TPCA 8005
Abstract: TOSHIBA 8005 transistor data transistor tpca 8005-h tpca-8005 TPCA8005-H
Text: TPCA8005-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High speed U-MOSIII TPCA8005-H TENTATIVE High Speed and High Efficiency DC-DC Converters Unit: mm Notebook PC Applications Portable Equipment Applications High speed switching •
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TPCA8005-H
TPCA 8005
TOSHIBA 8005 transistor data
transistor tpca 8005-h
tpca-8005
TPCA8005-H
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Untitled
Abstract: No abstract text available
Text: TPCA8004-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High Speed U-MOSIII TPCA8004-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Unit: mm Portable Equipment Applications 0.4±0.1 1.27 0.5±0.1 High speed switching
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TPCA8004-H
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TPCA8003-H
Abstract: No abstract text available
Text: TPCA8003-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High speed U-MOSIII TPCA8003-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications High speed switching • Small gate charge: Qg = 25 nC (typ.)
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TPCA8003-H
TPCA8003-H
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BR 8014
Abstract: TPCA8014-H diode marking code YF
Text: TPCA8014-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High speed U-MOSIII TENTATIVE TPCA8014-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications High speed switching Small gate charge: Qsw = 7.4 nC (typ.)
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TPCA8014-H
BR 8014
TPCA8014-H
diode marking code YF
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100Note
Abstract: No abstract text available
Text: TPCA8005-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High Speed U-MOSIII TPCA8005-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Unit: mm Portable Equipment Applications 0.4±0.1 1.27 0.5±0.1 High speed switching
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TPCA8005-H
100Note
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TPCM8001-H
Abstract: No abstract text available
Text: TENTATIVE + TPCM8001-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High speed U-MOSIII TPCM8001-H High Speed and High Efficiency DC-DC Converters Unit: mm 0.5 Notebook PC Applications Portable Equipment Applications 0.8 5 • High speed switching
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TPCM8001-H
TPCM8001-H
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Untitled
Abstract: No abstract text available
Text: TPCA8003-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High Speed U-MOSIII TPCA8003-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Unit: mm 0.5±0.1 Portable Equipment Applications 0.05 M A 5 • High speed switching
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TPCA8003-H
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8014h
Abstract: TPCA8014-H 8014-H
Text: TPCA8014-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8014-H High-Speed and High-Efficiency DC-DC Converters Notebook PC Applications Unit: mm 0.5±0.1 Portable Equipment Applications 0.05 M A 5 • High-speed switching
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TPCA8014-H
8014h
TPCA8014-H
8014-H
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TPCA8003-H
Abstract: No abstract text available
Text: TPCA8003-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High speed U-MOSIII TPCA8003-H High Speed and High Efficiency DC-DC Converters Unit: mm Notebook PC Applications Portable Equipment Applications High speed switching • Small gate charge: Qg = 25 nC (typ.)
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TPCA8003-H
TPCA8003-H
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TPCA8011-H
Abstract: 8011h
Text: TPCA8011-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra High speed U-MOSIII TPCA8011-H High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications • High speed switching • Small gate charge: Qsw = 11 nC (typ.)
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TPCA8011-H
TPCA8011-H
8011h
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8016-H
Abstract: TPCA8016-H TPCA8016-H - Toshiba Semiconductor - High-Speed and High-Efficiency DC-DC Converters Notebook PC TPCA 8016
Text: TPCA8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8016-H High-Speed and High-Efficiency DC-DC Converters Notebook PC Applications Unit: mm 0.5±0.1 Portable Equipment Applications 0.05 M A 5 • High-speed switching
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TPCA8016-H
8016-H
TPCA8016-H
TPCA8016-H - Toshiba Semiconductor - High-Speed and High-Efficiency DC-DC Converters Notebook PC
TPCA 8016
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Untitled
Abstract: No abstract text available
Text: TPCA8014-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8014-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm 0.5±0.1 Portable Equipment Applications • High-speed switching
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TPCA8014-H
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1N4607
Abstract: SC-40 TOSHIBA 1N4607
Text: TOSHIBA {DISCRET E/ OPT O} b? 9097250 TOSHIBA DISCRETE/OPTO 1N4607 - DDDTSTS □ "J , D rr.o'lS-*? 67C 09295 Silicon Epitaxial.-Planar Type Diode TENTATIVE Unit in nun COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.
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1N4607
SC-40
100mA
250mA
350ma
400mA
500mA,
1N4607
SC-40
TOSHIBA 1N4607
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1SS272
Abstract: No abstract text available
Text: TOSHIBA 1SS272 1 SS272 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. + 0.2 = 25°C CHARACTERISTIC Maximum Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms)
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1SS272
SC-61
961001EAA2'
1SS272
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TOSHIBA 1N DIODE
Abstract: No abstract text available
Text: TOSHIBA 1SS200 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS2Q0 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. Low Forward Voltage : Vp 3 = 0.92V (Typ.) Fast Reverse Recovery Time : trr = 1.6ns (Typ.) Small Total Capacitance : C^ =2 .2pF' (Typ.)
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1SS200
55MAX
961001EAA2'
TOSHIBA 1N DIODE
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Untitled
Abstract: No abstract text available
Text: TOSHIBA l - b? {DISCRETE/OPTO} dFI^CHTESO 9Q97250 TOSHIBA DISCRETE/OPTO - ; - - 0QCH2ÖL, 1 |~ 67C 09266 -Silicon Epitaxial Planar Type _ Diode D7*03 »0^ 1 N91 6,1 N91 6A, 1N916B TENTATIVE Unit In nun COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.
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9Q97250
1N916B
1N916
1N916A
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1SS362
Abstract: No abstract text available
Text: TOSHIBA 1SS362 1 SS362 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Small Package Low Forward Voltage : Vjn = 0.97V Typ. Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance
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1SS362
961001EAA2'
1SS362
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1s1588
Abstract: Diode 1S1588 1S1587 1S1536 1s85
Text: TOSHIBA -CDISCRETE/0PT03- 9097250 TOSHIBA ~ b7 Dlf| ^ 7 2 5 0 DISCRETE/OPTO _ 67C_09299_. 1S1585—1S1588 Silicon Epitaxial' Planar Type Diode ULTRA HIGH SPEED SWITCHING APPLICATIONS. FEATURES: Low Forward Voltage : Vf =1.0V (Max.) . Small Total Capacitance : Cx=2pF (Max.)
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-CDISCRETE/0PT03-
1S1585--1S1588
1S1585
1S1536
1S1587
1S1588
Diode 1S1588
1s85
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1SS190
Abstract: No abstract text available
Text: TOSHIBA 1SS190 TOSHIBA DIODE 1 SILICON EPITAXIAL PLANAR TYPE S S 1 9 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time SYMBOL VF(1)
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1SS190
100mA
961001EAA2
961001EAA2'
1SS190
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094g
Abstract: toshiba ssd TRR50NS TOSHIBA DIODE GLASS S3155 TOSHIBA ULTRA HIGH SPEED SWITCHING APPLICATIONS TOSHIBA "ULTRA HIGH SPEED" DIODE
Text: TOSHIBA -CDISCRETE/0PT03- 9097250 TOSHIBA b? DËfJlDlTaSQ 0 0 0 ^ 2 fl DISCRETE/OPTO 67C 0 9392 Silicon Epitaxial Planar Type ' D T '0 3 ’0 $ S3155 Diode TENTATIVE Unit in mm COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.
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S3155
100mA
094g
toshiba ssd
TRR50NS
TOSHIBA DIODE GLASS
S3155
TOSHIBA ULTRA HIGH SPEED SWITCHING APPLICATIONS
TOSHIBA "ULTRA HIGH SPEED" DIODE
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Untitled
Abstract: No abstract text available
Text: 1SS382 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS382 ULTRA HIGH SPEED SWITCHING APPLICATION • • • • Small Package Composed of 2 independentdiodes. Low Forward Voitage : Vy 3 = 0.9 2V (TYP.) Fast Reverse Recovery Time ; trr = 1.6ns (TYP,)
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1SS382
961001EAA2'
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1SS368
Abstract: No abstract text available
Text: TOSHIBA 1SS368 1 SS368 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION Vp 3 = 0.98V (TYP.) trr= 1.6ns (TYP.) CT = 0.5pF (TYP.) 0.8 ±0.1 io 1 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Forward Voltage
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1SS368
961001EAA2'
1SS368
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN1D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HNinniF ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm + • Small Package • Low Forward Voltage • Fast Reverse RecoveryTime : • Small Total Capacitance 2 .8 + : Vp 3 = 0.92V (Typ.) 1. 6
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HN1D01F
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1SS360F
Abstract: No abstract text available
Text: 1SS360F TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS360F Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS 1.6 ± 0.1 0.85 ±0.1 Small Package : 1608 Fiat Lead Excellent in Forward Current and Forward Voltage Characteristics VF 3 —0.92 V (Typ.)
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1SS360F
1SS360F
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