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    TM 2620 Search Results

    TM 2620 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10137926-2012LF Amphenol Communications Solutions Minitek® Pwr 3.0, Dual Row, Vertical SMT Tails and Hold Down Header, Tin plating, Black Color, 20 Positions, Non GW Compatible LCP, Tape and Reel with cap. Visit Amphenol Communications Solutions
    61083-062620LF Amphenol Communications Solutions BergStak® 0.80mm Pitch, Mezzanine Connector, Vertical Header, Double Row, 60 Positions. Visit Amphenol Communications Solutions
    10008026-201 Amphenol Communications Solutions GIG-Array®, Mezzanine Connectors, 13mm Plug 296 Position. Visit Amphenol Communications Solutions
    10122526-2030LF Amphenol Communications Solutions Mini-SAS HD Cable Assemblies, High Speed Input Output Connectors, 4x Mini-SAS HD Short Housing to Mini-SAS 36pin Straight type passive internal cable assembly, 6Gbps, Controller to Backplane, 30AWG, 0.3meter. Visit Amphenol Communications Solutions
    7334L2620F02LF Amphenol Communications Solutions Smart Card Reader, Input Output Connectors, Connectors for Friendly Environment, 8 contacts, Raised, Underneath clearance 5.5 mm, Low cycle, Lead Free. Visit Amphenol Communications Solutions
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    TM 2620 Price and Stock

    Infineon Technologies AG IPG20N06S4L14AATMA1

    MOSFETs MOSFET_)40V 60V)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPG20N06S4L14AATMA1 7,564
    • 1 $0.9
    • 10 $0.743
    • 100 $0.656
    • 1000 $0.555
    • 10000 $0.531
    Buy Now

    Infineon Technologies AG IPG20N10S4L35AATMA1

    MOSFETs MOSFET_(75V 120V(
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPG20N10S4L35AATMA1 4,980
    • 1 $1.37
    • 10 $1.08
    • 100 $0.758
    • 1000 $0.572
    • 10000 $0.516
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    Infineon Technologies AG IPG20N04S4L11AATMA1

    MOSFETs MOSFET_(20V 40V)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPG20N04S4L11AATMA1 4,794
    • 1 $1.07
    • 10 $0.745
    • 100 $0.606
    • 1000 $0.472
    • 10000 $0.406
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    Infineon Technologies AG IPG20N10S4L22AATMA1

    MOSFETs MOSFET_(75V 120V(
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPG20N10S4L22AATMA1 2,979
    • 1 $1.82
    • 10 $1.23
    • 100 $0.942
    • 1000 $0.695
    • 10000 $0.667
    Buy Now

    ams OSRAM Group TMD26203M

    Proximity Sensors ALS/COLOR/PROX
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TMD26203M 1,278
    • 1 $1.88
    • 10 $1.57
    • 100 $1.49
    • 1000 $1.15
    • 10000 $1.11
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    TM 2620 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    70F3017A

    Abstract: PU106 V850 U15673E uPD703014B uPD703014BY uPD703015B uPD703015BY WT470 v850 architecture CR10
    Text: User’s Manual TM V850/SA1 32-Bit Single-chip Microcontroller Hardware µPD703014A µPD703014AY µPD703014B µPD703014BY µPD703015A µPD703015AY µPD703015B µPD703015BY µPD703017A µPD703017AY µPD70F3015B µPD70F3015BY µPD70F3017A µPD70F3017AY Document No. U12768EJ4V0UD00 4th edition


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    V850/SA1 32-Bit PD703014A PD703014AY PD703014B PD703014BY PD703015A PD703015AY PD703015B PD703015BY 70F3017A PU106 V850 U15673E uPD703014B uPD703014BY uPD703015B uPD703015BY WT470 v850 architecture CR10 PDF

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual TM V850/SA1 32-/16-Bit Single-chip Microcontroller Hardware µPD703014A µPD703014AY µPD703015A µPD703015AY µPD703017A µPD703017AY µPD70F3017A µPD70F3017AY Document No. U12768EJ3V0UMJ1 3rd edition Date Published September 2000 N CP(K)


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    V850/SA1 32-/16-Bit PD703014A PD703014AY PD703015A PD703015AY PD703017A PD703017AY PD70F3017A PD70F3017AY PDF

    uhf linear amplifier module MAV-11

    Abstract: mini circuits 15542 zhl 1042j mini circuits 15542 zem-4300 VCO MCL POS-1060 ups circuit schematic diagram 1000w 15542 ZAPD-2 MINI-CIRCUIT 15542 model no zhl-1-2w mcl sbl-1 MIXER mini circuits 15542 ZFM sim 900A
    Text: IF RF MICROWAVE COMPONENTS GUIDE TM SF/2010 finds the model you need, Instantly. For pricing / availability, complete specifications, data sheets, RoHS compatibility, performance data /curves, pcb layouts, drawings shopping online, see minicircuits.com


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    SF/2010 uhf linear amplifier module MAV-11 mini circuits 15542 zhl 1042j mini circuits 15542 zem-4300 VCO MCL POS-1060 ups circuit schematic diagram 1000w 15542 ZAPD-2 MINI-CIRCUIT 15542 model no zhl-1-2w mcl sbl-1 MIXER mini circuits 15542 ZFM sim 900A PDF

    Microcontroller Handbook

    Abstract: power amplifier 3000W with PCB
    Text: Beratung und Vertrieb: SF/2010 IF RF MICROWAVE COMPONENTS GUIDE TM finds the model you need, Instantly. For pricing / availability, complete specifications, data sheets, RoHS compatibility, performance data /curves, pcb layouts, drawings shopping online, see minicircuits.com


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    SF/2010 Microcontroller Handbook power amplifier 3000W with PCB PDF

    UPD703033

    Abstract: 155tm2 veriable resistor uPD703033Y uPD70F3033 uPD70F3033Y 703033 bipolar stepping motor 70F3033
    Text: Preliminary User’s Manual TM V850/SB1 32-/16-Bit Single-chip Microcontroller Hardware µPD703033 µPD703033Y µPD70F3033 µPD70F3033Y Document No. U13568EJ1V0UM00 1st edition Date Published October 1998 N CP(K) 1998 Printed in Japan [MEMO] 2 NOTES FOR CMOS DEVICES


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    V850/SB1 32-/16-Bit PD703033 PD703033Y PD70F3033 PD70F3033Y U13568EJ1V0UM00 usi88-6130 UPD703033 155tm2 veriable resistor uPD703033Y uPD70F3033 uPD70F3033Y 703033 bipolar stepping motor 70F3033 PDF

    AWT6628

    Abstract: No abstract text available
    Text: AWT6628 HELP4 UMTS900 Band 8 WCDMA 28.5 dBm Linear PAM TM PRELIMINARY DATA SHEET - Rev 2.0 FEATURES • HSPA Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): • 39 % @ POUT = +28.5 dBm • 26 % @ POUT = +17 dBm AWT6628


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    UMTS900 AWT6628 AWT6628 PDF

    pin DIAGRAM OF DIP8 TOP 244 PN

    Abstract: nec PU106 PU106 uPD703033Y uPD70F3033 uPD70F3033Y UPD703033GC 70F3033 TM1 154 pin DIAGRAM OF DIP8 TOP 243 PN
    Text: Preliminary User’s Manual TM V850/SB1 32-/16-Bit Single-chip Microcontroller Hardware µPD703033 µPD703033Y µPD70F3033 µPD70F3033Y Document No. U13568EJ1V0UM00 1st edition Date Published October 1998 N CP(K) 1998 Printed in Japan [MEMO] 2 NOTES FOR CMOS DEVICES


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    V850/SB1 32-/16-Bit PD703033 PD703033Y PD70F3033 PD70F3033Y U13568EJ1V0UM00 usi88-6130 pin DIAGRAM OF DIP8 TOP 244 PN nec PU106 PU106 uPD703033Y uPD70F3033 uPD70F3033Y UPD703033GC 70F3033 TM1 154 pin DIAGRAM OF DIP8 TOP 243 PN PDF

    AWT6628

    Abstract: HSPA Module marking R99
    Text: AWT6628 HELP4 UMTS900 Band 8 WCDMA 28.7 dBm Linear PAM TM PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • HSPA Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): AWT6628 40 % @ POUT = +28.7 dBm 26 % @ POUT = +17 dBm 17 % @ POUT = +13.5 dBm


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    AWT6628 UMTS900 AWT6628 HSPA Module marking R99 PDF

    Untitled

    Abstract: No abstract text available
    Text: UniFET TM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V


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    FDP51N25 FDPF51N25 FDPF51N25 PDF

    Untitled

    Abstract: No abstract text available
    Text: AWT6625 HELP4 UMTS850 Band 5 CDMA/WCDMA 28.5 dBm Linear PAM TM PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • Mixed-Mode (HSPA, EV-DO Compliant) • 4th Generation HELPTM technology • High Efficiency (R99): AWT6625 41 % @ POUT = +28.4 dBm 25 % @ POUT = +17 dBm


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    AWT6625 UMTS850 PDF

    FDPF79N15

    Abstract: FDP79N15
    Text: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V


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    FDP79N15 FDPF79N15 O-220 FDPF79N15 PDF

    td lte

    Abstract: No abstract text available
    Text: HELP3DC TM AWT6631 UMTS2100 Band 1 LTE/WCDMA/CDMA/TD-SCDMA Linear PAM Data Sheet - Rev 2.7 FEATURES • CDMA/EVDO, WCDMA/HSPA, LTE and TD-SCDMA Compliant • 3rd Generation HELPTM technology • High Efficiency (R99 waveform): • 41 % @ POUT = +28.25 dBm


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    UMTS2100 AWT6631 td lte PDF

    51a marking

    Abstract: FDPF51N25
    Text: UniFET FDPF51N25 TM 28A, 250V N-Channel MOSFET Features Description • RDS on = 0.060 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistorsare produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 55 nC)


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    FDPF51N25 O-220F FDPF51N25 51a marking PDF

    Untitled

    Abstract: No abstract text available
    Text: ALT6705 HELP4 UMTS800 Bands 5, 6, 18, 19, & 26 LTE, WCDMA, CDMA Multimode PAM TM Data Sheet- Rev 2.2 FEATURES • Multimode (LTE, HSPA, EV-DO Compliant) • 4th Generation HELPTM technology • High Efficiency (R99 waveform): • 40 % @ POUT = +28.4 dBm


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    UMTS800 ALT6705 PDF

    Untitled

    Abstract: No abstract text available
    Text: HELP4 AWT6628A UMTS900 Band 8 WCDMA Linear PAM TM Data Sheet - Rev 2.4 FEATURES • HSPA Compliant • 4th Generation HELPTM technology • High Efficiency (R99): • 40 % @ POUT = +28.9 dBm • 26 % @ POUT = +17 dBm AWT6628A • 17 % @ POUT = +13.5 dBm


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    UMTS900 AWT6628A PDF

    Untitled

    Abstract: No abstract text available
    Text: ALT6705 TM HELP4 UMTS800 Bands 5, 6, 18, 19, & 26 LTE, WCDMA, CDMA Multimode PAM Data Sheet - Rev 2.5 FEATURES • Multimode (LTE, HSPA, EV-DO Compliant) • 4th Generation HELPTM technology • High Eficiency (R99 waveform): ALT6705 • 40 % @ POUT = +28.4 dBm


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    ALT6705 UMTS800 PDF

    LTE band 40

    Abstract: 6705R
    Text: ALT6705 HELP4 UMTS800 Bands 5, 6, 18, 19, & 26 LTE, WCDMA, CDMA Multimode PAM TM Data Sheet - Rev 2.5 FEATURES • Multimode (LTE, HSPA, EV-DO Compliant) • 4th Generation HELPTM technology • High Efficiency (R99 waveform): • 40 % @ POUT = +28.4 dBm


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    UMTS800 ALT6705 LTE band 40 6705R PDF

    FDP79N15

    Abstract: FDPF79N15
    Text: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V


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    FDP79N15 FDPF79N15 O-220 FDPF79N15 PDF

    Untitled

    Abstract: No abstract text available
    Text: HELP4 AWT6628A UMTS900 Band 8 WCDMA Linear PAM TM Data Sheet - Rev 2.2 FEATURES • HSPA Compliant • 4th Generation HELPTM technology • High Efficiency (R99): • 40 % @ POUT = +28.9 dBm • 26 % @ POUT = +17 dBm AWT6628A • 17 % @ POUT = +13.5 dBm


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    UMTS900 AWT6628A PDF

    AT2110

    Abstract: No abstract text available
    Text: HELP3DC TM AWT6631 UMTS2100 Band 1 LTE/WCDMA/CDMA/TD-SCDMA Linear PAM Data Sheet - Rev 2.6 FEATURES • CDMA/EVDO, WCDMA/HSPA, LTE and TD-SCDMA Compliant • 3rd Generation HELPTM technology • High Efficiency (R99 waveform): • 41 % @ POUT = +28.25 dBm


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    UMTS2100 AWT6631 AT2110 PDF

    Burndy PAT750-18V parts breakdown

    Abstract: BURN GI CONDUIT lp 1610 for door bell Burndy Y35 hypress parts breakdown ci an 7591 NEC c317 KPC 45 94V SAE-AS7928 burndy Y35 Hypress owner manual burndy patriot pat750-18v replacement parts
    Text: Master Catalog Solutions for the Electrical Industry Experience. Technology. Answers. TM Customer Service Department 7 Aviation Park Drive Londonderry, NH 03053 1-800-346-4175 1-603-647-5299 International Canada 1-800-361-6975 (Quebec) 1-800-387-6487 (All other provinces)


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    PDF

    UMTS900

    Abstract: No abstract text available
    Text: HELP4 AWT6628A UMTS900 Band 8 WCDMA Linear PAM TM Data Sheet - Rev 2.0 FEATURES • HSPA Compliant • 4th Generation HELPTM technology • High Efficiency (R99): • 40 % @ POUT = +28.8 dBm • 26 % @ POUT = +17 dBm AWT6628A • 17 % @ POUT = +13.5 dBm


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    UMTS900 AWT6628A UMTS900 PDF

    Untitled

    Abstract: No abstract text available
    Text: AWT6625 HELP4 UMTS850 Band 5 CDMA/WCDMA 28.5 dBm Linear PAM TM PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • Mixed-Mode (HSPA, EV-DO Compliant) • 4th Generation HELPTM technology • High Efficiency (R99): AWT6625 41 % @ POUT = +28.4 dBm 25 % @ POUT = +17 dBm


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    UMTS850 AWT6625 PDF

    UMTS1900

    Abstract: No abstract text available
    Text: AWT6622 HELP4 UMTS1900 Band 2 CDMA/WCDMA 28.6 dBm Linear PAM TM DATA SHEET - Rev 2.4 FEATURES • Mixed-Mode (HSPA, EV-DO compliant) • 4th Generation HELPTM technology • High Efficiency (R99 waveform): • 40 % @ POUT = +28.6 dBm • 34 % @ POUT = +17 dBm


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    UMTS1900 AWT6622 UMTS1900 PDF