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    TIP 642 TRANSISTOR Search Results

    TIP 642 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TIP 642 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LT6441R-81

    Abstract: lt644
    Text: 3Northway Lane North Latham,New York 12110. Tollfree:1.800.984.5337 Phone:1.518.956.2980 Fax:1.518.785.4725 Http://www.marktechopto.com SPECIFICATION PART NO. : MT4164S4-HR6-2-A 4.8mm ROUND LED LAMP WITH HOLDER MT4164S4-HR6-2-A 4.8mm ROUND LED LAMP WITH HOLDER


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    PDF MT4164S4-HR6-2-A 26AWG LT6441R-81 lt644

    mt436

    Abstract: No abstract text available
    Text: 3Northway Lane North Latham,New York 12110. Tollfree:1.800.984.5337 Phone:1.518.956.2980 Fax:1.518.785.4725 Http://www.marktechopto.com SPECIFICATION PART NO. : MT4363-HR-A 2.9mm ROUND LED LAMP ATTENTION OBSERVE PRECAUTION FOR HANDLING ELECTRO STATIC SENSITIVE


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    PDF MT4363-HR-A mt436

    MT1303A-UR-A

    Abstract: No abstract text available
    Text: 3Northway Lane North Latham,New York 12110. Tollfree:1.800.984.5337 Phone:1.518.956.2980 Fax:1.518.785.4725 Http://www.marktechopto.com SPECIFICATION PART NO. : MT1303A-UR-A 3.0mm ROUND LED LAMP ATTENTION OBSERVE PRECAUTION FOR HANDLING ELECTRO STATIC SENSITIVE


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    PDF MT1303A-UR-A MT1303thin MT1303A-UR-A

    MT4118-HR-A

    Abstract: No abstract text available
    Text: 3Northway Lane North Latham,New York 12110. Tollfree:1.800.984.5337 Phone:1.518.956.2980 Fax:1.518.785.4725 Http://www.marktechopto.com SPECIFICATION PART NO. : MT4118-HR-A 5.0mm ROUND LED LAMP ATTENTION OBSERVE PRECAUTION FOR HANDLING ELECTRO STATIC SENSITIVE


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    PDF MT4118-HR-A 2007/10/thin MT4118-HR-A

    Untitled

    Abstract: No abstract text available
    Text: 3Northway Lane North Latham,New York 12110. Tollfree:1.800.984.5337 Phone:1.518.956.2980 Fax:1.518.785.4725 Http://www.marktechopto.com SPECIFICATION PART NO. : MT4118A-HRSB-A 5.0mm ROUND LED LAMP ATTENTION OBSERVE PRECAUTION FOR HANDLING ELECTRO STATIC SENSITIVE


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    PDF MT4118A-HRSB-A

    Untitled

    Abstract: No abstract text available
    Text: 3Northway Lane North Latham,New York 12110. Tollfree:1.800.984.5337 Phone:1.518.956.2980 Fax:1.518.785.4725 Http://www.marktechopto.com SPECIFICATION PART NO. : MT430-HR-A 4.9mm ROUND LED LAMP ATTENTION OBSERVE PRECAUTION FOR HANDLING ELECTRO STATIC SENSITIVE


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    PDF MT430-HR-A

    Untitled

    Abstract: No abstract text available
    Text: 3Northway Lane North Latham,New York 12110. Tollfree:1.800.984.5337 Phone:1.518.956.2980 Fax:1.518.785.4725 Http://www.marktechopto.com SPECIFICATION PART NO. : MT4194-HR-A 1.0x4.8mm RECTANGULAR LAMP STEP TYPE ATTENTION OBSERVE PRECAUTION FOR HANDLING ELECTRO STATIC


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    PDF MT4194-HR-A 20thin

    Untitled

    Abstract: No abstract text available
    Text: 3Northway Lane North Latham,New York 12110. Tollfree:1.800.984.5337 Phone:1.518.956.2980 Fax:1.518.785.4725 Http://www.marktechopto.com SPECIFICATION PART NO. : MT6203-HRG-A 3.0mm ROUND BI- POLAR LAMP 3LEADS ATTENTION OBSERVE PRECAUTION FOR HANDLING ELECTRO STATIC


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    PDF MT6203-HRG-A

    600w class d circuit diagram schematics

    Abstract: TM 1628 IC SCHEMATICS DIAGRAM P6KE200A equivalent 30F126 AP6KE300CA diode P6KE 100 A TISPA79R241 SMBJ40A/CA-TR ZP1400 1SMB5.0CAT3
    Text: ASD and Discrete Products PROTECTION Devices and IPADs™ Improving the Immunity of your System Designer’s Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL


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    PDF SGPROTECT/1001 600w class d circuit diagram schematics TM 1628 IC SCHEMATICS DIAGRAM P6KE200A equivalent 30F126 AP6KE300CA diode P6KE 100 A TISPA79R241 SMBJ40A/CA-TR ZP1400 1SMB5.0CAT3

    P1.5KE SMCJ

    Abstract: transistor 603 11f smd DALC P1,5KE TIP290 m 9583 transistor axial diode 1.5Se 24 5KE56CA TISPA79R241 3A143
    Text: Protection devices Selection guide April 2006 www.st.com 2 Contents Introduction 4 Product references 5 ESD production Standards and technical recommendations EOS and ESD transient voltage suppressor: Transil 6 6 8 Data protection against ESD 13 Telecom protection


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    PDF categori7/637 SGPROTE0406 P1.5KE SMCJ transistor 603 11f smd DALC P1,5KE TIP290 m 9583 transistor axial diode 1.5Se 24 5KE56CA TISPA79R241 3A143

    628 SOT23-6

    Abstract: wg sot23-8 MAX6715 MAX6716UTLTD3-T MAX6729 MAX672
    Text: 19-2325; Rev 3; 6/03 Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits These devices monitor primary supply voltages VCC1 from 1.8V to 5.0V and secondary supply voltages (VCC2) from 0.9V to 3.3V with factory-trimmed reset threshold voltage options (see Reset Voltage Threshold Suffix Guide). An


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    PDF MAX6715 MAX6729 628 SOT23-6 wg sot23-8 MAX6716UTLTD3-T MAX6729 MAX672

    Untitled

    Abstract: No abstract text available
    Text: 19-0536; Rev 0; 4/06 Dual/Triple, Ultra-Low-Voltage, SOT23 µP Supervisory Circuits The MAX6715AMAX6729A are ultra-low-voltage microprocessor µP supervisory circuits designed to monitor two or three system power-supply voltages. These devices assert a system reset if any monitored supply falls below its


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    PDF MAX6715A MAX6729A MO178. OT-23,

    MAX6715

    Abstract: No abstract text available
    Text: 19-2325; Rev 5; 12/05 Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits The MAX6715MAX6729 are ultra-low-voltage microprocessor µP supervisory circuits designed to monitor two or three system power-supply voltages. These devices assert a system reset if any monitored supply falls below its factorytrimmed or adjustable threshold and maintain reset for a


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    PDF MAX6715â MAX6729 MAX6729 MAX6715

    Untitled

    Abstract: No abstract text available
    Text: 19-2325; Rev 4; 2/05 Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits The MAX6715MAX6729 are ultra-low-voltage microprocessor µP supervisory circuits designed to monitor two or three system power-supply voltages. These devices assert a system reset if any monitored supply falls below its factorytrimmed or adjustable threshold and maintain reset for a


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    PDF MAX6715 MAX6729 MO178. OT-23,

    TLP 527

    Abstract: tlp527 2N 60 Application notes TIP527 TIP528 2N4998 2N5685 TIP640
    Text: TYPES TIP527, TIP528 P-N-P SILICON POWER TRANSISTORS FOR P O W ER -A M PLIFIE R A N D H IG H -SPEED -SW ITC H IN G A P PLIC A TIO N S r mechanical data • 20 0 V Min V B R C E O • 8-A Rated Continuous Collector Current • 60 Watts at 100°C Case Temperature


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    PDF TIP527, TIP528 TLP 527 tlp527 2N 60 Application notes TIP527 2N4998 2N5685 TIP640

    2N6884

    Abstract: 2N5683 2N5684 c358c 2N5685 2N4998 TIP640
    Text: TYPES 2NS683, 2N5684 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR P O W ER -A M PLIFIER A N D H IG H-SPEED-SW ITCHING A P PLIC A TIO N S DESIG N E D FOR C O M P LE M E N TA R Y USE W ITH 2N 5685, 2IM5686 V • 300 Watts at 25°C Case Temperature | •


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    PDF 2NS683, 2N5684 2N5685, 2IM5686 2N5683 2N5684 2N6884 c358c 2N5685 2N4998 TIP640

    TLP647

    Abstract: TIP 642 transistor transistor 2N 3792 BV 642 TIP640 TIP641 TIP642 TIP645 TIP646 TIP647
    Text: TYPES TIP645, TIP646, TIP647 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED IFOR COMPLEMENTARY USE WITH TIP640, TIP641, TIP642 175 W at 25°C Case Temperature • Min h f e of 1000 at 4 V , 5 A 10-A Rated Collector Current • 100 mJ Reverse Energy Rating


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    PDF TIP645, TIP646. TIP647 TIP640, TIP641, TIP642 TLP647 TIP 642 transistor transistor 2N 3792 BV 642 TIP640 TIP641 TIP645 TIP646

    P647

    Abstract: TLP647 npn tip TIP640 TIP641 TIP642 TIP-641 3987 777T TIP645
    Text: SA N Y O NPN TIP640 TIP641 TIP642 SEMICONDUCTOR PNP TIP645 TIP646 TIP647 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-80-100 VOLTS, 10 AMPERE HIGH CURRENT GAIN hFE = 4000 typ. @3V, 5A LOW SATURATION VOLTAGE V c e SAT = 1.0V typ. @5A MONOLITHIC CONSTRUCTION WITH BUILT-IN


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    PDF TIP640 TIP645 TIP641 TIP646 TIP642 TIP647 TIP640, TIP645 TIP641, TIP646 P647 TLP647 npn tip TIP-641 3987 777T

    TIP 642 transistor

    Abstract: transistor 2N 3792 2N5333 4998 transistor 2N4300 APPLICATION MIN 5758 2N DIODE TIP 75 transistor
    Text: TYPE 2N5333 P-N-P EPITAXIAL PLANAR SILICON POWER TRANSISTOR FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4300 15 W at 100°C Case Temperature Max V E|„, of 0.45 V at 1 A Typ ton of 150 ns at 1 A l c lc


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    PDF 2N5333 2N4300 150ns TIP 642 transistor transistor 2N 3792 2N5333 4998 transistor 2N4300 APPLICATION MIN 5758 2N DIODE TIP 75 transistor

    transistor 2N 3792

    Abstract: 2N5153 2n6151 2N5005 2N5151 2N5003 TIP 642 transistor 2N5005 TO-59 2N5002 2N5004
    Text: TYPES 2N5003, 2 N 5 0 0 5 . 2N5151. 2N51S3 P-N-P SILICON POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY For Complementary Use With 2N5002, 2N5004, 2N5152, 2N5154 15 mJ Reverse Energy Rating with I q - 10 A and 4 V Reverse Bias


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    PDF 2N5003, 2N5005. 2N5151. 2N51S3 2N5002, 2N5004 2N5152 2N5154 2NB003, 2N500S transistor 2N 3792 2N5153 2n6151 2N5005 2N5151 2N5003 TIP 642 transistor 2N5005 TO-59 2N5002

    2N5001

    Abstract: 2n5149 2N5147 2N5000 transistor 2N 3792 2N4999 2N5001 ti APPLICATION for MIN 5758 2N4998 2N5148
    Text: TYPES 2N 4999, 2N5001, 2N5147, 2N5149 P-N-P SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TR A N S IS TO R S W ITH C O M P U TER -D ESIG N ED IS O TH E R M A L G E O M E TR Y I * For Complementary Use With 2 N 49 98, 2 N 50 00, 2N 5 1 4 8 , and 2N 51 50


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    PDF 2N4999, 2N5001, 2N5147. 2N5149 2N4998, 2N5000, 2N5148, 2N5150 2N4999. 2N5001 2N5001 2N5147 2N5000 transistor 2N 3792 2N4999 2N5001 ti APPLICATION for MIN 5758 2N4998 2N5148

    2n2222 texas instruments

    Abstract: BY206 TIPL757 TIPL757A n-p-n r.f. power transistors npn 1000V 15A D037D
    Text: TEX AS I NST R -COPTO} ta DE JflTblTEt. D D 3 7 D 4 4 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C 37044 D f ,7""- 3S-/S“ TIPL757, TIPL757A N-P-N SILICON POWER TRANSISTORS i electrical characteristics at 25 ° C case temperature (unless otherwise noted) - PARAM ETER


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    PDF TIPL757, TIPL757A TIPL757 TIPL757A TIPL760, TIPL760A TIPL761 2n2222 texas instruments BY206 n-p-n r.f. power transistors npn 1000V 15A D037D

    NE900474-15

    Abstract: NE900474 NE900474-13 14012 cl NE9004 NE900400G DS 45-800
    Text: Ku-BAND POWER GaAs MESFET FEATURES NE9004 SERIES NE900474-13.-15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER CLASS A OPERATION HIGH POWER ADDED EFFICIENCY EMPLOYS P.H.S. PLATED HEAT SINK AND VIA HOLE GROUNDING BROAD BANDWIDTH INPUT OF PACKAGED DEVICE PARTIALLY MATCHED


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    PDF NE9004 NE900474-13 NE9001 AN-1001 NE900474-15 NE900474 14012 cl NE900400G DS 45-800

    Untitled

    Abstract: No abstract text available
    Text: S E M I C O N D U C T O R eo-Speed 8-Bit R-2R gital-to-Analog Converter GENERAL DESCRIPTION FEATURES The Harris CA3338 family are CMOS/SBS highjSfVied R 2R voltage output digital-to-analog convert^rsfThey oper­ ate from a single 5V supply at video speeds, and can pro­


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    PDF CA3338 ICAN-6525. A3338A CA3338, CA3338A