P1007LS12
Abstract: No abstract text available
Text: Fast Turn Off Thyristors - Capsule Type Type Part No. Old Part No. VDRM ITAV VRRM TK=55°C V A I2t 10ms ½ sine ITSM VR 60% VRRM A A2s tq @ 200V/µs Typ. Reverse Recovery Charge TJM, 50% Chord Qr @ITM @-di/dt VT0 rT TJM @TJM RthJK d.c. 180° sine µs µC A
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P0848YS06C
P280SH06
P0848YS06D
P1007LS12D
P300SH12
P1007LS12E
P1007LS12F
P1007LS12
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p0273sc
Abstract: P202PH12 P0128SJ12E
Text: Fast Turn Off Thyristors - Stud Types Type VDRM ITAV VRRM TC=55°C I2t 10ms ½ sine ITSM VR 60% VRRM tq Typ. Reverse Recovery Charge @ TJM, 50% Chord 200V/µs Qr 2 @ ITM @-di/dt VT0 rT TJM RthJC @ TJM 180° sine Fig. No. Westcode "P" series of fast switching thyristors have regenrative gate structure to ensure low switching losses and high di/dt perofrmance. "P" Series devices are particularly attractive to; Inverter, DC chopper drives, UPS and Pulse
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P0431SC06C
P270PH06
P0431SD04B
P0431SD04C
P0431SD06B
P0431SD06C
p0273sc
P202PH12
P0128SJ12E
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N195PH16
Abstract: N170PH12 N086PH12 N105PH12 N105PH16 N0335SC160 N0180SH120 N0290SG120 N195PH12 N0131SH120
Text: Type VDRM ITAV VRRM TC=55°C ITSM I2t 10ms ½ sine VT0 rT @TJM VR ≤60% VRRM Part No. Old Part No. V A A N0131SH120 N0131SH160 New> N0131SJ120 New> N0131SJ160 N0180SH120 N0180SH160 New> N0180SJ120 New> N0180SJ160 N0290SC120 N0290SC160 New> N0290SG120 New> N0290SG160
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N0131SH120
N0131SH160
N0131SJ120
N0131SJ160
N0180SH120
N0180SH160
N0180SJ120
N0180SJ160
N0290SC120
N0290SC160
N195PH16
N170PH12
N086PH12
N105PH12
N105PH16
N0335SC160
N0180SH120
N0290SG120
N195PH12
N0131SH120
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MBR40100PT
Abstract: Sirectifier Semiconductors 40HF P460
Text: MBR40100PT High Tjm +175oC Schottky Barrier Diodes A C A Dimensions TO-247AD A C A C(TAB) A=Anode, C=Cathode, TAB=Cathode MBR40100PT VRRM V 100 Symbol VDC V 100 Characteristics Maximum DC Reverse Current At Rated DC Blocking Voltage 0.780 0.819 0.800 0.845
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MBR40100PT
175oC)
O-247AD
125oC
MBR40100PT
Sirectifier Semiconductors
40HF
P460
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MBRB2515L
Abstract: No abstract text available
Text: MBRB2515L Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-263 D2PAK C(TAB) A C A C A=Anode, C=Cathode, TAB=Cathode MBRB2515L VRRM V 15 VRMS V 10.5 Symbol 1. 2. 3. 4. VDC V 15 Characteristics Gate Collector Emitter Collector Botton Side
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MBRB2515L
O-263
300us
MBRB2515L
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MBR30150PT
Abstract: MBR30200 MBR30200PT MBR30100PT
Text: MBR30100PT thru MBR30200PT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode MBR30100PT MBR30150PT MBR30200PT VRRM V 100 150 200 VRMS V 70 105 140 Symbol VDC V 100 150 200
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MBR30100PT
MBR30200PT
O-247AD
125oC
MBR30150PT
MBR30200
MBR30200PT
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MBR20100CT
Abstract: MBR2070CT MBR2080CT MBR2090CT
Text: MBR2070CT thru MBR20100CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-220AB A C A C TAB A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode MBR2070CT MBR2080CT MBR2090CT MBR20100CT VRRM V 70 80 90 100 VRMS V
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MBR2070CT
MBR20100CT
O-220AB
MBR2070CT
MBR2080CT
MBR2090CT
125oC
MBR20100CT
MBR2080CT
MBR2090CT
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MBR10100CT
Abstract: MBR1070CT MBR1080CT MBR1090CT
Text: MBR1070CT thru MBR10100CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-220AB A C A C TAB A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode MBR1070CT MBR1080CT MBR1090CT MBR10100CT VRRM V 70 80 90 100 VRMS V
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MBR1070CT
MBR10100CT
O-220AB
MBR1070CT
MBR1080CT
MBR1090CT
125oC
MBR10100CT
MBR1080CT
MBR1090CT
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MBR10200
Abstract: MBR10150
Text: MBR10150 thru MBR10200 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR10150 MBR10200 VRRM V 150 200 VRMS V 105 140 Symbol VDC V 150 200 Test Conditions o Dim. A B C D E
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MBR10150
MBR10200
O-220AC
MBR10150
MBR10200
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10N100
Abstract: 12N100Q 125OC d 209 l ixfT12N10 10N100Q
Text: HiPerFETTM Power MOSFETs Q Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM
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IXFH/IXFT12N100Q
IXFH/IXFT10N100Q
O-247
12N100Q
10N100Q
728B1
10N100
12N100Q
125OC
d 209 l
ixfT12N10
10N100Q
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MBR4030PT
Abstract: MBR4035PT MBR4040PT MBR4045PT
Text: MBR4030PT thru MBR4045PT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode MBR4030PT MBR4035PT MBR4040PT MBR4045PT VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 Symbol VDC V 30
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MBR4030PT
MBR4045PT
O-247AD
MBR4030PT
MBR4035PT
MBR4040PT
125oC
MBR4035PT
MBR4040PT
MBR4045PT
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MBR3050PT
Abstract: MBR3060PT
Text: MBR3050PT thru MBR3060PT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode MBR3050PT MBR3060PT VRRM V 50 60 VRMS V 35 42 Symbol VDC V 50 60 Characteristics Maximum DC Reverse Current
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MBR3050PT
MBR3060PT
O-247AD
MBR3050PT
125oC
300us
MBR3060PT
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1N100
Abstract: No abstract text available
Text: Advance Technical Information High Voltage MOSFET IXTH 1N100 IXTT 1N100 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 1.5 A IDM TC = 25°C, pulse width limited by TJM
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1N100
O-268
O-247
728B1
1N100
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MBR10100
Abstract: MBR1070 MBR1080 MBR1090
Text: MBR1070 thru MBR10100 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR1070 MBR1080 MBR1090 MBR10100 VRRM V 70 80 90 100 VRMS V 49 56 63 70 Symbol
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MBR1070
MBR10100
O-220AC
MBR1070
MBR1080
MBR1090
125oC
MBR10100
MBR1080
MBR1090
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MBR8100L
Abstract: MBR870L MBR880L MBR890L
Text: MBR870L thru MBR8100L Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR870L MBR880L MBR890L MBR8100L VRRM V 70 80 90 100 VRMS V 49 56 63 70 Symbol
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MBR870L
MBR8100L
O-220AC
MBR870L
MBR880L
MBR890L
125oC
MBR8100L
MBR880L
MBR890L
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MBR6030PT
Abstract: MBR6035PT MBR6040PT MBR6045PT
Text: MBR6030PT thru MBR6045PT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode MBR6030PT MBR6035PT MBR6040PT MBR6045PT VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 Symbol VDC V 30
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MBR6030PT
MBR6045PT
O-247AD
MBR6030PT
MBR6035PT
MBR6040PT
100oC
12Width,
O-247AD
MBR6035PT
MBR6040PT
MBR6045PT
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MBR4050PT
Abstract: MBR4060PT
Text: MBR4050PT thru MBR4060PT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode MBR4050PT MBR4060PT VRRM V 50 60 VRMS V 35 42 Symbol VDC V 50 60 Characteristics Maximum DC Reverse Current
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MBR4050PT
MBR4060PT
O-247AD
MBR4050PT
125oC
125oC
300us
MBR4060PT
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information PolarTM P & N-Channel Power MOSFETs Common Drain Topology P CH. N CH. - 150V 150V - 22A 36A RDS on 110mΩ Ω 40mΩ Ω trr(typ) 228ns 150ns FMP36-015P VDSS 43 ID25 T1 5 34 T2 11 22 Symbol Test Conditions Maximum Ratings TJ TJM
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228ns
150ns
FMP36-015P
50/60HZ,
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MBR10200CT
Abstract: MBR10150CT
Text: MBR10150CT thru MBR10200CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-220AB A C A C TAB A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode MBR10150CT MBR10200CT VRRM V 150 200 VRMS V 105 140 Symbol VDC V 150
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MBR10150CT
MBR10200CT
O-220AB
MBR10150CT
125oC
120oC
MBR10200CT
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MBR5100
Abstract: MBR580
Text: MBR580 thru MBR5100 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR580 MBR5100 VRRM V 80 100 VRMS V 56 70 Symbol VDC V 80 100 Characteristics
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MBR580
MBR5100
O-220AC
MBR580
125oC
300us
MBR5100
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MBR5200
Abstract: MBR5150
Text: MBR5150 thru MBR5200 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR5150 MBR5200 VRRM V 150 200 VRMS V 105 140 Symbol VDC V 150 200 Characteristics
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MBR5150
MBR5200
O-220AC
MBR5150
125oC
MBR5200
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM HiPerFET N-Channel Power MOSFET Phase leg Topology VDSS ID25 FMM22-06PF 3 3 T1 55 RDS on trr(max) = = ≤ ≤ 600V 12A Ω 350mΩ 200ns 4 4 T2 1 1 22 Symbol Test Conditions TJ TJM Tstg ISOPLUS i4-PakTM Maximum Ratings
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FMM22-06PF
200ns
50/60HZ,
338B2
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AX1209
Abstract: LF40100M LF40100
Text: A fa tjm m an A M P com pany RF MOSFET Power Transistor, 100W, 40V 500 -1000 MHz Features r.i Gold Metallized • Com m on Source Configuration Input Matched • Push-Pull Resfet Structure • Applications Broadband Linear O peration Lower Capacitances for
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LF40100M
AX1209
LF40100M
LF40100
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Untitled
Abstract: No abstract text available
Text: Series 4448 Surface Mount High Current Power Toroids SERIES 4448 POWDERED IRON CORE ite Pot, Terminal #1 I t - \s ¿ ir s j 4 M fia tJM =* i S ta rt 99 1 4448-02M 4448-04M 4448-06M 4448-08M 4448-10M 4448-12M 4448-14L 4448- 16L 4448- 18L 4448-20L 4448-22L 4448-24L
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4448-02M
4448-04M
4448-06M
4448-08M
4448-10M
4448-12M
4448-14L
4448-20L
4448-22L
4448-24L
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