P8800I
Abstract: molex 5558 5559 MOLEX p125l MOLEX 4 pin H6657P H9848P-09-V0 5271 Molex H8508 P825422I-03
Text: TKP Taiwan Pin terminal Taiwan King Pin Terminal Co. Ltd. Cross Reference 350851-1 350561-1 350866-1 350778-1 350767-1 350780-1 350810-1 350781-1 926308-3 350782-1 926309-3 350783-1 350784-1 350865-1 350777-1 350766-1 350779-1 350809-1 350715-1 640582-1 350720-1
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A55B-06
P8800IF-08
6155B-16
H6657R1-06
H6657R1-14
H6657R1-1x3
P6657I-04
P6657I-06
P6657I-20
P8800I
molex 5558
5559 MOLEX
p125l
MOLEX 4 pin
H6657P
H9848P-09-V0
5271 Molex
H8508
P825422I-03
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Untitled
Abstract: No abstract text available
Text: CONVERSION CHART MM IN C H 0 .0 5 . 002 0 .1 2 0 ,2 5 D 0 .5 0 .6 .005 I .138 4 .8 5 .0 I I 9 .0 I .354 9 .5 I .374 1.3 2 .5 10.0 10.8 11.2 12.0 N I TkP! I .024 3 .5 1.0 I .020 3 .2 0 .9 #4-40 UNC-2B THRU 2X .010 I .031 I .034 I .039 I .051 I .098 I .125 0 .8
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80963QUT
CST043NK
CAD060S92C
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PDF
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CST043NK 1437576-6
Abstract: CST043NK cst043n 600C Augat 4P3T
Text: CONVERSION CHART MM IN C H 0 .0 5 . 002 0 .1 2 0 ,2 5 D 0 .5 0 .6 .005 I .138 4 .8 5 .0 I I 9 .0 I .354 9 .5 I .374 1.3 2 .5 10.0 10.8 11.2 12.0 N I TkP! I .024 3 .5 1.0 I .020 3 .2 0 .9 #4-40 UNC-2B THRU 2X .010 I .031 I .034 I .039 I .051 I .098 I .125 0 .8
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OCR Scan
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CAD060S92C
CST-043NK
809630UT
08AWIK8.
CST043NK
CST043NK 1437576-6
cst043n
600C
Augat
4P3T
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PDF
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MT45W4MW16B
Abstract: MT45W1MW16BP23Z MT45W4MW
Text: TN-45-24: Fixed-Latency Operation in CellularRAM 1.0 Devices Introduction Technical Note Fixed-Latency Operation in CellularRAM 1.0 Devices Introduction This technical note details how Micron has enhanced CellularRAM CR1.0 functionality to include fixed-latency operation. Fixed latency operation is not officially supported by
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TN-45-24:
09005aef8244d128/PDF:
09005aef8244d132
TN4524
MT45W4MW16B
MT45W1MW16BP23Z
MT45W4MW
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PDF
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P8800I
Abstract: 640445-6 molex Connector 5264 BH1I-1X2 molex 5197 P825422I-03 H6630R1 AMP 1-480702-0 P6657I-04 2563t
Text: Equivalent connector lists for your reference. TAIWAN KING PIN TERMINAL CO., LTD. No. 23, Jiun Teh St., Shu Lin City, Taipei Hsien, Taiwan, R. O. C. TUV TEL: 886-2-26895596, 26886112 FAX: 886-2-26895569, 26886110 E-MAIL : tkp01@ms8.hinet.net http://www.tkp.com.tw
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tkp01
9848TP
9848TR
H9848P-01-V0
H9848P-02-V0
H9848P-03-V0
H9848P-04-V0
H9848P-05-V0
H9848P-06
H9848P-08-V0
P8800I
640445-6
molex Connector 5264
BH1I-1X2
molex 5197
P825422I-03
H6630R1
AMP 1-480702-0
P6657I-04
2563t
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mps2002
Abstract: SVH-21TP EN60601-1 IEC60601-1 5566-2 EN5501 DHT 11 tkp DHT
Text: 1~4 Output Medical Type 200W Medical series Features Universal AC input / Full range Low leakage current <180 A Protections: Short circuit / Overload / Over voltage / Over temperature Free air convection for 140W and forced air convection for 200W UL60601-1 medical safety approved
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UL60601-1
100KHz
EN60601-1
IEC60601-1
440Hz
370VDC.
95/230VAC
98/115VAC
115VAC,
230VAC,
mps2002
SVH-21TP
EN60601-1
IEC60601-1
5566-2
EN5501
DHT 11
tkp DHT
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PDF
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EN60601-1
Abstract: IEC60601-1 dht 22
Text: RSG RSG Electronic Components GmbH Sprendlinger Landstr. 115 D-63069 Offenbach/Germany Tel. +49 69 984047-0 Fax +49 69 984047-77 info@rsg-electronic.de www.rsg-electronic.de • ■ ELECTRONIC COMPONENTS ■ Änderungen vorbehalten / subject to change without notice
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D-63069
UL60601-1
100KHz
EN606ignment
SVH-21T-P1
MPD/T/Q-200)
Q-200)
25CFM
MPD-200
MPT/Q-200
EN60601-1
IEC60601-1
dht 22
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PDF
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CXK77B3610GB
Abstract: CXK77B3610GB-6 CXK77B3610GB-7
Text: CXK77B3610GB -6/7 High Speed Bi-CMOS Synchronous Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK77B3610GB-6/7 is a high speed 1M bit Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits. This SRAM integrates input
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CXK77B3610GB
CXK77B3610GB-6/7
CXK77B3610GB-6
166MHz
CXK77B3610GB-7
142MHz
Package30
CXK77B3610GB
BGA-119P-01
CXK77B3610GB-6
CXK77B3610GB-7
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PDF
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tkp dh2
Abstract: EN60601-1 IEC60601-1 rf transistor mps
Text: 1~4 Output Medical Type 200W Medical series Features Universal AC input / Full range Low leakage current <180 A Protections: Short circuit / Overload / Over voltage / Over temperature Free air convection for 140W and forced air convection for 200W UL60601-1 medical safety approved
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UL60601-1
100KHz
EN60601-1
IEC60601-1
440Hz
370VDC.
95/230VAC
98/115VAC
115VAC,
230VAC,
tkp dh2
EN60601-1
IEC60601-1
rf transistor mps
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PDF
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tkp dh2
Abstract: MOLEX5557 EN60601-1 mps2002 tkp DHT
Text: 2 0 0 W 1 ~ 4 O u t p u t1~4�Output�Medical for Medical Type Type m / d /etd/ iqc -a2l 0s e0r i e ss e r i e s 2 0p0sW��M Features Universal AC�input�/�Full�range Low�leakage�current�<180 A
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ctionfor140Wandforcedairconvectionfor200W
UL2601-1medicalsafetyapproved
Fixedswitchingfrequencyat100KHz
264VAC
440Hz/127
370VDC.
95/230VACPF
98/115VACatfullload
at115VAC
60Hzor
tkp dh2
MOLEX5557
EN60601-1
mps2002
tkp DHT
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PDF
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capacitors TKP
Abstract: 200w Transistor h jst 10 connector tkp 24 EN60601-1 IEC60601-1
Text: 1~4 Output Medical Type 200W Medical series Features Universal AC input / Full range Low leakage current <180 A Protections: Short circuit / Overload / Over voltage / Over temperature Free air convection for 140W and forced air convection for 200W UL60601-1 medical safety approved
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UL60601-1
100KHz
EN60601-1
IEC60601-1
440Hz
370VDC.
95/230VAC
98/115VAC
115VAC,
230VAC,
capacitors TKP
200w Transistor
h jst 10 connector
tkp 24
EN60601-1
IEC60601-1
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PDF
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mpq-200c
Abstract: tkp dh2 DHT 11 EM 2A 500VA 1500VA N6060 MPQ-200F MPX200 15V 20A led
Text: MPx-200 Series Low Cost, 1-4 Output 200W EN60601 Medical Approved AC/DC Power Supplies Key Features: • Universal AC Input - Full Range • EN60601, UL2601 (Medical) Approved • 200W Ouput Power • Low Leakage Current, <180 µA • Power Good/ Power Fail Output Signals
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MPx-200
EN60601
EN60601,
UL2601
10-minut
SVH-21T-P1
MPD-200
MPT/Q-200
mpq-200c
tkp dh2
DHT 11
EM 2A
500VA
1500VA
N6060
MPQ-200F
MPX200
15V 20A led
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PDF
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Untitled
Abstract: No abstract text available
Text: C o m p o n e n t H o ld e r s , E x p e r im e n t a l K it Part No. Type 24.0104 KP 4-2p/38 Nominal diameter 4 mm Withdraw. Rated force current - 25 A Contact resistance 0.3 mQ Two-pole component holder consists of two 4 mm .160 in dia. hollow plug pins and a holder for pin
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4-2p/38
4-2p/38.
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PDF
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UL1007
Abstract: AWG18 AWG20 AWG 24 UL1007 H6657P UL1007 20 awg UL-1007 UL1007 AWG18 tkp 24
Text: SWITCHING POWER SUPPLY D AWG AWG D #16 <1.8 #18 <1.8 #20 <1.5 #22 <1.2 DOC No Date 線 材 規 格 圖 WIRING HARNESS #24 <1.0 #26 <1.0 TWISTED TWISTED & HALF TIN DIPPED TWISTED & FULL TIN DIPPED FB-OT-S54 2002.12.26 REV A1 UNIT mm 料號 Tolerance MODEL CUSTOMER
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FB-OT-S54
H6657P24
WP43--5P1A
UL1007
UL1007
AWG18
AWG20
AWG 24 UL1007
H6657P
UL1007 20 awg
UL-1007
UL1007 AWG18
tkp 24
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PDF
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UtRAM Density
Abstract: No abstract text available
Text: K1C6416B8D UtRAM2 64Mb 4M x 16 bit Multiplexed UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1C6416B8D
UtRAM Density
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PDF
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Untitled
Abstract: No abstract text available
Text: K1C3216B8E UtRAM2 32Mb 2M x 16 bit Multiplexed UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1C3216B8E
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PDF
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UtRAM Density
Abstract: D513
Text: Preliminary UtRAM2 K1C6416B8E 64Mb 4M x 16 bit Multiplexed UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K1C6416B8E
UtRAM Density
D513
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PDF
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EMC326SP16AK
Abstract: No abstract text available
Text: Preliminary EMC326SP16AK 2Mx16 CellularRAM AD-MUX Document Title 2Mx16 bit CellularRAM AD-MUX Revision History Revision No. 0.0 History Initial Draft Draft Date Remark July 18,2007 Preliminary Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-717
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EMC326SP16AK
2Mx16
100ns
120ns
EMC326SP16AK
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PDF
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EMC646SP16K
Abstract: Burst CellularRAM Memory
Text: Preliminary EMC646SP16K 4Mx16 CellularRAM AD-MUX Document Title 4Mx16 bit CellularRAM AD-MUX Revision History Revision No. 0.0 History Initial Draft Draft Date Remark July 13,2007 Preliminary Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea
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EMC646SP16K
4Mx16
100ns
120ns
EMC646SP16K
Burst CellularRAM Memory
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PDF
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K1C1616B8B
Abstract: No abstract text available
Text: K1C1616B8B UtRAM2 16Mb 1M x 16 bit Multiplexed UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1C1616B8B
K1C1616B8B
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PDF
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Untitled
Abstract: No abstract text available
Text: MPO-200S Series Single Output, 200W Miniature, Open Frame AC/DC Power Supplies Electrical Specifications Key Features: • 200W Output Power • PFC to EN 61000-3-2,3 “D” • Universal 90-264 AC Input • EN 60950 Approved UL • Miniature 3 x 5 In Package
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MPO-200S
12VDC
P205DG-02
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104M
Abstract: N64T1618CBA
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N64T1618CBA Advance Information 64Mb Ultra-Low Power Async, Page and Burst CMOS PSRAM Overview Features The N64T1618CBA is an integrated memory
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N64T1618CBA
N64T1618CBA
23250-C
104M
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PDF
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EMC326SP16AJ
Abstract: No abstract text available
Text: Preliminary EMC326SP16AJ 2Mx16 CellularRAM Document Title 2Mx16 bit CellularRAM Revision History Revision No. 0.0 History Initial Draft Draft Date Remark July 05,2007 Preliminary Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-717
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EMC326SP16AJ
2Mx16
100ns
120ns
EMC326SP16AJ
|
PDF
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BCR150
Abstract: 104M N32T1618CBB
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N32T1618CBB Advance Information 32Mb Ultra-Low Power Async, Page and Burst CMOS PSRAM Overview Features The N32T1618CBB is an integrated memory
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N32T1618CBB
N32T1618CBB
23251-C
BCR150
104M
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