TL 424 TRANSISTOR
Abstract: A1049 C1996 LM60 LM60B LM60BIM3 LM60BIM3X LM60C LM60CIM3 LM60CIM3X
Text: LM60B LM60C 2 7V SOT-23 Temperature Sensor Y General Description Y The LM60 is a precision integrated-circuit temperature sensor that can sense a b40 C to a 125 C temperature range while operating from a single a 2 7V supply The LM60’s output voltage is linearly proportional to Celsius Centigrade temperature ( a 6 25 mV C) and has a DC offset of
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LM60B
LM60C
OT-23
TL 424 TRANSISTOR
A1049
C1996
LM60
LM60BIM3
LM60BIM3X
LM60C
LM60CIM3
LM60CIM3X
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H11AV2
Abstract: H11AV1A H11AV1M
Text: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum
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H11AV1
H11AV2
P01101866
CR/0117
E90700,
H11AV1A
H11AV1M
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H11AV1
Abstract: H11AV2 H11AV1A H11AV2A H11AV1M
Text: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum
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H11AV1
H11AV2
H11AV2SR2V-M
H11AV2SV-M
P01101866
CR/0117
E90700,
H11AV1A
H11AV2A
H11AV1M
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arco mica trimmer
Abstract: ARF464A ARF464B VK200-4B
Text: ARF464A ARF464B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 65V 100W 100MHz The ARF464A and ARF464B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
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ARF464A
ARF464B
O-247
100MHz
ARF464A
ARF464B
arco mica trimmer
VK200-4B
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with
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SZP-3026Z
EDS-104666
SZP-3026Zâ
SZP-3026Z*
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BUZ72A
Abstract: TA17401 TB334
Text: BUZ72A Data Sheet June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching
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BUZ72A
TA17401.
BUZ72A
TA17401
TB334
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TL 417
Abstract: TlP30C P30C
Text: 3 8 7 5 0 8 1 _ G ~ ’E S O L ID S TA TE 3 3 7 5 0 6 1 D O 3 l ^ a 3? ^ f f > TIP 30 Series PNP POWER TRANSISTORS -40 — 100 VOLTS -1 AMP, 30 WATTS COMPLEMENTARY TO THE TIP29 SERIES t h e TIP 30 Series power transistors are designed for use in general purpose amplifier and switching applications.
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TIP29
TL 417
TlP30C
P30C
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transistor c 6073
Abstract: TRANSISTOR 431p transistor c 6073 circuit diagram ptc 820 TF PTC PTC886 6063 T0 ptc 205 ptc 500 ptc b
Text: MICROSEMI CORP/POWER ÖSD D • bllSTSG 00003b2 2 NPN Darlington Transistors TO-2Q4MA TO ' 3 Part Number Ic Amps PTC 10002 PTC 10003 PTC 10006 PTC 10007 PTC 6251 PTC 6252 PTC 6253 PTC 6000 PTC 6001 PTC 6002 PTC 6003 PTC 10000 PTC 10001 PTC 10004 PTC 10005
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00003b2
TQ-204MA
PTC102
transistor c 6073
TRANSISTOR 431p
transistor c 6073 circuit diagram
ptc 820
TF PTC
PTC886
6063 T0
ptc 205
ptc 500
ptc b
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lm7211
Abstract: TL 424 TRANSISTOR 100-C LM60 LM60BIM3 LM60BIM3X LM60CIM3 LM60CIM3X MA03B t6c marking sot23
Text: b 5011B 4 0 1 0 1 5 0 0 7 T & " _ Semiconductor LM60B/LM60C 2.7V, SOT-23 Temperature Sensor General Description The LM60 is a precision integrated-circuit temperature sen sor that can sense a -4 0 ° C to + 125“C temperature range while operating from a single + 2.7V supply. The LM60's
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bS011E4
LM60B/LM60C
OT-23
lm7211
TL 424 TRANSISTOR
100-C
LM60
LM60BIM3
LM60BIM3X
LM60CIM3
LM60CIM3X
MA03B
t6c marking sot23
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CD860
Abstract: No abstract text available
Text: TELEDYNE SûE COMPONENTS H D • êW bÜ S GOQbSSB Q ■ T -¿ 7 fiesSOi ULTRA LOW NOISE CD860 DUAL MATCHED N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 424 IU > M HIGH PERFORMANCE DIFFERENTIAL AMPLIFIERS T -JtOMAX. • 1.4 nv /Hz1/2 en @ 1 kHz • Min. Operating Gm 25,000 /imho
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CD860
CD860
140kHz
20kHz
100KQ
E--06
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D44E1
Abstract: D44E3 D44E2 d44e3 to-220 TL 272 D44E D45E 130133
Text: VERY HIGH GAIN D44E Series NPN POWER DARLINGTON TRANSISTORS 40-80 VOLTS 10 AMP, 50 WATTS COMPLEMENTARY TO THE D45E SERIES Applications: NPN COLLECTOR • Solenoid Driver • Lamp Driver • Relay Substitute • Switching Regulator CASE STYLE TO -220A B DIMENSIONS ARE IN INCHES AND M ILLIM ETERS
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04Sai4|
D44E1
D44E3
D44E2
d44e3 to-220
TL 272
D44E
D45E
130133
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2N6550
Abstract: CD860 teledyne transistor teledyne crystalonics
Text: TELEDY NE COMPONENTS SÔE D • ôTlTbûa GQQbSS4 2 ■ 7 < Il - * 5 ULTRA LOW NOISE 2N6550 CM860 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR G E O M E T R Y 424 .230 MAX. 195t.005- Lo The 2 N 6 5 5 0 / C M 8 6 0 is a high, gm />D low noise Junction F.E.T. for low level
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2N6550
CM860
E--07
2N6550/CM860/CD860
2N6550/CM860/CD860
CD860
teledyne transistor
teledyne crystalonics
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2N6550
Abstract: ultra low igss pA AAHB low igss 2N6550/CM860
Text: ULTRA LOW NOISE h â 2N6550 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR r • GEOMETRY 424, PG. 58 ¿ 3 0 MAX The 2N 6550 is a high, Jn/lD lo w noise ju n c tio n F.E.T. fo r lo w level a m p lifie r use. The min. gm o f 25,000 ^imho assures a voltage gain o f 25 m in. w ith a 1K
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2N6550
2N6550
000/j/
ultra low igss pA
AAHB
low igss
2N6550/CM860
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buz31
Abstract: 06G3 BUZ31 H
Text: S XLXCONIX INC lflE D • 62547 35 0 0 14b 01 3 ■' BUZ31 N-Channel Enhancement Mode Transistor T - 3 TO-22QAB ct - U TOP VIEW PRODUCT SUMMARY V BR|DSS ,D§ r 200 0.20 ■d (A 12.5 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
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BUZ31
O-22QAB
QQ14b
buz31
06G3
BUZ31 H
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2SD1952
Abstract: No abstract text available
Text: SILICON TRANSISTOR 2SD1952 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLO DESCRIPTION The 2SD1952 is designed fo r audio frequency power amplifier and switching application, especially in Hybrid integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard Miniature Package
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2SD1952
2SD1952
2SB1301
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424 motorola
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G I N E R E E MGSF1N02LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N -C H AN N EL EN H AN CEM EN T-M O D E TM OS M O SFET Part of the GreenLine Portfolio of devices with energyconserving traits.
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MGSF1N02LT1
424 motorola
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P4N60
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M G P4N60ED Insulated Gate Bipolar Transistor w ith Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T0-220 4.0 A @ 90“C 6.0 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE
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MGP4N60ED
P4N60
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Untitled
Abstract: No abstract text available
Text: EXAR 3422618 CORP EXAR CORP D e | 342Eblfi " 91D XR-H100 Master-Chip Chip Size: 95 x 80 mils NPN Transistors Total Components: 424 Small Signal: 73 Bonding Pads: 18 Medium: 2 Max. Operating Voltage: 20V PNP Transistors Lateral: 22 Pinch Resistors 60kfi: 8
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342Eblfi
XR-H100
60kfi:
356kil
XR-H100
XR-1488/1489A
XR-1488
XR-1568/XR-1468C
XR-1468/1568
XR-1468/1568
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XR-H100
Abstract: XR-1488 XR-1488N XR-1488P XR-1489A XR-1489AN XR-1489AP EXAR XR
Text: EXAR & CORP D e | 342Eblfi □004?b3 i I 3 4 2 2 6 18 EXAR 91D CORP XR-H100 Master-Chip Chip Size: 95 x 80 mils Total Components: 424 Bonding Pads: 18 Max. Operating Voltage: 20V NPN Transistors Small Signal: 73 Medium: 2 PNP Transistors Lateral: 22 T Pinch Resistors
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342EblÃ
XR-H100
60kfi:
450ft:
356kii
XR-H100
XR-1488/1489A
XR-1488
with568M
XR-1568/XR-1468C
XR-1488N
XR-1488P
XR-1489A
XR-1489AN
XR-1489AP
EXAR XR
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TL 424 TRANSISTOR
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO c a VOE UL CSA SETI BS ® SEMKO OEMKO BAST NEMKO 6-Pin DIP Optoisolators Transistor Output H11A1 thru H11A5 STYLE 1 PLASTIC The H11A1 thru H11A5 devices consist of a gallium arsenide infrared em itting diode optically coupled to a m onolithic silicon phototransistor detector.
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H11A1
H11A5
H11A5
TL 424 TRANSISTOR
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0903010
Abstract: 2SC3816 E090101 NE0900-07
Text: CLASS C, 940 MHz, 7 VOLT POWER TRANSISTOR *£*¡2 , NEM090701-07 FEATURES DESCRIPTION • HIGH PO W ER AN D GAIN The NE0900-07 and N E M 0900-07 series of NPN silicon epitaxial UH F power transistors are designed specifically for hand-held radio applications with a supply voltage of 7.2 V.
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NEM090701-07
NE0900-07
NEM0900-07
0903010
2SC3816
E090101
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14n50
Abstract: TL 424 TRANSISTOR sth14n50
Text: SGS-THOMSON «^ miOTrifMOOi STH14N50 STH14N50FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH14N50 STH14N50FI . . . . . V dss RDS(on Id 500 V 500 V 0.45 Q 0.45 £2 14.1 A 8 .8 A AVALAN C H E RUG G EDN ESS TECHNO LO G Y 100% AVALANC HE TESTED
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STH14N50
STH14N50FI
14N50
STH14N50FI
STH14N50/FI
TL 424 TRANSISTOR
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2N73A
Abstract: 2N696 2n697 2N718 ml907 TW58 2W17
Text: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 7MI31. ?tW58. 2N1420. 2N1507, 2W1613, 2NI71I N-P-N SILICON TRANSISTORS B U L L E T I N N O. D L - S 6 9 3 4 7 1 , M A Y 1 9 6 3 - B E V I S 6 D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for
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2N696,
2N697.
2N717.
2N718.
2N718A,
2N730,
2N1420.
2N1507,
2W1613,
2NI71I
2N73A
2N696
2n697
2N718
ml907
TW58
2W17
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transistor k 4110
Abstract: K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13
Text: MOTOROLA SC D IO D ES/O PTO IM E 0 I MOTOROLA b3b?2SS 0000404 - R 4 \ - ~ 5 | 7 3 > SEMICONDUCTOR TECHNICAL DATA MOC70 Series Slotted Optical Sw itch es Transistor Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili
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i-noa36Â
osit34Â
354G-01
transistor k 4110
K 4014 transistor
vqe 14e
TLO51
wf vqe 24 d
DIODE 4014
IC 4022
MOC70
S 417T
WF VQE 13
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