LM7805K
Abstract: F0513 LM7915 to-3 lm140AH LM7812K F0534 LM7812 TO-39 mil-std-883 F0883 5962-8874601UX
Text: Semelab Device Line Data BS Approval DSCC Approval QPL Approval Package IP109AK-883 - - MIL-STD 883B TO3 TO204AA IP109AK-883B - - MIL-STD 883B TO3 (TO204AA) IP109K-883B - - TO3 (TO204AA) IP109K-8QR-B - - IP109MAH-883B - - MIL-STD 883B Screened to MIL-STD
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IP109AK-883
O204AA)
IP109AK-883B
IP109K-883B
IP109K-8QR-B
IP109MAH-883B
IP109MAH-8QR-B
O205AD)
LM7805K
F0513
LM7915 to-3
lm140AH
LM7812K
F0534
LM7812 TO-39
mil-std-883
F0883
5962-8874601UX
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smd 662
Abstract: 2N7422 2n7425 2N7426 2N7383 601 SMD 2N7389 IRHM9260 2N7422U 2N7219U
Text: QPL Product Matrix February, 1999 Government & Space Products Package TO39 LCC MO036 MO036 MO036 TO39 LCC TO39 LCC TO3 TO39 LCC TO3 TO39 LCC TO39 LCC TO257 TO257 TO39 LCC TO254 SMD-1 TO254 SMD-1 TO3 TO254 SMD-1 TO254 SMD-1 TO254 TO-254 SMD-1 TO-254 SMD-2 TO-254
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MO036
O-254
2N6782,
IRFF110
2N6782U,
IRFE110
smd 662
2N7422
2n7425
2N7426
2N7383
601 SMD
2N7389
IRHM9260
2N7422U
2N7219U
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Untitled
Abstract: No abstract text available
Text: ROITHNER LASERTECHNIK PRESENTS NEW HIGH POWER RED LASER DIODES 9 mm laser diode package RLT635-100G, 635 nm, 100 mW, mm, 9 mm, datasheet RLT650-200G, 650 nm, 200 mW, mm, 9 mm, with photodiode, datasheet TO3 laser diode package RLT635-150-TO3, 635 nm, 150 mW, mm, TO3, without photodiode, datasheet
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RLT635-100G,
RLT650-200G,
RLT635-150-TO3,
RLT635-300-TO3,
RLT635-500-TO3,
RLT65300T,
RLT650-500-T,
RLT650-1000-T,
RLT635-150-C,
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Untitled
Abstract: No abstract text available
Text: -/ , Una. CX 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 PMD18D100 NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm FEATURES • TO3 PACKAGE • 100V • 100APEAK L • 300 WATTS *.* DESCRIPTION TO3 Package.
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PMD18D100
100APEAK
PMD18D100
100mA
300us,
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6098B
Abstract: TO202 package SW253 SW63-6 PF527 6099B TO218 package CLP-204 6100B to3 HEATSINK
Text: HEATSINKS & MOUNTINGS HEATSINKS TO39/TO5 package TO3 package 5F series PF527 Extruded push-on heatsinks to fit a single TO39/TO5 package. Choice of thermal resistance. Space saving clamp-over heatsink to fit a single TO3 package. Th. Res. Manf. Part No. &
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O39/TO5
PF527
O39/TO5
EAD063NN
EAD063TH
CLIP-04
EAC025HC
EAC038HC
EAC050HC
6098B
TO202 package
SW253
SW63-6
PF527
6099B
TO218 package
CLP-204
6100B
to3 HEATSINK
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TO3 package RthJA
Abstract: TO3 RthJA BD684 CS684 to3 HEATSINK
Text: CS684 TO3 PNP SILICON DARLINGTON POWER TRANSISTORS PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-3 metal package. Compliance to RoHS. CS684 is the BD684 in TO3 package. ABSOLUTE MAXIMUM RATINGS
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CS684
BD684
TO3 package RthJA
TO3 RthJA
to3 HEATSINK
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2n7425
Abstract: 2n7389 2N7422 2N7433 2N7389 TO39 TO-254 2N7269 2n7391 to39 2N7262
Text: MIL-PRF-19500 QPL STATUS QPL Status Hex Size 1 1 1 1 2 2 3 3 3 3 3 3 3 3 4 4 5 5 5 5 CH N N N/P P N P N N P P N N P P N P N N N N Package TO39 M0036 MO036 MO036 TO39 TO39 TO3 TO39 TO3 TO39 TO39 TO257 TO257 TO39 TO254 TO254 TO3 TO254 TO254 TO254 March 1998
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MIL-PRF-19500
M0036
MO036
2N7394
2N6782
2N7334
2N7336
2N7335
2N6788
2n7425
2n7389
2N7422
2N7433
2N7389 TO39
TO-254
2N7269
2n7391
to39
2N7262
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nte5534a
Abstract: NTE5534 SCR 535 A scr control circuit for welding
Text: NTE5534A Silicon Controlled Rectifier SCR 600V, 50 Amp, TO3 Isolated Square Pack Description: The NTE5534A is a general purpose SCR in a TO3 isolated high power square pack designed for use in applications where power handling and power dissipation are critical, such as solid state relays,
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NTE5534A
NTE5534A
2500VRMS
NTE5534
SCR 535 A
scr control circuit for welding
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W3400
Abstract: W3400T W3400G
Text: Iss: 1 WINSLOW ADAPTICs W3400 TO3 Transistor Socket W3400 TO3 5A Part Numbers W3400T-Tin W3400G-Gold Filled Phenolic Resin Also available from Winslow Adaptics are cost effective, time saving solutions to test, obsolescence, supply problems and upgrades. OEMs can upgrade equipment with custom Adaptics utilising additional logic, often saving considerable cost and time on re-design. If lead-time becomes an issue contact us for a suitable package converter. We specialise in conversion of all package lead-frames. For
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W3400
W3400T-Tin
W3400G-Gold
W3400T
W3400G
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NTE405
Abstract: No abstract text available
Text: NTE405 Hardware Heat Sink for TO3 Type Package Includes Base and Top Piece Description: The NTE405 is a 2-piece heat sink designed for circuit board mounting. Specifications: Finish . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Black Anodize
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NTE405
NTE405
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TO220 HEATSINK DATASHEET
Abstract: to220 mica 7721-7PPS Bush TO3 SILICONE MICA SHEET DATA SHEET 50A227B WARTH TO3P package 50B247A to3 HEATSINK
Text: MOUNTING HARDWARE HEATSINKS & MOUNTINGS WASHERS Economical, commercial grade silicone rubber insulating washers reinforced with glass fibre. Flame retardant to UL94V-0. Supplied specifically for the packages shown below. Colour - Grey. TO220 TO3P/TO247 TO3
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UL94V-0.
O3P/TO247
50B220A
50B247A
50B003A
50A220A
50A220B
50A103A
O5/TO39
TO220 HEATSINK DATASHEET
to220 mica
7721-7PPS
Bush
TO3 SILICONE MICA SHEET DATA SHEET
50A227B
WARTH
TO3P package
50B247A
to3 HEATSINK
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NTE284
Abstract: NTE284MP NTE285 NTE284 equivalent audio amplifier 100w transistor npn 100w amplifier pnp matched pair 100w audio amplifier
Text: NTE284 NPN & NTE285 (PNP) Silicon Complementary Transistors Audio Amplifier Output Description: The NTE284 (NPN) and NTE285 (PNP) are silicon complementary power transistors in a TO3 type package designed for use in power amplifier applications. Applications:
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NTE284
NTE285
NTE284MP
NTE284
NTE285MP
NTE285
NTE285MCP
NTE284 equivalent
audio amplifier 100w
transistor npn 100w amplifier
pnp matched pair
100w audio amplifier
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Untitled
Abstract: No abstract text available
Text: SILICON DARLINGTON NPN TRANSISTOR MJ4035 • Monolithic Darlington Configuration With Integrated Anti-Parallel Collector-Emitter Diode • Hermetic TO3 Metal Package. • Ideally Suited For General Purpose Switching And Amplifier Applications • Screening Options Available
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MJ4035
300us,
O-204AA)
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL PNP TRANSISTOR 2N4906 • Low Collector Saturation Voltage. • Hermetic TO3 Metal Package. • Designed For General Purpose, Switching and Power Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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2N4906
O-204AA)
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2N4905
Abstract: No abstract text available
Text: SILICON EPITAXIAL PNP TRANSISTOR 2N4905 • Low Collector Saturation Voltage. • Hermetic TO3 Metal Package. • Designed For General Purpose, Switching and Power Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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2N4905
O-204AA)
2N4905
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BUX12
Abstract: LE17
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX12 • High Current Capability. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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BUX12
O-204AA)
BUX12
LE17
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2N5883
Abstract: LE17
Text: SILICON EPITAXIAL PNP TRANSISTOR 2N5883 • High Voltage, Low Saturation Voltages. • Hermetic TO3 Metal Package. • Designed For Power Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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2N5883
O-204AA)
2N5883
LE17
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SMP525G-EN
Abstract: No abstract text available
Text: SMP525G-EN MECHANICAL DATA Dimensions in inches P.I.N. PHOTODIODE FEATURES PostScript Picture oved\packages\opto\to3 • ASYMMETRIC NARROW RECEIVING ANGLES • EXCELLENT LINEARITY • LOW NOISE • WIDE SPECTRAL RESPONSE • WIDE INTRINSIC BANDWIDTH • LOW LEAKAGE CURRENT
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SMP525G-EN
SMP525G-EN
Package1927.
900nm
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2n5876
Abstract: No abstract text available
Text: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5876 PNP 2N5878 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS
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2N5876
2N5878
O-204AA)
2N5876
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Untitled
Abstract: No abstract text available
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO
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BUX10
O-204AA)
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150w darlington transistor to3 package
Abstract: LE17 MJ4035 TRANSISTOR C 1177
Text: SILICON DARLINGTON NPN TRANSISTOR MJ4035 • Monolithic Darlington Configuration With Integrated Anti-Parallel Collector-Emitter Diode • Hermetic TO3 Metal Package. • Ideally Suited For General Purpose Switching And Amplifier Applications • Screening Options Available
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MJ4035
300us,
O-204AA)
150w darlington transistor to3 package
LE17
MJ4035
TRANSISTOR C 1177
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BUX11
Abstract: LE17
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX11 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO
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BUX11
O-204AA)
BUX11
LE17
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Untitled
Abstract: No abstract text available
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO
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BUX10
O-204AA)
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL NPN TRANSISTOR 2N4913 • Low Collector Saturation Voltage. • Hermetic TO3 Metal Package. • Designed For General Purpose, Switching and Power Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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2N4913
O-204AA)
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