TOGGLE NAND Search Results

88SS9187

Abstract: Marvell SSD controller
Contextual Info: ASD26-MT1 ET Series 2.5” SATA 6Gb/s SSD with 19nm Toggle MLC NAND Flash Features SSDs Sustained read up to 400 MB/s Sustained write up to 400 MB/s Capacity: 32, 64, 128, 256, 512 GB SATA 6Gb/s interface 19nm Multi-level cell NAND Flash with Toggle Mode technology

K9WBG08U1M

Abstract: Toggle DDR NAND flash K9WBG08U1M-PIB0 Samsung "NAND Flash" "ordering information" K9WBG08U1M-PCK0 k9wbg08u1 K9WBG08U1M-PIB0T NAND flash k9wbg08 Samsung EOL
Contextual Info: home > Products > Flash > NAND Flash> Products > K9WBG08U1M Flash Product Search NAND Flash NAND Flash > SLC -large block > K9WBG08U1M Part Number Search Products package & packing EOL Products Toggle DDR NAND Flash Flash SSD NOR Flash Flash Cards production & availability

Contextual Info: 0.13µm CMOS Standard Cell - SC13 - Preliminary Feature Sheet AMI Semiconductor 0.13µm CMOS Standard Cell - SC13 Key Features • Minimum drawn length: 0.13µm • Excellent performance: - 5GHz maximum flip-flop toggle rate - 33ps delay FO=2 for a 2-input NAND gate

EN210

Abstract: opja2 bb105 BF011 BF103 BF251 JKB10 TGB1000 BB015 EX310
Contextual Info: TGB1000 Series 0.8-|im BiCMOS Gate Arrays ¿IAR 2 9 199] RELEASE 1.0, JANUARY 1901 Very high performance 0.8-Mm EPIC BiCMOS process -Core Logic 2<input NAND gate typically switches in 130 ps intrinsic and 320 ps loaded -Flip-flop toggle frequency greater

K9F2G08U0B-PCB0

Abstract: samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 K9F2G08U0B samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND
Contextual Info: SAMSUNG's Digital World go contents Flash ● ● ● ● ● NAND Flash ❍ Products ❍ EOL Products Toggle DDR NAND Flash ❍ Products Flash SSD NOR Flash ❍ Products ❍ EOL Products Flash Cards ❍ Products ❍ EOL Products Product Search ● ● ●

AMIS500CXASCM

Abstract: 0.5um amis cmos
Contextual Info: AMI Semiconductor SC5 0.5µm CMOS Standard Cell SC5 0.5µm CMOS Standard Cell Feature Sheet Key Features • Excellent performance: • 590MHz maximum toggle rate on clocked flip-flops · High speed operation: 103ps delay FO=2; L=0mm for a 2-input NAND gate

Contextual Info: ASD18-MLC Series 1.8” SATA 6 Gb/s SSD with MLC NAND Flash 1 AdvancedTCA Features Sustained read up to 480 MB/s Sustained write up to 190 MB/s Capacity: 64, 128, 256 GB SATA 6 Gb/s interface Toshiba 24nm MLC Toggle NAND Flash Shock and vibration resistant

Contextual Info: ASDMS-MLC Series mSATA SATA 6 Gb/s SSD with MLC NAND Flash Features SSDs Sustained read up to 480 MB/s Sustained write up to 390 MB/s Capacity: 32, 64, 128, 256GB SATA 6 Gb/s interface Toshiba 19/ 24nm MLC Toggle NAND Flash Shock and vibration resistant High IOPS

sd 101k

Contextual Info: TRIPLED FLIP-FLOP ^SYNERGY tVlO lU l] SEMICONDUCTOR ADVANCE INFORMATION FEATURES • ■ 700 MHz max. Toggle Frequency. DESCRIPTION The SY100/101S331 offers three D-type, edge-triggered mas­ ter/slave flip-flops with true and com plem ent outputs, designed

Contextual Info: AT6000 Series Features • • • • • • • High Performance System Speeds to 70 MHz Flip-Flop Toggle Rates to 250 MHz Symmetrical Architecture Thousands of Registers Flexible Busing Network Predictable Timing Delays 100% Factory-Tested Cache Logic Design

CCGA 472

Abstract: CCGA 472 drawing MIL-STD-1553 schematic fpga CCGA -CG 472 CCGA 472 device size fpga radiation MIL-STD-1750 2500k 80C31 intel 82C51
Contextual Info: Semicustom Products UT0.25 HBD Hardened-by-Design Standard Cell Data Sheet March 2008 www.aeroflex.com/RadHardASIC FEATURES ‰ Up to 3,500,000 usable equivalent gates for 2.5V Core and 3,000,000 for 3.3V core using standard cell architecture ‰ Toggle rates up to 1.6 GHz

kg58

Abstract: S80C51 kg56 KG50000 SSP160
Contextual Info: ASIC PRODUCTS FUNCTION GUIDE 3. CMOS EMBEDDED ARRAY Products — Items KG60000E Design Rule um 0.8 Supply Voltage(V) 5.0 Maximum Usable Gates 200,000 Propagation Delay(ns)* 0.325 Maximum I/O Pads 440 Maximum Toggle Frequency(MHz) 250 Cell Library RAM/ROM/DPRAM/FIFO/Multiplier

Contextual Info: ASD26-MLC/MA2/HA2 Series 2.5” SATA SSD with MLC NAND Flash Features SSDs Sustained read up to 480 MB/s Sustained write up to 410 MB/s Capacity: 32, 64, 128, 256, 512 GB SATA 6 Gb/s interface ASD26-MLC SATA 3 Gb/s interface (ASD26-MA2/ HA2) Toshiba 24nm MLC/ SLC model Toggle NAND

0.35um amis cmos

Abstract: 2006 NAND GATE
Contextual Info: AMI Semiconductor SC3 0.35µm CMOS Standard Cell SC3 0.35µm CMOS Standard Cell Feature Sheet Key Features • Excellent performance: • 980MHz maximum toggle rate on clocked flip-flops · 67ps delay FO=2; L=0mm for a 2-input NAND gate at VDD=3.3V · 86ps delay (FO=2; L=0mm) for a 2-input NAND gate

TTL 3 input or gate

Abstract: RG3400 RG3410 RG3402 RG3412 RG3420 RG3422 RG3430 RG3432 RG3442
Contextual Info: Digital Circuits RAY III Series TTL Cont. Available TYPICAL CHARACTERISTICS Packages Tpd (ns) Type1 Description Number Fanout Function or Toggle Avg. Pwr. Function DC Noise Rate (Min) (mW) Margin (V) 50% Duty Pins 14 3 o o 24 u a ce RG3400 Quad 2 input AND gate

Contextual Info: AMI Semiconductor SC3 0.35µm CMOS Standard Cell - AMIS Feature Sheet SC3 0.35µm CMOS Standard Cell Key Features • Excellent performance: - 980MHz maximum toggle rate on clocked flip-flops - 67ps delay FO=2; L=0mm for a 2-input NAND gate at VDD=3.3V - 86ps delay (FO=2; L=0mm) for a 2-input NAND gate

AT6005A-4AC

Abstract: Inverter TBE
Contextual Info: Features • High Performance System Speeds > 100 MHz Flip-Flop Toggle Rotes > 250 MHz 1.2 ns/1.5 ns Input Delay 3.0 na/6.0 ns Output Delay • Up to 204 User IIOs • Thousands of Registers • Cache Logic” Design Complete/Partial In-System Reconfiguration

2500k

Abstract: leon3 Micromaster fpga radiation hp 530 54XX 80C196 80C31 UT54LVDS031LV UT54LVDS032LV
Contextual Info: Semicustom Products UT0.25 HBD Hardened-by-Design Standard Cell ASIC Data Sheet June 2010 www.aeroflex.com/RadHardASIC FEATURES ‰ Up to 3,000,000 usable equivalent gates using standard cell architecture ‰ Toggle rates up to 1.2 GHz ‰ Advanced 0.25μ silicon gate CMOS processed in a commercial fab

signal path designer

Contextual Info: PRELIMINARY D E V IC E S P E C IF IC A T IO N 320000 SERIES ECL/TTL "TURBO" LOGIC ARRAYS 020000 FEATURES PERFORMANCE SUMMARY PARAMETER Typical gate delay* Maximum toggle frequency Maximum TTL input frequency Maximum TTL output frequency Maximum ECL input frequency

82c51

Abstract: intel 82c51 MIL-STD-1553 schematic fpga Micromaster 54XX 80C196 80C31 UT06MRA010 UT06MRA025 intel 80c196 microcontroller
Contextual Info: Semicustom Products UT0.6µCRΗ/SRH Commercial RadHardTM and Strategic RadHardTM Gate Array Family Data Sheet January 2002 PRODUCT DESCRIPTION FEATURES q Multiple gate array sizes up to 600,000 usable equivalent gates q Toggle rates up to 150 MHz q Advanced 0.6µ 0.5µLeff radiation-tolerant silicon gate

d 2331

Abstract: half adder ic number of half adder ic with full specification vts 7070
Contextual Info: VITESSE SEMICONDUCTOR MflE D VITESSE FEATURES • Superior performance: high speed/low power • Array performance: - D flip-flop toggle rates: >1 GHz - Typical gate delay: 177 ps @ 1.1 mW 2-Input NOR, F.O. = 3 ,1 .5 mm wire - TTL/CM O S inputs/outputs to support up to

tl o84

Abstract: AT60054QI fyl 5042 ugc m6 90 v-0 tl o71 TL O74 AT6002 AT6003 AT6005 AT6010
Contextual Info: AT6000 Series Features • • • • • • • High Performance System Speeds > 100 MHz Flip-Flop Toggle Rates > 250 MHz 1.2 ns Input Delay 3.5 ns Output Delay Thousands of Registers Cache Logic Design Complete/Partial In-System Reconfiguration No Loss of Data or Machine State

VHDL 8 bit Bidirectional resistor with tri-state

Abstract: atmel 530 atmel 528 ATMEL 529
Contextual Info: ATLV Features * Specifically Designed for Battery Powered Applications 1.0 - 3.0 Volts and will Operate from 0.7 to 5.5 Volts * Static Current Drain of <75 nA at 1.0 Volts * 200 MHz Maxim um Toggle Frequency for Flip Flop at 1.5 Volts * 1.0 n Drawn G ate Length CMOS Gate Arrays

half adder ttl

Abstract: MA914 MA92 non inverting buffer 8 volts via apollo vp GEC Marconi GEC Plessey m SHR8
Contextual Info: GEC PL ESS EY S I M I , O \ I I, I. T O MAMMA Sea of Gates Radiation Hard Advanced Gate Array Design System K -> S21600FDS Issue 1.2 Novem ber 1990 Features • Channelless array architecture • Typical gate delay 1 OnS - toggle rates of 100MHz achievable