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    TM 2620 Search Results

    TM 2620 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HS9-22620RH-Q Renesas Electronics Corporation Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier Visit Renesas Electronics Corporation
    SLG55026-200300V Renesas Electronics Corporation High Voltage Gate Driver Visit Renesas Electronics Corporation
    R5S72620W144FP#U0 Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
    HA2-2620-2 Renesas Electronics Corporation 100MHz, High Input Impedance, Very Wideband, Uncompensated Operational Amplifiers Visit Renesas Electronics Corporation
    R5S72620P144FP#UZ Renesas Electronics Corporation 32-bit Microcontrollers Visit Renesas Electronics Corporation
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    TM 2620 Price and Stock

    Infineon Technologies AG IPG20N06S4L14AATMA1

    MOSFETs MOSFET_)40V 60V)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPG20N06S4L14AATMA1 7,567
    • 1 $0.78
    • 10 $0.778
    • 100 $0.688
    • 1000 $0.555
    • 10000 $0.531
    Buy Now

    Infineon Technologies AG IPG20N10S4L35AATMA1

    MOSFETs MOSFET_(75V 120V(
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPG20N10S4L35AATMA1 4,980
    • 1 $1.37
    • 10 $1.08
    • 100 $0.758
    • 1000 $0.572
    • 10000 $0.516
    Buy Now

    Infineon Technologies AG IPG20N04S4L11AATMA1

    MOSFETs MOSFET_(20V 40V)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPG20N04S4L11AATMA1 4,819
    • 1 $1.07
    • 10 $0.771
    • 100 $0.606
    • 1000 $0.472
    • 10000 $0.406
    Buy Now

    Infineon Technologies AG IPG20N10S4L22AATMA1

    MOSFETs MOSFET_(75V 120V(
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IPG20N10S4L22AATMA1 2,990
    • 1 $1.82
    • 10 $1.23
    • 100 $0.942
    • 1000 $0.695
    • 10000 $0.667
    Buy Now

    ams OSRAM Group TMD26203M

    Proximity Sensors TMD26203M OLGA8 LF T&RDP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TMD26203M 1,328
    • 1 $1.88
    • 10 $1.57
    • 100 $1.49
    • 1000 $1.11
    • 10000 $1.08
    Buy Now

    TM 2620 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    70F3017A

    Abstract: PU106 V850 U15673E uPD703014B uPD703014BY uPD703015B uPD703015BY WT470 v850 architecture CR10
    Text: User’s Manual TM V850/SA1 32-Bit Single-chip Microcontroller Hardware µPD703014A µPD703014AY µPD703014B µPD703014BY µPD703015A µPD703015AY µPD703015B µPD703015BY µPD703017A µPD703017AY µPD70F3015B µPD70F3015BY µPD70F3017A µPD70F3017AY Document No. U12768EJ4V0UD00 4th edition


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    V850/SA1 32-Bit PD703014A PD703014AY PD703014B PD703014BY PD703015A PD703015AY PD703015B PD703015BY 70F3017A PU106 V850 U15673E uPD703014B uPD703014BY uPD703015B uPD703015BY WT470 v850 architecture CR10 PDF

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual TM V850/SA1 32-/16-Bit Single-chip Microcontroller Hardware µPD703014A µPD703014AY µPD703015A µPD703015AY µPD703017A µPD703017AY µPD70F3017A µPD70F3017AY Document No. U12768EJ3V0UMJ1 3rd edition Date Published September 2000 N CP(K)


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    V850/SA1 32-/16-Bit PD703014A PD703014AY PD703015A PD703015AY PD703017A PD703017AY PD70F3017A PD70F3017AY PDF

    uhf linear amplifier module MAV-11

    Abstract: mini circuits 15542 zhl 1042j mini circuits 15542 zem-4300 VCO MCL POS-1060 ups circuit schematic diagram 1000w 15542 ZAPD-2 MINI-CIRCUIT 15542 model no zhl-1-2w mcl sbl-1 MIXER mini circuits 15542 ZFM sim 900A
    Text: IF RF MICROWAVE COMPONENTS GUIDE TM SF/2010 finds the model you need, Instantly. For pricing / availability, complete specifications, data sheets, RoHS compatibility, performance data /curves, pcb layouts, drawings shopping online, see minicircuits.com


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    SF/2010 uhf linear amplifier module MAV-11 mini circuits 15542 zhl 1042j mini circuits 15542 zem-4300 VCO MCL POS-1060 ups circuit schematic diagram 1000w 15542 ZAPD-2 MINI-CIRCUIT 15542 model no zhl-1-2w mcl sbl-1 MIXER mini circuits 15542 ZFM sim 900A PDF

    Microcontroller Handbook

    Abstract: power amplifier 3000W with PCB
    Text: Beratung und Vertrieb: SF/2010 IF RF MICROWAVE COMPONENTS GUIDE TM finds the model you need, Instantly. For pricing / availability, complete specifications, data sheets, RoHS compatibility, performance data /curves, pcb layouts, drawings shopping online, see minicircuits.com


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    SF/2010 Microcontroller Handbook power amplifier 3000W with PCB PDF

    UPD703033

    Abstract: 155tm2 veriable resistor uPD703033Y uPD70F3033 uPD70F3033Y 703033 bipolar stepping motor 70F3033
    Text: Preliminary User’s Manual TM V850/SB1 32-/16-Bit Single-chip Microcontroller Hardware µPD703033 µPD703033Y µPD70F3033 µPD70F3033Y Document No. U13568EJ1V0UM00 1st edition Date Published October 1998 N CP(K) 1998 Printed in Japan [MEMO] 2 NOTES FOR CMOS DEVICES


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    V850/SB1 32-/16-Bit PD703033 PD703033Y PD70F3033 PD70F3033Y U13568EJ1V0UM00 usi88-6130 UPD703033 155tm2 veriable resistor uPD703033Y uPD70F3033 uPD70F3033Y 703033 bipolar stepping motor 70F3033 PDF

    AWT6628

    Abstract: No abstract text available
    Text: AWT6628 HELP4 UMTS900 Band 8 WCDMA 28.5 dBm Linear PAM TM PRELIMINARY DATA SHEET - Rev 2.0 FEATURES • HSPA Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): • 39 % @ POUT = +28.5 dBm • 26 % @ POUT = +17 dBm AWT6628


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    UMTS900 AWT6628 AWT6628 PDF

    pin DIAGRAM OF DIP8 TOP 244 PN

    Abstract: nec PU106 PU106 uPD703033Y uPD70F3033 uPD70F3033Y UPD703033GC 70F3033 TM1 154 pin DIAGRAM OF DIP8 TOP 243 PN
    Text: Preliminary User’s Manual TM V850/SB1 32-/16-Bit Single-chip Microcontroller Hardware µPD703033 µPD703033Y µPD70F3033 µPD70F3033Y Document No. U13568EJ1V0UM00 1st edition Date Published October 1998 N CP(K) 1998 Printed in Japan [MEMO] 2 NOTES FOR CMOS DEVICES


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    V850/SB1 32-/16-Bit PD703033 PD703033Y PD70F3033 PD70F3033Y U13568EJ1V0UM00 usi88-6130 pin DIAGRAM OF DIP8 TOP 244 PN nec PU106 PU106 uPD703033Y uPD70F3033 uPD70F3033Y UPD703033GC 70F3033 TM1 154 pin DIAGRAM OF DIP8 TOP 243 PN PDF

    AWT6628

    Abstract: HSPA Module marking R99
    Text: AWT6628 HELP4 UMTS900 Band 8 WCDMA 28.7 dBm Linear PAM TM PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • HSPA Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): AWT6628 40 % @ POUT = +28.7 dBm 26 % @ POUT = +17 dBm 17 % @ POUT = +13.5 dBm


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    AWT6628 UMTS900 AWT6628 HSPA Module marking R99 PDF

    Untitled

    Abstract: No abstract text available
    Text: UniFET TM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS on = 0.06Ω @VGS = 10 V


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    FDP51N25 FDPF51N25 FDPF51N25 PDF

    Untitled

    Abstract: No abstract text available
    Text: AWT6625 HELP4 UMTS850 Band 5 CDMA/WCDMA 28.5 dBm Linear PAM TM PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • Mixed-Mode (HSPA, EV-DO Compliant) • 4th Generation HELPTM technology • High Efficiency (R99): AWT6625 41 % @ POUT = +28.4 dBm 25 % @ POUT = +17 dBm


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    AWT6625 UMTS850 PDF

    FDPF79N15

    Abstract: FDP79N15
    Text: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V


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    FDP79N15 FDPF79N15 O-220 FDPF79N15 PDF

    td lte

    Abstract: No abstract text available
    Text: HELP3DC TM AWT6631 UMTS2100 Band 1 LTE/WCDMA/CDMA/TD-SCDMA Linear PAM Data Sheet - Rev 2.7 FEATURES • CDMA/EVDO, WCDMA/HSPA, LTE and TD-SCDMA Compliant • 3rd Generation HELPTM technology • High Efficiency (R99 waveform): • 41 % @ POUT = +28.25 dBm


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    UMTS2100 AWT6631 td lte PDF

    51a marking

    Abstract: FDPF51N25
    Text: UniFET FDPF51N25 TM 28A, 250V N-Channel MOSFET Features Description • RDS on = 0.060 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistorsare produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 55 nC)


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    FDPF51N25 O-220F FDPF51N25 51a marking PDF

    Untitled

    Abstract: No abstract text available
    Text: ALT6705 HELP4 UMTS800 Bands 5, 6, 18, 19, & 26 LTE, WCDMA, CDMA Multimode PAM TM Data Sheet- Rev 2.2 FEATURES • Multimode (LTE, HSPA, EV-DO Compliant) • 4th Generation HELPTM technology • High Efficiency (R99 waveform): • 40 % @ POUT = +28.4 dBm


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    UMTS800 ALT6705 PDF

    Untitled

    Abstract: No abstract text available
    Text: HELP4 AWT6628A UMTS900 Band 8 WCDMA Linear PAM TM Data Sheet - Rev 2.4 FEATURES • HSPA Compliant • 4th Generation HELPTM technology • High Efficiency (R99): • 40 % @ POUT = +28.9 dBm • 26 % @ POUT = +17 dBm AWT6628A • 17 % @ POUT = +13.5 dBm


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    UMTS900 AWT6628A PDF

    Untitled

    Abstract: No abstract text available
    Text: ALT6705 TM HELP4 UMTS800 Bands 5, 6, 18, 19, & 26 LTE, WCDMA, CDMA Multimode PAM Data Sheet - Rev 2.5 FEATURES • Multimode (LTE, HSPA, EV-DO Compliant) • 4th Generation HELPTM technology • High Eficiency (R99 waveform): ALT6705 • 40 % @ POUT = +28.4 dBm


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    ALT6705 UMTS800 PDF

    LTE band 40

    Abstract: 6705R
    Text: ALT6705 HELP4 UMTS800 Bands 5, 6, 18, 19, & 26 LTE, WCDMA, CDMA Multimode PAM TM Data Sheet - Rev 2.5 FEATURES • Multimode (LTE, HSPA, EV-DO Compliant) • 4th Generation HELPTM technology • High Efficiency (R99 waveform): • 40 % @ POUT = +28.4 dBm


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    UMTS800 ALT6705 LTE band 40 6705R PDF

    FDP79N15

    Abstract: FDPF79N15
    Text: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V


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    FDP79N15 FDPF79N15 O-220 FDPF79N15 PDF

    Untitled

    Abstract: No abstract text available
    Text: HELP4 AWT6628A UMTS900 Band 8 WCDMA Linear PAM TM Data Sheet - Rev 2.2 FEATURES • HSPA Compliant • 4th Generation HELPTM technology • High Efficiency (R99): • 40 % @ POUT = +28.9 dBm • 26 % @ POUT = +17 dBm AWT6628A • 17 % @ POUT = +13.5 dBm


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    UMTS900 AWT6628A PDF

    AT2110

    Abstract: No abstract text available
    Text: HELP3DC TM AWT6631 UMTS2100 Band 1 LTE/WCDMA/CDMA/TD-SCDMA Linear PAM Data Sheet - Rev 2.6 FEATURES • CDMA/EVDO, WCDMA/HSPA, LTE and TD-SCDMA Compliant • 3rd Generation HELPTM technology • High Efficiency (R99 waveform): • 41 % @ POUT = +28.25 dBm


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    UMTS2100 AWT6631 AT2110 PDF

    Burndy PAT750-18V parts breakdown

    Abstract: BURN GI CONDUIT lp 1610 for door bell Burndy Y35 hypress parts breakdown ci an 7591 NEC c317 KPC 45 94V SAE-AS7928 burndy Y35 Hypress owner manual burndy patriot pat750-18v replacement parts
    Text: Master Catalog Solutions for the Electrical Industry Experience. Technology. Answers. TM Customer Service Department 7 Aviation Park Drive Londonderry, NH 03053 1-800-346-4175 1-603-647-5299 International Canada 1-800-361-6975 (Quebec) 1-800-387-6487 (All other provinces)


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    PDF

    UMTS900

    Abstract: No abstract text available
    Text: HELP4 AWT6628A UMTS900 Band 8 WCDMA Linear PAM TM Data Sheet - Rev 2.0 FEATURES • HSPA Compliant • 4th Generation HELPTM technology • High Efficiency (R99): • 40 % @ POUT = +28.8 dBm • 26 % @ POUT = +17 dBm AWT6628A • 17 % @ POUT = +13.5 dBm


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    UMTS900 AWT6628A UMTS900 PDF

    Untitled

    Abstract: No abstract text available
    Text: AWT6625 HELP4 UMTS850 Band 5 CDMA/WCDMA 28.5 dBm Linear PAM TM PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • Mixed-Mode (HSPA, EV-DO Compliant) • 4th Generation HELPTM technology • High Efficiency (R99): AWT6625 41 % @ POUT = +28.4 dBm 25 % @ POUT = +17 dBm


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    UMTS850 AWT6625 PDF

    UMTS1900

    Abstract: No abstract text available
    Text: AWT6622 HELP4 UMTS1900 Band 2 CDMA/WCDMA 28.6 dBm Linear PAM TM DATA SHEET - Rev 2.4 FEATURES • Mixed-Mode (HSPA, EV-DO compliant) • 4th Generation HELPTM technology • High Efficiency (R99 waveform): • 40 % @ POUT = +28.6 dBm • 34 % @ POUT = +17 dBm


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    UMTS1900 AWT6622 UMTS1900 PDF