TIP161 TRANSISTOR Search Results

PLL IC 566

Abstract: automotive ignition tip162 TIP162 TIP161 transistor TIP160 TIP161 100 amp npn darlington power transistors TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON
Contextual Info: Æ&MOS PEC NPN SILICON POWER DARLINGTON TRANSISTORS NPN TIP160 .designed for use in automotive ignition, switching and motor con­ trol applications. FEATURES: TIP161 * Collector-Emitter Sustaining VoltageV ceo «sus > = 320 V Min -TIP160 = 350 V (Min)-TIP161

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 TIP161 Silicon NPN Darlington Power Transistor DESCRIPTION 1 • Collector-Emitter Sustaining Voltage: VCEo(suS)=350V(Min) • Low Collector-Emitter Saturation Voltage-

TIP162

Abstract: BY205-600 diode by205 by205 diode tip160 TIP161 tip162 to-3p
Contextual Info: e Ifi AN SYS TIPI 60, TIP161, TIP162 NPN SILICON POWER DARLINGTONS HiCTRONICS LIMITED SOT-93 PACKAGE TOP VIEW 50 W at 25°C Case Temperature C C 1 ^ CM 15 A Peak Collector Current B C o 10 A Continuous Collector Current 3 ^ \ O Maximum VCE(Sat) of 2.8 V at lc = 6.5 A

TIP162

Abstract: diode by205 by205 diode BY205-600 IRF140 TIP160 TIP161
Contextual Info: TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE sat of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO SOT-93 PACKAGE (TOP VIEW)

Contextual Info: TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE sat of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO SOT-93 PACKAGE (TOP VIEW)

TIP162

Abstract: diode by205 tip160 US Global Sat tip162 to-3p
Contextual Info: TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE sat of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO SOT-93 PACKAGE (TOP VIEW)

BY205-600

Abstract: TIP162 by205 diode BY205/600 diode by205 TIP160 by205 IRF140 TIP161 TIP161 transistor
Contextual Info: TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE sat of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO SOT-93 PACKAGE (TOP VIEW)

diode by205

Abstract: TIP162 by205 by205 diode BY205/600 BY205-600 IRF140 TIP160 TIP161
Contextual Info: TIP160, TIP161, TIP162 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE sat of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO

automotive ignition tip162

Abstract: tipi transistor equivalent 369-41 369-42 equivalent to tip162 P6019 P6020 TIP160 tektronix p6019 tipi transistor
Contextual Info: TEXAS INSTR ÌOPTO> 8961726 TEXAS IN STR 003^.^30 dìT| OPTO 62C 36 93 8 TIPI 60, TIPI 61, TIPI 62 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 198 4 50 W at 100°C Case Temperature T—33-29 10 A Rated Continuous Collector Current

TIP162

Abstract: automotive ignition tip162 TIP160 TIP161 npn DARLINGTON 10A tip162 to-3p
Contextual Info: Inchange Semiconductor Product Specification TIP160/161/162 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・DARLINGTON ・10A rated continuous collector current APPLICATIONS ・For use in automotive ignition,switching and motor control applications

automotive ignition tip162

Abstract: TIP162 TIP160 DARLINGTON 10A TIP161 tip162 to-3p
Contextual Info: SavantIC Semiconductor Product Specification TIP160/161/162 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·DARLINGTON ·10A rated continuous collector current APPLICATIONS ·For use in automotive ignition,switching and motor control applications

c2689

Abstract: C2689 equivalent automotive ignition tip162 T1P160 equivalent to tip162
Contextual Info: TEXAS INSTR ÌOPTO> d ìT | 8961 72 6 TEXAS INSTR OPTO 003^.^30 62C 36938 TIPI 60, TIPI 61, TIPI 62 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V ISE D O C T O B E R 1 9 84 50 W at 100°C Case Temperature T-33-29 10 A Rated Continuous Collector Current

Contextual Info: TIPI 60, TIPI 61, TIPI 62 NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • 50 W at 25°C Case Temperature • 10 A Continuous Collector Current • 15 A Peak Collector Current • Maximum VCE Satj of 2.8 V at lc = 6.5 A

Tip 162

Abstract: TIP150 T1P151 TIP151 TIP152 TIP161 TIP162 tipi transistor ScansUX225 1973 transistor
Contextual Info: TIPI 50, TIPI 51, TIPI 52 NPN SILICON POWER DARLINGTONS JU N E 1973 • R E V IS E D M AY 1995 • 80 W at 25°C Case Temperature • 7 A Continuous Collector Current • 10 A Peak Collector Current • Maximum VcE sat of 2 V at Ic = 5 A • ■cexcsus) 7 A at rated V(BRjCEO

r3381

Abstract: R3498 buv49 MP150s tipl763 TIC263M transistor BD245 BDW85-S buv48s BD250C-S
Contextual Info: CIRCUIT PROTECTION PRODUCTS February, 2006 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team SOT-93 Packaged Power Transistor & Thyristor Product Change Notification PCN Tracking Number BLBF40 - Mold Compound Change

TIC106D equivalent

Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers

TIC106M SCR

Abstract: TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent
Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers

MJ3001 equivalent

Abstract: MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc

motorola MJ15001

Abstract: BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —

TIP142 TRANSISTOR REPLACEMENT

Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V

2SC105

Abstract: 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N4923* Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp

All similar transistor 2sa715

Abstract: 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc

BU108

Abstract: 2SC1629 equivalent BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:

2SA1046

Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.