ROUND ROBIN ARBITRATION AND FIXED PRIORITY SCHEME
Abstract: RC334 0X00FF0000
Text: Software Configuration of PCI Bridge on RC32334 Integrated Processor Notes Technical Note TN-45 By Harpinder Singh Intr Introduction This technical note describes the steps requires to initialize the PCI bridge on the RC32334. Specifically, this includes some example code as to how to initialize the device to support a host mode configuration,
|
Original
|
RC32334
TN-45
RC32334.
32-bit
ROUND ROBIN ARBITRATION AND FIXED PRIORITY SCHEME
RC334
0X00FF0000
|
PDF
|
XC9572XL-TQ100
Abstract: plx vhdl code transistor smd bc rn 100LVEL14 PCI9054-AA50PI vhdl code digital cross connector cPCI 2mm PAD60CIR36D xc9572xl pin configuration SMD TN12
Text: PM5372 PRELIMINARY REFERENCE DESIGN PMC-1991247 ISSUE 1 TSE REFERENCE DESIGN PM5372 TSE TRANSMISSION SWITCHING ELEMENT CORE CARD REFERENCE DESIGN PRELIMINARY ISSUE 1: MARCH 2000 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE
|
Original
|
PM5372
PMC-1991247
PMC-991247
PMC-990713
XC9572XL-TQ100
plx vhdl code
transistor smd bc rn
100LVEL14
PCI9054-AA50PI
vhdl code digital cross connector
cPCI 2mm
PAD60CIR36D
xc9572xl pin configuration
SMD TN12
|
PDF
|
MT45W4MW16B
Abstract: MT45W1MW16BP23Z MT45W4MW
Text: TN-45-24: Fixed-Latency Operation in CellularRAM 1.0 Devices Introduction Technical Note Fixed-Latency Operation in CellularRAM 1.0 Devices Introduction This technical note details how Micron has enhanced CellularRAM CR1.0 functionality to include fixed-latency operation. Fixed latency operation is not officially supported by
|
Original
|
TN-45-24:
09005aef8244d128/PDF:
09005aef8244d132
TN4524
MT45W4MW16B
MT45W1MW16BP23Z
MT45W4MW
|
PDF
|
P25A
Abstract: MT45W4MW16PCGA TN4508 mt45w4mw16pfa
Text: TN-45-08: 64Mb Async/Page CellularRAM Transition Guide Introduction Technical Note 64Mb Async/Page CellularRAM Transition Guide Introduction The Micron 64Mb family of PSRAM and CellularRAM™ devices—which have async/ page, async/page/burst and burst A/D MUX interfaces—have undergone a design
|
Original
|
TN-45-08:
09005aef81e92416/Source:
09005aef81e84dac
tn4508-09
P25A
MT45W4MW16PCGA
TN4508
mt45w4mw16pfa
|
PDF
|
TN-45-02
Abstract: No abstract text available
Text: TN-45-02: CellularRAM Memory Asynchronous and Mixed-Mode Slow-Clock or Long Setup WRITE Concerns Technical Note CellularRAM™ Asynchronous and Mixed-Mode Slow-Clock or LongSetup WRITE Concerns Introduction CellularRAM™ devices support the industry-standard SRAM control bus, using CE#,
|
Original
|
TN-45-02:
09005aef817a9969/Source:
09005aef8178cd0f
TN4502
TN-45-02
|
PDF
|
TN-45-20
Abstract: No abstract text available
Text: TN-45-20: Low-Power Options for Async/Page CellularRAM Introduction Technical Note Low-Power Options for Async/Page CellularRAM Introduction Micron CellularRAM™ devices are designed to be backward compatible with 6T SRAM, early-generation asynchronous, and page PSRAM. This backward compatibility
|
Original
|
TN-45-20:
128Mb
09005aef822cf141/Source:
09005aef822cf0d2
TN-45-20
|
PDF
|
an350
Abstract: AN-350 AN-366 RC32332
Text: Optimizing the PCI Interface on the RC3233x Application Note AN-366 By Rakesh Bhatia Notes Revision History April 30, 2002: Initial publication. September 12, 2002: Removed pointer for the BAR register in the PCI Target Transactions section. October 18, 2002: Changed device designation to RC3233x which includes 3 devices: RC32334,
|
Original
|
RC3233x
AN-366
RC3233x
RC32334,
RC32333,
RC32332.
32-bit
an350
AN-350
AN-366
RC32332
|
PDF
|
SCP1000-D11
Abstract: SCP1000 D01 SCP1000 SCP1000-D01 TN51 2716 eeprom
Text: Doc.Nr. 8260800.08 Product Family Specification SCP1000 Series Absolute pressure sensor SCP1000-D01 SCP1000-D11 SCP1000 Series Note: Reader is advised to notice that this Product Family Specification applies to SCP1000 having updated signal conditioning circuitry. This version can be recognized from the D01 or D11 marking on the top of the
|
Original
|
SCP1000
SCP1000-D01
SCP1000-D11
SCP1000-D11
SCP1000 D01
SCP1000-D01
TN51
2716 eeprom
|
PDF
|
SCP1000-D11
Abstract: SCP1000 D01 SCP1000-D01 MEMS pressure sensor mems ultrasonic sensors micro machined ultrasonic sensors MICRO USA Pressure Sensor SCP1000 smd transistor device marking p18 SMD transistor Marking rw
Text: Doc.Nr. 8260800.06 Product Family Specification SCP1000 Series Absolute pressure sensor SCP1000-D01 SCP1000-D11 SCP1000 Series Note: Reader is advised to notice that this Product Family Specification applies to SCP1000 version which is equipped with the first release of signal conditioning circuitry. It can be recognized from the P01 or P03 marking
|
Original
|
SCP1000
SCP1000-D01
SCP1000-D11
SCP1000
SCP1000-D11
SCP1000 D01
SCP1000-D01
MEMS pressure sensor
mems ultrasonic sensors
micro machined ultrasonic sensors
MICRO USA Pressure Sensor
smd transistor device marking p18
SMD transistor Marking rw
|
PDF
|
MT45W1MW16MBP23Z
Abstract: MT45W4MW16MBP25Z PSRAM MT45W2MW16MBP24A
Text: TN-45-06: Density Migration for x16 Burst Multiplexed PSRAM Introduction Technical Note Density Migration for x16 Burst Multiplexed PSRAM Die Introduction The Micron family of PSRAM devices is offered in several densities and in the following options: async/page, async/page/burst, and x16 burst multiplexed.
|
Original
|
TN-45-06:
09005aef81e31352/Source:
09005aef81df76e2
tn4506
MT45W1MW16MBP23Z
MT45W4MW16MBP25Z
PSRAM
MT45W2MW16MBP24A
|
PDF
|
Micron 32MB NOR FLASH
Abstract: variable resistor 104 micron resistor MT45W4MW16B micron 128MB NOR FLASH MT45W4MW16BC 4522
Text: TN-45-22: Variable vs. Fixed Latency CellularRAM Operation Introduction Technical Note Variable vs. Fixed Latency CellularRAM Operation Introduction Micron CellularRAM™ devices are designed to be backward compatible with 6T SRAM and early-generation asynchronous/page PSRAM. Backward compatibility is essential
|
Original
|
TN-45-22:
128Mb
09005aef823e94b1/Source:
09005aef823e9a7d
Micron 32MB NOR FLASH
variable resistor 104
micron resistor
MT45W4MW16B
micron 128MB NOR FLASH
MT45W4MW16BC
4522
|
PDF
|
micron vccp
Abstract: TN-45-13 UtRAM Density micron 128MB NOR FLASH K1B2816
Text: TN-45-13: CellularRAM replacing UtRAM Introduction Technical Note Using CellularRAM to Replace UtRAM Introduction The Micron family of CellularRAM™ devices is designed to be backward compatible with 6T SRAM and early-generation asynchronous and page PSRAM. Designs requiring
|
Original
|
TN-45-13:
09005aef8201fbdc
TN4513
09005aef8201fb90/Source:
micron vccp
TN-45-13
UtRAM Density
micron 128MB NOR FLASH
K1B2816
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SOHO Gateways Application Brief #7 Background/Introduction As the use of personal computers and other intelligent devices in the small office/home office SOHO continues to grow, the need to have them networked inside the premise to common peripherals such as
|
Original
|
RC32334
APP-BRF7-00011
|
PDF
|
M34552G8FP
Abstract: M34552G8HFP M34553G8FP M34553G8HFP M34556G8FP M34556G8HFP
Text: Date: Mar.16.2004 RENESAS TECHNICAL UPDATE Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan RenesasTechnology Corp. Product Category Title MPU&MCU Document No. TN-450-007A/EA 4552/4553/4556Group One Time PROM version Notice of updated Recommended operating conditions
|
Original
|
TN-450-007A/EA
4552/4553/4556Group
4552Group
4553Group
4556Group
M34552G8FP,
M34552G8HFP
M34553G8FP,
M34553G8HFP
M34556G8FP,
M34552G8FP
M34552G8HFP
M34553G8FP
M34553G8HFP
M34556G8FP
M34556G8HFP
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: 340 Gbps STS-1 Time Slot Interchange Switch Features • Monitors cross-connect program memory integrity • 136 x 136 time slot interchange TSI switch with non-blocking, 6528 × 6528, Synchronous Transport Signal level 1 (STS-1) switch matrix yields 340 Gigabits
|
Original
|
STS-12
VMDS-10144
VSC9295
VSC9295SM
1072-pin,
VSC9295XSM.
|
PDF
|
MT45W4MW16MBP25Z
Abstract: 000D MT45W1MW16MBP23Z MT45W2MW16MBP24Z
Text: TN-45-15: Row Boundary Crossing Functionality Introduction Technical Note Row Boundary Crossing Functionality in CellularRAM Memory Introduction Micron’s CellularRAM® devices are designed to be backward-compatible with 6T SRAM and early-generation asynchronous and page PSRAM, and are based on a fixed row size.
|
Original
|
TN-45-15:
MT45W512KW16BE)
MT45W2MW16B)
MT45W2MW16MBP24A"
MT45W2MW16MBP24Z"
09005aef820db72a/Source:
09005aef820db6f3
MT45W4MW16MBP25Z
000D
MT45W1MW16MBP23Z
MT45W2MW16MBP24Z
|
PDF
|
Burst CellularRAM Memory
Abstract: 15X16
Text: TN-45-07: Implementing CR 2.0 x32 with Two CR 1.5 x16 Devices Introduction Technical Note Implementing CellularRAM 2.0 x32 with Two CellularRAM 1.5 x16 Devices Introduction Increasingly sophisticated mobile memory devices require the ability to store and
|
Original
|
TN-45-07:
09005aef81e83837/Source:
09005aef81e7a69c
TN4507
Burst CellularRAM Memory
15X16
|
PDF
|
FCRAM
Abstract: No abstract text available
Text: TN-45-14: CellularRAM Replacing Fujitsu 3V FCRAM Introduction Technical Note Using CellularRAM Memory to Replace Fujitsu 3V FCRAM Introduction Micron CellularRAM™ devices are designed to be backward compatible with 6T SRAM and early-generation asynchronous and page PSRAM. Designs requiring high speed and
|
Original
|
TN-45-14:
CellularR9e486
TN4514
09005aef8209e446/Source:
09005aef8209e486
FCRAM
|
PDF
|
N450CH24
Abstract: TN450C N450C thyristor n450ch 1080A Westinghouse thyristor 1500
Text: lilESTCODE SEMICONDUCTORS 31E J> m ITD'HSS 0002217 1 • WESB T - Z S 'Z I I Technical Publication WESTCODE ® SEMICONDUCTORS TN450C Issue 3 ^ J u l y 1985 ^ Convertor Grade Capsule Thyristor Type N450C 1080 amperes average: up to 2400 volts V r r m R a t i n g s Maximum values at 125°C Tj unless stated otherwise
|
OCR Scan
|
N450C
TN450C
6000A
SN151JL
2M785
N450CH24
TN450C
N450C thyristor
n450ch
1080A
Westinghouse thyristor 1500
|
PDF
|
IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
|
OCR Scan
|
|
PDF
|
JEDEC tray standard dimension
Abstract: CN MEZZANINE r 3589 A789 WN 1451
Text: 10 5 0 L D E R C H A R G E D E T A IL 1. TIN L E A D HOUSING M A T E R IA L : PARTS HIGH P E R F O R M A N C E A L L O Y S O L D E R N A IL N A T L : S T A IN L E S S STEEL SO LD ER CHARGE N A T L: S E E CHART H A V E SO LD E R C H ANNELS TYP LCP, G L A S S F IL L E D , U L 9 4 V - 0 , B L A C K
|
OCR Scan
|
PS-45802-001
PS-45499-002
PK-45802-001
PK-45802-002
SD-45802-0002
JEDEC tray standard dimension
CN MEZZANINE
r 3589
A789
WN 1451
|
PDF
|
PE148A
Abstract: SFJ450B PE155S SFU450C SFU470B HT150S Uniden scanner HT30FR BN148A HT164A
Text: Sigflex Phone & Radio Antennas Portable Radio Antennas How often have you seen bent or broken antennas on phones or radios? W ere these instruments still working? Cushcraft has solved the problem by developing the Sigflex portable antenna. W hether you're making cellular calls from your home or trekking through the brush,
|
OCR Scan
|
wirD800RE
MD800RC
MX800RE
MX800RC
SF800RE
SF800RC
SFJ800RE
SFJ800RC
SFU800RE
SFU800RC
PE148A
SFJ450B
PE155S
SFU450C
SFU470B
HT150S
Uniden scanner
HT30FR
BN148A
HT164A
|
PDF
|
TF-450
Abstract: TF-459 TF-474 TF-435 TF-438 TF-492 tN494 TF480 TF-429 tf423
Text: NARROWBAND SP4T SWITCH REFLECTIVE AND ABSORPTIVE 0.02-18 GHz SERIES TF-4/TN-4-A GENERAL INFORMATION: Series TF-4 and TN-4-A narrowband switches are medium power devices that operate over commonly used frequency ranges. Carefully selected diodes placed in either series, serles-shunt, or shunt configurations pro
|
OCR Scan
|
|
PDF
|
QML-38535
Abstract: 320C80-50 17306A TIL Display SMD AH MRI circuit xxmx
Text: REVISIONS LTR DESCRIPTION DATE APPROVED YR-MO-DA REV SHEET 55 56 57 58 59 60 61 62 63 64 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 1 2 3 4 5 6 7 8 9 10 11 12 13 14 REV SHEET REV
|
OCR Scan
|
|
PDF
|
