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    TO-18 AMPS PNP TRANSISTOR Search Results

    TO-18 AMPS PNP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TO-18 AMPS PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3773 NPN Audio Power AMP Transistor

    Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006
    Text: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25


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    PDF OT-223 O-225AA O-126) O-220AB O-220 O-218 O-247 O-264 O-204AA O-204AE 2N3773 NPN Audio Power AMP Transistor 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort NPN Complementary Silicon Plastic Power Transistors MJW21192 Specifically designed for power audio output, or high power drivers in audio amplifiers. MJW21191 • • • • DC Current Gain Specified up to 8.0 Amperes at Temperature All On Characteristics at Temperature


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    PDF MJW21192 MJW21191 O-247AE MJW21191 MJW21192

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    MJL3281A

    Abstract: No abstract text available
    Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency


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    PDF MJL3281A MJL1302A MJL3281A MJL1302A

    MJW21196

    Abstract: No abstract text available
    Text: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com


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    PDF MJW21195 MJW21196 MJW21195 MJW21196

    MJW2119x

    Abstract: No abstract text available
    Text: MJW21193 PNP MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com


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    PDF MJW21193 MJW21194 MJW21193 MJW21194 MJW2119x

    Untitled

    Abstract: No abstract text available
    Text: MJW21192 NPN , MJW21191 (PNP) Complementary Silicon Plastic Power Transistors Specifically designed for power audio output, or high power drivers in audio amplifiers. • • • • • DC Current Gain Specified up to 8.0 A at Temperature All On Characteristics at Temperature


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    PDF MJW21192 MJW21191 247AE MJW21192/D

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: MJW21192 NPN , MJW21191 (PNP) Complementary Silicon Plastic Power Transistors Specifically designed for power audio output, or high power drivers in audio amplifiers. • • • • • DC Current Gain Specified up to 8.0 A at Temperature All On Characteristics at Temperature


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    PDF MJW21192 MJW21191 O-247AE MJW21191 MJW21192 MJW21192/D

    MJW21191

    Abstract: MJW21191G MJW21192 MJW21192G
    Text: MJW21192 NPN , MJW21191 (PNP) Complementary Silicon Plastic Power Transistors Specifically designed for power audio output, or high power drivers in audio amplifiers. • • • • • DC Current Gain Specified up to 8.0 A at Temperature All On Characteristics at Temperature


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    PDF MJW21192 MJW21191 O-247AE MJW21192/D MJW21191 MJW21191G MJW21192 MJW21192G

    MJW21191

    Abstract: MJW21191G MJW21192 MJW21192G TO247AE
    Text: MJW21192 NPN , MJW21191 (PNP) Complementary Silicon Plastic Power Transistors Specifically designed for power audio output, or high power drivers in audio amplifiers. • • • • • DC Current Gain Specified up to 8.0 A at Temperature All On Characteristics at Temperature


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    PDF MJW21192 MJW21191 O-247AE MJW21192/D MJW21191 MJW21191G MJW21192 MJW21192G TO247AE

    MJ3281A

    Abstract: MJ1302A Motorola Bipolar Power Transistor Data complementary npn-pnp power transistors transistor pnp 3015 MJ1302 LOW FREQUENCY POWER bipolar npn TRANSISTOR to3 motorola bipolar transistor Motorola Power Transistor
    Text: MOTOROLA Order this document by MJ3281A/D SEMICONDUCTOR TECHNICAL DATA NPN Designer's MJ3281A* PNP MJ1302A*  Data Sheet Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS


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    PDF MJ3281A/D MJ3281A* MJ1302A* MJ3281A MJ1302A 204AA MJ3281A/D* Motorola Bipolar Power Transistor Data complementary npn-pnp power transistors transistor pnp 3015 MJ1302 LOW FREQUENCY POWER bipolar npn TRANSISTOR to3 motorola bipolar transistor Motorola Power Transistor

    MJW21194

    Abstract: MJW21193
    Text: MJW21193 PNP MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com


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    PDF MJW21193 MJW21194 MJW21193 MJW21194 r14525 MJW21193/D

    MJW21195

    Abstract: MJW21196
    Text: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com


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    PDF MJW21195 MJW21196 MJW21195 MJW21196 r14525 MJW21195/D

    340K-03

    Abstract: bipolar transistor motorola audio power amplifier Motorola Bipolar Power Transistor Data Motorola Power Transistor Data Book output audio amplifier bipolar transistor POWER BIPOLAR JUNCTION TRANSISTOR MJW21191 MJW21192 to-247AE
    Text: MOTOROLA Order this document by MJW21192/D SEMICONDUCTOR TECHNICAL DATA NPN MJW21192 Complementary Silicon Plastic Power Transistors PNP MJW21191 Specifically designed for power audio output, or high power drivers in audio amplifiers. • • • • DC Current Gain Specified up to 8.0 Amperes at Temperature


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    PDF MJW21192/D MJW21192 MJW21191 247AE MJW21192 340K-03 bipolar transistor motorola audio power amplifier Motorola Bipolar Power Transistor Data Motorola Power Transistor Data Book output audio amplifier bipolar transistor POWER BIPOLAR JUNCTION TRANSISTOR MJW21191 to-247AE

    MJW21196

    Abstract: MJW21195 npn 10000 JAPAN transistor
    Text: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com


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    PDF MJW21195 MJW21196 MJW21195 MJW21196 r14525 MJW21195/D npn 10000 JAPAN transistor

    TO-18 amps pnp transistor

    Abstract: BC107 BC108
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PACKAGE DEVICE TYPE V ceo sus VOLTS (max) AMPS TO-18 T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029


    OCR Scan
    PDF T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 TO-18 amps pnp transistor BC107 BC108

    2N4027

    Abstract: TO-18 amps pnp transistor 2N2907aA transistor BC109 IC 8002 2N4028 2n869a 2n3963 TRANSistor BC108 2N2907
    Text: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 TO-18 T0206AA 1*FE @ IC/ ^ C E min/max @ mA/V sus VOLTS Ic (max) AMPS 2N2906 40 0.6 40/120@150/10 2N2906AA 60 0.6 2N2907 40 2N2907AA V ceo PACKAGE DEVICE TYPE V cE (M t) @ I c/I b V @ m A/m A C<P


    OCR Scan
    PDF 2N2906 T0206AA 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N4027 TO-18 amps pnp transistor transistor BC109 IC 8002 2N4028 2n869a 2n3963 TRANSistor BC108

    PN4250

    Abstract: MPS-A70
    Text: PNP Transistors ö cn o L O W LEVEL AMPS Type No. Case Style Vc b o V) Min V CEO (V) Min 2N2604 TO-46 60 45 DO m v EBO (V) Min 6 'CBO (" A I Max 10 v CR (Ç f *>FE a Min Max 350 45 60 40 2N2605 TO-46 60 ‘ 45 6 10 2N3548 TO-18 TO-18 60 60 60 45 6 6 25


    OCR Scan
    PDF 2N2604 2N2605 2N3547 2N3549 2N3550 2N3799 2N5087 2N5227 MPSA70 MPS6523 PN4250 MPS-A70

    Q4015T

    Abstract: NP5138 Q6015LT Q4006AT Q4004LT MPS930 44t transistor Q4006LT
    Text: TRANSISTOR PART No TYPE Pt @25°C Watts VCEO Volts VEBO Volts VCBO Volts Hfe |ç a lc Amps Volts Hfe PACKAGE DESCRIPTION T 0 18 T 0 18 T 0 18 T 0 18 SGN SGN SGN SGN 0.20 0.50 0.50 0.50 0.05 0.80 0.80 0.80 15 30 30 40 3.0 5.0 5.0 6.0 30 60 60 75 20 25 50 50


    OCR Scan
    PDF 2N0918 2N2221 2N2222A 2N3646 2N3692 2N3702 2N3706 2N3709 2N3903 2N3904 Q4015T NP5138 Q6015LT Q4006AT Q4004LT MPS930 44t transistor Q4006LT

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJW21192/D SEMICONDUCTOR TECHNICAL DATA NPN MJW21192 Complementary Silicon Plastic Power Transistors PNP Specifically designed for power audio output, or high power drivers in audio amplifiers. • • • • DC Current Gain Specified up to 8.0 Amperes at Temperature


    OCR Scan
    PDF MJW21192/D MJW21192 O-247AE MJW21191 340K-03 O-247AE)

    BC5508

    Abstract: 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw
    Text: Selection Guide Page Small Signal Transistors 42 Small Signal MOSFETs 43 Junction FETs 44 Power Transistors 49 Switching Diodes 50 Schottky Diodes 51 Low Leakage Diodes 52 Stabistor Diodes 52 Zener Diodes 53 Transient Voltage Suppressors TVS 57 Current Limiting Diodes


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    PDF OT-23 350mW CMPTB099 CMPT2222A trK1000V) CMPS5064 OT-23 OT-89 CQ89D CQ89M BC5508 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw