6ES51
Contextual Info: TOSHIBA MG50Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 50 Q6ES51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

MG15Q6ES51

Abstract: 15Q6ES51 transistor bc 930
Contextual Info: TOSHIBA MG15Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 1 5Q6ES51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

MG50Q6ES50

Abstract: P channel 600v 50a IGBT vqe 71
Contextual Info: TOSHIBA MG50Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 50 Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

MG25Q6ES50

Contextual Info: TOSHIBA MG25Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 2 5Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

MG50Q6ES40

Abstract: g50q6es40
Contextual Info: TOSHIBA MG50Q6ES40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage

Contextual Info: TOSHIBA MG50Q6ES51 MG50Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

Contextual Info: MG100J7KS50 TOSHIBA TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100J7KS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • The Electrodes are Isolated from Case. High Input Impedance 7 IGBTs Built into 1 Package. Enhancement-Mode

Contextual Info: TOSHIBA MP6759 TOSHIBA GTR MODULE MOTOR CONTROL APPLICATIONS SILICON N CHANNEL IGBT MP6759 HIGH POWER SWITCHING APPLICATIONS • • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage

MG50Q6ES50A

Abstract: vqe 71
Contextual Info: TOSHIBA MG50Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6 ES50A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

1ss421

Abstract: TMP86FH12MG SSM3J108TU SSM3K101TU SSM3K102TU SSM3K104TU SSM3K105TU SSM3K106TU SSM3K107TU SSM3K116TU
Contextual Info: TOSHIBA SEMICONDUCTOR BULLETIN EYE JANUARY 2006 VOLUME 162 CONTENTS INFORMATION Toshiba and NEC Electronics to Collaborate on 45-nanometer System LSI Process

MG150J7KS50

Contextual Info: TOSHIBA MG150J7KS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 1 50J7KS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • The Electrodes are Isolated from Case. High Input Impedance 7 IGBTs Built into 1 Package. Enhancement-Mode

MP6751

Abstract: 2-78A1A CS630
Contextual Info: TOSHIBA MP6751 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MP6751 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage

RG130

Abstract: igbt toshiba mg MG100J6ES50
Contextual Info: TOSHIBA MG100J6ES50 MG100J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. Enhancement-Mode.

MG75J6ES50

Contextual Info: TOSHIBA MG75J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75J6ES50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. Enhancement-Mode.

MG15Q6ES50

Abstract: MG15Q6ES50A 1.5A COMMON CATHODE
Contextual Info: TOSHIBA MG15Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 15Q6 ES50A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

MG8Q6ES42

Abstract: 2-93A3A ED0A L25X ED 03 Diode DIODE ED 16
Contextual Info: TOSHIBA MG8Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG8Q6ES42 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The Electrodes are Isolated From Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage

transistor ba 752

Contextual Info: TOSHIBA MP6754 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M P 6 7 54 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage

mg25q6es42

Abstract: SO120200
Contextual Info: TOSHIBA MG25Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES42 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage

2-78A1A

Abstract: MP6754 TF-035
Contextual Info: TOSHIBA MP6754 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M P6754 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage