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Toshiba America Electronic Components TK12A60D(STA4,Q,M) MOSFET N-CH 600V 12A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK12A60D(STA4,Q,M)	Tube	86		1	1 $3.44 10 $3.44 100 $1.6611 1000 $1.24645 10000 $1.22	Buy Now
Avnet Americas ()	TK12A60D(STA4,Q,M)	Bulk		16 Weeks, 3 Days	1	1 $3.03 10 $2.52 100 $2 1000 $1.44 10000 $1.44	Buy Now
	TK12A60D(STA4,Q,M)	Tube		32 Weeks	50	1 - 10 - 100 $1.14192 1000 $1.08336 10000 $1.08336	Buy Now
Mouser Electronics	TK12A60D(STA4,Q,M)		104			1 $3.38 10 $3.29 100 $1.79 1000 $1.22 10000 $1.22	Buy Now
Newark	TK12A60D(STA4,Q,M)	Bulk	2,405		1	1 $3.12 10 $2.59 100 $1.72 1000 $1.3 10000 $1.25	Buy Now
EBV Elektronik	TK12A60D(STA4,Q,M)			19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components TK12A60U(Q,M) MOSFET N-CH 600V 12A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK12A60U(Q,M)	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components TK12A60W,S4VX - Rail/Tube (Alt: TK12A60W,S4VX)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK12A60W,S4VX	Tube		32 Weeks	50	1 - 10 - 100 $1.6731 1000 $1.5873 10000 $1.5873	Buy Now
Mouser Electronics	TK12A60W,S4VX		111			1 $3.59 10 $3.49 100 $2.47 1000 $1.78 10000 $1.78	Buy Now
Verical	TK12A60W,S4VX		48		4	1 - 10 $1.644 100 $1.644 1000 $1.644 10000 $1.644	Buy Now
Arrow Electronics	TK12A60W,S4VX		48		1	1 - 10 - 100 $1.644 1000 $1.644 10000 $1.644	Buy Now
Bristol Electronics	TK12A60W,S4VX		450		1	1 $6.3336 10 $4.1168 100 $2.7443 1000 $2.5968 10000 $2.5968	Buy Now

Quest Components	TK12A60W,S4VX		360			1 $8.4825 10 $8.4825 100 $3.9585 1000 $3.6758 10000 $3.6758	Buy Now
Toshiba America Electronic Components TK12A60W,S4VX(M Mosfet, N-Ch, 600V, 11.5A, To-220Sis; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11.5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.7V Rohs Compliant: Yes \|Toshiba TK12A60W, S4VX(M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	TK12A60W,S4VX(M	Bulk	757		1	1 $1.29 10 $1.29 100 $1.18 1000 $1.09 10000 $0.944	Buy Now
EBV Elektronik	TK12A60W,S4VX(M			23 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components TK12A60WS4VXM MOSFET SILICON N-CHANNEL MOS (DTMOSIV) Power Field-Effect Transistor, 11.5A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	TK12A60WS4VXM		100			1 - 10 - 100 - 1000 - 10000 -	Get Quote

TK12A60 Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
TK12A60D	Toshiba	Transistors - Mosfets	Original	PDF
TK12A60D	Toshiba	Japanese - Transistors - Mosfets	Original	PDF
TK12A60D(Q)	Toshiba	TK12A60D - Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220SIS	Original	PDF
TK12A60D(STA4,Q,M)	Toshiba	TK12A60D - Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220SIS	Original	PDF
TK12A60U	Toshiba	Japanese - Transistors - Mosfets	Original	PDF
TK12A60U	Toshiba	Transistors - Mosfets	Original	PDF
TK12A60U(Q,M)	Toshiba	TK12A60U - Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220SIS	Original	PDF
TK12A60U(STA4,Q,M)	Toshiba	TK12A60U - X35 PB-F POWER MOSFET TRANSISTOR TO-220SIS MOQ=50 V=600 PD=3	Original	PDF
TK12A60W	Toshiba	TK12A60 - TRANSISTOR POWER, FET, FET General Purpose Power	Original	PDF
TK12A60W	Toshiba	Transistors - Mosfets	Original	PDF
TK12A60W	Toshiba	Japanese - Transistors - Mosfets	Original	PDF
TK12A60W,S4VX	Toshiba	TK12A60 - Power MOSFET - Nch 500V VDSS 700V	Original	PDF

TK12A60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K12A60U Abstract: TK12A60U k12a60 code MCV marking MCV Contextual Info: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)	Original	TK12A60U K12A60U TK12A60U k12a60 code MCV marking MCV	PDF
K12A60U Abstract: K12A k12a60 Contextual Info: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)	Original	TK12A60U K12A60U K12A k12a60	PDF
K12A60D Abstract: TK12A60D Contextual Info: TK12A60D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK12A60D ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.5 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 600 V)	Original	TK12A60D K12A60D TK12A60D	PDF
K12A60U Abstract: k12a60 TK12A60U VDS208 Contextual Info: TK12A60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 TK12A60U ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.36Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.0 S (標準)	Original	TK12A60U SC-67 2-10U1B 20070701-JA K12A60U k12a60 TK12A60U VDS208	PDF
k12a60 Abstract: k12a60d Contextual Info: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)	Original	TK12A60D k12a60 k12a60d	PDF
K12A60D Abstract: TK12A60D k12a60d circuits k12a60 K12A K12A60D transistor K12A60D transistor data K-12A TK-12A Contextual Info: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)	Original	TK12A60D K12A60D TK12A60D k12a60d circuits k12a60 K12A K12A60D transistor K12A60D transistor data K-12A TK-12A	PDF
Contextual Info: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)	Original	TK12A60U	PDF
K12A60D Abstract: TK12A60D k12a60d circuits K12A60D transistor k12a60 K12A K12A60D transistor data Contextual Info: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK12A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)	Original	TK12A60D K12A60D TK12A60D k12a60d circuits K12A60D transistor k12a60 K12A K12A60D transistor data	PDF
K12A60D Abstract: TK12A60D k12a60 Contextual Info: TK12A60D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK12A60D ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.5 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 600 V)	Original	TK12A60D K12A60D TK12A60D k12a60	PDF
Contextual Info: TK12A60W MOSFETs Silicon N-Channel MOS DTMOS TK12A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA)	Original	TK12A60W O-220SIS	PDF
Contextual Info: TK12A60U 東芝電界効果トランジスタ DTMOSⅡ シリコンNチャネルMOS形 TK12A60U ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.36Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.0 S (標準)	Original	TK12A60U	PDF
Contextual Info: TK12A60W MOSFET シリコンNチャネルMOS形 DTMOS TK12A60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.265 Ω (標準) (2)	Original	TK12A60W O-220SIS	PDF
k12a60 Abstract: K12A60U TK12A60U transistor K12A Contextual Info: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)	Original	TK12A60U k12a60 K12A60U TK12A60U transistor K12A	PDF
Contextual Info: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)	Original	TK12A60U	PDF

k12a60 Abstract: K12A60U TK12A60U k12a6 K12A Contextual Info: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)	Original	TK12A60U k12a60 K12A60U TK12A60U k12a6 K12A	PDF
Contextual Info: TK12A60W MOSFETs Silicon N-Channel MOS DTMOS TK12A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching	Original	TK12A60W O-220SIS	PDF
Contextual Info: TK12A60W MOSFETs Silicon N-Channel MOS DTMOS TK12A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching	Original	TK12A60W O-220SIS	PDF
k12a60 Abstract: TK12A60U K12A60U Contextual Info: TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)	Original	TK12A60U k12a60 TK12A60U K12A60U	PDF
circuit diagram of luminous inverter Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG Contextual Info: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances	Original	BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG	PDF
5252 F 1009 4-pin Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025 Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original		PDF
fast tlp785 Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH Contextual Info: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W	Original	SCE0024F fast tlp785 TK10A60D 5252 F solar tcv7116 TPH1400ANH	PDF
TB6819 Abstract: to220sis TK12A60D TK13A60D TB6819FG TK12A60U TO220-sIS TK12J60U TK12 SSOP16 Contextual Info: 09tf-B-4 AC-DCコンバータ用CCM方式PFC制御IC TB6818FG G Continuous-Conduction Mode type Power Factor Correction PFCトランス音鳴り防止を実現特長ブロック図 ● 動作電圧範囲： 8.4 V（Min）~ 26 V（Max） ● 起動電圧：10.0 V（Typ.）	Original	09tf-B-4 TB6818FG TB6819FG TB6820FG SSOP16/DIP16 SSOP16 TK12A60D TK13A60D TK12A60U TB6819 to220sis TK12A60D TK13A60D TB6819FG TK12A60U TO220-sIS TK12J60U TK12 SSOP16	PDF
2SK3567 equivalent Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2	Original	BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF

TK12A60 Search Results

TK12A60 Price and Stock

Toshiba America Electronic Components TK12A60D(STA4,Q,M)

Toshiba America Electronic Components TK12A60U(Q,M)

Toshiba America Electronic Components TK12A60W,S4VX

Toshiba America Electronic Components TK12A60W,S4VX(M

Toshiba America Electronic Components TK12A60WS4VXM

TK12A60 Datasheets (12)

TK12A60 Datasheets Context Search

K12A60U

K12A60U

K12A60D

K12A60U

k12a60

K12A60D

K12A60D

K12A60D

k12a60

k12a60

k12a60

circuit diagram of luminous inverter

5252 F 1009 4-pin

fast tlp785

TB6819

2SK3567 equivalent

GT30F131