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    TIP 420 TRANSISTOR Search Results

    TIP 420 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TIP 420 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tip420

    Abstract: tip 420 tip 420 transistor 79R251 bourns tisp 79R241 TISP4015H1BJR transistor tip 420 TISP4040H1BJ tip 222 transistor
    Text: Customized TISP Pairs For Solid State Relay LCAS Protection 15 V, 30 V & 40 V TISP® To Protect High-frequency Digital Telecom Lines Features Our new TISP4125x3BJ & TISP4219x3BJ are coordinated pairs of protectors designed to protect Solid State Relays. Solid State Relays are


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    PDF TISP4125x3BJ TISP4219x3BJ TISP4700F3 TISP3700F3 TISP4700F3s tip420 tip 420 tip 420 transistor 79R251 bourns tisp 79R241 TISP4015H1BJR transistor tip 420 TISP4040H1BJ tip 222 transistor

    MSA4709A

    Abstract: 24v 8 channel Relay driver transistor ZR Equivalent of transistor tip 420 TIP 22 transistor tip 420 transistor pabx transister relay driver circuit using transistor pnp transister symbol
    Text: E2A0032-16-X0 ¡ Semiconductor MSA4709A ¡ Semiconductor This version: MSA4709A Jan. 1998 Previous version: Nov. 1996 Subscriber Line Interface Circuit GENERAL DESCRIPTION The MSA4709A is designed to provide BSH functions and to meet PABX transmission performance


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    PDF E2A0032-16-X0 MSA4709A MSA4709A SDIP30-P-400-1 24v 8 channel Relay driver transistor ZR Equivalent of transistor tip 420 TIP 22 transistor tip 420 transistor pabx transister relay driver circuit using transistor pnp transister symbol

    tip 410 transistor

    Abstract: TRANSISTOR BI 187 tip 420 transistor
    Text: TR225 Telecommunications Switch Transistor / 1 Form A Relay DESCRIPTION The TR225 is a dual function circuit designed specifically as a telecommunications switch. It has an optically isolated solid state relay function that is separated from its transistor output detector function. The relay portion is composed of an LED on the input


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    PDF TR225 TR225 tip 410 transistor TRANSISTOR BI 187 tip 420 transistor

    TR215

    Abstract: No abstract text available
    Text: TR215 Telecommunications Switch Transistor / 1 Form A Relay DESCRIPTION The TR215 is a dual function circuit designed specifically as a telecommunications switch. It has an optically isolated solid state relay function that is separated from its transistor output detector function. The relay portion is composed of an LED on the input


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    PDF TR215 TR215

    TR125

    Abstract: No abstract text available
    Text: TR125 Telecommunications Switch Transistor / 1 Form A Relay DESCRIPTION The TR125 is a dual function circuit designed specifically as a telecommunications switch. It has an optically isolated solid state relay function that is separated from its transistor output detector function. The relay portion is composed of an LED on the input


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    PDF TR125 TR125 applicat-10

    TR115

    Abstract: No abstract text available
    Text: TR115 Telecommunications Switch Transistor / 1 Form A Relay DESCRIPTION The TR115 is a dual function circuit designed specifically as a telecommunications switch. It has an optically isolated solid state relay function that is separated from its transistor output detector function. The relay portion is composed of an LED on the input


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    PDF TR115 TR115 applicat-20

    Philips DC Power Amplifier 380

    Abstract: tip 420 transistor BGY148A BGY148B SC09
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BGY148A; BGY148B UHF amplifier modules Preliminary specification File under Discrete Semiconductors, SC09 1996 May 20 Philips Semiconductors Preliminary specification UHF amplifier modules BGY148A; BGY148B FEATURES PINNING - SOT421A


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    PDF BGY148A; BGY148B OT421A Philips DC Power Amplifier 380 tip 420 transistor BGY148A BGY148B SC09

    SM-05

    Abstract: mlc avx capacitors cte cte table epoxy substrate g11 epoxy glass
    Text: TECHNICAL INFORMATION PROCESSING GUIDELINES FOR S.M.P.S. MULTILAYER CERAMIC CAPACITORS by John Maxwell and Mark Doty AVX Corporation Olean, NY Abstract: Surface mount technology and high current layout techniques will be used as high frequency switch mode power supplies move to one


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    PDF S-MPGC00M0401-R SM-05 mlc avx capacitors cte cte table epoxy substrate g11 epoxy glass

    cte table epoxy

    Abstract: No abstract text available
    Text: TECHNICAL INFORMATION PROCESSING GUIDELINES FOR S.M.P.S. MULTILAYER CERAMIC CAPACITORS by John Maxwell and Mark Doty AVX Corporation Olean, NY Abstract: Surface mount technology and high current layout techniques will be used as high frequency switch mode power supplies move to one


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    PDF SMP0-539-1501 S-MPGC00M0401-R cte table epoxy

    fotodiode

    Abstract: DN013 iC-WG-BLCC-WGC2 ga01 transistor tip 1050 G301 G302 G501 dpi 602 G702
    Text: iC-WG 14-BIT DIFFERENZLICHT-SENSOR EIGENSCHAFTEN ANWENDUNGEN ♦ Hoher Gleichlauf und technische Zuverlässigkeit durch monolithischen Aufbau mit integrierten Fotodioden ♦ Kleiner Spurenabstand von 600µm ♦ Aufhebung von Dunkelströmen durch differentielle Abtastung


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    PDF 14-BIT 28-pin fotodiode DN013 iC-WG-BLCC-WGC2 ga01 transistor tip 1050 G301 G302 G501 dpi 602 G702

    QCI-39000

    Abstract: No abstract text available
    Text: SECTION 11 PACKAGING Commercial/Industrial Outlines and Parameters . 11-1 Product Tape and Reel Specifications . 11-52


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    PDF DS00049Q-page 24LC65-I/SN PIC16C54-RCI/SO DS30258C-page QCI-39000

    QCI-39000

    Abstract: C04090 C04-067
    Text: SECTION 11 PACKAGING Commercial/Industrial Outlines and Parameters . 11-1 Product Tape and Reel Specifications . 11-52


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    PDF DS00049N-page 11-ii 24LC65-I/SN PIC16C54-RCI/STemperature DS30258C-page QCI-39000 C04090 C04-067

    MO-193 footprint

    Abstract: CA 4570 QCI-39000
    Text: PACKAGING Commercial/Industrial Outlines and Parameters PART NUMBER SUFFIX DESIGNATIONS: XXXXXXXXXX Device Type Options -XX X Speed or Temperature Frequency /XX XXX Package Pattern Examples: 24LC65-I/SN PIC16C54-RCI/SO Memory Products Microcontroller Products


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    PDF 24LC65-I/SN PIC16C54-RCI/SO 28CXX 93LCXX MO-193 footprint CA 4570 QCI-39000

    Untitled

    Abstract: No abstract text available
    Text: INSTR b2 -COPTO} DE JfiTLlTHb 0 0 3 7 Q S 3 S TEXAS INSTR OPTO ¿2C 37053 D TIPL760, TIPL760A, TIPL761, TIPL761A N-P-N SILICON POWER TRANSISTORS 1~~ 3 2 - 1 2 REVISED OCTOBER 1984 • 8 0 W /1 0 0 W a t 2 5 ° C Case Temperature • 4 A Continuous Collector Current


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    PDF TIPL760, TIPL760A, TIPL761, TIPL761A O-220AB O-218AA TIPL761A T-53-/3 IPL760

    Untitled

    Abstract: No abstract text available
    Text: 5642214 N/A-CON m/a-com semiconductor SEMICONDUCTOR 930 T3 00638 PE|St4ESm T '3 < 7 . o DDDDtaa s ' 0 V~ MA4F200 Series ûallium Arsenide Power Field Effect Transistor GaAs FET Preliminary Data Sheet Description and Applications The MA4F200 series is a 1 micron recessed gate


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    PDF MA4F200

    g1283

    Abstract: No abstract text available
    Text: "Ëâ 0037011 0 TEXAS INSTR -COPTO} 8961726 TEXAS INSTR <OPTO> _ ì 62C 37011 TIPL751, TIPL751A N-P-N SILICON POWER TRANSISTORS T T OCTOBER 1982 - REVISED OCTOBER 1984 • 120 W a t 2 5 ° C C ase Temperature • 4 A Continuous Collector Current •


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    PDF TIPL751, TIPL751A TIPL751 L751A T1PL751A g1283

    2n2222 texas instruments

    Abstract: BY206 TIPL757 TIPL757A n-p-n r.f. power transistors npn 1000V 15A D037D
    Text: TEX AS I NST R -COPTO} ta DE JflTblTEt. D D 3 7 D 4 4 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C 37044 D f ,7""- 3S-/S“ TIPL757, TIPL757A N-P-N SILICON POWER TRANSISTORS i electrical characteristics at 25 ° C case temperature (unless otherwise noted) - PARAM ETER


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    PDF TIPL757, TIPL757A TIPL757 TIPL757A TIPL760, TIPL760A TIPL761 2n2222 texas instruments BY206 n-p-n r.f. power transistors npn 1000V 15A D037D

    Untitled

    Abstract: No abstract text available
    Text: r Z Z SGS-THOMSON [¡Ä^ [iyi©ra [ii©s TDA7250 60 W HI-FI DUAL AUDIO DRIVER • WIDE SUPPLY VOLTAGE RANGE : 20 TO 90 V + 10 to + 45 V ■ VERY LOW DISTORTION ■ AUTOMATIC QUIESCENT CURRENT CONTROL FOR THE POWER TRANSISTORS WITHOUT TEMPERATURE SENSE


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    PDF TDA7250 DIP20 TDA7250 7T2T237 0Db45D5 D0b4512

    BUV62

    Abstract: bux c
    Text: THOMSON MIL ET SPATIAUX 5SE ]> Wt TDSbôTE □ DOGM'ìD ÔTT • THCM 'T '- j y ~ } f DISCRETE COMPONENTS o o DESCRIPTION PRODUCT PACKAGE .£ o “O l-o 80 <! ö BIPOLAR POWER TRANSISTORS BUT 90 VCEO sus = 125 V 1C = 50 A ■ BUT 91 VC EO (sus) = 200 V 1C = 50 A


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    PDF T03modified* BUT92A BUT100 BUT102 BUV18 BUV19 BUV26 BUV28 BUV39 BUV40 BUV62 bux c

    diac D30

    Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
    Text: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED


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    PDF OT-23 C-120, conventN1711 2N1893 2N2102 2N2218A 2N2219A 2N3019 2N3503 2N3700 diac D30 db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551

    Untitled

    Abstract: No abstract text available
    Text: THOMSON MIL E T SPATIAUX SSE D • TD2bö7B ODOGHTO ÔTT ■ T H C M ' T ' - j y * f DISCRETE COMPONENTS DESCRIPTION PRODUCT PACKAGE o o ■ti» o .E o “O •*> SÖ <Ö BIPOLAR POWER TRANSISTORS BUT 90 V C E O = 125 V 1C = 5 0 A ■ BUT 91 V C E O (s u s ) = 2 0 0 V


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    PDF BUT92A BUV18 BUV19

    JAM transister

    Abstract: A4709A
    Text: E2A0032-16-XO O K I Semiconductor MSA4709A This version: Jan. 1998 Previous version: Nov. 1996 S ubscriber Line Interface Circuit G ENERAL DESCRIPTION The MS A4709A is designed to provide BSH functions and tomeetPABX transmission performance requirements.


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    PDF E2A0032-16-XO MSA4709A A4709A SDIP30-P-400-1 JAM transister

    mark 74w npn

    Abstract: Line Input AC to DC Conversion and Input Filter Capacitor Selection IAC24 tip 420 transistor PNP Relay Driver tip darlington pnp AL24 IL400 MSA4709A MSA4709ASS
    Text: E2A0032-16-XO O K I Semiconductor P rev io u s version: N ov. 1996 M SA 4709A Subscriber Line Interface Circuit GENERAL DESCRIPTION The MSA4709A is designed to provide BSH functions and to meet PABX transmission performance requirements. This device provides two-wire to four-wire conversion function Hybrid .


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    PDF E2A0032-16-XO MSA4709A MSA4709A SDIP30-P-400-1 mark 74w npn Line Input AC to DC Conversion and Input Filter Capacitor Selection IAC24 tip 420 transistor PNP Relay Driver tip darlington pnp AL24 IL400 MSA4709ASS

    tip 420 transistor

    Abstract: Philips DC Power Amplifier 380 MDA206 BGY148A BGY148B TRANSISTOR C 460
    Text: Philips Semiconductors Product specification HF amplifier modules BGY148A; BGY148B FEATURES P IN N IN G -S O T421A • Single 6 V nominal supply voltage PIN DESCRIPTION • 3 W output power 1 RF input • Easy control of output power by DC voltage 2 Vc • Silicon bipolar technology


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    PDF BGY148A; BGY148B BGY148A BGY148B OT421A OT421A tip 420 transistor Philips DC Power Amplifier 380 MDA206 TRANSISTOR C 460