Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TK20A Search Results

    SF Impression Pixel

    TK20A Price and Stock

    Toshiba America Electronic Components TK20A60W5,S5VX

    MOSFET N-CH 600V 20A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK20A60W5,S5VX Tube 31 1
    • 1 $4.13
    • 10 $4.13
    • 100 $1.9139
    • 1000 $1.46875
    • 10000 $1.46875
    Buy Now
    Mouser Electronics TK20A60W5,S5VX 86
    • 1 $4.13
    • 10 $4.05
    • 100 $1.9
    • 1000 $1.46
    • 10000 $1.46
    Buy Now

    Toshiba America Electronic Components TK20A60U(Q,M)

    MOSFET N-CH 600V 20A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK20A60U(Q,M) Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now
    Verical TK20A60U(Q,M) 50 50
    • 1 -
    • 10 -
    • 100 $2.7362
    • 1000 $2.7362
    • 10000 $2.7362
    Buy Now

    Toshiba America Electronic Components TK20A25D,S5Q(M

    MOSFET N-CH 250V 20A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK20A25D,S5Q(M Tube 50
    • 1 -
    • 10 -
    • 100 $2.0764
    • 1000 $2.0764
    • 10000 $2.0764
    Buy Now

    Toshiba America Electronic Components TK20A60W5

    Trans MOSFET N-CH 600V 20A 3-Pin TO-220SIS - Rail/Tube (Alt: TK20A60W5,S5VX)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK20A60W5 Tube 32 Weeks 50
    • 1 -
    • 10 -
    • 100 $1.37475
    • 1000 $1.30425
    • 10000 $1.30425
    Buy Now

    Toshiba America Electronic Components TK20A60W

    Trans MOSFET N-CH 600V 20A 3-Pin TO-220SIS - Rail/Tube (Alt: TK20A60W,S5VX)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK20A60W Tube 32 Weeks 50
    • 1 -
    • 10 -
    • 100 $1.2519
    • 1000 $1.1877
    • 10000 $1.1877
    Buy Now

    TK20A Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK20A
    Unknown Discontinued Transistor Data Book 1975 Scan PDF
    TK20A20D
    Toshiba TK20A20D - Nch 150V Original PDF
    TK20A25D
    Toshiba Transistors - Mosfets Original PDF
    TK20A25D
    Toshiba Japanese - Transistors - Mosfets Original PDF
    TK20A25D(Q)
    Toshiba TK20A25D - Trans MOSFET N-CH 250V 20A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK20A25D,S5Q(M
    Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 20A TO-220SIS Original PDF
    TK20A60U
    Toshiba Transistors - Mosfets Original PDF
    TK20A60U
    Toshiba Japanese - Transistors - Mosfets Original PDF
    TK20A60U(Q)
    Toshiba TK20A60U - Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK20A60U(Q,M)
    Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 20A TO-220SIS Original PDF
    TK20A60U(STA4,Q,M)
    Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 20A TO220SIS Original PDF
    TK20A60W
    Toshiba Transistors - Mosfets Original PDF
    TK20A60W
    Toshiba Japanese - Transistors - Mosfets Original PDF
    TK20A60W5,S5VX
    Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 20A TO-220 Original PDF
    TK20A60W,S5VX
    Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 20A TO220SIS Original PDF

    TK20A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TK20A60W MOSFET シリコンNチャネルMOS形 DTMOS TK20A60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.13 Ω (標準) (2)


    Original
    TK20A60W O-220SIS PDF

    K20A60U

    Abstract: TK20A60U VDD400 k20a
    Contextual Info: TK20A60U 東芝電界効果トランジスタ シリコンNチャネルMOS形 DTMOSⅡ TK20A60U ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.165Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 12 S (標準)


    Original
    TK20A60U SC-67 2-10U1B K20A60U TK20A60U VDD400 k20a PDF

    Contextual Info: TK20A20D MOSFETs Silicon N-Channel MOS π-MOS TK20A20D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.07 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


    Original
    TK20A20D O-220SIS PDF

    K20A60U

    Abstract: K20A60 TK20A60U TK-20A TK20A60
    Contextual Info: TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)


    Original
    TK20A60U K20A60U K20A60 TK20A60U TK-20A TK20A60 PDF

    TK20A25D

    Contextual Info: TK20A25D MOSFETs Silicon N-Channel MOS π-MOS TK20A25D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


    Original
    TK20A25D O-220SIS TK20A25D PDF

    Contextual Info: TK20A25D MOSFETs Silicon N-Channel MOS π-MOS TK20A25D 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


    Original
    TK20A25D O-220SIS PDF

    K20A60T

    Abstract: k20a60 TK20A60T TK20A60
    Contextual Info: TK20A60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS TK20A60T Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.165Ω (typ.) • • • High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)


    Original
    TK20A60T K20A60T k20a60 TK20A60T TK20A60 PDF

    K20A60U

    Abstract: TK20A60U k20a
    Contextual Info: TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)


    Original
    TK20A60U K20A60U TK20A60U k20a PDF

    K20A60U

    Abstract: k20a60 tk20a60u
    Contextual Info: TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)


    Original
    TK20A60U K20A60U k20a60 tk20a60u PDF

    Contextual Info: TK20A60W5 MOSFETs Silicon N-Channel MOS DTMOS TK20A60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 110 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ.) by used to Super Junction Structure : DTMOS


    Original
    TK20A60W5 O-220SIS PDF

    k20a60u

    Abstract: TK20A60U 2-10U1B 200909
    Contextual Info: TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)


    Original
    TK20A60U k20a60u TK20A60U 2-10U1B 200909 PDF

    Contextual Info: TK20A60W MOSFETs Silicon N-Channel MOS DTMOS TK20A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    TK20A60W O-220SIS PDF

    Contextual Info: TK20A60W MOSFETs Silicon N-Channel MOS DTMOS TK20A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    TK20A60W O-220SIS PDF

    Contextual Info: TK20A25D MOSFETs Silicon N-Channel MOS π-MOS TK20A25D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


    Original
    TK20A25D O-220SIS PDF

    Contextual Info: TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)


    Original
    TK20A60U PDF

    k20a60t

    Abstract: tk20a60t
    Contextual Info: TK20A60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS TK20A60T Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.165 Ω (typ.) • • • High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)


    Original
    TK20A60T k20a60t tk20a60t PDF

    K20A60T

    Abstract: TK20A60T VDD400
    Contextual Info: TK20A60T 東芝電界効果トランジスタ シリコンNチャネルMOS形 DTMOS TK20A60T ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.165Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 12 S (標準)


    Original
    TK20A60T SC-67 2-10U1B 20070701-JA K20A60T TK20A60T VDD400 PDF

    Contextual Info: TK20A25D MOSFET シリコンNチャネルMOS形 π-MOS TK20A25D 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 0.073 Ω (標準) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 250 V)


    Original
    TK20A25D O-220SIS PDF

    k20a60u

    Abstract: DTMF TONE GENERATOR TK20A60U
    Contextual Info: TK20A60U 東芝電界効果トランジスタ シリコンNチャネルMOS形 DTMOSⅡ TK20A60U ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.165Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 12 S (標準)


    Original
    TK20A60U SC-67 2-10U1B 20070701-JA k20a60u DTMF TONE GENERATOR TK20A60U PDF

    k20a60

    Contextual Info: TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)


    Original
    TK20A60U k20a60 PDF

    Contextual Info: TK20A60W5 MOSFETs Silicon N-Channel MOS DTMOS TK20A60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 110 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ.) by used to Super Junction Structure : DTMOS


    Original
    TK20A60W5 O-220SIS PDF

    Contextual Info: TK20A60W MOSFETs Silicon N-Channel MOS DTMOS TK20A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    TK20A60W O-220SIS PDF

    Contextual Info: TK20A20D MOSFETs Silicon N-Channel MOS π-MOS TK20A20D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.07 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


    Original
    TK20A20D O-220SIS PDF

    K20A60U

    Abstract: K20A60 TK20A60U 0001 TRANSISTOR 100TC
    Contextual Info: TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II TK20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)


    Original
    TK20A60U K20A60U K20A60 TK20A60U 0001 TRANSISTOR 100TC PDF