TIC 136 TRANSISTOR Search Results

L2503

Contextual Info: I # l • HIGH-SPEED TRANSISTOR OPTOCOUPLERS OPTOELECTRONI CS -f I , ■ HCPL-2503 HCPL-4502 6N136 6N135 PACKAGE DIMENSIONS DESCRIPTION 6i ft & ¿3 T h e H C P L-4502/H G P L-2503 a n d 6N 136/5 o p to c o u p le rs c o n ta in a 700 nm G aA sP LED e m itte r, w h ic h is o p tic a lly

8d136

Abstract: transistor BD 141 transistor BD 110 BD140 BD13S transistor bd 138 transistor 136 138 140 transistor BD 140 BD 140 transistor Transistors bd 133
Contextual Info: 2sc D • aaasb o s 0004337 3 PIMP Silicon Transistors IS IE ß r ÖA337 /7 D* SIEMENS AKTIEN6ESELLSCHAF — BD 136 BD 138 BD 140 For A F d riv e r and o u tp u t stag es o f m e d iu m p erfo rm a n c e BD 1 3 6 , BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 1 2 6

transistor BD 141

Contextual Info: 25C D • aaasbos 0 0 0 4 3 3 7 3 ISIEG r TW 3-/7 ÖA337 PIMP Silicon Transistors D SIEMENS AKTIENGESELLSCHAF — BD 136 BD 138 BD 140 For AF d river and o u tp u t stages of m e d iu m p erform ance BD 136, BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 126

TIC 136 Transistor

Abstract: mrf475 tic 136 mrf475 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF475 The RF Line 12 W PEP — 12 W (CW) — 30 MHz NPN SILICON RF POWER TRANSISTOR R F POWER TRANSISTO R . . . designed prim arily for use in single sideband linear amplifier output applications in citizens band and other communications

AFY42

Abstract: U120 103MHZ 400M GR22B Germanium Transistor Germanium mesa SZ2B
Contextual Info: AFY42 PNP Mesa transistor for pre-stages, mixer and oscillator stages up to 900 MHz AFY 42 is a germanium PNP mesa transistor in a case 18 A 4 DIN 41 876 TO —72 . The leads are electrically insulated from the case. It is particularly suitable for use in

Contextual Info: , Ltna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF342 SILICON POWER NPN TRANSISTOR DESCRIPTION: PACKAGE STYLE TO-220AB MRF342 is designed for VHP amplifier applications operating to 150MHz.

transistor bd 126

Abstract: bd 136 BD 138 bo 135 hi-fi bd bf AMPLIFICATEUR BD136
Contextual Info: B D 136 B D 138 PNP SILICON TRANSISTORS, PLANAR T R A N S IS T O R S P N P S IL IC IU M , P L A N A R Compì, of BD 135, 6D 137 PRELIM INARY DATA N O T IC E P R E L I M IN A I R E These transistors are intended for a wide variety of medium power complementary symetry appli­

125CV

Contextual Info: Tem ic sllico„,x_ 2N7224JANTX/JANTXV N-Channel Enhancement-Mode Transistors Product Summary VD S V rDS(on) (Ö ) I d (A) 100 0.081 34 Parametric limits in accordance with M IL -S-19500!592 where applicable. TO-254AA H erm etic P ackage O

J122 MARKING

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor D esigned for am plifier, frequency m ultiplier, or oscillator applications in industrial equipment constructed with surface m ount com ponents. Suitable for use as output driver or pre-driver stages in VHF and UHF equipment.

MRF344

Abstract: transistor D 2588 MRF340 MRF342 erie redcap 221A-04 RF POWER TRANSISTOR NPN 150 watts power amplifier layout TRANSISTOR 2586
Contextual Info: MOTOROLA SC XSTRS/R F 4bE b 3 b 7 2 S M OOTMbO? 1 » MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 60 W 1 0 0 -1 5 0 M H z R F POW ER T R A N S IS T O R NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . . d e s ig n e d p r im a r ily f o r u s e in V H F a m p lifie r s w it h a m p litu d e

BD 139 N

Abstract: transistor BD 141 bd139
Contextual Info: 2SC D • 023Sfc.GS 0QQ4332 4 c NPN Silicon Transistors SIEG D: BD 135 BD 137 BD 139 SIEMENS AKTIEN6ESELLSCHAF For AF driver and output stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to

2SB541

Abstract: 2SD388 2SD 388 A triple diffused mesa
Contextual Info: SEC SILICON POWER TRANSISTORS ELECTBM DEVICE 2SB 541 2 S D 3 8 8 AUDIO FREQUENCY POWER AMPLIFIER PN P/N PN SILICON TRIPLE DIFFUSED MESA TRANSISTOR D ESCRIPTIO N PACKAGE DIM EN SIO N S The 2SB541 in millimeters inches and 2SD388 are triple diffused mesa transistors

TIC 136 Transistor

Abstract: 2.22 pf trimmer
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor MRF4427R2 D e s ig n e d fo r a m p lifie r, fre q u e n c y m u ltip lie r, o r o s c illa to r a p p lic a tio n s in in d u stria l e q u ip m e n t co n s tru c te d w ith su rfa c e m o u n t c o m p o n e n ts . S u ita b le fo r

8D139

Abstract: bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135
Contextual Info: 2SC D • 053SbOS 0004332 4 « S I E G ^ - NPN Silicon Transistors ■ T ^ Ï'O T — BD 135 BD 137 SIEMENS AKTIEN6ESELLSCHAF- BD 139 For AF driver and ou tp u t stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126

Contextual Info: PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC converters, and in general purpose switching

MRF262

Abstract: MRF264 MRF260 MRF261
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF261 The RF Line 10W 136 175 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed for 12.5 Volt VHF large-signal power am plifier appli­ cations in commercial and industrial equipment. NPN SILICO N

Contextual Info: / T T SGS-THOMSON ^ 7 # S D 1480 RF & MICROWAVE TRANSISTORS _ VHF APPLICATIONS • . ■ . ■ . 136 - 175 MHz 28 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING ■ P o u t = 125 W MIN. WITH 9.2 dB GAIN

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring stable blocking voltage, fast switching and high thermal cycling performance with lowthermal resistance. Intended

PH BUK456

Abstract: TIC 136 Transistor buk456-100b
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

2N6764 JANTX

Abstract: 2N6763 2n6764
Contextual Info: POWER MOSFET TRANSISTORS , JTX JTXV¡¡Jgg 100 Volt, 0.055 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching

transistor 81 110 w 63

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •

Contextual Info: BC556 to 558 _ SILICON PLANAR EPITAXIAL TRANSISTORS G eneral p u rp o s e p-n -p tra n s is to rs in p la s tic T O -9 2 p a cka g e . QUICK REFERENCE D A T A C o lle c to r- e m itte r v o lta g e + V g £ = 0 V C o lle c to r- e m itte r v o lta g e (o pen base)

sm 41056

Abstract: 32N25E TIC 136 Transistor 25C312
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW32N25E TMOS E-FET ' Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TMOS POWER FET 32 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate

MRF342

Abstract: transistor D 2581 RF340
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF342 The RF Line 24 W 1 0 0 -1 5 0 MHz R F POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . d e s ig n e d p rim a rily fo r use in V H F a m p lifie rs w ith a m p litu d e m o d u la tio n and