TOROID FT10 Search Results

TB239

Contextual Info: Decem mber 19, 20144 T TB239 Featuriing the LY Y942 Frequen ncy=2-30M MHz Pout=400W Gaain=20dB Vd ds=50Vdc Id dq=1.0A Efficciency=66% % PH: 8805 484-4210 FAX:(805)48 84-3393 1110 Avenida Acasso, Camarillo CA C 93012 ww ww.polyfet.com m December 19, 2014 50

transistor Electronic ballast "INDUCTION LAMP"

Abstract: schematic diagram Electronic Ballast HID Motorola, AN1049 MC14046 AN1049 EB407 5000 watts PURE SINE WAVE inverter schematic diagram induction lamp electronic ballast for fluorescent lighting t8 motorola BR480/D
Contextual Info: MOTOROLA Order this document by AN1543/D SEMICONDUCTOR APPLICATION NOTE AN1543 Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse ABSTRACT With a continuous growth rate of 20% per year, electronic

transistor Electronic ballast "INDUCTION LAMP"

Abstract: schematic diagram Electronic Ballast HID AN1049 magnetic amplifier saturable core electronic ballast for fluorescent lighting t8 dimmable Fluorescent BALLAST an1543 Saturable Core Square Wave Oscillator induction lamp ballast schematic hid lamp ballast
Contextual Info: AN1543/D Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse http://onsemi.com APPLICATION NOTE ABSTRACT c. Assure that the circuit will remain stable, even under fault conditions.

schematic diagram of energy saving lamps 25 watts

Abstract: Motorola, AN1049 ELECTRONIC BALLAST 150 W HID DIAGRAM Motorola Bipolar Power Transistor Data schematic diagram Electronic Ballast HID Motorola, eb407 Basic Halogen Converter EB407 Basic Halogen Converter FT1603A transistor bc557 eb407
Contextual Info: MOTOROLA Order this document by AN1543/D SEMICONDUCTOR APPLICATION NOTE AN1543 Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse ABSTRACT With a continuous growth rate of 20% per year, electronic

transistor Electronic ballast "INDUCTION LAMP"

Abstract: schematic diagram Electronic Ballast HID MC14046 vogt m4 MJE18605D2 schematic diagram of energy saving lamps 25 watts vogt toroid siemens 230 gas discharge tube induction lamp ballast an1543
Contextual Info: AN1543/D Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade http://onsemi.com APPLICATION NOTE ABSTRACT With a continuous growth rate of 20% per year, electronic lamp ballasts are widely spread over the world. Even though the light out of a fluorescent tube has a discontinuous

toroid FT10

Abstract: BUL45F 221A-06 221D BUL45 MJE18006 MJF18006 1000 watt hf transistor 12 volt 150 watt hf transistor 12 volt
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU L45* BUL45F* Designer’s Data Sheet NPN Silicon Power Transistor 'M otorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS High Voltage SWITCHMODE™ Series Designed for use in electronic ballast light ballast and in Switchmode Power

1N5761

Contextual Info: ON Semiconductor BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

toroid FT10

Abstract: toroid core
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45* BUL45F* D esigner’s Data Sheet •Motorola Profwnd Devi«» NPN S ilico n P o w er TVansistor POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS High Voltage SWITCHMODE™ Series Designed for use in electronic ballast light ballast and In Switchmode Power

bul45g

Contextual Info: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast light ballast and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)

1N5761

Abstract: npn BUL45G bul45a
Contextual Info: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast light ballast and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)

toroid FT10

Abstract: 1N5761 diode 1n400 MTP12N10 MTP8P10 MUR105 MUR150 1N4007 BUL45 MJE210
Contextual Info: ON Semiconductor BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

1N5761

Abstract: si 1N4007 transistor toroid FT10 1N4007 BUL45 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: ON Semiconductort BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Main features include: POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

1N5761

Abstract: toroid FT10 BUL45G BUL45 marking code t1a MUR150 MJE210 MPF930 MTP12N10 MTP8P10
Contextual Info: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)

1N5761

Abstract: marking code t1a BUL45 BUL45G MJE210 MPF930 MTP12N10 MTP8P10 MUR105 MUR150
Contextual Info: BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Features • Improved Efficiency Due to: ♦ Low Base Drive Requirements (High and Flat DC Current Gain hFE)

1N5761

Abstract: RM10-CORE pl lamp ballast MJF18006 221D BUL45 BUL45F MJE18006 MPF930 MTP8P10
Contextual Info: MOTOROLA Order this document by BUL45/D SEMICONDUCTOR TECHNICAL DATA Designer's BUL45 * BUL45F*  Data Sheet NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power

Contextual Info: MOTOROLA O rder this docum ent by BUL45/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L 45* BUL45F* NPN Silicon Power Transistor ‘ Motorola Preferred Device High Voltage SWITCHMODE™ Series POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

MJF1800

Abstract: MJE1800
Contextual Info: ON Semiconductort BUL45 * BUL45F * NPN Silicon Power Transistor High Voltage SWITCHMODEt Series *ON Semiconductor Preferred Device Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Main features include:

toroid FT10

Abstract: MTP8P10 MUR105 MJE18006 MJF18006 MPF930 221D BUL45 BUL45F L 0629
Contextual Info: MOTOROLA Order this document by BUL45/D SEMICONDUCTOR TECHNICAL DATA BUL45 * BUL45F*  Data Sheet Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power

078-0156-01G

Abstract: Echelon FTT-10A ftt-10a ftt-10a 50051 echelon LPR-10 hardware connections echelon ftt-10a 50051 Belden STP L0528 FTT-10 echelon FTT10A
Contextual Info: LONWORKS  FTT-10A Free Topology Transceiver User’s Guide Version 6 @ ECHELON Corporation 078-0156-01G Echelon, LON, LONWORKS, LonBuilder, NodeBuilder, LonManager, LonTalk, LONMARK, LonPoint, Neuron, 3120, 3150, the LONMARK logo, and the Echelon logo are trademarks of Echelon registered in the United States and other

he804

Abstract: ati connector HE809 smd diode ED MMSD32032602S-C-xx Microspire MB he807 eurofarad TCN30 MMEE08510804S-C-xx mmfl16016604s-c mmfl16016604s-d
Contextual Info: Edition 1.2. Space- & Military Level Components 2008/08 2 Introduction and Table of Contents If you are working on a program for military, industrial and/or space equipments & need product with extended temperature performance, MSA Components can help. To support the customer needs

LPT-11 Link Power Twisted Pair Transceiver

Abstract: 078-0198-01A Echelon FTT-10A lpt oscilloscope PLT09H-2003R Belden STP Neuron Chip 3150 FT 3120 and FT 3150 Smart Transceiver Belden STP 85102 ftt-10a
Contextual Info: LONWORKS LPT-11 Link Power Transceiver User’s Guide Version 1 @ ECHELON ® Corporation 078-0198-01A Echelon, LON, LONWORKS, LonBuilder, NodeBuilder, LonTalk, LNS, LONMARK, LonPoint, Neuron, 3120, 3150, and the Echelon logo are trademarks of Echelon Corporation registered in the United States and

transistor bd4202

Abstract: motorola AN485 transistor tip120 motorola MJ480 MJE802 MOTOROLA TRANSISTOR REPLACEMENT GUIDE 2SC495 transistor MJE1100 MOTOROLA BUX98A MJE170 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45 * BUL45F*  Data Sheet Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power

Pyxos FT Chip Data Book

Abstract: 005-0188-01A ac ripple neutralizer ac ripple neutralizer circuit diagram HP8656B service manual AVR microprocessor EN14908 S1ZB60-7062 TMS80040CS LHL08TB
Contextual Info: @ECHELON Pyxos FT Chip Data Book @ 005-0188-01A ® Echelon, LONWORKS, LONMARK, LonTalk, Neuron, 3120, 3150, LNS, ShortStack, LonMaker, and the Echelon logo are trademarks of Echelon Corporation registered in the United States and other countries. Pyxos is a trademark of Echelon

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir