TO-94 TRANSISTOR Search Results

2n3391a

Contextual Info: NPN Transistors bSDllBD uctor Discrete POWER & Signal Technologies " NPN General Purpose Amplifiers and Switches OOHÜMbl 2fil I to Device No. Case Style 2N3390 VCBO V CEO ^EBO V Min (V) Min (V) Min TO-92 (94) 25 25 2N3391A TO-92 (94) 25 2N3392 TO-92 (94)

ST3904

Abstract: NS3903 TIS92 2N2926 NS3904 2n2926 ses 2N915 MPQ3904 2N3694 2N2712
Contextual Info: NPN Transistors Case Style Vcbo V Min vCEO (V) Min Vebo (V) Min 2N2712 TO-92 (94) 1B 18 2N2714 TO-92 (94) 18 2N2923 TO-92 (94) 2N2924 VCE(SAT) VBE(SAT) A m p lifie r s . C0b (PF) Max a n d S w itc h e s toff (ns) Max NF (dB) Max Test Conditions Process No.

NPN 2N3391A

Abstract: 2N3702 NATIONAL SEMICONDUCTOR PS6514
Contextual Info: N IMAIL SEPIICOND -[DISCRETE tflE D • b5D113Q Q03TSE3 b?t. ■ Devices Volts Min 25 (mA) Max Min Max 2N3391A 100 250 500 2N3392 100 150 300 NPN ra p fllA NF (dB) Max 2.0 120 Typ. 2.0 5.0 T0-92(94) 360 2.0 120 Typ. 2.0 TO-92(94) 360 120 Typ. 2.0 TO-92(94)

2N5306 NATIONAL SEMICONDUCTOR

Abstract: NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A
Contextual Info: This NPN Transistors v EBO V Min Ic e s ' 'CBO a (jiA) Max Its Case Style 2N5305 TO-92 (94) 0.1 2N5306 TO-92 (94) 2N5307 *c @ VCE (mA) (V) VCE(SAT) VBE(SAT) . (V) & (V) 0 C Max Min Max ( ) fT (MHz) C0b (pF) Max Min @ lc (mA) Process No. 25 2000 20,000 2

A1019

Abstract: A1019 TRANSISTOR DIODE BUZ 94 BUZ94 TC-130-W
Contextual Info: SIEM ENS SIPMOS Power Transistor BUZ 94 • N channel • Enhancement mode Type v DS h BUZ 94 600 V 7.8 A ^DS on 0.9 Si Package 1> Ordering Code TO-204 AA C67078-A1019-A2 Maximum Ratings Parameter Continuous drain current, Pulsed drain current, Symbol Tc = 27 "C

c732

Abstract: 000M2S4 BCX22 BCX24 BCX94 Q62702-C732 Q62702-C750
Contextual Info: 2SC » • ÛH3SbOS 0004554 T ■ S I E 6 r NPN Silicon AF Transistors - -r-an-ri BCX 22 BCX 24 25C 0 4 7 5 4 0 - B C X 94 SIEMENS AKTIEN6ESELLSCHAF BCX 22, BCX 24, and BCX 94 are epitaxial NPN silicon planar transistors in TO 18 metal

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 94 • N channel • Enhancement mode Type V Ds BUZ 94 600 V /d 7.8 A ^DS on Package 1> Ordering Code 0.9 Q TO-204 AA C67078-A1019-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 27 'C h 7.8 Pulsed drain current, Tc = 25 ”C

9a2 diode

Abstract: JC86
Contextual Info: SIEMENS SIPMOS Power MOS Transistor VDS lD = 600 V = 7.8 A ^ D S o n = 0 -9 BUZ 94 O • N channel • E nhancem ent mode • A valanche-proof • Package: TO -204 AA (T O -3 )') Type Ordering code BUZ 94 C 670 78-A 101 9-A2 Parameter Symbol Values Unit

9a2 diode

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 94 N channel Enhancement m ode Type ^ DS Id ^ D S o n Package 11 Ordering Code BUZ 94 600 V 7.8 A 0.9 n TO-204 AA C67078-A101 9-A2 Maxim um Ratings Parameter Symbol Continuous drain current, Tc = 27 "C Id 7.8 Pulsed drain current, Tc = 25 "C

5962-9054301MQA

Abstract: 5962-9054304MQA qml-38535 smd transistor db2
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with NOR 5962-R218-94. 94-07-20 Monica L. Poelking B Changes in accordance with NOR 5962-R068-95. 95-02-17 Monica L. Poelking C Update boilerplate to MIL-PRF-38535 requirements. - CFS

Contextual Info: Power Transistors Page TO-3 Metal Case 94 TO-66 Metal Case 98 TO-126 Plastic Case 99 TO-202 Plastic Case 101 TO-218 Plastic Case 102 TO-220 Plastic Case 104 TO-237 Plastic Case 107 93

Contextual Info: Power Transistors Page TO-3 Metal Case 94 TO-66 Metal Case 98 TO-126 Plastic Case 99 TO-202 Plastic Case 101 TO-218 Plastic Case 102 TO-220 Plastic Case 104 TO-237 Plastic Case 107 93

SMD TRANSISTOR MARKING P28

Abstract: SMD transistor MARKING CODE g23 TRANSISTOR SMD MARKING CODE kn SMD MARKING CODE P28 g23 SMD Transistor 5962-8950303GC smd transistor marking G23 5962-8950303PA gu32 SMD TRANSISTOR MARKING jf
Contextual Info: REVISIONS LTR D DESCRIPTION DATE YR-MO-DA APPROVED Add device type 05. Add vendor CAGE 27014. Make changes to 1.3, 1.4, table I, figures 1 ,3 ,4 , 5, and 6. 93-05-10 M. A. FRYE Changes in accordance with N.O.R. 5962-R053-94. 94-06-24 M. A. FRYE Redrawn with changes. Technical and editorial changes

94B DIODE

Abstract: BDw 32 w94C
Contextual Info: BDW94/A/B/C PNP EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS TO-220 • Complement to BDW93, BDW93A, BDW93B and BDW93C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit BDW 94 BDW 94A BDW 94B

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX949 ISSUE 3 – JUNE 94 FEATURES * 4.5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * Excellent gain up to 20 Amps * Very low leakage * Exceptional gain linearity down to 10mA

ZBD849

Abstract: transistor bf 970
Contextual Info: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 THERMAL CHARACTERISTICS PARAMETER Thermal Resistance Junction To Ambient Junction To Case SYMBOL MAX UNIT Rth j-amb Rth(j-case) 75 7 °C/W °C/W ZBD849 PROVISIONAL DATASHEET ISSUE A – MARCH 94 FEATURES * Fast switching

BFW92

Contextual Info: BFW92 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92 Marking: BFW92 Plastic case TO 50

ztx953

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX953 ISSUE 4 - JU N E 94 - FEATURES * 3.5 Am ps continuous current * Up to 10 Am ps peak current * Very low saturation voltage * Excellent gain up to 10 Am ps * Spice m odel available

lr 3103

Abstract: ER6V
Contextual Info: PNP SILICON PLANAR POWER TRANSISTOR ZBD953 PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * Fast switching * Guaranteed hFE specified up to 4 Amps * Low collector-emitter saturation voltage T0126 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX948 IS S U E 2 - J U N E 94. . . FEATURES * 4.5 A m p s continuous current * U p to 20 A m p s peak current

LB1200

Abstract: T092 ZTX953 LB120
Contextual Info: PNP SILICON PLANAR MEDIUM POWER I HIGH CURRENT TRANSISTOR CorltinUOUs “ LJp to 10 Amps * Very * Excellent * Spice I ZTX953 1 ISSUE 4- JUNE 94 FEATIJRES + ~fj A~ps I ~ current /’ q peak current low saturation voltage gain up to 10 Amps moclel available

BFW92A

Contextual Info: BFW92A Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92A Marking: BFW92A Plastic case TO 50

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX956 ISSUE 3 – JUNE 94 FEATURES * 2 Amps continuous current * Up to 5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 2 Amps * Spice model available C B E E-Line

BFR91A

Abstract: transistor BFR91A apr 241 BFR91A transistor datasheet marking 544 amplifier
Contextual Info: BFR91A Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR91A Marking: BFR91A Plastic case TO 50