SMD 392
Abstract: MLCC bias TCC K5-001
Text: Surface Mount Multilayer Ceramic Chip Capacitors SMD MLCCs KPS HV, Large Case, SM Series, C0G Dielectric, 500 – 10,000 VDC (Industrial Grade) Overview KPS HV (KEMET Power Solutions, High Voltage), Large Case (≥ 1515), SM Series capacitors in C0G dielectric are
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AUK 821
Abstract: No abstract text available
Text: Surface Mount Multilayer Ceramic Chip Capacitors SMD MLCCs KPS HV, Large Case, SM Series, C0G Dielectric, 500 – 10,000 VDC (Industrial Grade) Overview KPS HV (KEMET Power Solutions, High Voltage), Large Case (≥ 1515), SM Series capacitors in C0G dielectric are
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SM36B
Abstract: SMD resistor 474 JIS-C-6429 sm2510 k5001 pF8200 smd 472 resistor K5-001
Text: Surface Mount Multilayer Ceramic Chip Capacitors SMD MLCCs KPS HV, Large Case, SM Series, X7R Dielectric, 500 – 10,000 VDC (Industrial Grade) Overview KPS HV (KEMET Power Solutions, High Voltage), Large Case (≥ 1515), SM Series capacitors in X7R dielectric are designed to
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K5001
Abstract: K5-001 smd 122
Text: Surface Mount Multilayer Ceramic Chip Capacitors SMD MLCCs KPS HV, Large Case, SM Series, X7R Dielectric, 500 – 10,000 VDC (Industrial Grade) Overview KPS HV (KEMET Power Solutions, High Voltage), Large Case (≥ 1515), SM Series capacitors in X7R dielectric are designed to
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JIS-C-6429 Appendix 2
Abstract: JESD22 METHOD JA-104 aluminum electrolytic capacitor
Text: Multilayer Ceramic Capacitors High Voltage One world. One KEMET. Multilayer Ceramic Capacitors High Voltage Table of Contents Page Why Choose KEMET. 3
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15bis
JIS-C-6429 Appendix 2
JESD22 METHOD JA-104 aluminum electrolytic capacitor
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HER501
Abstract: HER507
Text: HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE CURRENT HER501 THRU HER507 50 to 800 Volts 5.0Ampere DO-27 .052 1.3 .048(1.2) FEATURES • • • • • Low coat construction Fast switching for high efficency. Low reverse leakage High forward surge current capability
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HER501
HER507
DO-27
UL94V-O
MIL-STD-202E
042ounce,
50mVp-p
/100NS
HER507
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C1995
Abstract: DS8187 DS8187N N48A
Text: DS8187 Vacuum Fluorescent Display Driver General Description Features The DS8187 is a vacuum fluorescent display tube driver This device is implemented in CMOS technology to provide high voltage output drivers and low power Dimming may be accomplished by either analog or digital input Autoload capability is accomplished by connecting the DATA OUT pin to
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DS8187
C1995
DS8187N
N48A
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dash 2b-5
Abstract: BJ70FL Trompeter 305 A71AB BJ73 Trompeter 14949 BJ77
Text: FID ND PL74 PL75 PL375 PL75FL CJ70TL CJ70 CJ370 CJ70FL BJ79TL BJ79 BJ379 BJ79FL PL71 BJ74TL BJ74 BJ374 BJ74FL 1A 1A IB 1A 2A 2A 2B 2A 3A 3A 3B 3A 4 5A 5A 5B 5A BJ77 1 BJ377 Al 1 A2 1 A3 1 A4 1 A5 1 AB 1 A7 1 AB 1 A9 1 Al 1 A2 1 A3 1 A4 1 A5 1 A5 -1 -25 -49
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PL375
PL75FL
CJ70TL
CJ370
CJ70FL
BJ79TL
BJ379
BJ79FL
BJ74TL
BJ374
dash 2b-5
BJ70FL
Trompeter 305
A71AB
BJ73
Trompeter 14949 BJ77
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2SC387
Abstract: No abstract text available
Text: Power Transistors 2SC3871 2SC3871 Silicon P N P Trip le-D iffu sed Planar Type Package Dim ensions High Breakdown Voltage, High Speed Switching U n it I : • Features 4 .4 m a x . • High speed switching • High collector-base voltage 2.9max, V cbo
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2SC3871
sc387
T32fiS2
2SC387
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MSD 7818
Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
Text: In n in ik ü r Q fâ lI Information Applikation RGW Typen übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1
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6250b
MSD 7818
MN9106
information applikation
7490 N
TDA 5700
information applikation mikroelektronik
udssr hefte
143KT1
Mikroelektronik Information Applikation
K 176 LE, K 561 LN
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Untitled
Abstract: No abstract text available
Text: 3Q E D • T 'iS 'ia a ? 0 0 2 ^ 0 1 S G S -T H O M S O N dDg[^ Q i[Li(gTOiö(gi S s * S- ° " * ? ! L S G S P 351 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP351 • • • • VDss 100 V ^DS(on) 0.6 ii 'd 6A HIGH SPEED SWITCHING APPLICATIONS
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SGSP351
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2N5432
Abstract: No abstract text available
Text: r ö^lTbOa üQQt.S4e} T 2ÖE D TELEDYNE COMPONENTS ULTRA LOW RON SWITCHING r - z 2N 5433 2N 5434 GEOMETRY 501 .230 M A X . .199 M A X . LOW R d s - 5 Ohms L O W C q d - 1 5 pfd JL a bso lu te m a x im u m PARAM ETER r a t in g s U N IT S SYM BO L D ra in to G ate V oltag e
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2N5432
2N5432
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brq ti
Abstract: BRQ TI 7C
Text: D National November 1995 Semiconductor </> co 00 •Nl cn DS3875 Futurebus+ Arbitration Controller General Description The DS3875 Futurebus+ Arbitration Controller is a member of National Semiconductor’s Futurebus+ chip set designed specifically for the IEEE 896.1 Futurebus+ standard. The
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DS3875
DS3885
DS3884A
bS0112t.
D074b53
brq ti
BRQ TI 7C
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ns802
Abstract: 601r3kn
Text: A dvanced P ow er Te c h n o l o g y O D APT601R3KN APT601R6KN O S 600V 6.5A 1.30Q 600V 5.8A 1.60 £2 POWER MOS IV‘ N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS «Ü ' dm PD V stg All Ratings: TQ = 25°C unless otherwise specified.
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APT601R3KN
APT601R6KN
120VH
O-220AB
ns802
601r3kn
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BUK442
Abstract: BUK442-60A BUK442-60B 1e47
Text: 7 ^ 3 9 - 0 ? Philips Components Data sheet status Preliminary specification d ate of issue March 1991 PHILIPS PowerMOS transistor SbE T> INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent m ode field-effect pow er transistor in a lastic full-pack envelope,
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BUK442-60A/B
711002b
-SOT186
BUK442
BUK442-60A
BUK442-60B
1e47
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Halbleiterbauelemente DDR
Abstract: diode BZW 70-20 VEB mikroelektronik Datenblattsammlung mikroelektronik DDR aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung mikroelektronik applikation information applikation mikroelektronik "halbleiterwerk frankfurt"
Text: 9 ¡M i n M W V S I I V I S N l l ¥ a Die vorliegenden Datenblätter dienen als Informationsmaterial für Geräteentwickler und Konstrukteure, Sie beinhalten Informationen über Halbleiterbauelemente des in "den Listen elektronischer Baulemente eingestuften Sortiments.
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V4019
DDR-1035
Halbleiterbauelemente DDR
diode BZW 70-20
VEB mikroelektronik
Datenblattsammlung
mikroelektronik DDR
aktive elektronische bauelemente ddr
mikroelektronik datenblattsammlung
mikroelektronik applikation
information applikation mikroelektronik
"halbleiterwerk frankfurt"
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RPG30G
Abstract: RPG-30G DF11S RPG30
Text: H RPG-30G 300W Sing Is Output with RFC Fu n ct series • F w h je s : ■ U iv a r a a i AC inpu1 : Frill ra ig e H H u i t i i a d i t * PPC tin c te n , rr> 0 .9 5 H H ^n eHiie-ney u p to S ’î l t . ¡typ i ■ W Iis ta id a C 'IY A C a jfg e r a u l tor ia ä e a id a
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RPG-30G
HRPG-300
RPG30G
RPG-30G
DF11S
RPG30
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information applikation mikroelektronik
Abstract: "Mikroelektronik" Heft information applikation mikroelektronik Heft Mikroelektronik Information Applikation VEB mikroelektronik C520D Radio Fernsehen Elektronik 1977 Heft 9 "information applikation" C504D
Text: im f ik F t s n ln l it r a Information Applikation A/D-Wandler Gesamtübersicht n i i QSQ ¥ *- h m ^ J é é é é é | M *•'¥ ¥ ¥ ■ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ' i ¥ ¥ ¥ ¥ m f lk r ^ B ^ ^ - c t a n o r iik Information Applikation H E F T 52 A/D-WANDLER
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GES5822
Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A G E Device bvceo Type @ 1 0 m A V Min. 00 00 60 00 «0 200 200 120 200 300 GES5827 GES5828 GES6000 GES6001 GES6002 40 40 25 25 25 50 00 00 OB WS 500 800 300 300 500 25 40 40 40 40 00 00
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GES5822
GES5823
GES5824
GES5825
GES5826
GES5827
GES5828
GES6000
GES6001
GES6002
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NEC 2501 LE 240
Abstract: NEC 2501 LE 737 nec 2501 pin details circuit diagram of mini ips system marking AA 6-pin NEC 2710 M3 6PIN
Text: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS ¿¿PC2757T, JuPC2758T 3V-BIAS L-BAND SILICON DOWNCONVERTER ICs FOR MOBILE COMMUNICATIONS DESCRIPTION The /xPC2757T and /¿PC2758T are silicon monolithic integrated circuits designed as 1st down converters for L
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uPC2757T
uPC2758T
/xPC2757T
PC2758T
PC2757T
NEC 2501 LE 240
NEC 2501 LE 737
nec 2501 pin details
circuit diagram of mini ips system
marking AA 6-pin
NEC 2710
M3 6PIN
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HGTG30N120E2
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR iti m a r r is SbE D • 43DE271 DD4224S ÖDS H H A S H G T G 3 0 N 12 0 E 2 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistor IGBT August 1991 Package Features ^ "3 9 ^ 3 / • 50 Amp 1200 Volt • Latch Free Operation
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43DE271
DD4224S
580ns
HGTG30N120E2
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as7c164-25pc
Abstract: 7C164-10
Text: AS7CNS4 AS7C164L Hitih-Perfornìanitì 8K xS CMOS SRAM & sV^'C KKx8 CMOS SRAM Common I/O IFEATURES Organization: 8,192 words x 8 bits Equal access and cycle times High speed - 10/12/15/20/25 ns address access time - 3/3/4/5/6 ns output enable access time
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AS7C164L
28-pin
32-pin
iD03L
as7c164-25pc
7C164-10
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information applikation
Abstract: A109D information applikation mikroelektronik B303D Mikroelektronik Information Applikation B222D B260D "halbleiterwerk frankfurt" "Mikroelektronik" Heft mikroelektronik heft
Text: InnJDlkîn 1C = I Information Applikation Monolitisch integrierte IS für die INDUSTRIE ELEKTRONIK KATALOG If SONDER-1 Teil 1 |1 HEFT 1 J • ft • • ■ ■ 4 ^ " ■ W ' r; '* r _ ’ rd m D ß = ^ s e l e l - c t 3 n o r i i k Information Applikation
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET D S07-12517-2E 8-bit Proprietary Microcontroller B lIlB F2MC-8L MB89628R/629R/P629
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S07-12517-2E
MB89628R/629R/P629
MB89628R/629R/P629
F9703
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