TK3904LLD03 Search Results
TK3904LLD03 Datasheets Context Search
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate Transistors C TK3904LLD03 TRANSISTOR WBFBP-03D 1.0x1.0×0.5 unit: mm DESCRIPTION NPN Epitaxial Silicon Transistor TOP B FEATURES C 1. BASE Epitaxial Planar Die Construction |
Original |
WBFBP-03D TK3904LLD03 WBFBP-03D TK3906LLD03) 100mA 100MHz | |
marking 1NContextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate Transistors C TK3904LLD03 TRANSISTOR WBFBP-03D 1.0x1.0×0.5 unit: mm DESCRIPTION NPN Epitaxial Silicon Transistor TOP B FEATURES C 1. BASE Epitaxial Planar Die Construction |
Original |
WBFBP-03D TK3904LLD03 WBFBP-03D TK3906LLD03) 100mA 100MHz marking 1N | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate Transistors C TK3906LLD03 TRANSISTOR WBFBP-03D 1.0x1.0×0.5 unit: mm DESCRIPTION PNP Epitaxial Silicon Transistor TOP B FEATURES C 1. BASE Epitaxial Planar Die Construction |
Original |
WBFBP-03D TK3906LLD03 WBFBP-03D TK3904LLD03) -10mA -50mA 100MHz -10mA | |
IC MARKING 1005Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate Transistors C TK3906LLD03 TRANSISTOR WBFBP-03D 1.0x1.0×0.5 unit: mm DESCRIPTION PNP Epitaxial Silicon Transistor TOP B FEATURES C 1. BASE Epitaxial Planar Die Construction |
Original |
WBFBP-03D TK3906LLD03 WBFBP-03D TK3904LLD03) -10mA -50mA 100MHz -10mA IC MARKING 1005 |