Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TL 188 TRANSISTOR PNP Search Results

    TL 188 TRANSISTOR PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096EHVX Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    TL 188 TRANSISTOR PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE127

    Abstract: TL 187 TL 188 TRANSISTOR PNP
    Text: NTE127 Germanium PNP Transistor Horizontal Output Amplifier Absolute Maximum Ratings: Collector–Base Voltage, VCBO Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320V


    Original
    PDF NTE127 400mA NTE127 TL 187 TL 188 TRANSISTOR PNP

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original
    PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    TIP42C as regulator

    Abstract: BU108 2SC103 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 NSP2100 2SD68 BDX54 2SC1943 MJE2482 2SD675
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE1123 Bipolar Power PNP Low Dropout Regulator Transistor PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS The MJE1123 is an applications specific device designed to provide low–dropout linear regulation for switching–regulator post regulators, battery powered systems


    Original
    PDF MJE1123 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C TIP42C as regulator BU108 2SC103 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 NSP2100 2SD68 BDX54 2SC1943 MJE2482 2SD675

    BU108

    Abstract: BD139 silicon transistors BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD44H11* PNP MJD45H11* Complementary Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device . . . for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.


    Original
    PDF MJD44H11* MJD45H11* D44H/D45H TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 BD139 silicon transistors BU326 BU100

    mj11015 equivalent

    Abstract: MJ11016 equivalent 2SC1096 equivalent nsd15 MJ3237 BU108 BD875 equivalent MJ4502 EQUIVALENT 2SD718 2sb688 amplifier schematic SDN6000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor


    Original
    PDF TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N6490 mj11015 equivalent MJ11016 equivalent 2SC1096 equivalent nsd15 MJ3237 BU108 BD875 equivalent MJ4502 EQUIVALENT 2SD718 2sb688 amplifier schematic SDN6000

    2SA835

    Abstract: transistor D 1557 bu806 equivalent 2SD436 2SD669 equivalent BU108 TL 188 TRANSISTOR PNP 2Sd525 equivalent 2sa1046 2N6021
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE9780* Advance Information PNP Silicon Power Transistor *Motorola Preferred Device The MJE9780 is designed for vertical output of 14–inch to 17–inch televisions and CRT monitors, as well as other applications requiring a 150 volt PNP transistor.


    Original
    PDF MJE9780* MJE9780 220AB mAdc/10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SA835 transistor D 1557 bu806 equivalent 2SD436 2SD669 equivalent BU108 TL 188 TRANSISTOR PNP 2Sd525 equivalent 2sa1046 2N6021

    mj15003 equivalent

    Abstract: 2n3055 MJ15003 2N3055 BU108 motorola MJ15003 BDX54 MJ15004 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power Transistors MJ15003* PNP MJ15004* The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —


    Original
    PDF MJ15003 MJ15004 MJ15003* MJ15004* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A mj15003 equivalent 2n3055 MJ15003 2N3055 BU108 motorola MJ15003 BDX54 BU326 BU100

    IR3001

    Abstract: pin configuration NPN transistor BD679 724 motorola NPN Transistor with heat pad similar ic BA 3812 PMD16K40 TRANSISTOR BC 545 2Sd331 npn transistor BU108 BD130 TO126 pin configuration NPN transistor tip41c
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJF15030 PNP MJF15031 Complementary Power Transistors For Isolated Package Applications Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original
    PDF MJF15030 MJF15031 MJE15030 MJE15031 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 IR3001 pin configuration NPN transistor BD679 724 motorola NPN Transistor with heat pad similar ic BA 3812 PMD16K40 TRANSISTOR BC 545 2Sd331 npn transistor BU108 BD130 TO126 pin configuration NPN transistor tip41c

    BC 458

    Abstract: 2SD128 BU108 ST T4 3580 2N55 TIP31 FOOTPRINT TIP32 FOOTPRINT BUX48 2SC111 2SC161
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD31,C* PNP MJD32,C* Complementary Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • • SILICON


    Original
    PDF MJD31 MJD32 TIP31 TIP32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BC 458 2SD128 BU108 ST T4 3580 2N55 TIP31 FOOTPRINT TIP32 FOOTPRINT BUX48 2SC111 2SC161

    BU108

    Abstract: 0621 TL MJE2955T 2SC1943 2SC1419 MJE2801 BU326 BU100 BUS50
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJF3055 PNP MJF2955 Complementary Silicon Power Transistors . . . specifically designed for general purpose amplifier and switching applications. • • • • • • • Isolated Overmold Package 1500 Volts RMS Min


    Original
    PDF MJE3055T MJE2955T E69369, MJF3055 MJF2955 TIP73B TIP74 TIP74A TIP74B TIP75 BU108 0621 TL MJE2955T 2SC1943 2SC1419 MJE2801 BU326 BU100 BUS50

    motorola MJ15001

    Abstract: BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —


    Original
    PDF MJ15001 MJ15002 MJ15002 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A motorola MJ15001 BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139

    RCA423

    Abstract: BD413 BD139.16 2SA698 2sc1943 BD139.10 2SC1224 BD419 2SA939 BD4112
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP D45C Complementary Silicon Power Transistor 4.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS . . . for general purpose driver or medium power output stages in CW or switching applications. • Low Collector–Emitter Saturation Voltage — 0.5 V Max


    Original
    PDF TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N6490 RCA423 BD413 BD139.16 2SA698 2sc1943 BD139.10 2SC1224 BD419 2SA939 BD4112

    MJ15003 300 watts amplifier

    Abstract: ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High Voltage Power Transistors MJD340* PNP MJD350* Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. *Motorola Preferred Device DPAK For Surface Mount Applications


    Original
    PDF MJE340 MJE350 MJD340* MJD350* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJ15003 300 watts amplifier ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419

    Motorola transistors MJE3055 TO 127

    Abstract: MJE1092 transistors 2sd673 2SC1419 transistor MJE6043 BU124 MJW16010 BD590 2SB654 bdw93c pin configuration
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN D44VH PNP D45VH Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high–speed switching applications, such as switching regulators and high frequency inverters.


    Original
    PDF D44VH D45VH TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C Motorola transistors MJE3055 TO 127 MJE1092 transistors 2sd673 2SC1419 transistor MJE6043 BU124 MJW16010 BD590 2SB654 bdw93c pin configuration

    tip122 tip127 audio amp schematic

    Abstract: BU108 2Sd331 npn transistor pin configuration PNP transistor tip42c 2sa940 2sc2073 724 motorola NPN Transistor with heat pad MJE711 tip122 tip127 audio amp D45H11 equivalent replacement BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJF122 PNP MJF127 Complementary Power Darlingtons For Isolated Package Applications Designed for general–purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original
    PDF MJF122 MJF127 TIP122 TIP127 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 tip122 tip127 audio amp schematic BU108 2Sd331 npn transistor pin configuration PNP transistor tip42c 2sa940 2sc2073 724 motorola NPN Transistor with heat pad MJE711 tip122 tip127 audio amp D45H11 equivalent replacement BU326

    2sd880 equivalent

    Abstract: tip3055 equivalent BU108 mje2055 2n3055 motor control circuits 2N6576 equivalent equivalent of 2sc2071 2N6107 equivalent BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5850 MJE5851* MJE5852*  Data Sheet Designer's SWITCHMODE Series PNP Silicon Power Transistors *Motorola Preferred Device 8 AMPERE PNP SILICON POWER TRANSISTORS 300, 350, 400 VOLTS 80 WATTS The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They


    Original
    PDF MJE5850, MJE5851 MJE5852 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2sd880 equivalent tip3055 equivalent BU108 mje2055 2n3055 motor control circuits 2N6576 equivalent equivalent of 2sc2071 2N6107 equivalent BU326 BU100

    TRANSISTOR C 3807

    Abstract: BU108 2SA1046 2N5034 package motorola 2n5303 2Sd331 npn transistor 724 motorola NPN Transistor with heat pad transistor TIP107 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJF6388* PNP MJF6668* Complementary Power Darlingtons For Isolated Package Applications *Motorola Preferred Devices Designed for general–purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original
    PDF MJF6388* MJF6668* 2N6388, 2N6668, TIP102 TIP107 E69369 TIP73B TIP74 TIP74A TRANSISTOR C 3807 BU108 2SA1046 2N5034 package motorola 2n5303 2Sd331 npn transistor 724 motorola NPN Transistor with heat pad transistor TIP107 BU326 BU100

    transistor marking code 12W SOT-23

    Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original
    PDF SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp

    TL 188 TRANSISTOR PNP

    Abstract: No abstract text available
    Text: h -7 > y 7s $ / J ransistors 2SB1535F5 ^ E p ita x ia l Planar PNP Silicon Transistor fé ü îM :J jlS lli/ L o w Freq. Power Amp. y fjiH /D im e n s io n s Unit : mm 1 ) V q e (sat) V c e (sat) ¿ — 0.6 V (lc /lB = -0 .5 5 A /-0 .0 3 A ) 2) * x t o w r * hFEo n -m m ifm


    OCR Scan
    PDF 2SB1535F5 TL 188 TRANSISTOR PNP

    Untitled

    Abstract: No abstract text available
    Text: NEC I SILICON TRANSISTOR 2SA1385-Z V M M PNP SILICO N EPITAXIAL TR A N SISTO R MP-3 D ESC RIP T IO N 2 S A 1 3 8 5 -Z is d e sign ed for A u d io Frequency A m plifier and PA CKA G E D IM E N S IO N S in millimeters Sw itching, especially in Hybrid Integrated Circuits.


    OCR Scan
    PDF 2SA1385-Z 3518-Z IEI-1209)

    TL 187 TRANSISTOR PNP

    Abstract: BA672 TL 188 TRANSISTOR PNP TL 188 TRANSISTOR PIN DIAGRAM aafe
    Text: BA6722 BA6722 h 7 > v * £ * < y K -7 < / \ V Transistor Switch Driver / Series Regulator BA6722 l i , v 'J - X U i 1CT ' t <, 2 0 0 5V U + ' z l U - S • W ^ T ^ S / D im e n s io n s (Unit : mm PNP I ! ï § T '8 t / 3 c è f t T t 'Î l'o Vcc ü(7) PNP h 7 > v X * £ f f l l ' T * ] « l ê Î l Î t o


    OCR Scan
    PDF BA6722 BA6722 TL 187 TRANSISTOR PNP BA672 TL 188 TRANSISTOR PNP TL 188 TRANSISTOR PIN DIAGRAM aafe

    2SC3733

    Abstract: 2SC3733-T La HL33 2SA1460 IMWS1
    Text: SEC j m = f T iY C * S ilicon T ran sis to r i 2 '> 7 iV V & is •; n > P N P :e S A 1 4 6 ^ PNP Silicon Epitaxial Transistor High Speed Switching, High Frequency Amplifier


    OCR Scan
    PDF 2SA1460 2SC3733 12/PACKAGE PWS10 CycleS50 2SC3733-T La HL33 2SA1460 IMWS1

    transistor 21Y

    Abstract: 2N1556 2N1556A TRANSISTOR 3052 2N1553A 2N1554A 2N1555A 2N1555 J717 2N1553
    Text: MIfc-a-Î9500/3 31ACEL 8 February 1971 SUp ERSE d M ; MIL-S-19500/331 EL) 5 May 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP. GERMANIUM, POWER TYPES 2N1553A THROUGH 2N1556A I. SCOPE 1.1 Scope.- This specification covers the detail requirements


    OCR Scan
    PDF /331A MIL-S-19500/ 2N1553A 2N1556A 2N1554A 2N1555A 2N1556A transistor 21Y 2N1556 TRANSISTOR 3052 2N1555 J717 2N1553

    L4949E

    Abstract: No abstract text available
    Text: /TT SGS-IHOMSON * 7 / . RflD g[si llLi(g ®li!!lD(gi L4949E MULTIFUNCTION VERY LOW DROP VOLTAGE REGULATOR • OPERATING DC SUPPLY VOLTAGE RANGE 5V - 28V ■ TRANSIENT SUPPLY VOLTAGE UP TO 40V ■ EXTREMELY LOW QUIESCENT CURRENT IN STANDBY MODE ■ HIGH PRECISION STANDBY OUTPUT VOLT­


    OCR Scan
    PDF L4949E 100mA L4949ED L4949EP L4949E