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    2n5248

    Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460
    Text: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640


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    PDF 2N5555 2N5638 2N5639 2N5640 PN4360 PN5033 2n5248 PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460

    2N5769

    Abstract: MPS805 pN2369 national 2N3704 TN67 2n5306 2N4124 NPN 2N3391A 2N5210 national tn3725a
    Text: Discrete POWER & Signal Technologies NPN Saturated Switches Device No. Case Style 2N5769 TO-92 92 PN2369 PN2369A PN4275 PN5134 TN3725A VCES* V VEBO VCBO CEO (V) (V) (V) Min Min Min 40 TO-92 (92) 40 TO-92 (92) 40 TO-92 (92) 40* TO-92 (92) 20* TO-226 (99)


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    PDF 2N5769 PN2369 PN2369A PN4275 PN5134 TN3725A O-226 D44C8 O-220 D44H1 2N5769 MPS805 pN2369 national 2N3704 TN67 2n5306 2N4124 NPN 2N3391A 2N5210 national tn3725a

    transistors BC 543

    Abstract: F245B BSR57M5 fmba0656 TJ309 f256c f245a PN5432 PN4857 2n 5459
    Text: NPN Multiple Chip Transistors Device No. [Mark] MMPQ2369A Case Style SO-16 S3 V CBO V VCES* EBO (V) (V) Min (V) Min Min VCEO 15 40 4.5 I CBO ICES* (nA) Max 400 @ VCB (V) Min 20 40 40 30 20 h FE V CE 10 10 30 100 0.35 1 0.4 1 0.2 0.2 & @ Max (mA) (V) 120


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    PDF MMPQ2369A SO-16 FMBA14 FFB2222A FMB2222A MMPQ2222A transistors BC 543 F245B BSR57M5 fmba0656 TJ309 f256c f245a PN5432 PN4857 2n 5459

    D43C8

    Abstract: No abstract text available
    Text: Discrete POWER & Signal Technologies PNP Saturated Switches Device No. 2N5771 PN3640 PN4258 ST5771-1 TN3467A Case Style VCBO VCEO VEBO V Min (V) Min (V) Min TO-92 (92) 15 15 4.5 TO-92 (92) 12 TO-92 (92) 12 TO-92 (92) 15 TO-226 (99) 40 12 12 15 40 4 4.5 4.5


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    PDF 2N5771 PN3640 PN4258 ST5771-1 TN3467A O-226 D43C8 O-202 D45C8 O-220 D43C8

    C945K

    Abstract: c550b C548B TO-92 227 1020 C2785 bc 9013 MPS6521 pn3565 cs9015 C559B
    Text: NPN Low Level Amplifiers Device No. [Mark] K S C 900 Case Style I CBO IC V CE VCB h FE & @ Min Max mA (V) (nA) @ (V) Max V CE(SAT) (V) Max & V BE(SAT) V BE(ON) * IC @ (mA) IC C ob (pF) (V) (I = ) Min Max B 10 Max I (MHz) @ C Min (mA) NF (dB) Max Test Cond.


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    PDF T5089 O-236 SS9011 C945K c550b C548B TO-92 227 1020 C2785 bc 9013 MPS6521 pn3565 cs9015 C559B

    A 928A

    Abstract: 74Ks A992 sc2316 A928a sc1845 PNP 3-224 2N5401K
    Text: PNP Medium Power Transistors Device No. [Mark] Case Style VCES* V V CBO EBO V (V) Min (V) Min Min VCEO (continued) ICBO IC V CE VCB hFE & @ Min Max (mA) (V) (nA) @ (V) Max V BE(SAT) V BE(ON) * IC C ob (mA) @ (pF) (V) & IC (V) Max Max (I = ) Min Max B 10


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    PDF KSA1203 ZT6726 O-92L OT-89 O-261 O-226 O-236 A 928A 74Ks A992 sc2316 A928a sc1845 PNP 3-224 2N5401K

    c546b

    Abstract: c557b of bc 237 b C547B c558b BC 9014 ba W61C c 557b 082BC w61b
    Text: NPN General Purpose Amplifiers & Switches Device No. [Mark] B C W65C [ED ] Case Style TO-236 49 V CEO (V) Min 32 B C X 58 TO-92 (97) 32 BSR14 [U8] TO-236 (49) 40 V CBO VCES* (V) Min 60 75 V EBO (V) Min 5 I CBO ICES* (nA) Max 20* @ VCB (V) 32 TO-236 (49)


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    PDF O-236 c546b c557b of bc 237 b C547B c558b BC 9014 ba W61C c 557b 082BC w61b

    ST3904

    Abstract: NS3903 TIS92 2N2926 NS3904 2n2926 ses 2N915 MPQ3904 2N3694 2N2712
    Text: NPN Transistors Case Style Vcbo V Min vCEO (V) Min Vebo (V) Min 2N2712 TO-92 (94) 1B 18 2N2714 TO-92 (94) 18 2N2923 TO-92 (94) 2N2924 VCE(SAT) VBE(SAT) A m p lifie r s . C0b (PF) Max a n d S w itc h e s toff (ns) Max NF (dB) Max Test Conditions Process No.


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    PN544

    Abstract: TI59 national 2N3859 2N2712 2N915 MPQ2222 MPQ6700 T1890 TN2219 PN101
    Text: This NPN Transistors NATL @ . VCE SAT VBE(SAT) (V) (V) c Max Min Max v * C0b (PF) Max * ‘ off (ns) Max NF (dB) Max hFE Min Max 5 500 18 75 225 2 4.5 18 5 500 18 75 225 2 4.5 25 25 5 100 25 90 180 2 (1 kHz) 10 10 10 TO-92 (94) 25 25 5 100 25 150 300


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    PDF T-29-Of T-29-01 PN544 TI59 national 2N3859 2N2712 2N915 MPQ2222 MPQ6700 T1890 TN2219 PN101

    NPN 2N3391A

    Abstract: 2N3702 NATIONAL SEMICONDUCTOR PS6514
    Text: N IMAIL SEPIICOND -[DISCRETE tflE D • b5D113Q Q03TSE3 b?t. ■ Devices Volts Min 25 (mA) Max Min Max 2N3391A 100 250 500 2N3392 100 150 300 NPN ra p fllA NF (dB) Max 2.0 120 Typ. 2.0 5.0 T0-92(94) 360 2.0 120 Typ. 2.0 TO-92(94) 360 120 Typ. 2.0 TO-92(94)


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    PDF b5D113Q Q03TSE3 2N3391A 2N3392 2N3393 2N3415 2N4124 2N5172 BC238 BC338 NPN 2N3391A 2N3702 NATIONAL SEMICONDUCTOR PS6514

    2n3663 national semiconductor

    Abstract: No abstract text available
    Text: Discrete POWER & Signal Technologies National Semiconductor" NPN RF Amplifiers and Oscillators V CEO V EBO *CBO Device No. Case Style ^C B O V Min (V) Min (V) Min MPS517 TO-92 (92) 20 12 2.5 2 MPSH10 TO-92 (96) 30 25 3 2N3663 TO-92 (94) 30 12 2N5770 TO-92


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    PDF MPS517 MPSH10 2N3663 2N5770 PN918 PN3563 NPS6543 MPSH11 MPSH24 MPSH34 2n3663 national semiconductor

    2n3391a

    Abstract: No abstract text available
    Text: NPN Transistors bSDllBD uctor Discrete POWER & Signal Technologies " NPN General Purpose Amplifiers and Switches OOHÜMbl 2fil I to Device No. Case Style 2N3390 VCBO V CEO ^EBO V Min (V) Min (V) Min TO-92 (94) 25 25 2N3391A TO-92 (94) 25 2N3392 TO-92 (94)


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    PDF 2N3390 2N3391A 2N3392 2N3393 2N3415 2N3416 2N3417 2N3704 2N5172 IVPS8098

    2N5306 NATIONAL SEMICONDUCTOR

    Abstract: NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A
    Text: This NPN Transistors v EBO V Min Ic e s ' 'CBO a (jiA) Max Its Case Style 2N5305 TO-92 (94) 0.1 2N5306 TO-92 (94) 2N5307 *c @ VCE (mA) (V) VCE(SAT) VBE(SAT) . (V) & (V) 0 C Max Min Max ( ) fT (MHz) C0b (pF) Max Min @ lc (mA) Process No. 25 2000 20,000 2


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    PDF D0370b0 2N5306 NATIONAL SEMICONDUCTOR NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A

    BC286

    Abstract: 2N3252 2n55s1 2N3304 CS1602B bc3206 MPS9680T BC2388 MPS9681T MPS901
    Text: CRIMSON SE M IC ON DU CT OR INC TT DE | SSlMGTt DDDDET3 □ 2514096 C R I M S O N S EM IC O N D U C T O R INC 99D D 00293 T - 2 - 7 - ó / By.CEO BVCBO BVEBO ICBO @ VCB HFE @ VC & iC v COB Vi MiN IV1M.N . MN i-Al MAh (V MIN MA> .V (-*• i|l w»> FT V-'l


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    PDF 2S14096 2N1507 2N1566 2N1613 2NI711 2N1889 2N1890 2N1893 2N1973 2N1974 BC286 2N3252 2n55s1 2N3304 CS1602B bc3206 MPS9680T BC2388 MPS9681T MPS901

    PN4250

    Abstract: 2N4248 2N4288 2N4249 2N4250A 2N4250
    Text: This Material PNP Transistors Copyrighted 3> —3 LOW LEVEL AMPS C«a Style Vc b o V Min v CEO (V) Min vebo 2N2604 TO-46 60 45 6 By Type No. (V) Min •CBO VCB (nA) (V) Max 10 *>FE 'C » VCE Min Max (mA| (V) 350 45 10 VCE(SAT) VBE(SAT) (V) 8. (V) »


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    PDF bSD1130 0035M4E PN4250 2N4248 2N4288 2N4249 2N4250A 2N4250

    PN4250

    Abstract: MPS-A70
    Text: PNP Transistors ö cn o L O W LEVEL AMPS Type No. Case Style Vc b o V) Min V CEO (V) Min 2N2604 TO-46 60 45 DO m v EBO (V) Min 6 'CBO (" A I Max 10 v CR (Ç f *>FE a Min Max 350 45 60 40 2N2605 TO-46 60 ‘ 45 6 10 2N3548 TO-18 TO-18 60 60 60 45 6 6 25


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    PDF 2N2604 2N2605 2N3547 2N3549 2N3550 2N3799 2N5087 2N5227 MPSA70 MPS6523 PN4250 MPS-A70

    National 2N3819

    Abstract: 2N5248
    Text: Discrete POWER & Signal Technologies National Semiconductorm N-Channel JFETs RF, VHF, UHF Amplifiers B V GSS Device No. C ase Style 2N3819 2N5245 2N5246 2N5247 2N5248 TO-92 TO-92 TO-92 TO-92 TO-92 25 30 30 30 30 1 1 1 1 1 2N5484 2N548S 2N5486 2N5949 2N5950


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    2N3702 NATIONAL SEMICONDUCTOR

    Abstract: 2N4917 2n5354 national semiconductor 2n3644 national semiconductor 2N4121 2N5143 MP03906 TIS92 2N3638A 2N3644
    Text: Case Style VcBO V Min VCEO (V) Min Vebo (V) Min 2N2904 TO-5 60 40 5 Ices * Icbo @ Vcb (nA) (V) Max 20 50 By Its 2N2904A TO-5 60 60 40 5 5 10 20 50 50 Manufacturer also Avail. JAN/TX/V Versions 2N2905A also Avail. JAN/TX/V Versions TO-5 2N2906 TO-18 60 60


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    PDF bS0113Q T-37-Of T-37-01 2N3702 NATIONAL SEMICONDUCTOR 2N4917 2n5354 national semiconductor 2n3644 national semiconductor 2N4121 2N5143 MP03906 TIS92 2N3638A 2N3644

    DH3724CN

    Abstract: MPSH30 transistor se5020 MPS6544 2N5189 2N3444 2N3563 2N3646 DH3724CD DH3724
    Text: 3> —3 r* to m zs M r> o SATURATED SWITCHES Continued Type No. Case Stylo 2N5769 TO-92 (92) 2N5772 TO-92 (92) VCES* v CBO (V) Min VcEO (V) Min v EBO (V) Min 40 15 4.5 40 15 15 5 'CES* 'CBO « (nA> Max 400 500 MPS706 TO-92 (92) 15 MPS834 TO-92 (92) 40 MPS2369


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    PDF 2N706 2N743 2N744 2N753 2N834 2N2369 TIS86 TIS87 MPS6540 MPS6544 DH3724CN MPSH30 transistor se5020 2N5189 2N3444 2N3563 2N3646 DH3724CD DH3724

    2N3563

    Abstract: se5020 MPS6544 MPS-6544 SE5023 2N347B 2n3600 tis86 MPS6547 2N2857
    Text: NPN Transistors VCES* VCBO V Min Vceo (V) Min v EBO (V) Min 2N2857 TO-72 30 15 2.5 2N3478 TO-72 30 15 ' CB0 Vcr <"A) @ “ Max 11 *>FE @ >C & Vce Min Max (mA) (V) 10 15 30 2 20 1 25 150 150 3 2 VCE(SAT) VßE(SAT) . (V) @ (V) & Max Min Max < "*> Cob/Cfo (PF)


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    PDF 2N2857 2N347B 2N3600 2N3932 2N3933 2N4259 MPSH34 TIS86 TIS87 MPS6540 2N3563 se5020 MPS6544 MPS-6544 SE5023 MPS6547

    CS9016

    Abstract: SA733 CS9015 2SA1015 CS9014C CS9015C CS9016F CS9016H CS9018D CS9018F
    Text: This Consumer Series Material Consumer Series IT continued In a bJ fcj Copyrighted a a jr a tn UJ b-1 By -C O) Device No. Case Style CS9014C ^C E O VEBO *CBO hFE w 'c V V CE(SAT) V BE(SAT) •c NF (dB) Max Test Conditions Process No. fT C<* Min Max (mA)


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    PDF CS9014C CS9015C CS9016F CS9016H CS9018D CS9018F CS9Q18G CS9018I NR431EF CS9016 SA733 CS9015 2SA1015

    Untitled

    Abstract: No abstract text available
    Text: PNP Transistors * D is c r e te P O W E R & S ig n a l T e c h n o lo g ie s National p^p s e m i c o n d u c t o r v D evice No. 2N4402 2N4403 Case Style TO-92 92 TO-92 (92) ¥ cbo v v CEO v V EBO (V) Min (V) Min (V) Min 40 40 5 40 40 *CBO M ax Q e h FE


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    PDF 2N4402 2N4403

    SA733

    Abstract: CS9016 2SC1815 CS9018 2SA1015 CS9014C CS9015C CS9016F CS9016H CS9018D
    Text: Consumer Series Consumer Series continued ^080 ^C E O VEBO *CBO Case Style Min Min Min CS9014C TO-92 (92) 50 40 5 50 CS9015C TO-92 (92) 50 40 5 CS9016F TO-92 (92) 30 20 CS9016H TO-92 (92) 30 I CS9018D TO-92 (92) CS9018F TE SOhOO Device No. S5h DETTOSI I


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    PDF CS9014C CS9015C CS9016F CS9016H CS9018D CS9018F CS9Q18G CS9018I NR431EF SA733 CS9016 2SC1815 CS9018 2SA1015

    2SA1015

    Abstract: No abstract text available
    Text: I t i 50113Q 00M0S31 MBS I Consumer Series Consumer Series continued y ceo V EBO (V) Min (V) Min (V) Min TO-92 (92) 50 40 5 50 CS9015C TO-92 (92) 50 40 5 CS9016F TO-92 (92) 30 20 CS9016H TO-92 (92) 30 CS9018D TO-92 (92) CS9018F Device No. Case Style CS9014C


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    PDF 50113Q 00M0S31 CS9014C CS9015C CS9016F CS9016H CS9018D CS9018F CS9Q18G CS9018I 2SA1015