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Abstract: No abstract text available
Text: TN2529 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device
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TN2529
TN2529
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TN2529
Abstract: No abstract text available
Text: TN2529 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2529 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si
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TN2529
TN2529
A020309
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125OC
Abstract: TN2529 TN2529K6-G
Text: TN2529 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
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TN2529
TN2529
125pF
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NR061107
125OC
TN2529K6-G
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Untitled
Abstract: No abstract text available
Text: TN2529 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
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TN2529
125pF
DSFP-TN2529
A111407
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125OC
Abstract: TN2529 TN2529K6-G
Text: TN2529 N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate
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TN2529
TN2529
125pF
DSFP-TN2529
A091608
125OC
TN2529K6-G
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TN2529
Abstract: No abstract text available
Text: Supertex inc. TN2529 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2529 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description
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TN2529
TN2529
A031610
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TO243AA
Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Text: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G
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2N7000-G
2N7002-G
DN1509N8-G
DN2470K4-G
DN2530N3-G
DN2530N8-G
DN2535N3-G
DN2535N5-G
DN2540N3-G
DN2540N5-G
TO243AA
TO-243AA
tn0604n
TO-236AB
oc sot-89
TC2320TG
TN2130K1-G
LND150N8-G
VN0104N3-G
TO-236-AB
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TN2524
Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110
Text: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs BVDSS Device V RDS(ON) max ID(ON) min (Ω) CISS max (A) (pF) VGS(TH) max (V) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2)
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2N6660
2N6661
2N7000
2N7002
OT-23
2N7008
TN0104
TN0106
TN0110
VN2406
TN2524
SOT-89 N2
2N6660
2N6661
2N7000
2N7002
2N7008
TN0104
TN0106
TN0110
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N2 SOT-23
Abstract: wg 252 2N6660 SOT-89 N2 TO-92 TN0604 equivalent TN2524 to-39 supertex VN0808 VN10K
Text: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs Device BVDSS V (max Ω) (min A) (max pF) (max V) VGS(TH) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N7000 60
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2N6660
2N6661
2N7000
2N7002
OT-23
2N7008
TN0104
TN0106
TN0110
TN0604
N2 SOT-23
wg 252
2N6660
SOT-89 N2
TO-92
TN0604 equivalent
TN2524
to-39 supertex
VN0808
VN10K
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HV9961
Abstract: 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509
Text: Supertex inc. Short Form Catalog 2011 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
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product25
HV9961
2N7002 MARKING 1702
HV9963
HV9910
hv9910b
SR087
str 6655
STR 6656
DN2450
HV509
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STR 6656
Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
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ic str wg 252
Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
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