TFH85P330RJE
Abstract: 10R2 400M TFH85P15R0JE
Text: TFH Series 85 Watt TO264 Package Thick Film Power 0.79" 20.07mm P style (standard) 0.20" (5.08mm) M style (optional) 0.25" (6.35mm) 1.03" (26.16mm) FEATURES SPECIFICATIONS • 85 Watt power rating at 25°C case temperature • Non-inductive performance • Low thermal resistance
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-STD-202,
MIL-STD-202,
TFH85M10R0JE
TFH85M24R0JE
TFH85M33R0JE
TFH85M51R0JE
TFH85M100RJE
TFH85M150RJE
TFH85M470RJE
TFH85P330RJE
10R2
400M
TFH85P15R0JE
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AN569
Abstract: NTY100N10 NTY100N10G V15020
Text: NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package http://onsemi.com Features 123 A, 100 V 9 mW @ VGS = 10 V Typ • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode
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NTY100N10
NTY100N10/D
AN569
NTY100N10
NTY100N10G
V15020
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ON semiconductor 340g
Abstract: No abstract text available
Text: NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • 123 A, 100 V 9 mW @ VGS = 10 V TYP Fast Recovery Diode
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NTY100N10
NTY100N10/D
ON semiconductor 340g
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AN569
Abstract: NTY100N10 ON semiconductor 340g
Text: NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package http://onsemi.com Features • Source-to-Drain Diode Recovery Time Comparable to a Discrete 123 A, 100 V 9 mW @ VGS = 10 V TYP Fast Recovery Diode • Avalanche Energy Specified
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NTY100N10
r14525
NTY100N10/D
AN569
NTY100N10
ON semiconductor 340g
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Untitled
Abstract: No abstract text available
Text: NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N-Channel Enhancement-Mode TO264 Package http://onsemi.com Features 123 A, 100 V 9 mW @ VGS = 10 V TYP • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Avalanche Energy Specified
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NTY100N10
0E-03
0E-02
0E-05
0E-04
0E-01
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Untitled
Abstract: No abstract text available
Text: MA03D Series Universal input voltage Isolated & Regulated single output AC-DC Converter PRODUCT FEATURES Compact, light Weight Universal input voltage via same terminals Wide input voltage range : 85 to264VAC(120 to370VDC) Efficiency up to 73% o o Operating temperature :-20 C to+85 C
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MA03D
to264VAC
to370VDC)
40-150kHz
000Hours
MA03D-00B03
MA03D-00B05
MA03D-00B09
MA03D
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Untitled
Abstract: No abstract text available
Text: NTY100N10 Preferred Device Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package http://onsemi.com Features 123 A, 100 V 9 mW @ VGS = 10 V Typ • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode
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NTY100N10
NTY100N10/D
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SIL-PAD 1000 TO 247
Abstract: Tgon 800 SIL-PAD to-264 C1260-40 C126 C264-058 SIL-PAD density TO220 land pattern "Tgon 800" TO220 SMALL heatsink
Text: HEATSINK C Series TO-126, TO-247, TO-220 and TO-264 Package Heatsinks Ohmite introduces the C series Pat. Pending . This series offers high performance, low cost and a compact heat sink with an integrated camming clip system for TO-126, TO-220, TO-247 and TO-264
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O-126,
O-220,
O-247
O-264
C247-025
C247-050
C247-075
C264-030
C264-058
C264-085
SIL-PAD 1000 TO 247
Tgon 800
SIL-PAD to-264
C1260-40
C126
SIL-PAD density
TO220 land pattern
"Tgon 800"
TO220 SMALL heatsink
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MA1012
Abstract: MA-302-55E 6063T5 Tgon 800 MV301 SIL-PAD density a366
Text: HEATSINK Heatsink with clips for TO-264 and TO-247 F e at u r e s Ohmite introduces the M series, patented Pat. No. 7,151,669 , high performance, low cost, configurable, scalable and compact heat sink with matrix clip system for TO-247 and TO-264 packages. This powerful heat sink provides the easiest assembly, largest
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O-247
O-264
resV-302-55E
MA-302-55E
MA-301-27E
MA-301-27E
MV-102-55E
MA-102-55E
MV-101-27E
MA-101-27E
MA1012
6063T5
Tgon 800
MV301
SIL-PAD density
a366
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34N80
Abstract: IXFN34N80 ixfx34n80
Text: HiPerFETTM Power MOSFETs IXFK 34N80 IXFX 34N80 VDSS ID25 RDS on Single MOSFET Die = 800 V = 34 A = 0.24 W trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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34N80
247TM
34N80
IXFN34N80
ixfx34n80
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50n60b
Abstract: 50n60 50N6 IXGH50N60B
Text: HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 = 600 = 75 = 2.3 VCE sat tfi(typ) = 120 V A V ns TO-247 AD (IXGH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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50N60B
O-247
O-247AD
728B1
50n60b
50n60
50N6
IXGH50N60B
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73N30
Abstract: "SOT-227 B" dimensions SOT-227 Package ixfk73n30
Text: HiPerFETTM Power MOSFETs V DSS IXFK 73 N 30 IXFN 73 N 30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 RDS on 45 mΩ Ω Ω 45 mΩ 300 V 73 A 300 V 73 A trr ≤ 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK
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O-264
73N30
"SOT-227 B" dimensions
SOT-227 Package
ixfk73n30
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A1270
Abstract: 55C160 APT84M50B2 APT84M50L MIC4452
Text: APT84M50B2 APT84M50L 500V, 84A, 0.065Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT84M50B2
APT84M50L
O-264
O-247
A1270
55C160
APT84M50B2
APT84M50L
MIC4452
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Super-247 Package
Abstract: extrusion mounted clip 20N-40N igbt clip Kool pad igbt clip rail
Text: Application Note AN-997 Mounting Guidelines for the Super-247 By Andrew Sawle and Arthur Woodworth Table of Contents Page Introduction .1 A Breakdown of System Thermal Resistance .1
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AN-997
Super-247TM
SUPER-247
Super-247 Package
extrusion mounted clip
20N-40N
igbt clip
Kool pad
igbt clip rail
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weight TO-264
Abstract: No abstract text available
Text: Advance Technical Information IXTK 250N10 High Current MegaMOSTMFET VDSS ID25 = 100 V = 250 A Ω = 5 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 100
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250N10
728B1
123B1
728B1
065B1
weight TO-264
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60N25
Abstract: D2560 UPS SIEMENS
Text: Advance Technical Information IXTH 60N25 Standard Power MOSFET VDSS = 250 V ID cont = 60 A Ω RDS(on) = 46 mΩ N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250
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60N25
728B1
123B1
728B1
065B1
60N25
D2560
UPS SIEMENS
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IXTK80N25
Abstract: 80N25 megamos
Text: IXTK 80N25 High Current MegaMOSTM FET VDSS ID25 = 250 V = 80 A Ω = 33 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS
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80N25
IXTK80N25
80N25
megamos
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APT8014L2FLL
Abstract: MAX7238
Text: APT8014L2FLL 800V 52A 0.140Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8014L2FLL
O-264
O-264
APT8014L2FLL
MAX7238
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62n25
Abstract: 62n25 mosfet 62n2 247TM
Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFX 62N25 IXFK 62N25 VDSS ID25 RDS on Single MOSFET Die trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient
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62N25
247TM
O-264
728B1
62n25
62n25 mosfet
62n2
247TM
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APT23F60B
Abstract: APT23F60S MIC4452
Text: APT23F60B APT23F60S 600V, 24A, 0.29Ω Max, trr ≤220ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT23F60B
APT23F60S
220ns
APT23F60B
APT23F60S
MIC4452
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APT8024B2VFR
Abstract: APT8024B2VR APT8024LVR
Text: APT8024B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8024B2VR
APT8024LVR
O-264
O-264
APT8024B2VFR
O-247
APT8024B2VR
APT8024LVR
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APT56M50B2
Abstract: APT56M50L MIC4452
Text: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT56M50B2
APT56M50L
O-264
O-247
APT56M50B2
APT56M50L
MIC4452
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110N30
Abstract: No abstract text available
Text: Advance Technical Information IXTK 110N30 High Current MegaMOSTMFET VDSS ID25 = 300 V = 110 A Ω = 26 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ
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110N30
728B1
123B1
728B1
065B1
110N30
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IRM-38
Abstract: 100N20 106N20 IXFK90N20 90N20 IXFN100N20 IXFN106N20
Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS on 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns 23 mW 23 mW 20 mW TO-264 AA Symbol Test Conditions Maximum Ratings
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O-264
90N20
100N20
106N20
IXFN90N20
IXFN106N20
IRM-38
106N20
IXFK90N20
IXFN100N20
IXFN106N20
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