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    TIM44 Price and Stock

    Infineon Technologies AG CY8C4246LTI-M445

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    Infineon Technologies AG CY8C4126LTI-M445

    IC MCU 32BIT 64KB FLASH 68QFN
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    DigiKey CY8C4126LTI-M445 Tray 1
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    FLIP ELECTRONICS CY8C4126LTI-M445

    IC MCU 32BIT 64KB FLASH 68QFN
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    TIM44 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TIM4450-12UL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM4450-16 Toshiba TIM4450 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-16G1B, 3 PIN, FET RF Power Original PDF
    TIM4450-16 Toshiba Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM4450-16L Toshiba Low Distortion Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM4450-16SL Toshiba TIM4450 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, 2-16G1B, 3 PIN, FET RF Power Original PDF
    TIM4450-16UL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM4450-16UL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM4450-25UL Toshiba Original PDF
    TIM4450-30L Toshiba Low Distortion Internally Matched Power GaAs FETs (C-Band) Original PDF
    TIM4450-35SL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM4450-4 Toshiba TIM4450 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-11D1B, 3 PIN, FET RF Power Original PDF
    TIM4450-4 Toshiba Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM4450-45SL Toshiba C-Band Power GaAs IMFETs; Frequency Band (GHz): 4.4-5.0; P1dB (dBm): 46.5; G1dB (dB): 9.5; Ids (A) Typ.: 9.6; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 0.8; Package Type: 2-16G1B Original PDF
    TIM4450-45SL Toshiba Microwave Power GaAs FET Scan PDF
    TIM4450-45SL Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM4450-4L Toshiba Low Distortion Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM4450-4SL Toshiba TIM4450 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11D1B, 2 PIN, FET RF Power Original PDF
    TIM4450-4UL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM4450-60SL Toshiba C-Band Power GaAs IMFETs; Frequency Band (GHz): 4.4-5.0; P1dB (dBm): 48; G1dB (dB): 9.5; Ids (A) Typ.: 13.2; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 0.6; Package Type: 2-16G1B Original PDF
    TIM4450-60SL Toshiba Microwave Power GaAs FET Original PDF

    TIM44 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 4.4 GHz to 5.0 GHz • High gain - G 1dB = 9.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		TIM4450-16 UnW50530196 MW50530196 TPM4450-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM4450-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level „ HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz


    Original     		TIM4450-8SL TIM4450-8UL PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM4450-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level „ HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz


    Original     		TIM4450-8SL TIM4450-8UL PDF

    TIM4450-4

    Abstract: TPM4450-4
    Text: TOSHIBA TIM4450-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 4.4 GHz to 5.0 GHz • High gain - G1dB = 10.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM4450-4 2-11D1B) MW50490196 TPM4450-4 TIM4450-4 PDF

    TIM4450-16UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM4450-16UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES nHIGH POWER P1dB=42.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=10.0dB at 4.4GHz to 5.0GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		TIM4450-16UL TIM4450-16UL PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power * P-idB = 45 dBm at 4.4 GHz to 5.0 GHz


    OCR Scan     		TIM4450-30L IM4450-30L MW50550196 002237b PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM4450-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM4450-4UL PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - I M 3 = -45 d B c at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 4.4 GHz to 5.0 GHz


    OCR Scan     		TIM4450-8L MW50520196 4450-8L PDF

    TIM4450-60SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM4450-60SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level „ HIGH POWER P1dB=48.0dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz


    Original     		TIM4450-60SL TIM4450-60SL PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM4450-16SL PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT n BROAD BAND INTERNALLY MATCHED P1dB=42.5dBm at 4.4GHz to 5.0GHz n HERMETICALLY SEALED PACKAGE n HIGH GAIN G1dB=9.0dB at 4.4GHz to 5.0GHz RF PERFORMANCE SPECIFICATIONS Ta= 25° C


    Original     		TIM4450-16SL 42uipment TIM4450-16SL 2-16G1B) PDF

    TIM4450-8UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM4450-8UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=10.5dB at 4.4GHz to 5.0GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C


    Original     		TIM4450-8UL TIM4450-8UL PDF

    TIM4450-8ul

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM4450-8UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=10.5dB at 4.4GHz to 5.0GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS


    Original     		TIM4450-8UL TIM4450-8ul PDF

    TIM4450-16

    Abstract: TPM4450-16
    Text: TOSHIBA TIM4450-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 4.4 GHz to 5.0 GHz • High gain - G1dB = 9.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM4450-16 2-16G1B) MW50530196 TPM4450-16 TIM4450-16 PDF

    TIM4450-8

    Abstract: TPM4450-8
    Text: TOSHIBA TIM4450-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 4.4 GHz to 5.0 GHz • High gain - G1dB = 9.5 dB at 4.4 GHz to 5.0 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM4450-8 2-11D1B) MW50510196 TPM4450-8 TIM4450-8 PDF

    ip 4056

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 4.4 GHz to 5.0 GHz • High gain - G 1dB = 10.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		TIM4450-4 MW50490196 TPM4450-4 ip 4056 PDF

    TIM4450-8ul

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM4450-8UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=10.5dB at 4.4GHz to 5.0GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		TIM4450-8UL Disto29 TIM4450-8ul PDF

    TIM4450-4UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM4450-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		TIM4450-4UL TIM4450-4UL PDF

    IC ADD 3501

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R TIM4450-16 TECHNICAL DATA FEATURES: • HIGH POWER PidB = 42.5 dBm at 4.4 GHz to 5.0 GHz BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 9-0 dB at 4.4 GHz to 5.0 GHz HERMETICALLY SEALED PACKAGE


    OCR Scan     		TIM4450-16 ------TIM4450-16--------------------POWER TIM4450-16 IC ADD 3501 PDF

    TIM4450-35SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM4450-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level „ HIGH POWER P1dB=45.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz


    Original     		TIM4450-35SL TIM4450-35SL PDF

    TIM4450-8SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM4450-8SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level „ HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz


    Original     		TIM4450-8SL TIM4450-8SL PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM 3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power ' P-idB = 36 dBm at 4.4 G H z to 5.0 GHz


    OCR Scan     		TIM4450-4L TIM4450-4L MW50500196 PDF

    TIM4450-12UL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM4450-12UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=41.5dBm at 4.4GHz to 5.0GHz HIGH GAIN G1dB=10.5dB at 4.4GHz to 5.0GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C


    Original     		TIM4450-12UL Dist31 TIM4450-12UL PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET M ICROW AVE SEM ICO NDU CTO R TIM4450-45SL TECHNICAL DATA FEATURES : • LOW INTERMODULATION DISTORTION HIGH GAIN IM3 = - 45 dB c at Po = 35. 5 dBm, G 1dB = 9.5 dB at 4.4 GHz to 5.0 GHz BROAD BAND INTERNALLY MATCHED Single Carrier Level


    OCR Scan     		TIM4450-45SL 2-16G1B) PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 34.5 dBm, - Single carrier level • High power • P-idB = 45 dBm at 4.4 GHz to 5.0 GHz


    OCR Scan     		TIM4450-30L MW50550196 TIM4450-30L PDF