TOP 247 YN Search Results

Contextual Info: Hhtegiated D ev ize T ech n ology, l i e . FAST CMOS 18-BIT UNI VERSAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS IDT74FCT16601AT/CT/ET IDT74FCT162601 AT/CT/ET FEATURES: DESCRIPTION: • Common features: The FC T 16601T and FC T162601T 18-bit registered trans­

WIRING DIAGRAM OF VOLTMETER WITH PT

Abstract: rtd pt100 transmitter circuit using opamp transistors BC 459 cfs 455 f RTD with linearity, hysteresis, price RTV 501 cfs 455 j PT-100 385 4wire din 43760 PT-100 rtd
Contextual Info: 501 £ TWO-WIRE RTD TRANSMITTER Operator’s Manual MADE IN THE U.S.A. N E W P O R T Electronics, Inc. http://www.newportUS.com/manuals Additional products from S^IMEWPORT Electronics, Inc Counters Rate Meters Frequency Meters Timers PID Controllers Totalizers

si9928

Abstract: 13S8
Contextual Info: T e m ic siiiconix_ SÌ9928DY Dual Enhancement-Mode MOSFETs N- and P-Channel Product Summary V Ds ( V ) N -C hannel 20 P-Channel -2 0 r DS(on) (Q ) I d (A) 0.05 (a) VGs = 4.5 V ± 5 .0 0.06 C«’ V GS = 3.0 V ± 4 .2 0.08 <S) V q s = 2.7 V

Contextual Info: ARF446G ARF447G POWER PRODUCTS GROUP G Donotes RoHS Compliant, Pb Free Terminal Finish C om m on Source RF POWER MOSFETs N -C H A N N E L ENHANCEMENT MODE 250V 140W 65MHz T he A R F 446 and AR F447 com prise a s y m m e tric pair of com m on source RF pow er transistors designed fo r push-pull

ARF446G

Abstract: ARF447 ARF446 ARF447G VK200-4B arco 465
Contextual Info: ARF446G ARF447G POWER PRODUCTS GROUP G Donotes RoHS Compliant, Pb Free Terminal Finish C om m on Source RF POWER MOSFETs N -C H A N N E L ENHANCEMENT MODE 250V 140W 65MHz T he A R F 446 and AR F447 com prise a s y m m e tric pair of com m on source RF pow er transistors designed fo r push-pull

ECG1361

Abstract: Philips electrolytic 132 cm3x
Contextual Info: PHILIPS E C G INC bt.S3T2ô 00DS24D 7 17E D ECG ECG 1361 12 W Bridge BTL A F Power Am p Se m ico n d u cto rs Features • Power output: 12 W (typ) « Low number of external components: 1 electrolytic capacitor, 2 polyester film capacitors • Built-in muting circuit

Contextual Info: CY54/74FCT257T QUAD 2-INPUT MULTIPLEXERS CYPRESS FEATURES • Power-off disable feature ■ Function, Pinout and Drive Compatible with the FCT and F Logic ■ Matched Rise and Fall times ■ FCT-C speed at 4.3ns max. Com'i FCT-A speed at 5.0ns max. (Com'l)

pj 0266 iv

Abstract: pd22100 T46C
Contextual Info: M O S jfefltlU fê M O S Integrated Circuit / ¿P D 2 2 1 0 0 4 X 4 C R O S S P O I N T S W IT C H W IT H C O N T R O L M E M O R Y c M o s ^PD22100ü 4 to 16 lin e V r = > - y t 16 bit ÿ -y f- h 4 X 4 ? t lt z T i- n ? 'X j -y f-T'tfc ê ^ 3: 161 fiOT f -d ^ X 4 -y& ¿0 |*J 11® ü ✓<-f -f ij A * £0T =? - ^ T 'ü l i f t , S T R O B E A * , D A TA IN A ^ J lz £ ^

Contextual Info: M O S E L V t T E L IC V53C100N HIGH PERFORMANCE, 3.3 VO LT 1M X 1 B IT F A S T P A G E M O D E C M O S D YN A M IC R A M 60/60L 70/70L 80/80L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, 0CAA) 35 ns 40 ns 45 ns Max. CAS Access Time, (*CAC)

pec 810

Abstract: SY69952
Contextual Info: V OC-3/STS-3 CLOCK REC OVERING TRAN SCEIVER SYNERGY SY69952 SEMICONDUCTOR FEATURES DESCRIPTION • A complete ATM compatible single chip Transmitter & Receiver S yn e rg y's S Y 69 95 2 co n ta in s fu lly Integrated tra n s m itte r and re c e iv e r fu n c tio n s d e s ig n e d to p ro vid e c lo ck re co ve ry

Cross Reference power MOSFET

Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258

41000BJ

Contextual Info: MITSUBISHI LSIs MH1M36BJ-7, -8,-10 3 7 7 4 8 7 3 6 - B IT 1 0 4 8 5 7 6 - W 0 R D B Y 36-B IT D YN A M IC RAM DESCRIPTION This is consists o f th irty -six industry standard 1M x 1 b it PIN CONFIGURATION (TOP VIEW) dynam ic RAMs in SOJ. The m ounting o f SOJ on a single in-line package p ro ­

4035BF

Contextual Info: rr7 ^ J Ë SGS-THOMSON s [ U g « § H C C / H C F 4 0 3 5 B 4-STAGE PARALLEL IN/PARALLEL OUT SHIFT REGISTER . 4-STAGE CLOCKED SHIFT OPERATION • SYNCHRONOUS PARALLEL ENTRY ON ALL 4 STAGES ■ JK INPUTS ON FIRST STAGE ■ ASYNCHRONOUS TRUE/COMPLEMENT CON­

T7454

Contextual Info: IDT54/74FCT821AT/BT/CT HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTER MILITARY AND COMMERCIAL TEMPERATURE RANGES HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTER DESCRIPTION: FEATURES: − − − − − − − − − − − IDT54/74FCT821AT/BT/CT Low input and output leakage ≤1µ A max.

SO24-2

Contextual Info: IDT74FCT823AT/BT/CT/DT HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTER INDUSTRIAL TEMPERATURE RANGE HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTER IDT74FCT823AT/BT/CT/DT FEATURES: DESCRIPTION: − − − The FCT823T series is built using an advanced dual metal CMOS

079J

Contextual Info: 積層ハイロスインダクタ MULTILAYER FERRITE CHIP BEADS BK SERIES OPERATING TEMP. –55V+125C 特長 FEATURES YInternal silver printed layer creates a closed circuit which acts as a magnetic shield minimizing heat generation and crosstalk. YNo need for grounding provides greater circuit design flexibility.

CS5824

Abstract: DS90C385
Contextual Info: CS5824 28:4 LVDS Transmitter GENERAL DESCRIPTION FEATURES The CS5824 receives four sets of 7-bit data in CMOS logic level and converts them into four lowvoltage differential signaling LVDS serial channels. The 7-bit input data is referenced to the CKIN signal.

cs5828n

Abstract: CS5828 DS90C385 DSA0091128 Myson Century cs
Contextual Info: CS5828 28:4 LVDS Transmitter GENERAL DESCRIPTION FEATURES The CS5828 receives four sets of 7-bit data in CMOS logic level and converts them into four lowvoltage differential signaling LVDS serial channels. The 7-bit input data is referenced to the CKIN signal.

93C66LZ

Contextual Info: NM93C06LZ/C46LZ/C56LZ/C66LZ 256-/1024-/2048-/4096-Bit Serial EEPROM with Zero Power and Extended Voltage 2V to 6V (MICROWIRE Bus Interface) G eneral Description Features The NM 93C06LZ/C46LZ/C56LZ/C66LZ devices are 256/ 1024/2048/4096 bits respectively, of CMOS non-volatile

Contextual Info: 積層ハイロスインダクタ MULTILAYER FERRITE CHIP BEADS BK SERIES OPERATING TEMP. –55V+125C 特長 FEATURES YInternal silver printed layer creates a closed circuit which acts as a magnetic shield minimizing heat generation and crosstalk. YNo need for grounding provides greater circuit design flexibility.

Contextual Info: 積層ハイロスインダクタ MULTILAYER FERRITE CHIP BEADS BK SERIES OPERATING TEMP. –55V+125C 特長 FEATURES YInternal silver printed layer creates a closed circuit which acts as a magnetic shield minimizing heat generation and crosstalk. YNo need for grounding provides greater circuit design flexibility.

Contextual Info: HM514800A/AL Series HM51S4800A/AL Series Preliminary 5 2 4,28 8-w o rd x 8 -b it D ynam ic R a nd o m A c c e s s M em ory T he H ita c h i H M 5 I 4 8 0 0 A RAM o rg a n iz e d as ¿ire C M O S d y n a m i c 5 2 4 ,2 8 8 -w o rd Features x 8 -h it. H M 5 I 4 8 0 0 A have re a liz e d h i g h e r dens ity, h ig h e r

Contextual Info: M ITSU B ISH I LSIs M 5 M 4 V 1 6 1 6 5 C T P -5 ,- 6 ,- 7 , no' a - 5 S ,- 6 S ,- 7 S Son* HYPER PAG E M O DE 16777216-B IT 1048576-W Q R D BY 16-B IT D YN A M IC RAM DESCRIPTION This is a family of 1048576-word by 16-bit dynamic RAMS, fabricated with the high performance C M O S process, and is ideal

km44c256bz

Abstract: KM44C256B-10
Contextual Info: KM44C258B CMOS DRAM 2 5 6 K X 4 Bit C M O S Dynamic R AM with Static Column M ode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM44C258B is a CMOS high speed 262,144 x 4 D ynam ic Random A ccess Memory. Its de­ sign is o p tim ized fo r high perform ance ap p lica tio n s