TK100A08N1 Search Results
TK100A08N1 Price and Stock
Toshiba America Electronic Components TK100A08N1,S4XMOSFET N-CH 80V 100A TO220SIS |
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TK100A08N1,S4X | Tube | 1 |
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TK100A08N1,S4X | Tube | 16 Weeks | 50 |
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TK100A08N1,S4X | 75 |
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Toshiba America Electronic Components TK100A08N1,S4X(SMosfet, N-Ch, 80V, 214A, To-220Sis; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:214A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Toshiba TK100A08N1,S4X(S |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK100A08N1,S4X(S | Bulk | 306 | 1 |
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TK100A08N1,S4X(S | 19 Weeks | 50 |
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TK100A08N1 Datasheets (5)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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TK100A08N1 |
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TK100A08N1 - Nch 60V
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TK100A08N1 |
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Transistors - Mosfets | Original | |||
TK100A08N1 |
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Japanese - Transistors - Mosfets | Original | |||
TK100A08N1,S4X |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 214A TO220SIS | Original | |||
TK100A08N1,S4X(S |
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TK100A08N1 - TK100A08N1,S4X(S | Original |
TK100A08N1 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TK100A08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) |
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TK100A08N1 O-220SIS | |
Contextual Info: TK100A08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) |
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TK100A08N1 O-220SIS | |
Contextual Info: TK100A08N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK100A08N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 2.6 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 80 V) |
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TK100A08N1 O-220SIS | |
Contextual Info: TK100A08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) |
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TK100A08N1 O-220SIS | |
Contextual Info: TK100A08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A08N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) |
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TK100A08N1 O-220SIS | |
fast tlp785
Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
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SCE0024F fast tlp785 TK10A60D 5252 F solar tcv7116 TPH1400ANH | |
toshiba laptop charging CIRCUIT diagram
Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
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BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120 | |
TK12A10K3
Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
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gt50jr22
Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
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SCE0024G gt50jr22 fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W |