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    TO92 TRANSISTOR DATASHEET Search Results

    TO92 TRANSISTOR DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TO92 TRANSISTOR DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4619V

    Abstract: NPN transistor Electronic ballast to92
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT54 TO92 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.


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    PDF BUJ100B 4619V NPN transistor Electronic ballast to92

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated APT17 480V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 480V   BVCES > 700V   BVEBO > 10V Case: TO92 or SOT23 Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0


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    PDF APT17 MIL-STD-202, 200mg DS36298

    2N6428A

    Abstract: No abstract text available
    Text: 2N6428A tm NPN Epitaxial Silicon Transistor Features • This device is designed for high gain, general purpose amplifier applications at collector currents from 1uA to 200 mA. TO92 1 2 3 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted


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    PDF 2N6428A 2N6428A

    Untitled

    Abstract: No abstract text available
    Text: 2N6428A tm NPN Epitaxial Silicon Transistor Features • This device is designed for high gain, general purpose amplifier applications at collector currents from 1uA to 200 mA. TO92 1 2 3 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted


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    PDF 2N6428A 2N6428A 2N6428ABU 2N6428ATA

    BCD Semiconductor

    Abstract: transistor 2808 voltage to bcd
    Text: Preliminary Datasheet HIGH VOLTAGE NPN TRANSISTOR APT17 General Description Features The APT17 is high voltage, small signal NPN transistor. • Applications The APT17 is available in SOT-23 and TO-92 packages. SOT-23 High Collector-Emitter Voltage: 480V High Voltage and Low Standby Power Circuit for


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    PDF APT17 APT17 OT-23 OT-23 OT-23) BCD Semiconductor transistor 2808 voltage to bcd

    EU13003E

    Abstract: No abstract text available
    Text: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003E series are high voltage, high speed switching NPN Power transistors specially designed for off-line switch mode power supplies with low output power.


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    PDF APT13003E APT13003E O-126 O-126 EU13003E

    EU13003E

    Abstract: No abstract text available
    Text: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003E series are high voltage, high speed switching NPN Power transistors specially designed for off-line switch mode power supplies with low output power.


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    PDF APT13003E APT13003E O-126 O-126 EU13003E

    13003a TRANSISTOR

    Abstract: APT13003 bcd 13003BZ-E1
    Text: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003 series are high voltage, high speed switching NPN Power transistors specially designed for off-line switch mode power supplies with low output power.


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    PDF APT13003 APT13003 APT13003/13003A 13003a TRANSISTOR APT13003 bcd 13003BZ-E1

    act30bht

    Abstract: 13003 transistor power supply circuits ACT30BHT-A 13003 MOSFET transistor ACT30AHT-A 13002 and 13003 power transistor act30b E 13003 TRANSISTOR npn transistors 400V low power to92 flyback 13003
    Text: Datasheet Rev 2, 5/2005 ACT30 ACT30 HIGH PERFORMANCE OFF-LINE CONTROLLER ActiveSwitcherTM IC Family FEATURES GENERAL DESCRIPTION Lowest Total Cost Solution 0.15W Standby Power Emitter Drive Allows Safe NPN Flyback Use Hiccup Mode Short Circuit Current Mode Operation


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    PDF ACT30 65kHz 100kHz ACT30 act30bht 13003 transistor power supply circuits ACT30BHT-A 13003 MOSFET transistor ACT30AHT-A 13002 and 13003 power transistor act30b E 13003 TRANSISTOR npn transistors 400V low power to92 flyback 13003

    act30bht

    Abstract: 13003 transistor power supply circuits 13003 MOSFET transistor ACT30BHT-A ACT30AHT-A act30aht ACT30 flyback 13003 act30bh act30 application
    Text: Datasheet Rev 2, 5/2005 ACT30 ACT30 HIGH PERFORMANCE OFF-LINE CONTROLLER ActiveSwitcherTM IC Family FEATURES GENERAL DESCRIPTION Lowest Total Cost Solution 0.15W Standby Power Emitter Drive Allows Safe NPN Flyback Use Hiccup Mode Short Circuit Current Mode Operation


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    PDF ACT30 65kHz 100kHz ACT30 man50 act30bht 13003 transistor power supply circuits 13003 MOSFET transistor ACT30BHT-A ACT30AHT-A act30aht flyback 13003 act30bh act30 application

    APT13003Z-E1

    Abstract: transistor 2808 APT13003 bcd
    Text: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003 is a high voltage, high speed switching NPN Power transistor specially designed for off-line switch mode power supplies with low output power.


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    PDF APT13003 APT13003 APT13003Z-E1 transistor 2808 APT13003 bcd

    13003a TRANSISTOR

    Abstract: 13003a S W 13003a transistor 13003a APT13003 bcd 13003a TRANSISTOR NPN 13003Z "13003a APT13003A apt13003 TRANSISTOR
    Text: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003 series are high voltage, high speed switching NPN Power transistors specially designed for off-line switch mode power supplies with low output power.


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    PDF APT13003 APT13003 APT13003/13003A 13003a TRANSISTOR 13003a S W 13003a transistor 13003a APT13003 bcd 13003a TRANSISTOR NPN 13003Z "13003a APT13003A apt13003 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: REV. 2.1 FS8853-DS-21_EN Datasheet FS8853 300 mA LDO Linear Regulator SEP 2006 FS8853 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.:886-2-28094742 Fax:886-2-28094874


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    PDF FS8853-DS-21 FS8853 FS8853 OT-23 OT-89

    Untitled

    Abstract: No abstract text available
    Text: REV. 2.1 FS8855-DS-21_EN Datasheet FS8855 500 mA LDO Linear Regulator SEP 2006 FS8855 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.:886-2-28094742 Fax:886-2-28094874


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    PDF FS8855-DS-21 FS8855 FS8855 OT-89

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet LOW POWER PWM CONTROLLER FOR OFF-LINE BATTERY CHARGER General Description Features The AP3700 is a green-mode pulse width modulation PWM controller. It is specially designed for low power applications such as off-line battery chargers,


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    PDF AP3700 18Watt. AP3700 420mA,

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet LOW POWER PWM CONTROLLER FOR OFF-LINE BATTERY CHARGER General Description Features The AP3700E is a green-mode pulse width modulation PWM controller. It is specially designed for low power applications such as off-line battery chargers,


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    PDF AP3700E 18Watt. AP3700E 460mA,

    NPN EBC SOT-23

    Abstract: SOT-23 EBC NPN transistor ECB TO-92
    Text: Power Transistor & Small Signal Transistor Power Transistor & Small Signal Transistor MAXIMUM RATINGS NPN BVCEO BVCES IC PC PIN STYLE PNP BVCBO BVCES BVCEV V (V) (A) (W) 123 PJP110A PNP -20 -12 -10 75 BCE TO-220 PJP168A PNP -20 -13 -18 100 BCE TO-220 PJ13003


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    PDF PJP110A O-220 PJP168A PJ13003 PJ13005 PJ13007 NPN EBC SOT-23 SOT-23 EBC NPN transistor ECB TO-92

    BC546 "cross reference"

    Abstract: transistor BC 458 Transistor NPN BC 549B bc549 Cross Reference BC548 cross reference bc550 BC547ATA Amplifier with transistor BC549 bc549 of transistor BC 548
    Text: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 BC546 "cross reference" transistor BC 458 Transistor NPN BC 549B bc549 Cross Reference BC548 cross reference bc550 BC547ATA Amplifier with transistor BC549 bc549 of transistor BC 548

    TRANSISTOR BC 560c

    Abstract: transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
    Text: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 TRANSISTOR BC 560c transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560

    transistor BC 458

    Abstract: Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309 BC308
    Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


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    PDF BC307/308/309 BC309 BC307 BC308/309 BC308 BC308ABU transistor BC 458 Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309

    BC547

    Abstract: transistor bc547 specifications transistor bc547 applications bc547 marking transistor information of BC547 transistor BC 547B Use of BC547 transistor BC547ATA BC547-J22Z transistor BC 458
    Text: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    PDF BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 BC547 transistor bc547 specifications transistor bc547 applications bc547 marking transistor information of BC547 transistor BC 547B Use of BC547 transistor BC547ATA BC547-J22Z transistor BC 458

    TRANSISTOR 237b

    Abstract: BC239 NPN transistor BC238 NPN transistor cross reference bc237 BC239CTA transistor BC 458 BC237 transistor bc 238 b
    Text: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter


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    PDF BC237/238/239 BC239 BC237 BC238/239 TRANSISTOR 237b BC239 NPN transistor BC238 NPN transistor cross reference bc237 BC239CTA transistor BC 458 BC237 transistor bc 238 b

    bc338

    Abstract: No abstract text available
    Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    PDF BC327/328 BC337/BC338 BC327 BC328 BC327 bc338

    bs208

    Abstract: No abstract text available
    Text: Philips Components Datasheet status Product specification dateof issue February 1991 BS208 P-channel enhancem ent m ode vertical D -M O S transistor PIN CONFIGURATION FEATURES PIN • Direct interface to C -M O S • High-speed switching • No secondary breakdown.


    OCR Scan
    PDF BS208 B8075 bb53T31 Q03bQ bbS3T31 003b011 bs208