TO-39 TRANSISTORS Search Results

TO-39 TRANSISTORS Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TO-39 TRANSISTORS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NSP5665 Abstract: sat 1205 Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *	Original	2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 O-254 NSP6340 NSP5665 sat 1205	PDF
2N5339 Abstract: No abstract text available Text: 2N5339 SILICON NPN TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistors in Jedec TO-39 metal case It is intended for high switching applications up to 5A. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS	Original	2N5339 2N5339	PDF
BFY52 Abstract: BFY51 BFY50 BFY50-BFY51 BFY50I Text: BFY50-BFY51 BFY52 MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM	Original	BFY50-BFY51 BFY52 BFY50, BFY51 BFY52 BFY50 BFY51 BFY50 BFY50-BFY51 BFY50I	PDF
2N4033 Abstract: transistor 2N4033 Text: 2N4033 GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N4033 is a silicon planar epitaxial PNP transistors in Jedec TO-39 metal case primary intended for large signal, low noise industrial applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS	Original	2N4033 2N4033 transistor 2N4033	PDF
BSY54 Abstract: BSY53 BSY53-BSY54 Text: BSY53 BSY54 GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BSY53 and BSY54 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, intended for use in general purpose amplifiers. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol	Original	BSY53 BSY54 BSY54 BSY53-BSY54 220otherwise BSY53-BSY54	PDF
BSY56 Abstract: bsy55 Text: BSY55 BSY56 GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BSY55 and BSY56 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, intended for use in high performance amplifier, oscillator and switching circuits. TO-39 INTERNAL SCHEMATIC DIAGRAM	Original	BSY55 BSY56 BSY56 BSY55-BSY56	PDF
2N5680 Abstract: 2N5679 2N5681 2N5682 Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS.	Original	ISO/TS16949 2N5679 2N5680 2N5681 2N5682 25deg 2N5680 2N5679 2N5681 2N5682	PDF
BFY50 Abstract: BFY51 bfy51 equivalent BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY52 BFY51I bfy50 cb Text: BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS	Original	BFY50/51 BFY50 BFY52 BFY50 BFY51 BFY51 bfy51 equivalent BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY51I bfy50 cb	PDF
2N5680 Abstract: 2N5679 2N5681 2N5682 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS.	Original	2N5679 2N5680 2N5681 2N5682 25deg 2N5680 2N5679 2N5681 2N5682	PDF
Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BSX62, BSX63 TO-39 Metal Can Package NPN SILICON PLANAR TRANSISTORS IN TO-39 PACKAGE. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise	Original	BSX62, BSX63 BSX62 C-120 63Rev310701	PDF
2N5154 Abstract: No abstract text available Text: 2N5154 SILICON NPN TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N5154 is a silicon epitaxial planar NPN transistors in Jedec TO-39 metal case intended for use in switching applications. The complementary PNP type is the 2N5153. TO-39 INTERNAL SCHEMATIC DIAGRAM	Original	2N5154 2N5154 2N5153.	PDF
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N5109 TRANSISTOR 12 GHZ Text: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA • 1. Emitter 2. Base 3. Collector Maximum Unilateral Gain = 12dB typ @ 200 MHz TO-39 DESCRIPTION:	Original	2N5109 To-39 MRF545 MRF544 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 1000 WATT 2N5109 TRANSISTOR 12 GHZ	PDF
2N5680 Abstract: 2N5681 2N5682 2N5679 TO-39 CASE to ambient Text: Transys Electronics L I M I T E D PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL 2N5679 2N5681 100 100	Original	2N5679 2N5680 2N5681 2N5682 25deg 2N5680 2N5681 2N5682 2N5679 TO-39 CASE to ambient	PDF
BSX62 Abstract: BSX62-10 BSX62-16 BSX63-16 BSX62-6 BSX63 BSX63-10 BSX63-6 bsx6210 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BSX62, BSX63 TO-39 Metal Can Package NPN SILICON PLANAR TRANSISTORS IN TO-39 PACKAGE. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise	Original	BSX62, BSX63 BSX62 C-120 63Rev310701 BSX62 BSX62-10 BSX62-16 BSX63-16 BSX62-6 BSX63 BSX63-10 BSX63-6 bsx6210	PDF

ksd113 Abstract: NSDU57 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92 Text: PNP Transistors V cbo V Min v CEO (V) Min Vebo (V) Min 2N4030 TO-39 60 60 5 2N4031 TO-39 80 60 80 60 5 5 50 50 50 50 60 50 TO-39 80 80 5 50 60 also Avail. JA N /T X /V Versions 2N4036 TO-39 90 85 TO-39 60 40 2N4314 TO-39 90 65 7 20 60 10 25 40 30 40 70 100	OCR Scan	bS01130 D0B70fll NSD206 O-202 NSDU56 NSDU57 ksd113 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92	PDF
BUY82 Abstract: 2N3419 N342 2N3418 2N4036 2N4037 BFX34 BSV60 2N3420 BUX34 Text: PLANAR SWITCHING PLAN AR SW ITC H IN G T R A N S IS T O R S E LE C T O R C H A R T Devices listed are NPN except where marked with* which signifies PNP. Package TO-39 V ceo 1A 40 2N4037* 60 2N4036* 80 2N4000 100 2 N4001 Volts TO-39 TO-39 TO-39 TO-39 TO-39	OCR Scan	2N4037 BSV60 2N4036* BSV64 BFX34 2N3418 N3420 BUY90* BUX34 BUY80 BUY82 2N3419 N342 2N4036 2N4037 BSV60 2N3420	PDF
BFW45 Abstract: BFR59 BFS89 BFS90 BFS91 BFT47 BFT48 BFT49 BFT57 BFT58 Text: High Voltage Transistors TYPE NO. 101 POLA RITY CASE MAXIMUM RATINGS VCEO IC Pd ICM* VCER* mA (mW) (V) VCE(sat) HFE min max IC (mA) VCE (V) m ai (V) IC (mA) fr min (MHz) Cob Cre* max (MHz) BFR59 BFS89 BFS90 BFS91 BFT47 N N P P N TO-39 TO-39 TO-39 TO-39	OCR Scan	BFR59 BFS89 BFS90 BFS91 BFT47 5000G BFT48 BFT49 BFW45 BFT57 BFT58	PDF
2N40361 Abstract: BUX34 N4001 2N3418 2N4036 2N4037 BFX34 BSV60 BSV64 BUY80 Text: PLANAR SWITCHING PLAN AR SW ITC H IN G T R A N S IS T O R S E LE C T O R C H A R T Devices listed are NPN except where marked with* which signifies PNP. Package TO-39 V ceo 1A 40 2N4037* 60 2N4036* 80 2N4000 100 2 N4001 Volts TO-39 TO-39 TO-39 TO-39 TO-39	OCR Scan	2N4037 BSV60 2N4036* BSV64 BFX34 2N3418 N3420 BUY90* BUX34 BUY80 2N40361 N4001 2N4036 2N4037 BSV60	PDF
BUY80 Abstract: 2N3418 2N3420 2N4036 2N4037 BFX34 BSV60 BSV64 BUX34 BUY90 Text: PLANAR SWITCHING P LA N A R SW ITCHING T R A N SISTO R S ELECTO R C H A R T Devices listed are N P N except where marked w ith * w hich signifies PN P. Package !c V ceo J O -3 9 TO-39 TO-39 TO-39 TO-39 TO-39 1A 2A 3A 5A 7.5A 10A V olts 40 B S V 60 2N4037*	OCR Scan	JO-39 2N4037* BSV60 2N4036* BSV64 BFX34 2N3418 2N3420 BUY90* BUX34 BUY80 2N4036 2N4037 BSV60 BUY90	PDF
2N697 equivalent Abstract: 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA 2N3914 2N1711 DH3467CD N2904A BFY39 BFY50 equivalent Text: Discrete Devices Transistors Cont. European “Pro Electron” Types (Cont.) Near Equivalent Near Equivalent Polarity Pkg. Type BFX30 BFX37 BFX65 BFX84 BFX85 2 N2904A 2N2605* 2N2605* 2N1711 2N171-1 PNP PNP PNP NPN NPN TO-39 T O -18 T O -18 TO-39 TO-39 BSX45-10	OCR Scan	BFX30 N2904A BFX37 2N2605* BFX65 BFX84 2N1711 BFX85 2N171-1 2N697 equivalent 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA 2N3914 DH3467CD BFY39 BFY50 equivalent	PDF
transistor bc 138 Abstract: bc 301 transistor transistor Bc 287 bc 303 transistor transistor BC 341 transistor BC 388 TRANSISTOR BC 345 transistor bc 144 transistor BC 310 transistor BC 185 Text: 6 0 9 1 7 8 8 M I C R O E L E C T R O N I C S criiy» as D E Ït.D 'ilT flfl DODDbSS 82 D 0 0 6 5 5 7 Medium Power Amplifiers and Switches POLARITY M AXIM UM RATINGS CASE BC119 BC 138 BC 139 BC 140 BC 141 N N P N N TO-39 TO-39 TO-39 TO-39 TO-39 800 800 700	OCR Scan	BC119 to-237 to-02 melf-002. melf-006 to-237 MT-12 Sto/s-20 O-16H S40/S- transistor bc 138 bc 301 transistor transistor Bc 287 bc 303 transistor transistor BC 341 transistor BC 388 TRANSISTOR BC 345 transistor bc 144 transistor BC 310 transistor BC 185	PDF
Untitled Abstract: No abstract text available Text: TO-39 Metal-Can Package Transistors PNP 42	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: TO-39 Metal-Can Package Transistors NPN 40	OCR Scan		PDF
VP0808 Abstract: vp0808M Text: Brsfconj* VP0808 SERIES P-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY BOTTOM VIEW TO-39 TO-205AD PART NUMBER V (BR)DSS r DS(ON) •d (V) (ii) (A) PACKAGE VP0808B -80 5 -0.88 TO-39 VP0808L -80 5 -0.28 TO-92 VP0808M -80 5 -0.31 TO-237 1 SOURCE	OCR Scan	VP0808 O-205AD) VP0808B VP0808L VP0808M O-237 VPDV10 O-226AA) vp0808M	PDF

TO-39 TRANSISTORS Search Results

TO-39 TRANSISTORS Result Highlights (5)

TO-39 TRANSISTORS Datasheets Context Search

NSP5665

2N5339

BFY52

2N4033

BSY54

BSY56

2N5680

BFY50

2N5680

Untitled

2N5154

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

2N5680

BSX62

ksd113

BUY82

BFW45

2N40361

BUY80

2N697 equivalent

transistor bc 138

Untitled

Untitled

VP0808