TOSHIBA CODE IGBT Search Results

F2B transistor

Abstract: 3p transistor transistor TO-3P Outline Dimensions transistor 975 transistor 545
Contextual Info: Transistor Outline Package TO-3P LH Package Outline Dimensions Outline Dimensions Unit: mm 20.5 max 1.0 +0.3 –0.25 26.0 ±0.5 2.0 1.5 3.0 20.0 ±0.6 2.5 2.5 1.5 11.0 2.0 4.0 6.0 φ3.3 ±0.2 1 (Bottom view) Toshiba package name Toshiba package code Notes

TO-3P Jedec package outline

Abstract: 3p transistor transistor outline package 3
Contextual Info: Transistor Outline Package TO-3P W Package Outline Dimensions Outline Dimensions Unit: mm 0.8 +0.2 –0.1 15.5 ±0.3 A 20.0 ±0.3 3.0 max 4.5 φ3.2 ±0.2 A 1.0 +0.3 –0.25 5.45 1 2 3 3 0.8 +0.3 –0.1 5.45 1 (Bottom view) Toshiba package name Toshiba package code

transistor TO-3P Outline Dimensions

Abstract: TRANSISTOR 545 3p transistor TO-3P Jedec package outline TOSHIBA IGBT DATA BOOK
Contextual Info: Transistor Outline Package TO-3P L Package Outline Dimensions Outline Dimensions Unit: mm 20.5 max 26.0 ±0.5 11.0 2.0 4.0 6.0 φ3.3 ±0.2 3.0 1.0 +0.3 –0.25 20.0 ±0.6 2.5 2.5 3 1 (Bottom view) Toshiba package name Toshiba package code Notes • The above diagrams may not be actual sizes. Diagrams may be enlarged,

Contextual Info: Deca Power Device Package Straight Lead DP Package Outline Dimensions Outline Dimensions Unit: mm 1.7 ±0.2 6.8 max 0.6 max 5.5 ±0.2 5.2 ±0.2 0.95 max 12.0 min 0.6 ±0.15 3 2.3 2.3 3 1 (Bottom view) Toshiba package name Toshiba package code Notes • The above diagrams may not be actual sizes. Diagrams may be enlarged,

TOSHIBA IGBT DATA BOOK

Abstract: TO-220AB transistor package 10P1A
Contextual Info: Transistor Outline Package TO-220AB Package Outline Dimensions Outline Dimensions Unit: mm 1.32 15.7 max 3.0 φ3.6 ±0.2 6.7 max 10.3 max 2.5 max 12.6 min 1.6 max 0.76 3 2 3 0.5 1 Bottom view Toshiba package name Toshiba package code Notes • The above diagrams may not be actual sizes. Diagrams may be enlarged,

Contextual Info: GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit: mm • Enhancement-mode • Peak collector current: IC = 150 A max TSON-8 • Compact and Thin (TSON-8) package Rating Unit VCES 400 V DC VGES

Contextual Info: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Tc=70℃(max) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: GT5G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 Strobe Flash Applications Unit: mm • Enhancement-mode • Low gate drive voltage: VGE = 2.5 V min (@IC = 130 A) • Peak collector current: IC = 130 A (max) • Compact and Thin (TSON-8) package

8G151

Abstract: GT8G151
Contextual Info: GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit: mm • Enhancement-mode VGE = 2.5 V min. (@IC = 150 A) • Peak collector current: IC = 150 A (max) TSON-8 8 0.2 0.65±0.05 Rating Unit VCES

ic MARKING QG

Abstract: 5G133
Contextual Info: GT5G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 Strobe Flash Applications Unit: mm • Enhancement-mode • Low gate drive voltage: VGE = 2.5 V min (@IC = 130 A) • Peak collector current: IC = 130 A (max) • Compact and Thin (TSON-8) package

8g136

Abstract: toshiba week code marking
Contextual Info: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Tc=70℃(max) Maximum Ratings (Ta = 25°C)

Contextual Info: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) Unit: mm (@VGE=3.0V(min),Ta=70℃(max)/ Absolute Maximum Ratings (Ta = 25°C)

10g131

Abstract: ic MARKING QG GT10G131 TOSHIBA IGBT DATA BOOK NOR GATE IC A3170
Contextual Info: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Unit: mm Strobe Flash Applications • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode

igbt transistor

Abstract: 8g133
Contextual Info: GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) • Peak collector current: IC = 150 A (max)

GT10G131

Abstract: 10G131
Contextual Info: GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode

GT8G136

Abstract: 8g136
Contextual Info: GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications • Compact and Thin TSSOP-8 package • Enhancement-mode • Peak collector current: IC = 150 A (max) Unit: mm (@VGE=3.0V(min),Ta=70℃(max)/ Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed. : tf = 0.30µs Max. Low saturation voltage. : VCE(sat) = 2.7V (Max.)

Contextual Info: GT10J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J311 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. Low saturation voltage : VCE (sat) = 2.7V (Max.)

GT30J322

Abstract: IGBT Guide TOSHIBA IGBT DATA BOOK
Contextual Info: GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 Unit: mm FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25µs Typ. (IC = 50A)

45f123

Abstract: GT45F123 transistor 45f123 GT45F12 GT45 TCA160 45F12 gt45f
Contextual Info: GT45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT45F123 For PDP-TV Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • Low input capacitance: Cies = 2700pF (typ.) • Peak collector current: ICP = 200 A (max)

8g133

Abstract: GT8G133 IGBT GT8G133
Contextual Info: GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) • Peak collector current: IC = 150 A (max)

8G133

Abstract: GT8G133 TOSHIBA IGBT DATA BOOK NOR GATE IC toshiba lead free mark
Contextual Info: GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications Unit: mm • Compact and Thin TSSOP-8 package • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) • Peak collector current: IC = 150 A (max)

Contextual Info: GT20J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J311 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. Low saturation voltage : VCE (sat) = 2.7V (Max.)

GT20J301

Abstract: toshiba code igbt
Contextual Info: GT20J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. Low saturation voltage : VCE (sat) = 2.7V (Max.)