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    TO23 Search Results

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    TO23 Price and Stock

    Bivar Inc TO-23-250

    SPACER TUBULAR GEN PURP 0.250"
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    DigiKey TO-23-250 Bag 16,968 1
    • 1 $0.35
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    Verical TO-23-250 305 55
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    Arrow Electronics TO-23-250 305 2 Weeks 1
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    RS TO-23-250 Bulk 1,000
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    Bivar Inc TO-23-050

    SPACER TUBULAR GEN PURP 0.050"
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    DigiKey TO-23-050 Bag 1,009 1
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    Mouser Electronics TO-23-050 9,628
    • 1 $0.26
    • 10 $0.18
    • 100 $0.12
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    Schmalztech LLC ST-PROTO-2-3

    BREADBOARD GENERAL PURPOSE PTH
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    DigiKey ST-PROTO-2-3 Bag 141 1
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    Schneider Electric HMIGTO2310

    HMIGTO2310 - ADVANCED TOUCHSCREE
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    DigiKey HMIGTO2310 Box 2 1
    • 1 $2348.37
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    Newark HMIGTO2310 Bulk 1 1
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    RS HMIGTO2310 Bulk 2 7 Weeks 1
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    Schneider Electric HMIGTO2300

    ADVANCED TOUCHSCREEN PANEL, HARM
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    DigiKey HMIGTO2300 Box 2 1
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    Mouser Electronics HMIGTO2300 3
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    Newark HMIGTO2300 Bulk 1
    • 1 $2305.02
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    RS HMIGTO2300 Bulk 2 1 Weeks 1
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    TO23 Datasheets (46)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TO2301510000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 23P SIDE ENTRY 5MM PCB Original PDF
    TO2301520000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 23P SIDE ENTRY 5MM PCB Original PDF
    TO-23-040 Bivar Wash-Away Spacers - Wash-Away Component and General Purpose Spacers Original PDF
    TO-23-040 Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-23-040E Bivar Wash-Away Spacers - Wash-Away Component and General Purpose Spacers Original PDF
    TO-23-040E Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-23-050 Bivar Wash-Away Spacers - Wash-Away Component and General Purpose Spacers Original PDF
    TO-23-050 Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-23-055 Bivar Wash-Away Spacers - Wash-Away Component and General Purpose Spacers Original PDF
    TO-23-055 Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-23-060 Bivar Wash-Away Spacers - Wash-Away Component and General Purpose Spacers Original PDF
    TO-23-060 Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-23-060E Bivar Wash-Away Spacers - Wash-Away Component and General Purpose Spacers Original PDF
    TO-23-060E Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-23-070 Bivar Wash-Away Spacers - Wash-Away Component and General Purpose Spacers Original PDF
    TO-23-070 Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-23-070E Bivar Wash-Away Spacers - Wash-Away Component and General Purpose Spacers Original PDF
    TO-23-070E Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF
    TO-23-090E Bivar Wash-Away Spacers - Wash-Away Component and General Purpose Spacers Original PDF
    TO-23-090E Bivar Component Insulators, Mounts, Spacers, Hardware, Fasteners, Accessories, SPACER WASHAWAY Original PDF

    TO23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    L30ESDL5V0C3-2

    Abstract: Diode LT n5 LT n5 ltn5 340W L30ESDL5
    Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small


    Original
    PDF L30ESDL5V0C3-2 L30ESDL5V0C3-2 O236AB) Diode LT n5 LT n5 ltn5 340W L30ESDL5

    ltn5

    Abstract: L30ESDL5V0 Diode LT n5 LT n5
    Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small


    Original
    PDF L30ESDL5V0C3-2 L30ESDL5V0C3-2 O236AB) ltn5 L30ESDL5V0 Diode LT n5 LT n5

    ltn5

    Abstract: Diode LT n5 L30ESDL5V0
    Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small


    Original
    PDF L30ESDL5V0C3-2 L30ESDL5V0C3-2 O236AB) ltn5 Diode LT n5 L30ESDL5V0

    4T SOT 23

    Abstract: MMBD301 SOT23 JEDEC standard orientation
    Text: DISCRETE POWER AND SIGNAL TECHNOLOGIES MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4T SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted


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    PDF MMBD301 OT-23 O-236AB O236AB 4T SOT 23 MMBD301 SOT23 JEDEC standard orientation

    Untitled

    Abstract: No abstract text available
    Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small


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    PDF L30ESDL5V0C3-2 L30ESDL5V0C3-2 O236AB)

    to236ab

    Abstract: MMBD301
    Text: MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4TF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature


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    PDF MMBD301 OT-23 O-236AB O236AB to236ab MMBD301

    Diode LT n5

    Abstract: GSOT-23 L30ESDL5V0C3-2 12-Peakpulse
    Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small


    Original
    PDF L30ESDL5V0C3-2 L30ESDL5V0C3-2 O236AB) Diode LT n5 GSOT-23 12-Peakpulse

    L30ESDL5V0C3-2

    Abstract: Diode LT n5 L30ESD
    Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE- 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small


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    PDF L30ESDL5V0C3-2 L30ESDL5V0C3-2 O236AB) Diode LT n5 L30ESD

    NPN Transistor VCEO 80V 100V

    Abstract: NTE24 NTE25
    Text: NTE24 NPN & NTE25 (PNP) Silicon Complementary Transistors General Purpose Amplifier, Switch Description: The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package designed for general purpose medium power amplifier and switching circuits that require collector currents to 1A.


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    PDF NTE24 NTE25 500mA, 1000mA, 100mA 1000mA 200mA, 100MHz NPN Transistor VCEO 80V 100V NTE24 NTE25

    L30ESDL5V0C3-2

    Abstract: 3-40W
    Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small


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    PDF L30ESDL5V0C3-2 L30ESDL5V0C3-2 O236AB) 3-40W

    CIL9263

    Abstract: TRANSISTOR K 135 J 50
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CIL9263 TO237 BCE High Voltage Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Base Voltage Collector -Emitter Voltage Emitter Base Voltage


    Original
    PDF ISO/TS16949 CIL9263 C-120 CIL9263 TRANSISTOR K 135 J 50

    MMBD701

    Abstract: No abstract text available
    Text: MMBD701 CONNECTION DIAGRAM 3 3 PACKAGE 5HF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GE Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature


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    PDF MMBD701 OT-23 O-236AB O236AB MMBD701

    MMBD701

    Abstract: D0 sot23 A0 SOT23 FS PKG CODE 49
    Text: MMBD701 CONNECTION DIAGRAM 3 3 PACKAGE 5HF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GE Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature


    Original
    PDF MMBD701 OT-23 O-236AB O236AB MMBD701 D0 sot23 A0 SOT23 FS PKG CODE 49

    SOT23 JEDEC standard orientation

    Abstract: SOT-23 4TF MMBD301
    Text: MMBD301 CONNECTION DIAGRAM 3 3 PACKAGE 4TF SOT-23 TO-236AB Low 2 NC 1 1 2 PACKAGE SOT-23 TO236AB Schottky Barrier Diode Sourced from Process GD Absolute Maximum Ratings* Sym Tstg TJ Wiv PF TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature


    Original
    PDF MMBD301 OT-23 O-236AB O236AB SOT23 JEDEC standard orientation SOT-23 4TF MMBD301

    2410m

    Abstract: 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002
    Text: Tem ic S e m i c o n d u c t o r s ^ S08 < > ^ T052 T0220 ^ TO237 T092 2 lead T092 (3 lead) Low-Power Discretes I I % DMOS FETs - Low-Power MOS N-Channel Enhancement-Mode I , Pm Number 14-Pin Sidebraze (P) and Plastic (J) i- V Q 1001J 30 V Q 1001P • ■


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    PDF T0220 14-Pin 1001P 1001J 1004J 1004P L000J 1000P 1006P T0236 2410m 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002

    Untitled

    Abstract: No abstract text available
    Text: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)


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    PDF T0220 14-Pin VQ2001J VQ200IP VQ2004J T0236 TP0101T TP0202T TP06I0T VP06I0T

    Untitled

    Abstract: No abstract text available
    Text: T0-228/TO232 Wideband RF/Pulse Transformers .25-200 MHzZ.5-100 MHz VML GUARANTEED MINIMUM PERFORMANCE DATA TYPICAL PERFORMANCE SPECIFICATIONS FOR MODEL TO-228 Type 50 ohm unbalanced 200 ohm balanced symm. DC Isolated C.T. - 1 dB Bandwidth, MHz 25-200 Midband insertion loss dB


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    PDF T0-228/TO232 O-228 O-232 MIL-T-55631. B162-58T MILG-45204.

    Untitled

    Abstract: No abstract text available
    Text: T0-228/TO232 Wideband RF/Pulse Transformers .25-200 MHz/.5-100 MHz GUARANTEED MINIMUM PERFORMANCE DATA TYPICAL PERFORMANCE SPECIFICATIONS FOR MODEL TO-228 Type 50 ohm unbalanced 200 ohm balanced symm. DC Isolated C.T - 1 dB Bandwidth. MHz Midband insertion loss dB


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    PDF T0-228/TO232 O-228 O-232 MIL-STD-202E. MIL-STD-202E

    TO228

    Abstract: 107D 204C 213B
    Text: T0-228/TO232 Wideband RF/Pulse Transformers .25-200 MHz/,5-100 MHz VÆBL TYPICAL PER FO R M A NC E SPECIFICATIONS FOR MODEL TO-228 Type: 50 ohm unbalanced 200 ohm balanced symm. DC Isolated C.T TO-228 - 1 dB Bandwidth. MHz .25-200 Midband insertion loss dB


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    PDF O-228/TO-232 MIL-T-55631. O-228 MIL-STD-202E O-232 F-15-68 B162-58T MIL-G-45204. 00-N-290 TO228 107D 204C 213B

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS h0.5 High DC Current Gain : hpg (i) = 100~320 Low Saturation Voltage : VcE(sat) = 0.4 V (Max.)


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    PDF 2SC3265 2SA1298 O-236MOD SC-59CEO

    2SC3340

    Abstract: 2SA1324 2SC3339 2SC3426
    Text: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage


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    PDF O-236 /SOT-23 2SA1162 15NEW) 2SC2532 2SC2714 2SC2715 2SC2716 2SC2996 2SC3340 2SA1324 2SC3339 2SC3426

    Untitled

    Abstract: No abstract text available
    Text: 1SS294 TO SHIBA TO SHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59


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    PDF 1SS294 SS294 SC-59 O-236MOD SC-59

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5-0.3 • Low Forward Voltage : V p 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I o = 0.5A (Max.)


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    PDF 1SS344 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: 1SS336 T O SH IB A 1SS336 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. + 0 .5 2 .5 - 0 . 3 : SC-59 : Vp 3 = 0.84V (Typ.) : trr = 7ns (Typ.) : Or = 7pF (Typ.) + 0 .2 5 1 .5 - 0 . 1 5 , 0 .9 5 Small Package


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    PDF 1SS336 SC-59