diode 27c
Abstract: TN3012L b0704
Text: TN3012L Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary V BR DSS Min (V) rDS(on) Max (W) 12 @ VGS = 10 V 300 20 @ VGS = 4.5 V VGS(th) (V) ID (A) 0.8 to 3 0.18 Features Benefits Applications D D D D D D D D D D D HighĆVoltage Drivers: Relays, Solenoids,
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TN3012L
O226AA
O226AA)
P-37409--Rev.
diode 27c
TN3012L
b0704
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TN3012L
Abstract: 70206
Text: TN3012L Vishay Siliconix N-Channel 300-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 0.8 to 3 0.18 12 @ VGS = 10 V 300 20 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,
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TN3012L
O-226AA
O-226AA)
S-04279--Rev.
16-Jul-01
TN3012L
70206
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Untitled
Abstract: No abstract text available
Text: TN3012L Vishay Siliconix N-Channel 300-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS M in (v ) fDSion) Max (Q ) 12 0 V q s 300 20 a Vqs = 4.5 V Id (A) 0.8 to 3 0.18 BENEFITS FEATURES • • • • • VGS(.h)(V) = 1OV APPLICATIONS Low On-Resistance: 9 Q • Low Offset Voltage
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TN3012L
O-226AA
S-04279--
16-Jul-01
O-226AA)
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Untitled
Abstract: No abstract text available
Text: Tem ic TN3012L S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS M in (V) r DS<on) M a x (Q ) ^GSrth) (V) I d (A) 0.8 to 3 0.18 12@ V GS= 1 0 V 300 20 @ VGS * 4.5 V Features Benefits • • • • • •
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TN3012L
-226A
P-37409--Rev.
04-Jul-94
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to-226aa
Abstract: TN3012L
Text: TN3012L N-Channel Enhancement-Mode MOS Transistors Product Summary V BR DSS Min (V) 300 rDS(on) Max (W) 12 @ VGS = 10 V VGS(th) (V) ID (A) 0.8 to 3 0.18 20 @ VGS = 4.5 V Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,
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TN3012L
O-226AA
O-226AA)
P-37409--Rev.
04-Jul-94
to-226aa
TN3012L
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TN3012L
Abstract: No abstract text available
Text: TN3012L N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) 300 rDS(on) Max (W) 12 @ VGS = 10 V VGS(th) (V) ID (A) 0 8 to 3 0.8 0 18 0.18 20 @ VGS = 4.5 V Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,
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TN3012L
O-226AA
O-226AA)
P-37409--Rev.
04-Jul-94
TN3012L
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TN3012L
Abstract: No abstract text available
Text: TN3012L Vishay Siliconix N-Channel 300-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 0.8 to 3 0.18 12 @ VGS = 10 V 300 20 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,
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TN3012L
O-226AA
08-Apr-05
TN3012L
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TN3012L
Abstract: No abstract text available
Text: TN3012L Vishay Siliconix N-Channel 300-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 0.8 to 3 0.18 12 @ VGS = 10 V 300 20 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,
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TN3012L
O-226AA
18-Jul-08
TN3012L
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Untitled
Abstract: No abstract text available
Text: T e m ic TN3012L_ Siliconix N-Channel Enhancement-Mode MOSFET Product Summary V BR DSS Min (V) Max (£2) 12 @ VGS = 10 V 20 @ VGs = 4.5 V rDS(on) 300 Features • • • • • Low On-Resistance: 9 Q Secondary Breakdown Free: 320 V Low Power/Voltage Driven
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TN3012L_
O-226AA
37409--Rev.
TN3012L
P-37409--Rev.
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TN3012L
Abstract: No abstract text available
Text: TN3012L N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) 300 rDS(on) Max (W) 12 @ VGS = 10 V VGS(th) (V) ID (A) 0.8 to 3 0.18 20 @ VGS = 4.5 V Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,
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TN3012L
O-226AA
O-226AA)
P-37409--Rev.
04-Jul-94
TN3012L
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One-chip telephone IC
Abstract: telephone line voice amplifier Voice to e1 converter circuit U 4076 One-chip telephone cordless IC VN2410* mosfet BFP67 slc96 remote terminal E1 PCM encoder V30 CPU
Text: TEMIC Semiconductors Communication Segment Digital Networks Wireless Communication Wired Communication Communication We’ve been supporting advances in communications industry for decades. Today, we continue to offer the best combination of applications knowledge and leading-edge solutions required by the
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29C93A
102/V
V25bis)
PQFP44
29C93A
29C921
80C51
One-chip telephone IC
telephone line voice amplifier
Voice to e1 converter circuit
U 4076
One-chip telephone cordless IC
VN2410* mosfet
BFP67
slc96 remote terminal
E1 PCM encoder
V30 CPU
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mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is
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T0-92
options4206A
ZVN4206C
ZVN4206E
ZVN4306A
TN2106K1
VN2210N3
TN0606N3
TN0606N6
mosfet cross reference
pj 929 diode
pj 1229 diode
BSS250
VN0109N5
pj 66 diode
pj 929
BSS295 "direct replacement"
BSS295 "cross reference"
pj 69 diode
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VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated
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Si4831DY
Si4833DY
Si4852DY
Si4816DY
10Single
VN50300L
VN50300T
OT-23
VN66AFD
VN10KLS
mosfet bs250
Si4730
SUP85N03-04P
VN66AFD
Si4835DY
si5504
SI3459DV
sup65p06
sub75p05
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TEMIC K153P
Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2
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WN1053
WN1087-18R
WN1087-TR1
WN1090
WN1125
WN1142
WN1158-TA
WN1165-TR1
WN1170
WN934
TEMIC K153P
TSHF5471
tfmw5380
dn1328
tdsr5156
dn904
TDSR5153
HS0038 IR sensor
TLVD4900
TCDF1910
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