Untitled
Abstract: No abstract text available
Text: PACKAGE TOP VIEW EXAMPLE PCB LAND PATTERN 3 ±0.05 3.30 2.26 0.30 3 ±0.05 1.80 x16 1.80 Pin 1 Marking 0.52 0.50 PACKAGE SIDE VIEW x16 3.26 0.50 0.20 0.26 0.25 REF PACKAGE BOTTOM VIEW 0.20 x16 0.25 REF 1.80 ±0.10 Thermal Pad 1.80 ±0.10 0.25 ±0.05 0.50 Seating
|
Original
|
PDF
|
AB08XX
AB08XX
|
100n m 275v
Abstract: No abstract text available
Text: BCcomponents DATA SHEET MKP 336 1 X1 Interference suppression film capacitors Product specification Supersedes data of April 1999 File under BCcomponents, BC05 2001 Jun 22 BCcomponents Product specification Interference suppression film capacitors MKP 336 1
|
Original
|
PDF
|
296x12
CBA207
100n m 275v
|
TB200HB02
Abstract: No abstract text available
Text: Top & Bottom Marking Strips Double Row Terminal Blocks Top Marker Strips Top mounting marker strips are available in white opaque plastic. Two cover clips are supplied with each marker strip. All top marker strips must be ordered separately. Consult factory for special legends.
|
Original
|
PDF
|
TB200,
X20312.
TB200HB,
X23312HB.
TB100
TB200
TB200HB*
TB200HB02
|
TB200HB
Abstract: THK rail TB100 TB300 TB200 TB345
Text: MAGNUM Single & Double Row Filtered Connectors Top & Bottom Marking Strips Double Row Terminal Blocks TB100, TB200, TB300, TB345 SERIES TOP MARKER STRIPS Top mounting marker strips are available in white (opaque) plastic. Two cover clips are supplied with each marker
|
Original
|
PDF
|
TB100,
TB200,
TB300,
TB345
X20312.
TB200HB,
X23312HB.
TB100
TB300
TB200HB
THK rail
TB100
TB300
TB200
|
X22206601
Abstract: 23-P10-Si SB-S11-P1-01-1-1A 63-P10-SI DIN 46244 CONNECTOR X8340-SZ4 din 46244-A6.3-0.8 19BGT-2-2210 46247 6.3 x 0.8 DIN+46244+CONNECTOR
Text: Power distribution systems - accessories Connections and terminals Line terminal X 221 503 01 suitable for Line terminal max. 63 A X 221 503 01 max. tightening torque 3.0 Nm Power-D-Box with sockets pre-wired 14 .551 50 1.97 30 1.18 busbar X1, X2 blade terminals 6.3 mm
|
Original
|
PDF
|
19BGT-2-X8340-S02
19BGT-2-X8340-SZ4
X8340-S02
X8340-SZ4
ESS20
/ESX10
ESS20
ESX10
19BGT-2-ESS20
19BGT-2-ESX10
X22206601
23-P10-Si
SB-S11-P1-01-1-1A
63-P10-SI
DIN 46244 CONNECTOR
X8340-SZ4
din 46244-A6.3-0.8
19BGT-2-2210
46247 6.3 x 0.8
DIN+46244+CONNECTOR
|
512MB NOR FLASH
Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
Text: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on Bus 2
|
Original
|
PDF
|
S72WS-N
16-bit
512MB NOR FLASH
BTA160
BGA 130 MCP NAND DDR
S72WS512NFFKFWZ2
Flash MCp nand DRAM 137-ball
ball 128 mcp
NAND FLASH BGA
S29WS256N
S72WS256ND0
S72WS256NDE
|
Untitled
Abstract: No abstract text available
Text: DMP58D0LFB P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C -50V 8Ω @ VGS = -5V X1-DFN1006-3 -310A • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
|
Original
|
PDF
|
DMP58D0LFB
AEC-Q101
X1-DFN1006-3
-310A
X1-DFN1006-3
DS35206
|
TB200HB
Abstract: TB100 TB-3000 QC19 QC208 TB200HB02 TB300-08 203HB jumpers TB200
Text: MAGNUM Base & Rail Mount Connectors Euro-MAG Series PCB – Spring Clamp Single & Double Row Filtered Connectors Series TB100 Double Row Terminal Blocks SPECIFICATIONS Rating: 30A, 300V* Center Spacing: .375” or 3/8” 9.52 mm Wire Range: #14 - 22 AWG CU
|
Original
|
PDF
|
TB100
TB100-08
TB100-04SP
TB200HB
TB100
TB-3000
QC19
QC208
TB200HB02
TB300-08
203HB
jumpers
TB200
|
SOT23 marking sk
Abstract: 11X16 marking SK SOT23 CAT93C66LI-G
Text: CAT93C66, CAT93W66 4 kb Microwire Serial CMOS EEPROM Description The CAT93C66 is a 4 kb CMOS Serial EEPROM device which is organized as either 256 registers of 16 bits ORG pin at VCC or 512 registers of 8 bits (ORG pin at GND). The CAT93W66 features x16
|
Original
|
PDF
|
CAT93C66,
CAT93W66
CAT93C66
751BD
517AZ
511AK
CAT93C66/D
SOT23 marking sk
11X16
marking SK SOT23
CAT93C66LI-G
|
Untitled
Abstract: No abstract text available
Text: CAT93C66, CAT93W66 4 kb Microwire Serial CMOS EEPROM Description The CAT93C66 is a 4 kb CMOS Serial EEPROM device which is organized as either 256 registers of 16 bits ORG pin at VCC or 512 registers of 8 bits (ORG pin at GND). The CAT93W66 features x16
|
Original
|
PDF
|
CAT93C66,
CAT93W66
CAT93C66
CAT93W66
751BD
CAT93C66/D
|
Untitled
Abstract: No abstract text available
Text: Connectors Section Contents Page Feed through blocks DS series . . . . . . . . . . . . . . . . . . 334 Feed through blocks (DP series) . . . . . . . . . . . . . . 335-336 Mini feed through blocks (DM series) . . . . . . . . . . . . . . 337 Double level blocks (DDP series). . . . . . . . . . . . . . . . . . 338
|
Original
|
PDF
|
53TYP
70TYP
16TYP
C7024
|
SI8606
Abstract: Si86 SOIC127P1032X265-16AN
Text: Si860x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features Independent, bidirectional SDA and SCL isolation channels Open drain outputs with 35 mA sink current High electromagnetic immunity Wide operating supply voltage
|
Original
|
PDF
|
Si860x
AEC-Q100
Si8605,
Si8606)
SOIC-16
60-year
SI8606
Si86
SOIC127P1032X265-16AN
|
SOIC127P1032X265-16AN
Abstract: No abstract text available
Text: Si860x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features Independent, bidirectional SDA and SCL isolation channels Open drain outputs with 35 mA sink current High electromagnetic immunity Wide operating supply voltage
|
Original
|
PDF
|
Si860x
AEC-Q100
Si8605,
Si8606)
SOIC-16
60-year
SOIC127P1032X265-16AN
|
SOIC127P1032X265-16AN
Abstract: soic16 land pattern SI8606 RF transmitter SOIC 8 narrow body pcb pattern narrow body SOIC 8 pcb pattern
Text: Si860x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features Independent, bidirectional SDA and SCL isolation channels Open drain outputs with 35 mA sink current High electromagnetic immunity Wide operating supply voltage
|
Original
|
PDF
|
Si860x
AEC-Q100
Si8605,
Si8606)
SOIC-16
60-year
SOIC127P1032X265-16AN
soic16 land pattern
SI8606
RF transmitter
SOIC 8 narrow body pcb pattern
narrow body SOIC 8 pcb pattern
|
|
Untitled
Abstract: No abstract text available
Text: DMP58D0LFB P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C -50V 8Ω @ VGS = -5V X1-DFN1006-3 -310A • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
|
Original
|
PDF
|
DMP58D0LFB
X1-DFN1006-3
-310A
AEC-Q101
DS35206
|
S2-0703
Abstract: EN60947-5-1 IEC60529 IEC60947-5-1 IEC60947-5-5 HW9ZKG1 XW marking
Text: X Series E-Stops XW Series 22mm XW E-Stops Key features: X Series E-Stops CCC No. 2005010305150897 Door Interlock Switches UL File #E68961 Overview • The depth behind the panel is only 48.7 mm for 1 to 4 contacts with terminal cover for illuminated and non-illuminated units.
|
Original
|
PDF
|
E68961
IEC60947-5-5,
IEC60529)
S2-0703
EN60947-5-1
IEC60529
IEC60947-5-1
IEC60947-5-5
HW9ZKG1
XW marking
|
SI8601
Abstract: SI8606 si8600 Si86 i2c isolator SI8600AD-B-IS soic16 land pattern SI8605AC-B-IS1 AEC-Q100 SOIC-16
Text: Si860x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features Independent, bidirectional SDA and SCL isolation channels Open drain outputs with 35 mA sink current High electromagnetic immunity Wide operating supply voltage
|
Original
|
PDF
|
Si860x
AEC-Q100
Si8605,
Si8606)
SOIC-16
60-year
SI8601
SI8606
si8600
Si86
i2c isolator
SI8600AD-B-IS
soic16 land pattern
SI8605AC-B-IS1
|
Untitled
Abstract: No abstract text available
Text: Si8650/51/52/55 L O W P O W E R F I V E - C HANNEL D IGITAL I SOLATOR Features High-speed operation DC to 150 Mbps No start-up initialization required Wide Operating Supply Voltage 2.5–5.5 V Up to 5000 VRMS isolation
|
Original
|
PDF
|
Si8650/51/52/55
60-year
|
digital galvanic isolator
Abstract: si8402 bsda SI8400AB-B-IS
Text: Si840x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features Independent, bidirectional SDA and SCL isolation channels Open drain outputs with 35 mA sink current 60-year life at rated working voltage High electromagnetic immunity
|
Original
|
PDF
|
Si840x
Si8405)
SOIC-16
60-year
digital galvanic isolator
si8402
bsda
SI8400AB-B-IS
|
Untitled
Abstract: No abstract text available
Text: Si8650/51/52/55 L O W P O W E R F I V E - C HANNEL D IGITAL I SOLATOR Features High-speed operation DC to 150 Mbps No start-up initialization required Wide Operating Supply Voltage 2.5–5.5 V Up to 5000 VRMS isolation
|
Original
|
PDF
|
Si8650/51/52/55
60-year
|
PILKOR PCX2 337 MKP
Abstract: PILKOR WK PCX2 337 MKP 470n 275v MKP PILKOR PCX2 337 PCX2 337 470n m 275v x2 mkp 470n X2 XcxxX PCX2 337 MKP pilkor
Text: Pilkor components Interference Suppression film capacitors PCX2 337 MKP RADIAL POTTED CAPACITORS Pitch 10.0/15.0/22.5/27.5 mm QUICK REFERENCE DATA Capacitance range E6 series * 0.01㎌ to 3.3㎌ Capacitance tolerance ±1 0 %, ±20 % Rated (AC) voltage 50 to 60 Hz
|
Original
|
PDF
|
250Vac
275Vac
UL1414,
CSA-C22
UL1283,
WK0101)
PILKOR PCX2 337 MKP
PILKOR WK
PCX2 337 MKP
470n 275v MKP
PILKOR PCX2 337
PCX2 337
470n m 275v x2
mkp 470n X2
XcxxX
PCX2 337 MKP pilkor
|
Untitled
Abstract: No abstract text available
Text: November 1992 Edition 1.0 FUJITSU DATA SHEET M B 8 1 1 7 1 0 1 -60/-70/-80 CMOS 16M x 1 BIT NIBBLE MODE DYNAMIC RAM CMOS 16,777,216 x 1 BIT Nibble Mode Dynamic RAM The Fujitsu MB8117101 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 16,777,216 memory cells in a x1 configuration. The MB8117101 features a "nibble” mode of
|
OCR Scan
|
PDF
|
MB8117101
096-bits
KV0008-92YK1
|
ag marking
Abstract: No abstract text available
Text: September 1993 Edition 3.1 FUJITSU DATA SHEET MB8116101-60/-70/-80 CMOS 16M x 1 BIT NIBBLE MODE DYNAMIC RAM CMOS 16,777,216 x 1 BIT Nibble Mode Dynamic RAM The Fujitsu MB8116101 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 16,777,216 memory cells in a x1 configuration. The MB8116101 features a ’’nibble” mode of
|
OCR Scan
|
PDF
|
MB8116101-60/-70/-80
MB8116101
096-bits
JV0088-939J3
ag marking
|
Untitled
Abstract: No abstract text available
Text: Sept FUJITSU Edition zditk 4.1 DATA SHEET MB8116WO-60/-70/-80 CMOS 16Mx 1 BIT FAST PAGE MODE DYNAMIC RA CMOS 16,777,216 x 1 Bit Fast Page Mode Dynamic RAM ' t The Fujitsu MB8116100 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 16,777,216 memory cells in a x1 configuration. The MB8116100 features a ’ fast page" mode of
|
OCR Scan
|
PDF
|
MB8116WO-60/-70/-80
MB8116100
096-bits
MB8116100
0004DÃ
MB8116100-60
MB8116100-70
MB8116100-80
|