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    TK100 Price and Stock

    Toshiba America Electronic Components TK100S04N1L,LXHQ

    MOSFET N-CH 40V 100A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK100S04N1L,LXHQ Digi-Reel 3,377 1
    • 1 $1.47
    • 10 $1.214
    • 100 $1.47
    • 1000 $0.67765
    • 10000 $0.67765
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    TK100S04N1L,LXHQ Cut Tape 3,377 1
    • 1 $1.47
    • 10 $1.214
    • 100 $1.47
    • 1000 $0.67765
    • 10000 $0.67765
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    TK100S04N1L,LXHQ Reel 2,000 2,000
    • 1 -
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    • 10000 $0.61875
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    Mouser Electronics TK100S04N1L,LXHQ 17,559
    • 1 $1.44
    • 10 $1.19
    • 100 $0.851
    • 1000 $0.644
    • 10000 $0.618
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    Toshiba America Electronic Components TK100S04N1L,LQ

    MOSFET N-CH 40V 100A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK100S04N1L,LQ Cut Tape 2,829 1
    • 1 $3.15
    • 10 $2.203
    • 100 $3.15
    • 1000 $1.1691
    • 10000 $1.1691
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    TK100S04N1L,LQ Digi-Reel 2,829 1
    • 1 $3.15
    • 10 $2.203
    • 100 $3.15
    • 1000 $1.1691
    • 10000 $1.1691
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    Mouser Electronics TK100S04N1L,LQ 402
    • 1 $3.23
    • 10 $2.19
    • 100 $1.55
    • 1000 $1.17
    • 10000 $1.13
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    Toshiba America Electronic Components TK100E10N1,S1X

    MOSFET N-CH 100V 100A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK100E10N1,S1X Tube 2,489 1
    • 1 $3.55
    • 10 $3.55
    • 100 $2.2238
    • 1000 $2.2238
    • 10000 $2.2238
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    Mouser Electronics TK100E10N1,S1X 429
    • 1 $4.9
    • 10 $3.99
    • 100 $3.23
    • 1000 $2.46
    • 10000 $2.31
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    Arrow Electronics TK100E10N1,S1X 3 1
    • 1 -
    • 10 $1.494
    • 100 $1.494
    • 1000 $1.494
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    TTI TK100E10N1,S1X Tube 50
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    • 100 $2.28
    • 1000 $2.28
    • 10000 $2.28
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    Amphenol Sine Systems AUTK-100

    UNIVERSAL HEAVY DUTY CONTACT CRI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AUTK-100 Box 176 1
    • 1 $247.37
    • 10 $227.32668
    • 100 $210.74167
    • 1000 $210.74167
    • 10000 $210.74167
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    Newark AUTK-100 Bulk 103 1
    • 1 $234.1
    • 10 $202.88
    • 100 $202.88
    • 1000 $202.88
    • 10000 $202.88
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    RS AUTK-100 Bulk 3 12 Weeks 1
    • 1 $242.82
    • 10 $216.11
    • 100 $216.11
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    • 10000 $216.11
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    Interstate Connecting Components AUTK-100 17
    • 1 $266.9474
    • 10 $249.4426
    • 100 $245.4194
    • 1000 $245.4194
    • 10000 $245.4194
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    Master Electronics AUTK-100 6
    • 1 $601.31
    • 10 $592.29
    • 100 $566.04
    • 1000 $192.86
    • 10000 $192.86
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    Waytek, Inc. AUTK-100 19 3 Weeks, 1 Days 1
    • 1 $216.31
    • 10 $202.98
    • 100 $202.98
    • 1000 $202.98
    • 10000 $202.98
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    Toshiba America Electronic Components TK100E08N1,S1X

    MOSFET N-CH 80V 100A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK100E08N1,S1X Tube 96 1
    • 1 $4.79
    • 10 $4.79
    • 100 $4.79
    • 1000 $2.22376
    • 10000 $2.22376
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    Mouser Electronics TK100E08N1,S1X 142
    • 1 $4.76
    • 10 $4.11
    • 100 $2.24
    • 1000 $2.19
    • 10000 $2.15
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    TK100 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK100 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    TK-100-0050 Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 50NS MAX Scan PDF
    TK-100-0075 Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 75NS MAX Scan PDF
    TK-100-0100 Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 100NS MAX Scan PDF
    TK-100-0150 Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 150NS MAX Scan PDF
    TK-100-0250 Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 250NS MAX Scan PDF
    TK-100-0500 Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 500NS MAX Scan PDF
    TK1000A-R015 Teccor Electronics Communications: Telecommunications Network Line Protection Original PDF
    TK1000B-N000 Teccor Electronics Communications: Telecommunications Network Line Protection Original PDF
    TK1000B-R015 Teccor Electronics Communications: Telecommunications Network Line Protection Original PDF
    TK1000N-N000 Teccor Electronics Communications: Telecommunications Network Line Protection Original PDF
    TK1000N-R015 Teccor Electronics Communications: Telecommunications Network Line Protection Original PDF
    TK1005800000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 10P SIDE ENTRY 5MM PCB Original PDF
    TK100A06N1 Toshiba TK100A06N1 - Nch 30V Original PDF
    TK100A06N1 Toshiba Japanese - Transistors - Mosfets Original PDF
    TK100A06N1 Toshiba Transistors - Mosfets Original PDF
    TK100A06N1,S4X Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 100A TO-220 Original PDF
    TK100A08N1 Toshiba TK100A08N1 - Nch 60V Original PDF
    TK100A08N1 Toshiba Transistors - Mosfets Original PDF
    TK100A08N1 Toshiba Japanese - Transistors - Mosfets Original PDF

    TK100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100F04K3L MOSFETs Silicon N-channel MOS U-MOS TK100F04K3L 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V)


    Original     		TK100F04K3L AEC-Q101 O-220SM PDF

    K100F06K

    Abstract: TK100 TK100F06K3
    Text: TK100F06K3 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIV TK100F06K3 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 • 取り扱いが簡単なエンハンスメントタイプです。


    Original     		TK100F06K3 K100F06K TK100 TK100F06K3 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100A06N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK100A06N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 2.2 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 60 V)


    Original     		TK100A06N1 O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100A10N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK100A10N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 3.1 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 100 V)


    Original     		TK100A10N1 O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100E10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)


    Original     		TK100E10N1 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100E06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original     		TK100E06N1 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications • Low leakage current: IDSS = 10 A (max) (VDS = 40 V) • Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)


    Original     		TK100F04K3 PDF

    TK100L60W

    Abstract: 2-21F1S
    Text: TK100L60W MOSFETs Silicon N-Channel MOS DTMOS TK100L60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.015 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		TK100L60W TK100L60W 2-21F1S PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100F04K3L MOSFETs Silicon N-channel MOS U-MOS TK100F04K3L 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)


    Original     		TK100F04K3L O-220SM PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100A08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


    Original     		TK100A08N1 O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100E06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original     		TK100E06N1 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original     		TK100A06N1 O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100E10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)


    Original     		TK100E10N1 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100E08N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK100E08N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 2.6 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 80 V)


    Original     		TK100E08N1 O-220 PDF

    toshiba transistor date code marking

    Abstract: TK100F06K3 K100F06K
    Text: TK100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 174 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		TK100F06K3 toshiba transistor date code marking TK100F06K3 K100F06K PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100E08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


    Original     		TK100E08N1 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100E06N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK100E06N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 1.9 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 60 V)


    Original     		TK100E06N1 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 174 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		TK100F06K3 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100A10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)


    Original     		TK100A10N1 O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original     		TK100A06N1 O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100S04N1L MOSFETs Silicon N-channel MOS U-MOS-H TK100S04N1L 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)


    Original     		TK100S04N1L PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100E08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


    Original     		TK100E08N1 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100E06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original     		TK100E06N1 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK100L60W MOSFETs Silicon N-Channel MOS DTMOS TK100L60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.015 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		TK100L60W PDF