TO-39 CASE TO AMBIENT Search Results

TO-39 CASE TO AMBIENT Result Highlights (5)

Part	Manufacturer	Description	Download
CS-DSDMDB09MF-010	Amphenol Cables on Demand	Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft	Datasheet
CS-DSDMDB15MF-002.5	Amphenol Cables on Demand	Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft	Datasheet
CS-DSDMDB15MM-025	Amphenol Cables on Demand	Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft	Datasheet
CS-DSDMDB25MM-010	Amphenol Cables on Demand	Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft	Datasheet
CS-DSDMDB37MM-002.5	Amphenol Cables on Demand	Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft	Datasheet

TO-39 CASE TO AMBIENT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
UVA photodiode Abstract: 4W-08 EPD360 Text: Photodiode EPD-360-0-0.3-1 10.05.2007 Preliminary rev. 02/07 Wavelength Type Technology Case UV-A clear UV-glass + filter SiC TO-39 Description 8,33 Selective photodiode with high spectral sensitivity in the UVA range 330 nm - 400 nm , mounted in hermetically sealed TO-39 package with clear	Original	EPD-360-0-0 D-12555 UVA photodiode 4W-08 EPD360	PDF
EPD-310-0-0 Abstract: UV 310 nm Text: Photodiode EPD-310-0-0.3-1 11.04.2007 Preliminary rev. 02/07 Wavelength Type Technology Case UV-B clear UV-glass + filters SiC TO-39 Description 8,33 Selective photodiode with high spectral sensitivity in the UVB range 290 nm - 330 nm , mounted in hermetically sealed TO-39 package with clear	Original	EPD-310-0-0 D-12555 UV 310 nm	PDF
Untitled Abstract: No abstract text available Text: ^£.mi- 2onductoi , Una. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BCX23 BCX39 BCX 23 and BOX 39 are epitaxial PNP silicon planar transistors in TO 18 metal case (18 A 3 DIN 41876). The collector is electrically connected to the case. These transistors	Original	BCX23 BCX39	PDF
mm5416 Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 772 283-4500 FAX: (772)286-8914 Website: http://www.semi-tech-inc.com Email: data1@semi-tech-inc.com TYPE: MM5416 CASE OUTLINE: TO-205AD (TO-39) PNP SILICON TRANSISTOR	Original	MM5416 O-205AD mm5416	PDF
zener 7.5 B 49 sot 323 Abstract: MMBZ5238BW Text: MMBZ52xBW Series SURFACE MOUNT ZENER DIODE REVERSE VOLTAGE – 2.4 to 39 Volts POWER DISSIPATION – 0.2 Watts FEATURES SOT-323 • Planar die construction • 200mW power dissipation rating SOT-323 Dim. MECHANICAL DATA • Case: SOT-323 Plastic • Case Material: “Green” molding compound, UL	Original	MMBZ52xBW OT-323 OT-323 200mW J-STD-020D 2002/95/EC May-2009, KSJR10 zener 7.5 B 49 sot 323 MMBZ5238BW	PDF
GPD-201 Abstract: GPD-405 GPD-403 GPD-402 GPD-120 GPD-401 GPD-404 GPD-202 GPD-321 GPD-331 Text: electronics marketing 800.332.8638 Avnet Microwave Technical Solutions IF/RF Low Cost Cascadable Modules Selection Guide GPD Series GPM Series Features Description Case Types • Small Size The GPD and GPM amplifiers, available in TO-12 4-pin and TO-39 (3-pin) packages, are	Original		PDF
Untitled Abstract: No abstract text available Text: HIGH TEMPERATURE GaAlAs IR EMITTERS OD-110LISOLHT FEATURES • Wide temperature rating • 2 lead TO-39 package • Narrow angle of emission • Isolated case • RoHS and REACH compliant RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C TEST CONDITIONS MIN TYP	Original	OD-110LISOLHT 500mA	PDF
Untitled Abstract: No abstract text available Text: HIGH TEMPERATURE WIDE ANGLE IRLED OD-110WISOLHT FEATURES • Wide temperature rating • 2 lead TO-39 package • Ideal for hi temp industrial applications • Isolated case • RoHS and REACH compliant RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C TEST CONDITIONS	Original	OD-110WISOLHT 500mA Fal80	PDF
kdn 010 Abstract: No abstract text available Text: AZ23Cx Series SURFACE MOUNT ZENER DIODE REVERSE VOLTAGE – 2.7 to 39 Volts POWER DISSIPATION – 0.3 Watts FEATURES SOT-23 • Dual zeners in common anode configuration • 300mW power dissipation rating SOT-23 Dim. MECHANICAL DATA • Case: SOT-23 Plastic	Original	AZ23Cx OT-23 OT-23 300mW J-STD-020D 2002/95/EC May-2009, KSJR01 kdn 010	PDF
TRANSISTOR BC 157 Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor Text: 2SC D • û23SbOS 0004100 T_«SIE<S^ PNP Silicon Transistors SIEMENS . AKTIENGESELLSCHAF B c160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as	OCR Scan	23SbOS BC160 Q62702-C228 Q62702-C228-V6 Q62702-C228-V10 Q62702-C228-V16 Q62702-C228-P 160/BC140 Q62702-C228-S2 BC1611> TRANSISTOR BC 157 BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor	PDF
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE b'lE ]> □ □27'UT 5b7 • APX bbS3T31 BSX45 to 47 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes with the collector connected to the case. These transistors are intended for general industrial applications.	OCR Scan	bbS3T31 BSX45 BSX45 BSX46 BSX47 BSX46â	PDF
transistor BC 153 Abstract: transistor C719 TRANSISTOR C236 TRANSISTOR BC 141 transistor BC SERIES TRANSISTOR BC 140 transistor BC 153 a TRANSISTOR BC140 c236 transistor BC transistor series Text: ESC » m ö23SbQS 0Q043.04 2 « S I E G , NPN Silicon Transistors SIEMENS AKTIENGESELLSCHÂF 3c 140 BC 141 BC 140 and BC 141 are epitaxial NPN silicon transistors in TO 39 case 5 C 3 OIN 41873 . The collector is electrically connected to the case. The transistors are intended for use in AF	OCR Scan	23SbQS 0Q043 60203-X 60203-X140-V6 60203-X140-P 140/BC160 62702-C228-S2 62702-C719 transistor BC 153 transistor C719 TRANSISTOR C236 TRANSISTOR BC 141 transistor BC SERIES TRANSISTOR BC 140 transistor BC 153 a TRANSISTOR BC140 c236 transistor BC transistor series	PDF
transistor BC 157 Abstract: TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC transistor series Siemens a35 BC161-10 Text: ESC D • û235bOS 0004100 T « S I E â ^ . .-r-M-âZ- PNP Silicon Transistors SIEMENS AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as	OCR Scan	BC160 BC160' 160/BC140 BC161/BC141 8C161 transistor BC 157 TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC transistor series Siemens a35 BC161-10	PDF
Defense Electronics Supply Center Abstract: 5962-8998101X Text: REVISIONS LTR DATE DESCRIPTION APPROVED YR-HO-DA Change input to output voltage differential in 1.3, 1.4, VREE, 'Orline' an<* delta 1Ani conditions. Change I. test Tinits for conditions CVIN - Vol\|T> = 2.5 V from 0.05 A to 0.075 A. Add case outline Y (TO-39).	OCR Scan	5962-R054-94. MIL-BUL-103. MIL-BUL-103 00470a Defense Electronics Supply Center 5962-8998101X	PDF

Transistor BSX 63-10 Abstract: Transistor BSX 62-16 BSX62 Q60218-X62-B BSX63 Q60218-X62-C Q60218-X62-D Q60218-X63-B Q60218-X63-C Text: BSX 62, BSX 63 NPN transistors for AF output stages and switching applications B S X 62 and B S X 63 are epitaxial silicon NPN planar transistors in a case 5 C 3 DIN 41873 TO -39 . The collector is electrically connected to the case. The transistors are particularly suitable for A F output stages and as a medium-power switch.	OCR Scan	Q60218-X62-B Q60218-X62-C Q60218-X62-D Q60218-X63-B Q60218-X63-C at7rase-25Â BSX62BSX63 Transistor BSX 63-10 Transistor BSX 62-16 BSX62 BSX63 Q60218-X63-C	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b'lE D b b S B ^ l □□S7flDT 737 I APX BFY55 V. SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-39 metal case with the collector connected to the case. It is primarily intended for use in high frequency and very high frequency oscillators and amplifiers as well as fo r output stages	OCR Scan	BFY55 bbS3R31 0027fllfl 00276E0	PDF
Untitled Abstract: No abstract text available Text: 7" ^ 3 7 - / ¿ r 2SC » • 023SbGS 00047^4 1 « S I E G PNP Silicon Planar Transistors BSV 15 BSV16 BSV 17 - SIEMENS AKTIENGESELLSCHAF BSV 15, BSV 16 and BSV 17 are epitaxial PNP silicon planar transistors in TO 39 case {5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are	OCR Scan	023SbGS BSV16 62702-S425 62702-S207 62702-S208 Q62702-S209 62702-S426 62702-S210 62702-S	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE • LIE D bbS3^31 DD27T33 T37 BSX59 to 61 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-39 metal envelope with the collector connected to the case. The BSX59, BSX60 and BSX61 are primarily intended for very high speed core-driving purposes.	OCR Scan	DD27T33 BSX59 BSX59, BSX60 BSX61 BSX59 BSX60 b53T31 00371ME	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b'lE D • APX bbS3^31 QD3flD77 T16 2N1893 SILICON TRANSISTOR High voltage n-p-n transistor in a TO-39 metal envelope with the collector connected to the case. It is intended for use in high performance amplifier, oscillator and switching applications.	OCR Scan	QD3flD77 2N1893	PDF
2n2219 Abstract: No abstract text available Text: 2N2219 2N2219A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-39 metal envelope w ith the collector connected to the case. They are primar ily intended fo r high speed switching. The 2N2219 is also suitable fo r d.c. and v.h.f./u.h.f. amplifiers.	OCR Scan	2N2219 2N2219A 2N2219 1N916.	PDF
BFY45 Abstract: BFY 39 transistor Q60206-Y45 1250-kW transistor BFY45 BFy 90 transistor BFY4 Text: BFY45 Not for new d e v e lo p m e n t NPN Transistor for lower-pow er switching applications The B F Y 45 is a silicon double-diffused NPN planar transistor in a case 5 C 3 DIN 41873 TO-39 . The collector is electrically connected to the case. The BFY 45 is designed for low power, high voltage switching applications, e.g. for	OCR Scan	BFY45 BFY45 60206-Y45 BFY 39 transistor Q60206-Y45 1250-kW transistor BFY45 BFy 90 transistor BFY4	PDF
BSX59 Abstract: BSX60 BSX61 iC-lg 10MA B2450 silicon planar epitaxial transistors MAX4530 Text: BSX59 to 61 PHILIPS INTERNATIONAL St>E » • 7110ßHb 0042422 STl MPHIN “F 2 7 - Z 3 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-39 metal envelope with the collector connected to the case. The BSX59, BSX60 and BSX61 are primarily intended for very high speed core-driving purposes.	OCR Scan	BSX59 00H2M22 F27-Z3 BSX59, BSX60 BSX61 BSX61 Z82449 iC-lg 10MA B2450 silicon planar epitaxial transistors MAX4530	PDF
Transistor BSX 62-16 Abstract: No abstract text available Text: ESC D • 023Sb05 Q Q Q M û n T H S I E â { NPN Silicon Planar Transistors BSX62 -BSX63 - SIEMENS AKTIEN6ESELLSCHAF -BSX 62 and BSX 63 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3	OCR Scan	023Sb05 BSX62 ------------------------------------BSX63 Q60218-X62 Q60218-X62-B Q60218-X62-C Q60218-X62-D Q60218-X63 Q60218-X63-B 060218-X63-C Transistor BSX 62-16	PDF
ic 2904 Abstract: N2905 Text: 2SC T> m 023SbOS 00040=52 'î « S I E G “ _ / ~ + 7 *'/7 2 N 2904 2 N 2905 PNP Silicon Planar Transistors - SIEMENS AKTIENGESELLSCHAF - 2 N 2 9 0 4 and 2 N 2 9 0 5 are epitaxial PNP silicon planar transistors in TO 39 case 5 C 3 DIN 41 8 7 3 . The collector is electrically connected to the case. The transistors are	OCR Scan	023SbOS ic 2904 N2905	PDF

TO-39 CASE TO AMBIENT Search Results

TO-39 CASE TO AMBIENT Result Highlights (5)

TO-39 CASE TO AMBIENT Datasheets Context Search

UVA photodiode

EPD-310-0-0

Untitled

mm5416

zener 7.5 B 49 sot 323

GPD-201

Untitled

Untitled

kdn 010

TRANSISTOR BC 157

Untitled

transistor BC 153

transistor BC 157

Defense Electronics Supply Center

Transistor BSX 63-10

Untitled

Untitled

Untitled

Untitled

2n2219

BFY45

BSX59

Transistor BSX 62-16

ic 2904