Untitled
Abstract: No abstract text available
Text: DiT| SOTTESO GDltESl 3 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR 90D 16251 D 7 -3 3 - 3 5 TOSHIBA GTR MODULE MG75H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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MG75H6EL1
Ic-75A)
Icm75A)
MG75H6EL1-1
MG75H6EL1-4
MG150Q2YK1
MG200Q1UK1
MG75Q2YK1
MG50Q2YK1
10Sec.
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PC 181 OPTO
Abstract: MG50N2YS1 16175 MU51
Text: TD TOSHIBA {DISCRETE/OPTO]- D e J IìGci72S0 DDlbl74 0 | 9097250 TOSHIBA <DISCRETE/OPTO TOSHIBA 90D 16174 SEMICONDUCTOR D TOSHIBA GTR MODULE MG50N2YS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm
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ciGci72S0
DDlbl74
MG50N2YS1
EGA-MG50N2YS1-4
DT-33
MG50N2YS1
EGA-MG50N2YS1-
PC 181 OPTO
16175
MU51
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Untitled
Abstract: No abstract text available
Text: TOSHIBA { D I SC RE TE /OPT O} *TG 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR dFI^CHTESO GDlbiao Q 90D 16120 D T - 33-/3 TOSHIBA GTR MODULE MG25H1BS1 TECHNICAL DATA SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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MG25H1BS1
25H1BS1-4
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Untitled
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTO> TD 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA SEMICONDUCTOR » F | ciDci 7 S S D 90D : 16371 D O lt.371 D TOSHIBA GTR MODULE MG8D6EM1 TECHNICAL DATA 'SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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180gr
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Untitled
Abstract: No abstract text available
Text: TO TOSHIBA {DISCRETE/OPTO} DE I SOTTESO DOItiID ? | 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D T “3 3 - 3 S 90D 16110 SEM ICO N DU CTO R TOSHIBA GTR MODULE MG300Q1UK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE TENTATIVE HIGH POWER SWITCHING APPLICATIONS.
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MG300Q1UK1
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Toshiba transistor NPN Ic 50A
Abstract: toshiba diode 1A TOSHIBA D MG50N2CK1 50n2
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA TOSHIBA "ha DE I SOTTESO 001ti335 1 90D D I S C R E TE/OPTO SEMICONDUCTOR 16335 D7"-33j35' TOSHIBA GTR MODULE MG50N2CK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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001L33S
Dr-33-35"
MG50N2CK1
TJS1251C
EGM-HC50N2CK1-4
Toshiba transistor NPN Ic 50A
toshiba diode 1A
TOSHIBA D
MG50N2CK1
50n2
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MG50D2YM1
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPT0> TD 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR DE~| TGTT E S G □Dlb4Eti 1 90D D T -3 9 -5 7 16426 TOSHIBA GTR MODULE MG50D2YM1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. flOTOR CONTROL APPLICATIONS.
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MG50D2YM1
085ii
31/C2)
MG50D2YM1-4
MG50D2YM1-5
T1A20
MG50D2YM1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} TO DT-33'30" 90D 16242 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA DE I TDTTSSD O O l t ^ a 2 SEMICONDUCTOR TOSHIBA GTR MODULE MG75G6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.
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DT-33
MG75G6EL1
10-FAST-QN-TAB
Ic-75A)
MG75C6EL1-4
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DI SC RE TE /OPT O} * • dF 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR I t o ^tssd 90D 16129 auibiai D t 7"-33~/3 TOSHIBA GTR MODULE MG50H1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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MG50H1BS1
50HIBS1-A
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MG50G2DM1
Abstract: S443 1251C 251C
Text: TOSHIBA "Í0 -CDISCRETE/OPTQ} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR D ^ | 101725111 5 1 . 90D 16431 D7"-3f-ö?7 TOSHIBA GTR MODULE M G 5 0 G 2 DM 1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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QDlb431_
MG50G2DM1
2-108B1A
Ta-25Â
di/4t-150A/
MC50G2DM1-4'
D01b43S
MG50G2DM1
MG50G2DH1-5
S443
1251C
251C
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Untitled
Abstract: No abstract text available
Text: TO TOSHIBA {D ISCR ET E/OPTO} D E j IGTTaSG Q01bl54 7 | 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA 90D SEMICONDUCTOR 16124 T~3?-27 D TOSHIBA GTR MODULE M625H2YS1 TECHNICAL DATA SILICON N CHANNEL 1GBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.
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Q01bl54
M625H2YS1
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transistor 16933
Abstract: 16933 Transistor
Text: TOSHIBA {DISCRETE/OPTO} dF I tG ^ S O 99D 16932 9097250 TOSHIBA DISCRETE/OPTO Gült^E S ï~~ DT-?,9-l3 TOSHIBA FIELD EFFECT TRANSISTOR TOSHIBA SEMICONDUCTOR S 2 3 7 0 SILICON N CHANNEL MOS TYPE (7T-M0SI ) TECHNICAL DATA INDUSTRIAL APPLICATIONS _ Unit in aim
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030ii
100nA
300uA
transistor 16933
16933 Transistor
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MG10G6EL2
Abstract: No abstract text available
Text: "TG TOSHIBA {DISCRETE/OPT0> 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR DE I T t m s s o D D G lb n S a | ~ 90D 16195 D TOSHIBA GTR MODULE MG10G6EL2 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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MG10G6EL2
EGA-MG10G6EL2-1
EGA-MG10G6EL2-4
MG10G6EL2
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mg15n2
Abstract: No abstract text available
Text: TO TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D E | TDTTESO 001bDS4 1 DT"33-3 5 90D 16054 SEMICONDUCTOR TOSHIBA GTR MODULE M G 1 5 N 2 Y K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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001bDS4
MG15N2YK1
mg15n2
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Untitled
Abstract: No abstract text available
Text: TOSHIBA - C D I S C R E T E / O P T O J T D 9097250 TOSHIBA <DISCRETE/OPTO> TOSHIBA SEMICONDUCTOR DE | ^D^TaSO DGlb4Sl S 90D 16421 TOSHIBA GTR MODULE .MG50D2DM1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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MG50D2DM1
085il
MG50D2DM1-4
DT7a50
HG50D2DM1-5
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA TOSHIBA ~Tü DISCRETE/OPTO Ì> F| ^0^7550 DDlblOti 5 90D 16106 SEMICONDUCTOR DT - 2 3 - 3 S ' TOSHIBA GTR MODULE M G 3 0 0 M 1 U K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.
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GT25H101
Abstract: GT25H Opto Speed SA
Text: TOSHIBA {DIS CR ETE/O PT O! 90D 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D E_| ciO,:17BSD D D l b l ñ ? TD SEMICONDUCTOR 16187 1 D T - 3 3 ' ^ 3 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT25H101 TECHNICAL DATA SILICON N-CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS.
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15BKAX
GT25H101-3
GT25H101
GT25H
Opto Speed SA
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO}- TT 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA dF | t O T 75SG GDlbTSS T TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 99D 1 6 7 5 5 2 S IC 7 9 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-M0SI) T “ 3 <? “ I• •INDUSTRIAL APPLICATIONS
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300uA
EGA-2SK790-A
EGA-2SK790-5
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SS1001
Abstract: transistor bc 570 GS3A 2sk7884 5a2 DIODE
Text: TOSHIBA {DISCRETE/OPTO} n De I ^ D T T S S O 99D 1674 5 9097250 TOSHIBA <DISCRETE/OPTO DDlb 7 4 S b DT-^-IS TOSHIBA FIELD EFFECT TRANSISTOR TOSHIBA SEMICONDUCTOR 2 S K 7 8 8 SILICON N CHANNEL HOS TYPE 7T-MOSI ) TECHNICAL DATA INDUSTRIAL APPLICATIONS _ Unit in mm
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100nA
300nA
JL59MAX.
ID-15A
EGA-2SK788-4
EGA-2SK788-5
SS1001
transistor bc 570
GS3A
2sk7884
5a2 DIODE
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MG15N1BS1
Abstract: No abstract text available
Text: Toshiba -c d i s c r e t e / o p t o j 9097250 TOSHIBA TOSHIBA to DISCRETE/OPTO de | c]m7aso Goitisa i 90D 16152 SEMICONDUCTOR D T-33-/3 TOSHIBA GTR MODULE MG 1 5N1BS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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T-33-/3
MG15N1BS1-4
MG15N1BS1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {D IS CRETE /OPT O} ^ 99D 16954 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA =10^7550 G G l t ‘ìS4 4 SEMICONDUCTOR DT-43-3S TOSHIBA GTR MODULE MG 1 0 G 6 E M 1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.
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DT-43-3S
10-FA8T-0H-TAB
EGA-MG10G6EM1-4
EGA-MG10G6EM1-5
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2108A
Abstract: S3051 741E MG50G2YM1 A90D
Text: TOSHIBA {DIS CR ET E/OPT O} I 9097250 TOSHIBA <DI SCRETE/OPTO> TOSHIBA DE I TGTTSSG □□lb43b 4 f ~ _ 90D 16436 DT-3^-bn TO SEMICONDUCTOR TOSHIBA GTR MODULE M G 5 0 G 2 Y M 1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. 11DT0R CONTROL APPLICATIONS.
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11DT0R
lb43b
MG50G2YM1
MG50G2YM1-4
MG50G2VM1
MG50G2YM1-5
2108A
S3051
741E
A90D
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transistor 16305
Abstract: No abstract text available
Text: TOSHIBA OISCRETE/OPTO} 90D 16302 9097250 TOSHIBA DISCRETE/OPTO ¿Tostulic SEMICONDUCTOR D T-3J-3S MG15N2CK1 TECHNICAL DATA MG15N6EK1 W o cs ös m H o 2: 00 o f vf £\ > W vO 2 m cs a TOSHIBA CORPORATION OT I A 2 A - 309 - 2 - > L » î "TO TOSHIBA {DISCRETE/OPTO}
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MG15N2CK1
MG15N6EK1
MG15N2CK1
Ta-25cC)
T0T7550
0Dlti30b
DT-33-35
transistor 16305
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA TOSHIBA TO DE § ÌCH7E5D DDltD7M 7 f~ <D I S C R E T E / O P T O 90D SEMICONDUCTOR 16074 U T - 3 3 -35' TOSHIBA GTR MODULE M G 7 5 M 2 Y K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.
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