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    TO-63 PACKAGE Search Results

    TO-63 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TO-63 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Description: 4107 010016 Packaged part # Bulk part # 1 BU-63-0 (2) BU-63-2 • #010016 Packaged parts • Includes: BU-63-0 (2) BU-63-2 (2) • More details about bulk parts number refer to relative datasheets


    Original     		BU-63-0 BU-63-2 PDF

    PT-8502

    Abstract: MT-1042 pt-9504 2N5928 TO114 1042 TO114 package PPS-250 TO63 package PT-7501
    Text: Click on the underlined number to see specs on the part or package. Please contact the company for more information on other parts and packages. Part Number 70 AMPS PT-7501 PT-7502 PT-7503 PT-7509 PT-3512 Voltage Package 100 120 150 200 325 TO-63 TO-63 TO-63


    Original     		PT-7501 PT-7502 PT-7503 PT-7509 PT-3512 PT-7504 PT-7505 PT-7506 PT-7510 PT-7507 PT-8502 MT-1042 pt-9504 2N5928 TO114 1042 TO114 package PPS-250 TO63 package PT-7501 PDF

    BAR63

    Abstract: Q62702-A1038 a1038 transistor BR diode A1038 BAR63-04 BAR64 Q62702-A1036 Q62702-A1037 Q62702-A1039
    Text: BAR 63. Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type Marking Ordering code tape and reel BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 G3 G4 G5 G6 Q62702-A1036


    Original     		OT-23 Q62702-A1036 Q62702-A1037 Q62702-A1038 Q62702-A1039 BAR63 BAR63-04 BAR63 Q62702-A1038 a1038 transistor BR diode A1038 BAR64 Q62702-A1036 Q62702-A1037 Q62702-A1039 PDF

    Pin diode G4S

    Abstract: SOT-23 2.D
    Text: BAR 63 . Silicon PIN Diodes 3 • PIN diode for high speed switching of RF signals • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63 BAR 63-04 BAR 63-05 1 3 BAR 63-06 3 3 3 1 2 EHA07002 VPS05161 1 2 EHA07005 1


    Original     		EHA07002 VPS05161 EHA07005 EHA07006 EHA07004 OT-23 EHB07145 Pin diode G4S SOT-23 2.D PDF

    450KW

    Abstract: No abstract text available
    Text: BAT 63 Silicon Schottky Diode ● Low barrier diode for mixer and detectors up to GHz frequencies Type BAT 63 Ordering Code tape and reel 1 Q62702-A1004 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package 63 SOT-143 Maximum Ratings Parameter Symbol Values


    Original     		Q62702-A1004 OT-143 450KW PDF

    transistor A1267

    Abstract: A1268 a1267 Q62702-A1268 a1261 A1267 transistor Q62702-A1267 Q62702-A1261 VSO05561
    Text: BAR 63 . W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W VSO05561 BAR 63-06W Type Marking Ordering Code Pin Configuration


    Original     		3-04W 3-05W VSO05561 3-06W Q62702-A1261 OT-323 Q62702-A1267 transistor A1267 A1268 a1267 Q62702-A1268 a1261 A1267 transistor Q62702-A1267 Q62702-A1261 VSO05561 PDF

    COOPER BUSSMANN 160A Fuse

    Abstract: FUSE 1000v, 250a PV-250A PV350 UL2579 SD2XL-S
    Text: 1000Vdc XL Style Photovoltaic Fuses 63 to 630 Amps, 01XL, 1XL, 2XL and 3L Body Sizes Class of Operation: gPV and UL PV fuse links Fuse Sizes: 01XL, 1XL, 2XL and 3L Ratings: Volts - 1000Vdc Amps - 63 to 630A: IR - 50kA @ 63 to 160A - 33kA @ 200 to 315A - 50kA @ 350 to 630A


    Original     		1000Vdc BU-SB111362 COOPER BUSSMANN 160A Fuse FUSE 1000v, 250a PV-250A PV350 UL2579 SD2XL-S PDF

    Untitled

    Abstract: No abstract text available
    Text: BAR 63. Silicon PIN Diodes 3  PIN diode for high speed switching of RF signals Low forward resistance  Very low capacitance 2  For frequencies up to 3 GHz 1 BAR 63-04 BAR 63-05 BAR 63-06 3 3 3 1 2 VPS05161 1 2 EHA07005 1 2 EHA07006 EHA07004 Type Marking


    Original     		VPS05161 EHA07005 EHA07006 EHA07004 OT-23 EHD07138 100MHz EHB07147 PDF

    tda10086

    Abstract: TDA10093 digital satellite receiver TUNER DVB Philips TV tuners philips satellite tuner isdb-S TDA1009 satellite receiver TUNER digital satellite receiver TUNER philips tuners
    Text: TDA8262/63 TDA8262/63 high-performance silicon tuner solutions The TDA8262/63 silicon tuner ICs enable easy implementation of digital satellite reception, offering significant reductions in external component count to provide manufacturers with reductions in overall BOM for new STB, Personal Video


    Original     		TDA8262/63 TDA8262/63 tda10086 TDA10093 digital satellite receiver TUNER DVB Philips TV tuners philips satellite tuner isdb-S TDA1009 satellite receiver TUNER digital satellite receiver TUNER philips tuners PDF

    APN2014

    Abstract: AA101-80 AA104-73 AA101 SK38760 PFC212
    Text: Application Note 6 Bit 63 dB RF Digital Attenuator Solution 500–2000 MHz APN2014 Alpha has developed a low cost 6 bit 63 dB RF digital attenuator. Since it is difficult to attain the full 63 dB in a single package, Alpha has solved the problem by using two individual low cost, plastic packaged GaAs ICs


    Original     		APN2014 AA101-80 AA104-73 10/99A APN2014 AA101 SK38760 PFC212 PDF

    AD260-85

    Abstract: AD260 AA104-73 APN2013
    Text: Application Note 6 Bit 63 dB IF Digital Attenuator Solution 1–500 MHz APN2013 Alpha has developed a low cost 6 bit 63 dB IF digital attenuator. Since it is difficult to attain the full 63 dB in a single package, Alpha has solved the problem by using two individual low cost, plastic packaged GaAs ICs


    Original     		APN2013 AD260-85 AA104-73 9/99A AD260 APN2013 PDF

    Pin diode G4S

    Abstract: VSO05561
    Text: BAR 63 . W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W C1/A2 3 BAR 63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1


    Original     		3-04W 3-05W 3-06W VSO05561 EHA07181 EHA07179 EHA07187 OT-323 Pin diode G4S VSO05561 PDF

    Untitled

    Abstract: No abstract text available
    Text: S510066 UPSTREAM CATV AMPLIFIER FEATURES FUNCTIONAL DIAGRAM • SINGLE 3.3 V SUPPLY OPERATION • LOW POWER CONSUMPTION: 135 mA typical @ 63 dBmV output 3.3 V • 63 dB DYNAMIC RANGE: -0.5 to 63 dBmV output ATTN1 ATTN2 TXin+ Pre Amp • PROGRAMMABLE GAIN IN 0.5 dB STEPS


    Original     		S510066 S510066 PDF

    transformer turn ratio 18

    Abstract: DB33AV land pattern for TSsOP 20
    Text: S518324-44Z UPSTREAM CATV AMPLIFIER FUNCTIONAL DIAGRAM FEATURES • SINGLE 3.3 V SUPPLY OPERATION • LOW POWER CONSUMPTION: 135 mA typical @ 63 dBmV output • 63 dB DYNAMIC RANGE: -0.5 to 63 dBmV output • PROGRAMMABLE GAIN IN 0.5 dB STEPS • ULTRA LOW ON/OFF TRANSIENTS


    Original     		S518324-44Z S518324 QFN20 TSSOP20 TSSOP-20 transformer turn ratio 18 DB33AV land pattern for TSsOP 20 PDF

    4501500

    Abstract: No abstract text available
    Text: 22 January 2010 Specification for monolithic crystal filter: MQF 45.0-1500/63 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: MQF 45.0-1500/63 6 0°C to +70°C -40°C to +85°C


    Original     		50kHz. 4501500 PDF

    Untitled

    Abstract: No abstract text available
    Text: 11 November 2010 MQF 45.0-1500/63 Specification for monolithic crystal filter: 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: MQF 45.0-1500/63 6 0°C to +70°C -40°C to +85°C


    Original     		50kHzâ 160mm 200mm PDF

    Untitled

    Abstract: No abstract text available
    Text: r le = 30 AMPS DEVICE TYPE VOLTS BV ebo VOLTS P0 @ 100°C WATTS 80 100 150 80 100 80 100 150 80 100 6.0 6.0 6.0 8.0 8.0 TO-63 TO-3 80 80 80 80 TO-3 200 250 PACKAGE BVceo VOLTS 2N4003 TO-63 TO-63 TO-63 TO-63 TO-63 2N5733 2N5734 2N2823 2N2824 2N2825 2N4002 ^XG SR 50020


    OCR Scan     		2N2823 2N2824 2N2825 2N4002 2N4003 2N5733 2N5734 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAR 63. Silicon PIN Diode • • • • PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type BAR BAR BAR BAR 63 63-04 63-05 63-06 Marking Ordering code tape and reel G3 G4


    OCR Scan     		Q62702-A1036 Q62702-A1037 Q62702-A1038 Q62702-A1039 OT-23 BAR63-04 fi235fci05 EHD07139 fl23SbOS PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAR 63. Silicon PIN Diode • • • • PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type Marking Ordering code tape and reel BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 G3 G4


    OCR Scan     		Q62702-A1036 Q62702-A1037 Q62702-A1038 Q62702-A1039 OT-23 BAR63 BAR63-04 fl235b05 PDF

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BAR 63. Silicon PIN Diode • • • • PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type BAR BAR BAR BAR 63 63-04 63-05 63-06 Marking Ordering code tape and reel


    OCR Scan     		Q62702-A1036 Q62702-A1037 Q62702-A1038 Q62702-A1039 OT-23 BAR63 BAR63 BAR63-04 PDF

    Marking Code FGs

    Abstract: XS marking code marking 297
    Text: SIEMENS Silicon Schottky Diode BAT 63 • Low barrier diode for mixer and detectors up to GHz frequencies Type BAT 63 Ordering Code tape and reel 1 Q62702-A1004 A1 Pin Configuration 2 4 3 C2 A2 C1 Marking Package 63 SOT-143 Maximum Ratings Parameter Symbol


    OCR Scan     		Q62702-A1004 OT-143 Marking Code FGs XS marking code marking 297 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Schottky Diode BAT 63 • Low barrier diode for mixer and detectors up to GHz frequencies Type BAT 63 Ordering Code tape and reel 1 Q62702-A1004 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package 63 SOT-143 Maximum Ratings Parameter Symbol


    OCR Scan     		Q62702-A1004 OT-143 E35bGS 01503St> W111M PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAR 63. W Silicon PIN Diode >PIN diode for high speed switching of RF signal »Low forward resistance >Very low capacitance • For frequencies up to 3 GHz BAR 63-04W BAR 63-05W BAR 63-06W C1/C2 A1/A2 EL -0 - nr TJ nr nr Marking Ordering Code Pin Configuration


    OCR Scan     		3-04W 3-05W 3-06W Q62702-A1261 Q62702-A1267 Q62702-A1268 OT-323 PDF

    Pin diode G4S

    Abstract: marking g4s Q62702-A1261
    Text: SIEMENS BAR 63. W Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up to 3 GHz BAR 63-04W BAR 63-05W BAR 63-06W C 1 /A 2 M /A2 ill m . / LJ \ . M Cl C2 eHA0718>


    OCR Scan     		3-04W 3-05W 3-06W eHA0718> 3-04W 3-05W Q62702-A1261 Q62702-A1267 Q62702-A1268 Pin diode G4S marking g4s PDF