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    BFW 10 fet

    Abstract: transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 184 transistor BF 253 transistor bf 241 BF 184 transistor transistor bf 495 transistor bf 254
    Text: 6091788 MICRO ELECTRONICS CORP_ 820 00652 D J 3 /~>7 MICRO ELECTRONICS CORP 02 DE | bCH17fl0 DDDDbSS 1 V C E SA T CASE Pd (mVY) *C Im A) V 'c CEO (V) min max Im A l V CE (V) 167 — — — — 1 3 3 2.5 4 max 'c fT min Cob Cre* max N.F. (MHz)


    OCR Scan     		0000fc O-72J O-106 O-72G to-02 melf-002. BFW 10 fet transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 184 transistor BF 253 transistor bf 241 BF 184 transistor transistor bf 495 transistor bf 254 PDF

    BF311

    Abstract: BF494 bf199 BF115 BF158 BF152 BF153 BF155 BF159 BF314 BF167
    Text: RF-IF High Frequency Transistors POLA­ RITY IC mA VCE (V) max (V) IC (mA) min (MHz) 1 3 3 2.5 4 10 6 12 10 10 _ 0.5 0.5 0.3 0.5 . 10 10 10 10 230+ 600 300 400 700+ 0.8* 1.2 1.2 0.4+* 1.2* 3.5+ 9 3.5 4 3 4 7 2 10 10 10 10 10 10 10 10 - 700+ 400 300+ 350


    OCR Scan     		BF115 O-72J BF152 O-106 BF153 BF155 O-72G BF158 BF311 BF494 bf199 BF159 BF314 BF167 PDF

    2sc948

    Abstract: 2N4935 2SC922 2SC1674 2sc717 2SC947 2SC839 2sc929 2SC930 2SC1730
    Text: RF-IF High Frequency Transistors POLA­ RITY fT VCE sat HFE MAXIMUM RATINGS TYPE NO. CASE Pd (mW) ("A ) VCEO (V) IC min max IC (mA) VCE (V) max (V) IC (mA) nun (MHz) Cob Cre* max (PF) _ N.F. max (dB) 2N4934 2N4935 2N4936 2N4994 2N4995 N N N N N TO-72J TO-72J


    OCR Scan     		2N4934 O-72J 2N4935 2N4936 2N4994 O-92F 2N4995 2sc948 2SC922 2SC1674 2sc717 2SC947 2SC839 2sc929 2SC930 2SC1730 PDF

    MPS6539

    Abstract: BF224 BF369 bf 182 bf310
    Text: RF-IF High Frequency Transistors M A X IM U M R A T IN G S TY PE NO. PO LA ­ R IT Y CASE m W (raA ) VcEO vv CBO* (V ) Pd Ic H FE ^CE(sat) m in m ax Ic (m A ) ^CE (V ) fT C 0b r* * '-'re N .F . m ax (p F ) m ax (d B ) (V ) (m A ) m in (M H z ) 0.3 0.95


    OCR Scan     		BF155 BF167 BF180 BF18I BF183 BF200 BF224 BF240 BF24I BF253 MPS6539 BF369 bf 182 bf310 PDF

    bf311

    Abstract: BF494 BF253 BF595 BF200 transistor BF271 BF115 BF153 BF158 BF184
    Text: TYPE NO. P O L A R IT Y RF-1F High Frequency Transistors M A X IM U M R A T IN G S Pd ImWI 'c Im A V C EO V ) fT min Cob Cre« max max (MHz) (pF) (dB) 230+ 600 300 400 700+ 0.8 • 1.2 1.2 0.4+ • 1.2 • 3.5+ — — 9 3.5 700+ 400 300+ 350 675+ 1.2 •


    OCR Scan     		BF115 O-72J BF152 O-106 BF153 BF155 O-72G BF158 bf311 BF494 BF253 BF595 BF200 transistor BF271 BF184 PDF

    transistor 2SC930

    Abstract: mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60
    Text: S E M I C O N D U C T O R S INC QTE D | S l B b b S O G G O Q S ? ^ M | *7”" POLARITY RF-IF High Frequency Transistors CASE BF BF BF BF BF 115 152 153 155 158 N N N N N TO-72J TO-106 TO-106 TO-72G TO-106 BF BF BF BF BF 159 160 173 181 182 N N N N N TO-106


    OCR Scan     		O-72J O-106 O-72G -26UNF-2A O-48D transistor 2SC930 mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60 PDF

    2n4121

    Abstract: 2n5139 TO-106 2N3563 case to106 BF154 bf152 2N3640 2n5138 to106
    Text: High Frequency Tron/i/tor/ TO-106 ÏO -72 Maximum Ratings Electrical Characteristics @ T A = 25 C T Y P E NO. NPN PNP PD •c b v cbo L V CEO bv h F E @ V C E @ lC EBo @ T a * 25°C m in ./max. m ax. 0 .2 5 V 0 .2 5 V 0 .6 0 V 0 .5 0 V 0 .4 0 V @ @ @ @ @ @


    OCR Scan     		O-I06 200mW 600MHz O-106 900MHz 2n4121 2n5139 TO-106 2N3563 case to106 BF154 bf152 2N3640 2n5138 to106 PDF

    2SC922

    Abstract: 2SC948 2N4935 2N5132 2sc929 2N4994 2SC947 2SC1789 2SC838 2N4934
    Text: RF-IF High Frequency Transistors POLA­ RITY fT VCE sat HFE MAXIMUM RATINGS TYPE NO. CASE Pd (mW) ("A ) VCEO (V) IC min max IC (mA) VCE (V) max (V) IC (mA) nun (MHz) Cob Cre* max (PF) _ N.F. max (dB) 2N4934 2N4935 2N4936 2N4994 2N4995 N N N N N TO-72J TO-72J


    OCR Scan     		2N4934 O-72J 2N4935 2N4936 2N4994 O-92F 2N4995 2SC922 2SC948 2N5132 2sc929 2SC947 2SC1789 2SC838 PDF

    2SC817

    Abstract: 2sc929 2SC948 2SC1730 transistor 2sc930 2SC947 2N5130 2n5179 2SC1789 2SC838
    Text: NO. MAXIMUM RATINGS Pd ImWl •c ImAI V CE SAT V CEO (V) min max 'c ImAI V CE (V) max (V) 'c (mA) fT min Cob Cre« max max (MHz) (pF) (dB) N.F. 2N5127 2N5130 2N5131 2N5132 2N5179 N N N N N TO-106 TO-106 TO-106 TO-106 TO-72G 200 200 200 200 200 100 50 200


    OCR Scan     		2N5127 O-106 2N5130 2N5131 2N5132 2N5179 O-72G 2SC817 2sc929 2SC948 2SC1730 transistor 2sc930 2SC947 2SC1789 2SC838 PDF

    BF311

    Abstract: BF200 transistor BF494 bf199 BF184 BF494 BF494 BF271 BF597 BFX60 BF184 Bf240
    Text: RF-IF High Frequency Transistors POLA­ RITY IC mA VCE (V) max (V) IC (mA) min (MHz) 1 3 3 2.5 4 10 6 12 10 10 _ 0.5 0.5 0.3 0.5 . 10 10 10 10 230+ 600 300 400 700+ 0.8* 1.2 1.2 0.4+* 1.2* 3.5+ 9 3.5 CASE Pd (mW) IC (mA) VCEO (V) min max N.F. Cob Cre* max


    OCR Scan     		BF115 O-72J BF152 O-106 BF153 BF155 O-72G BF158 BF311 BF200 transistor BF494 bf199 BF184 BF494 BF494 BF271 BF597 BFX60 BF184 Bf240 PDF

    2N3856

    Abstract: No abstract text available
    Text: RF-IF High Frequency Transistors M A X IM U M R A T IN G S TYPE NO. H ra fr C A SE P< m W Ic (m A) VcEO (V) m in m as VcE (V) 10 10 2 10 4 10 10 10 10 10 - . - 1 1 1 1 5 5 5 5 5 10 0.3+ 0.5 0.5 0.3+ 0.5 12 1 10 10 10 N N N N N TO-92A TO-92A TO-92A TO-92A


    OCR Scan     		MPS3826 MPS3827 MPS6507 MPS6511 MPS6539 MPS9425 MPS9623 MPS9624 MPS9625 MPSH11 2N3856 PDF

    BF311

    Abstract: BF374 BF494 bf199 BF199 BF253
    Text: RF-IF High Frequency Transistors MAXIMUM RATINGS TYPE NO. POLA­ RITY H fE V eti* * Ic mA) V cE O (mW) Pd (V) min max BF115 BF155 BF167 BF173 BF180 N N N N N TO-72J TO-72G TO-72J TO-72J TO-72G 165 200 150 260 150 30 20 25 25 20 30 40 30 25 20 48 20 27 38


    OCR Scan     		BF115 BF155 BF167 BF173 BF180 BF181 BF311 BF374 BF494 bf199 BF199 BF253 PDF