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    TK8A25DA Price and Stock

    Toshiba America Electronic Components TK8A25DA,S4X

    PB-F POWER MOSFET TRANSISTOR TO-
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    DigiKey TK8A25DA,S4X Tube 40 1
    • 1 $1.37
    • 10 $1.37
    • 100 $1.37
    • 1000 $0.40848
    • 10000 $0.325
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    Mouser Electronics TK8A25DA,S4X 402
    • 1 $1.21
    • 10 $0.599
    • 100 $0.586
    • 1000 $0.361
    • 10000 $0.325
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    Toshiba America Electronic Components TK8A25DA

    MOSFET N-Channel Enhancement Mode 250V 3-Pin TO-220SIS - Rail/Tube (Alt: TK8A25DA,S4X)
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    Avnet Americas TK8A25DA Tube 32 Weeks 50
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    • 100 $0.3874
    • 1000 $0.351
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    Toshiba America Electronic Components TK8A25DA,S4X(M

    Mosfet, N-Ch, 250V, 7.5A, To-220Sis; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:7.5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V Rohs Compliant: Yes |Toshiba TK8A25DA, S4X(M
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    Newark TK8A25DA,S4X(M Bulk 10 1
    • 1 $0.883
    • 10 $0.757
    • 100 $0.581
    • 1000 $0.447
    • 10000 $0.352
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    Chip1Stop TK8A25DA,S4X(M Bulk 2
    • 1 -
    • 10 $0.254
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    EBV Elektronik TK8A25DA,S4X(M 19 Weeks 50
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    TK8A25DA Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK8A25DA Toshiba Japanese - Transistors - Mosfets Original PDF
    TK8A25DA Toshiba Transistors - Mosfets Original PDF
    TK8A25DA,S4X Toshiba Semiconductor and Storage PB-F POWER MOSFET TRANSISTOR TO- Original PDF

    TK8A25DA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TK8A25DA MOSFETs Silicon N-Channel MOS π-MOS TK8A25DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


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    PDF TK8A25DA O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK8A25DA MOSFET シリコンNチャネルMOS形 π-MOS TK8A25DA 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 0.41 Ω (標準) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 250 V)


    Original
    PDF TK8A25DA O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK8A25DA MOSFETs Silicon N-Channel MOS π-MOS TK8A25DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


    Original
    PDF TK8A25DA O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK8A25DA MOSFETs Silicon N-Channel MOS π-MOS TK8A25DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


    Original
    PDF TK8A25DA O-220SIS

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original
    PDF BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


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    PDF

    TK12A10K3

    Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
    Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


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    PDF BCJ0082D BCJ0082C TK12A10K3 tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original
    PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05