Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TN28F010150 Search Results

    TN28F010150 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TN28F010-150-G Rochester Electronics LLC 28F010 - 128K X 8 Flash Visit Rochester Electronics LLC Buy
    SF Impression Pixel

    TN28F010150 Price and Stock

    Rochester Electronics LLC TN28F010-150-G

    TN28F010-150-G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TN28F010-150-G Bulk 9
    • 1 -
    • 10 $36.51
    • 100 $36.51
    • 1000 $36.51
    • 10000 $36.51
    Buy Now
    Rochester Electronics TN28F010-150-G 3,866 1
    • 1 $35.11
    • 10 $35.11
    • 100 $33
    • 1000 $29.84
    • 10000 $29.84
    Buy Now

    Intel Corporation TN28F010150

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics TN28F010150 70
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    Intel Corporation TN28F010-150

    IC,EEPROM,NOR FLASH,128KX8,CMOS,LDCC,32PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TN28F010-150 462
    • 1 $50
    • 10 $50
    • 100 $50
    • 1000 $37.5
    • 10000 $37.5
    Buy Now
    TN28F010-150 81
    • 1 $7.41
    • 10 $7.41
    • 100 $4.5695
    • 1000 $4.5695
    • 10000 $4.5695
    Buy Now
    TN28F010-150 4
    • 1 $17.4159
    • 10 $16.2548
    • 100 $16.2548
    • 1000 $16.2548
    • 10000 $16.2548
    Buy Now
    Velocity Electronics TN28F010-150 5
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    TN28F010150 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TN28F010-150 Intel 28F010 1024K (128K x 8) CMOS FLASH MEMORY Original PDF

    TN28F010150 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    28F010

    Abstract: TN28F010 N28F010-120 TN28F010-120 1N914 80C186 tn28f010-150 PLCC pin configuration 80c186 29020
    Text: E 28F010 1024K 128K X 8 CMOS FLASH MEMORY 8 n n n n n n n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  2 Second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% V PP


    Original
    PDF 28F010 1024K 28F010 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 N28F010-120 TN28F010 N28F010-120 TN28F010-120 1N914 80C186 tn28f010-150 PLCC pin configuration 80c186 29020

    29F020

    Abstract: 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 28F010 80C186 E28F010 N28F010
    Text: E 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 n n n n n n n Flash Electrical Chip-Erase  1-Mbit: 1 Second Typical Chip-Erase  2-Mbit: 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  1-Mbit: 1 Second Chip-Program


    Original
    PDF 28F010 28F020 32-Lead P28F010-90 P28F010-120 P28F010-150 TN28F010-90 TN28F010-120 TN28F010-150 TP28F010-90 29F020 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 80C186 E28F010 N28F010

    TN80C196KC20

    Abstract: TE28F800B3TA120 N80C51FA1 TN80C196KB16 N80C31BH1 TE28F008B3T115 N80C196KC20 DT28F320S5-90 TE28F160F3T120 N80C3224
    Text: Product Change Notification Please respond to your distributor if you have any issues with the timeline or content of this change. No response from customers will be deemed as acceptance of the change and the change will be implemented pursuant to the key milestones set forth in this attached PCN.


    Original
    PDF PLCC44 PLCC68 TN80C196KC20 TE28F800B3TA120 N80C51FA1 TN80C196KB16 N80C31BH1 TE28F008B3T115 N80C196KC20 DT28F320S5-90 TE28F160F3T120 N80C3224

    TN28F010-120

    Abstract: 28F010 N28F010-120 TN28F010 intel 28F010 1N914 80C186 n28f010-150 TP28F010
    Text: E 28F010 1024K 128K X 8 CMOS FLASH MEMORY 8 n n n n n n n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  2 Second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% V PP


    Original
    PDF 28F010 1024K 28F010 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 N28F010-120 TN28F010-120 N28F010-120 TN28F010 intel 28F010 1N914 80C186 n28f010-150 TP28F010

    Untitled

    Abstract: No abstract text available
    Text: 28F010 1024K 128K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 [is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp


    OCR Scan
    PDF 28F010 1024K 32-Pin 32-Lead

    29F020

    Abstract: 28F010 28F020 80C186 E28F010 N28F010 P28F010 29020
    Text: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/M icrocontroller Compatible Write Interface


    OCR Scan
    PDF 28F010 28F020 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 E28F010-150 TE28F010-90 29F020 28F020 80C186 E28F010 N28F010 P28F010 29020