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    TO128 PACKAGE Search Results

    TO128 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    TO128 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    lcd driver

    Abstract: NJU6437 NJU6438 160-Segment Philips cog lcd cog
    Text: Segment Drivers Segment Driver 33 1/4 Duty LCD Driver 1/4 Duty I2C-Bus LCD Driver NJU6437 NJU6438 DATA SHEET DATA SHEET • GENERAL DESCRIPTION ■ GENERAL DESCRIPTION The NJU6437 is a 1/4 duty LCD driver for segment type LCD panel. The LCD driver consists of 4-common and 32-segment drivers up to128-segment totally.


    Original     		NJU6437 NJU6438 NJU6438 40-segment 160-segment 32-segment NJU6437 to128-segment lcd driver Philips cog lcd cog PDF

    DMS-1u

    Abstract: 100-Pair 8x25 50-PIN bifurcated DMS-100 A0355744 130-A4128W011 130-A4128L011 DMS-100 temperature 50PIN
    Text: Features • Maximum configuration: 128 pairs 8 x 32 ■ Hinged front cover to safeguard personnel and cross-connections ■ Rotates 180 ° and locks into place for convenient front access to equipment terminations ■ Bifurcated quick-clip insulation displacement


    Original     		50-pin QBB66QN8X25 QBB66QN5X40 QBB66QP5X40F4-00 A0390886 A0330673 A0410440 100-pair DMS-1u 8x25 50-PIN bifurcated DMS-100 A0355744 130-A4128W011 130-A4128L011 DMS-100 temperature 50PIN PDF

    M41T256Y

    Abstract: squarewave generator generator 1 hz NVRAM Digital alarm clock ic with 28 pin rtc with internal backup battery M41ST84 M41ST95 M41T00S M41T56
    Text: Serial real-time clocks Accurate timekeeping and ultralow power in compact packages February 2006 www.st.co m/rtc STMicroelectronics real-time clock spectrum • High Integration RTCs ■ ■ Industry Standard RTCs ■ M41T6x Series ■ ■ Low standby current


    Original     		M41T6x M41T81S M41T00S M41T56 M41T11 M41ST95 M41T94 M41ST85 M41ST84 M41T256 M41T256Y squarewave generator generator 1 hz NVRAM Digital alarm clock ic with 28 pin rtc with internal backup battery M41ST84 M41ST95 M41T00S M41T56 PDF

    SOT423

    Abstract: STI665 2S0869 TO247 package PT9795 OTS403 2S01397 trw rf
    Text: POWER SILICON NPN Item Number Part Number I C 10 - ~t~g~ 15 20 SOT403 SOT403 STS409 OTS3705B OTS423 OTS663 IR663 SOT423 ~';'~:i3 25 30 SPC423M SPC425 STS423 2SC1875 2SC1170 2SC1893 2SC1170B 2SC1170B gt~~~ 35 40 OTS665 IR665 PTC424 PTC424P (A) PTC425 PTC425P (A)


    Original     		OTS402 OTS403 FT402 OT402 SMS01272 2SC2285AK MRF475 SOT423 STI665 2S0869 TO247 package PT9795 2S01397 trw rf PDF

    TO-129

    Abstract: 2N4933 TO128 PACKAGE 2N5687 TO-128
    Text: Typ type f MHz Vcc P¡n Pout 2N 3137 T 2N 3309 2N 3375 250 50 250 400 20 50 25 28 0,1 2 0,4 1 0,4 15 2 3 2N 2N 2N 2N 3553 3632 3733 3866 175 175 400 400 28 28 28 28 0,25 3,5 4,0 0,1 2N 2N 2N 2N 3924 3926 3927 4040 175 175 175 400 13,6 13,6 13,6 28 2N 2N 2N


    OCR Scan     		O-117 O-129 O-128 O-131 TO-129 2N4933 TO128 PACKAGE 2N5687 TO-128 PDF

    TO128 PACKAGE

    Abstract: la 4127 t 3866 power transistor LA 4440 IC 2n4127 2n5102 2N4040 2N4041 2N5711 2n4428
    Text: 2N5708 SIL IC O N NPN VH F POWER T R A N S IST O R mechanical specification absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e . 70 V


    OCR Scan     		2N5708 O-128 O-128 O-117 O-131 O-129 TO128 PACKAGE la 4127 t 3866 power transistor LA 4440 IC 2n4127 2n5102 2N4040 2N4041 2N5711 2n4428 PDF

    BD NPN transistors

    Abstract: BD 139 140 BD - 100 V BD139-6 BD139 bd 139 package BD244 BD249 BDX15 Tc Bd 139
    Text: Typ type f MHz vcc 2N 2N 2N 2N 150 400 400 50 13 28 26 12,5 5713 5773 5774 5848 Pout bvcbo bvceo Gehause package 3,4 0,12 1 3,25 11 1,5 8 20 60 65 65 48 40 35 35 24 TO-128 TO-117 TO-129 145 v CEO mm V 'CD max A mm hpE max 45 60 80 1 1 1 40 40 40 250 160 160


    OCR Scan     		O-128 O-117 O-129 BD NPN transistors BD 139 140 BD - 100 V BD139-6 BD139 bd 139 package BD244 BD249 BDX15 Tc Bd 139 PDF

    2N6197

    Abstract: rf power transistors 2N3924 2N2876 2N4127 2N4073 2N6198 2N5698 MT 59 2N5687
    Text: 61 RF POWER TRANSISTORS TYPE NUM BER O P E R A T IN G FR EQ U EN CY MHz MIN. POWER O U TPU T (W ATTS) MIN. POW ER G A IN (dB) 30-80 MHz RF POWER TRANSISTORS V CC (V O LT S) PACKAGE TYPE 2N5687 2N5847 2N5689 50 50 50 1.5 8 10 12 10 10 12.5 12.5 12.5 TO-39


    OCR Scan     		2N5687 2N5847 MT-72 2N5689 O-117 2N4932 2N5993 2N4933 2N6197 rf power transistors 2N3924 2N2876 2N4127 2N4073 2N6198 2N5698 MT 59 PDF

    bd 3055

    Abstract: BD 139 140 BD NPN transistors BDX 241 BD139-6 2N3055 BD139 3055 npn BD 139 N to128
    Text: Typ type f MHz vcc 2N 2N 2N 2N 150 400 400 50 13 28 26 12,5 5713 5773 5774 5848 Pout bvcbo bvceo Gehause package 3,4 0,12 1 3,25 11 1,5 8 20 60 65 65 48 40 35 35 24 TO-128 TO-117 TO-129 145 v CEO mm V 'CD max A mm hpE max 45 60 80 1 1 1 40 40 40 250 160 160


    OCR Scan     		O-128 O-117 O-129 40PEP 80PEP OT-32 OT-32 O-66P bd 3055 BD 139 140 BD NPN transistors BDX 241 BD139-6 2N3055 BD139 3055 npn BD 139 N to128 PDF

    Untitled

    Abstract: No abstract text available
    Text: X * EX4R XR-T56189 T1/CEPT High Speed Jitter Attenuator G E N E R A L DESCRIPTION PIN ASSIGNM ENT The function of the XR-T56189 is to attenuate the incomming jitter of clock and data. To do this, two buffers of 128 bits depth and a crystal oscillating at the receiver clock frequency are needed.


    OCR Scan     		XR-T56189 XR-T56189 to128 DS2188 10sec XR-T56188CP XR-T56188IP XR-T56188CD XR-T56188ID PDF

    2N5070

    Abstract: LA 4440 IC t 3866 power transistor 32-NF-2A-Thread LA 4127 2N3927 to60 2N5026 TO128 PACKAGE c 3866 transistor
    Text: 2N5070 SIL IC O N NPN V H F POWER T R A N S IST O R Emitter Internally Grounded to Case Intermodulation Distortion Better than 30 dB at 25 W P.E.P Emitter Resistor Stabilised mechanical specification absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e . 65 V


    OCR Scan     		2N5070 10/32-NF-2A-Thread O-117 O-128 O-131 O-129 2N5070 LA 4440 IC t 3866 power transistor 32-NF-2A-Thread LA 4127 2N3927 to60 2N5026 TO128 PACKAGE c 3866 transistor PDF

    2N3632

    Abstract: LA 4127 LA 4440 IC transistor d 5702 e d 5703 2N5102 Effio ic 4440 2N4431 136 2n 2N3927
    Text: 2N3632 SILICO N NPN VHF POWER TRANSISTO R Distributed Wafer Interdigitai Construction Integrated Diffused Emitter Ballast mechanical data Pins 1,15 " 10/32-NF-2AThread All dimensions are in mm TO-60 * absolute maximum ratings Tease - 25 °C Collector-Base V o lt a g e .


    OCR Scan     		2N3632 10/32-NF-2A-Thread O-117 O-128 O-131 O-129 2N3632 LA 4127 LA 4440 IC transistor d 5702 e d 5703 2N5102 Effio ic 4440 2N4431 136 2n 2N3927 PDF

    TO128 PACKAGE

    Abstract: xr-t56189
    Text: EX4R XR-T56189 T1/CEPT High Speed Jitter Attenuator PIN ASSIGNMENT GENERAL DESCRIPTION 2 The function of the XR-T56189 is to attenuate the incomming jitter of clock and data. To do this, two buffers of 128 bits depth and a crystal oscillating at the receiver clock frequency are needed.


    OCR Scan     		XR-T56189 XR-T56189 to128 DS2188 10sec XR-T56188CP XR-T56188IP XR-T56188CD XR-T56188ID TO128 PACKAGE PDF

    LA 4440 IC

    Abstract: LA 4127 IC LA 4127 2N5109 ic la 4440 t 3866 power transistor 2N3927 2N5687 2n5090 2N3375
    Text: 2N5109 SIL IC O N NPN VH F POWER T R A N SIST O R • • • • • Ideal for C A T V Applications Minimum Gain-Bandwidth Product 1.2 GHz 11 dB at 200 MHz Low Distortion Low Noise mechanical data Collector-Base V o lt a g e . 40 V


    OCR Scan     		2N5109 LINEARIT20 O-117 O-128 O-131 O-129 LA 4440 IC LA 4127 IC LA 4127 2N5109 ic la 4440 t 3866 power transistor 2N3927 2N5687 2n5090 2N3375 PDF

    2N3375

    Abstract: Transistor 2n3375 2n5708 transistor 3866 s 2N3927 2n4440 texas rf power transistor 2n RF transistor TO128 PACKAGE 2N5690
    Text: 2N3375 SILICON NPN VHF POWER TRANSISTOR Distributed Wafer Interdigital Construction Integrated Diffused Em itter Ballast mechanical data All d im e n s io n s a re in m m TO-60 * absolute maximum ratings at 25 ° C case temperature unless otherwise noted


    OCR Scan     		2N3375 10/32-NF-2A-Thread O-117 O-128 O-131 O-129 2N3375 Transistor 2n3375 2n5708 transistor 3866 s 2N3927 2n4440 texas rf power transistor 2n RF transistor TO128 PACKAGE 2N5690 PDF

    t 3866 power transistor

    Abstract: transistor 3866 s transistor d 5702 e d 5703 transistor t 3866 t 3866 transistor 2N3866 3866 transistor transistor 3866 2N3866 RF output Design 5698 transistor
    Text: 2N3866 SIL IC O N NPN V H F POWER T R A N S IST O R V H F /U H F M E D IU M POW ER A M P L IF IE R • • 1 W at 400 MHz with 10 dB Gain Distributed Construction mechanical specification All d im e n s io n s a re in rnm TO-39 absolute maximum ratings Tease = 25 °C


    OCR Scan     		2N3866 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor transistor 3866 s transistor d 5702 e d 5703 transistor t 3866 t 3866 transistor 2N3866 3866 transistor transistor 3866 2N3866 RF output Design 5698 transistor PDF

    MJE350 equivalent

    Abstract: No abstract text available
    Text: SAMSUNG S E M IC O N D U C T O R MJE350 INC IM E D J 7 ^ 4 :1 ,4 2 00077Q5 1 PNP EPITAXIAL SILICON TRANSISTOR T HIGH COLLECTOR-EMITtER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER " 1 3 ~ i< f TO-128 Complementary to MJE340


    OCR Scan     		MJE350 00077Q5 O-128 MJE340 GQG77fe MJE350 equivalent PDF

    transistor BD 246

    Abstract: transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 transistor BD245 BD135 transistor BD 241
    Text: BDI 36 PNP EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD135 • • • • • • • Driver Stages Active Convergence Control Circuits Switching Application Ptot * 6.5 Wat TC * 60 <>c hpE > 40 at lc = —150 mA Vce sat < 0.5 V at lc “ - 0.5 A


    OCR Scan     		BD136 BD135 MIL-STD-750. OT-32 40PEP 80PEP OT-32 O-66P transistor BD 246 transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 transistor BD245 BD135 transistor BD 241 PDF

    transistor BD 246

    Abstract: transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments
    Text: BD135 NPN EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD136 • • • • Driver Stages Active Convergence Control Circuits Switching Application • • • Ptot = 6.5 W at T c = 60 °C hpE > 40 at lc = 150 mA VcE satl < 0.5 V at lc = 0.5 A


    OCR Scan     		BD135 BD136 STD-750. OT-32 40PEP 80PEP OT-32 O-66P transistor BD 246 transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments PDF

    BD139

    Abstract: transistor BD 139 BD 139 transistor BD139-6 BD 139 N BD 139-16 transistor bd 242 bd 3055 BD139 amplifier BD NPN transistors
    Text: BD 139 NPIM-EPITAXIAL-PLANAR-SILICON-TRANSISTOR • • • • • Driver fo r Audio A m plifier Active Convergenz Regulators Power Switching Pt o t = 6.5 W at T g = 60 oc • hFE > 40 at !C = - 1 5 0 mA • VcE sat < - 0 .5 V at lc = - 0 .5 A mechanical data


    OCR Scan     		BD139 40PEP 80PEP OT-32 OT-32 O-66P BD139 transistor BD 139 BD 139 transistor BD139-6 BD 139 N BD 139-16 transistor bd 242 bd 3055 BD139 amplifier BD NPN transistors PDF

    BD 139 transistor

    Abstract: BD 140 transistor bd 3055 transistor BD 140 transistor bd 242 BD139-6 TRANSISTOR Bd 137 transistor BD 249 transistor BD 139 BD140
    Text: BD140 PNP E P IT A X IA L - P L A N A R - S IL IC O N - T R A N S IS T O R • • • • • • • Driver for Audio Amplifier Active Convergenz Regulators Power Switching Ptot = 6.5 W at T q * 60 °C hpE > 40 at lc = 150 mA VcE sat < 0-5 V at lc = 0.5 A


    OCR Scan     		BD140 sot-32 40PEP 80PEP OT-32 OT-32 O-66P BD 139 transistor BD 140 transistor bd 3055 transistor BD 140 transistor bd 242 BD139-6 TRANSISTOR Bd 137 transistor BD 249 transistor BD 139 BD140 PDF

    transistor bd 139

    Abstract: transistor BD 140 transistor bd 242 transistor bd 138 BD139 transistor BD 240 transistor BD 246 BD 139 140 TRANSISTOR BD 137 transistor BD245
    Text: BD138 PNP E P IT A X IA L P L A N A R S IL IC O N TR A N S IS TO R 1 1 7 1 D ESIGN ED FO R CO M PLEM EN TARY USE WITH BD137


    OCR Scan     		BD138 BD137 MIL-STD-750. OT-32 OT-32 40PEP 80PEP transistor bd 139 transistor BD 140 transistor bd 242 transistor bd 138 BD139 transistor BD 240 transistor BD 246 BD 139 140 TRANSISTOR BD 137 transistor BD245 PDF

    transistor BD 246

    Abstract: transistor BD 240 B0239 mj 3055 npn BD239 TEXAS INSTRUMENTS BDX 625 transistor mj 3055 transistor bd 242 operation of BD 139 transistor bd 138
    Text: BD239, BD239A, BD239B, BD239C FOR POWER AM PLIFIER AN D HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD240A-C 30 W at 25 °C Case Temperature 2 A Rated Collector Current M in f T o f 3 MHz at 10 V , 200 mA mechanical data absolute maximum ratings at 25 °C case temperature unless otherwise noted


    OCR Scan     		BD239, BD239A, BD239B, BD239C BD240A-C BD239 BD239A BD239B 40PEP transistor BD 246 transistor BD 240 B0239 mj 3055 npn BD239 TEXAS INSTRUMENTS BDX 625 transistor mj 3055 transistor bd 242 operation of BD 139 transistor bd 138 PDF

    BDX 241

    Abstract: TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137
    Text: BDI 37 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR 117 1 D E S I G N E D F O R C O M P L E M E N T A R Y U S E W ITH B D 138 • Driver Stages • A ctive Convergence • C ontrol Circuits • Sw itching Application • Ptot = 6.5 W at T c = 60 ° C • hFE > 40 at lc = 150 m A


    OCR Scan     		BD137 BD138 MIL-STD-750. OT-32 OT-32 40PEP 80PEP BDX 241 TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137 PDF