Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TL 27A Search Results

    TL 27A Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    RJK4515DPK-00#T0 Renesas Electronics Corporation Nch Single Power Mosfet 450V 27A 200Mohm To-3P Visit Renesas Electronics Corporation
    UPA2813T1L-E2-AT Renesas Electronics Corporation Pch Single Power Mosfet -30V -27A 6.2Mohm 8Pin HVSON (3333) Visit Renesas Electronics Corporation
    UPA2826T1S-E2-AT Renesas Electronics Corporation Nch Single Power Mosfet 20V 27A 4.3Mohm HWSON-8 Visit Renesas Electronics Corporation
    RJL6018DPK-00#T0 Renesas Electronics Corporation Nch Single Power Mosfet 600V 27A 265Mohm To-3P Visit Renesas Electronics Corporation
    SF Impression Pixel

    TL 27A Price and Stock

    Vishay Intertechnologies TLZ27A-GS08

    Zener Diodes 27 Volt 0.5 Watt IR = 0.04uA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TLZ27A-GS08 2,500
    • 1 $0.14
    • 10 $0.099
    • 100 $0.049
    • 1000 $0.046
    • 10000 $0.032
    		Buy Now

    Texas Instruments TLE2027AMD

    Precision Amplifiers Lo Noise Hi Gain
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TLE2027AMD
    • 1 $4.37
    • 10 $3.32
    • 100 $2.69
    • 1000 $2.63
    • 10000 $2.21
    		Get Quote

    Vishay Intertechnologies TLZ27A-GS18

    Zener Diodes 27 Volt 0.5 Watt IR = 0.04uA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TLZ27A-GS18
    • 1 $0.25
    • 10 $0.17
    • 100 $0.083
    • 1000 $0.048
    • 10000 $0.031
    		Get Quote

    Central Semiconductor Corp 2N6027 APP TIN/LEAD

    Bipolar Transistors - BJT Uni 40Vgkf 5.0Vgkr 40Vgar 40Vak 300mW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2N6027 APP TIN/LEAD
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.17
    		Get Quote

    Central Semiconductor Corp 1.5CE27A BK TIN/LEAD

    ESD Protection Diodes / TVS Diodes 1.5kW 27V 200A 23.1V 5.0uA 37.5V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1.5CE27A BK TIN/LEAD
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.274
    		Get Quote
    Find more TL 27A price and stock on Findchips.com

    TL 27A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M39029/1-101

    Abstract: M22885 ms27722-22 MS24523-23 MS27785-30 ms24515 MS27719-23-1 MIL-S-83781 MS24524-23 MS27723-23
    Text: TL Series FEATURES ɀ Qualified to MIL-S-3950 ɀ Environment-proof sealing ɀ 1, 2, and 4 pole circuitry ɀ Standard and pull to unlock levers ɀ 2 and 3 position, maintained, and momentary toggle action ɀ Temperature range: – 85°F to +160°F – 65°C to +71°C


    Original     		PDF MIL-S-3950 32EN1-6 MS21320-4) 41EN1-6 MS24420-1) 42EN1-6 MS24420-2) M39029/1-101 M22885 ms27722-22 MS24523-23 MS27785-30 ms24515 MS27719-23-1 MIL-S-83781 MS24524-23 MS27723-23

    76419S

    Abstract: AN7254 AN9321 AN9322 HUF76419P3 HUF76419S3S HUF76419S3ST TB334
    Text: HUF76419P3, HUF76419S3S Data Sheet August 1999 File Number 4669.1 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76419P3 HUF76419S3S


    Original     		PDF HUF76419P3, HUF76419S3S O-220AB O-263AB HUF76419P3 76419S AN7254 AN9321 AN9322 HUF76419P3 HUF76419S3S HUF76419S3ST TB334

    76419s

    Abstract: No abstract text available
    Text: HUFA76419P3, HUFA76419S3S TM Data Sheet November 2000 File Number 4978 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76419P3 HUFA76419S3S


    Original     		PDF HUFA76419P3, HUFA76419S3S O-220AB O-263AB HUFA76419P3 O-220AB O-263AB 76419P 76419S

    76419S

    Abstract: HUFA76419P3 HUFA76419S3S HUFA76419S3ST TB334 76419P
    Text: HUFA76419P3, HUFA76419S3S Data Sheet December 2001 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76419S3S HUFA76419P3 Features • Ultra Low On-Resistance


    Original     		PDF HUFA76419P3, HUFA76419S3S O-220AB O-263AB HUFA76419P3 76419P 76419S HUFA76419P3 HUFA76419S3S HUFA76419S3ST TB334 76419P

    76419s

    Abstract: 7641 HUF76419P3 HUF76419S3S HUF76419S3ST TB334 HUF76419
    Text: HUF76419P3, HUF76419S3S Data Sheet August 1999 File Number 4669.1 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 19P Packaging JEDEC TO-220AB JEDEC TO-263AB UF76 9S3 bjec utho eyw s tersi DRAIN FLANGE SOURCE DRAIN GATE GATE


    Original     		PDF HUF76419P3, HUF76419S3S O-220AB O-263AB HUF76419P3 76419s 7641 HUF76419P3 HUF76419S3S HUF76419S3ST TB334 HUF76419

    76419S

    Abstract: HUFA76419P3 HUFA76419S3S HUFA76419S3ST TB334 76419P 76419
    Text: HUFA76419P3, HUFA76419S3S Data Sheet November 2000 File Number 4978 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76419P3 HUFA76419S3S


    Original     		PDF HUFA76419P3, HUFA76419S3S O-220AB O-263AB HUFA76419P3 76419S HUFA76419P3 HUFA76419S3S HUFA76419S3ST TB334 76419P 76419

    76419S

    Abstract: 76419P AN9321 HUF76419P3 HUF76419S3S HUF76419S3ST TB334 49e8
    Text: HUF76419P3, HUF76419S3S Data Sheet December 2001 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF76419P3 HUF76419S3S Features • Ultra Low On-Resistance


    Original     		PDF HUF76419P3, HUF76419S3S O-220AB O-263AB HUF76419P3 76419P 76419S 76419P AN9321 HUF76419P3 HUF76419S3S HUF76419S3ST TB334 49e8

    IGBT 1500v 50A

    Abstract: IC tl 072 ixgf IXGF25N300 IGBT 1500V .50A pf98 338B2
    Text: High Voltage IGBT IXGF25N300 VCES = 3000V = 27A IC25 VCE sat ≤ 3.0V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES


    Original     		PDF IXGF25N300 338B2 IGBT 1500v 50A IC tl 072 ixgf IXGF25N300 IGBT 1500V .50A pf98 338B2

    IGBT 1500v 50A

    Abstract: IC tl 072 igbt 1500V
    Text: High Voltage IGBT IXGF25N300 VCES = 3000V = 27A IC25 VCE sat ≤ 3.0V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES


    Original     		PDF IXGF25N300 338B2 IGBT 1500v 50A IC tl 072 igbt 1500V

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT VCES = 3000V IC25 = 27A VCE sat ≤ 3.0V IXGF25N300 For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V VGES


    Original     		PDF IXGF25N300 338B2

    IGBT 1500v 50A

    Abstract: IGBT 1500v 25A
    Text: Advance Technical Information IXGF25N300 High Voltage IGBT VCES = 3000V = 27A IC25 VCE sat ≤ 3.0V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V


    Original     		PDF IXGF25N300 338B2 IGBT 1500v 50A IGBT 1500v 25A

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type 60V P-Channel MOSFET KQB27P06 TO-263 -27A, -60V, RDS on = 0.07 1 .2 7 -0+ 0.1.1 Features Unit: mm @VGS = -10 V +0.1 1.27-0.1 +0.2 4.57-0.2 Fast switching 0.1max +0.1 1.27-0.1 Improved dv/dt capability 175 +0.1 0.81-0.1 2.54 maximum junction temperature rating


    Original     		PDF KQB27P06 O-263 120pF)

    APT5018BLL

    Abstract: APT5018SLL
    Text: APT5018BLL APT5018SLL 500V 27A 0.180W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT5018BLL APT5018SLL O-247 O-247 APT5018BLL APT5018SLL

    Untitled

    Abstract: No abstract text available
    Text: APT5018BLL APT5018SLL 500V 27A 0.180W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT5018BLL APT5018SLL O-247 O-247

    Saba tv Circuit Diagram schematics

    Abstract: 13003 TO 92 PACKAGE 13005 2 ANI 1015 JE 13003 oasis si 13003 J310 54S85 SRIFM
    Text: MIL-M-38510/82B 30 OCTOBER 1987 SUPERSEDING MIL-M-38510/82A 30 November 1 9 8 3 M I LI TA R Y SPECI FI CATI ON MI CROCI RCUI TS, DIGITAL, BI POLAR, SCHOTTKY T TL , MAGNITUDE COMPARATORS, MONOLI THI C SI LI CON This s p e c ific a tio n is me n t s and Agencies


    OCR Scan     		PDF MIL-M-38510/82B MIL-M-38510/82A MIL-M-38510, Saba tv Circuit Diagram schematics 13003 TO 92 PACKAGE 13005 2 ANI 1015 JE 13003 oasis si 13003 J310 54S85 SRIFM

    Untitled

    Abstract: No abstract text available
    Text: IN T E R F A C E SP E C IF IC A T IO N A D PC M L IN E FO R M A T T E R B t8 2 0 0 .c .1 .0 INTRODUCTION This specification describes an ADPCM Line Formatter circuit that implements signaling and line formatting for 32 kbit/s ADPCM voiceband signals according to ANSI standard Tl.302-1989, "Digital Processing of


    OCR Scan     		PDF TR-TSY-000210, 00331flb

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST AF 50 ALL RIGHTS RESERVED. REVISIONS LTR D DESCRIPTION REV PER 0G 3A— 0 3 0 8 — 0 4 DATE DWN APVD 27APR04 JR KR D D SLOT ACCEPTS 0 . 5 1 - 0 . 6 4 m m


    OCR Scan     		PDF 27APR04 31MAR2000

    BFC11

    Abstract: No abstract text available
    Text: lili i t t i lili SEME BFC11 LAB 4TH GENERATION MOSFET SOT-227 Package Outline. Dimensions in mm inches 11 8 (0 4 6 3 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS } I D(cont) 800V 27A ^DS(on) 0.30Q 'DSS Terminal 1 Terminal 3 Source 2* Gate


    OCR Scan     		PDF BFC11 OT-227 380nS MIL-STD-750 Prelim-1/94 0001SE4 BFC11

    APT8030LVFR

    Abstract: No abstract text available
    Text: A d v a n ced APT8030LVFR po w er Te c h n o l o g y ' 800V POWER MOS V 27A 0.30011 FREDFET Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT8030LVFR O-264 APT8030LVFR MIL-STD-750 O-264AA

    Untitled

    Abstract: No abstract text available
    Text: 7 T H IS DRAW ING IS U N P U B L IS H E D . RE LEA S E D ALL COPYRIGHT - FOR 5 6 4 3 2 PU B LIC ATIO N RIG HTS R E S ER V ED . BY TYCO ELECTRONICS CORPORATION. REVISIONS LOC D IS T AD 00 LTR D E S C R IP T IO N J1 DATE DWN KK AEG 27AUG09 REVISED PER ECQ-09-020774


    OCR Scan     		PDF ECO-09-020774 27AUG09 31MAR2000

    MOS 4016

    Abstract: T4016B T40-16B
    Text: A dvanced P ow er Te c h n o l o g y A P 400 ' 4016 T B V R 27A 0 160 2 V . Í POWER MOS V Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF O-247 APT4016BVR MIL-STD-75Q O-247AD MOS 4016 T4016B T40-16B

    diode c248

    Abstract: sef542 C246 SGSP381 SEF541 C-247 SEF543 C247 sgs*P381 C245
    Text: S G S-THOMSON 0 7 E 1 | 7 ^ 3 1 2 3 ? 0 0 1 6 0 2 5 3 ' 73C 17522 D /T SEF541 SEFS42 SEFS43 N-CHANNEL POWER MÛS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS V D SS R D S ON) 60V 0.085 Q 27A 100 V/60V 0.11 24A SEF541 SEF542 These products are diffused multi-cell silicon gate


    OCR Scan     		PDF SEF541 SEFS42 SEFS43 SEF542 SEF543 SEF542/SEF543 300/us, SEF541, SGSP381 SEF542/SEF543, diode c248 C246 C-247 C247 sgs*P381 C245

    Untitled

    Abstract: No abstract text available
    Text: A d v a n ced P o w er Te c h n o l o g y APT8030JNFR ISOTOP* 800V 27A 0.30Q S U "UL Recognized" File No. E145592 S POWER MOS IVe N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: T c = 25°C unless otherwise specified.


    OCR Scan     		PDF APT8030JNFR E145592 APT8030JNFR OT-227

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o lo g y • APT5020BNFR APT5022BNFR POWER MOS IV< 500V 500V 28A 0.20Q 27A 0.220 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT5020BNFR APT5022BNFR APT502Q/5022BNFR 0Q01473