TIC 122 TRANSISTOR Search Results

TIC 122 Transistor

Abstract: bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157
Contextual Info: .2 5 C D • 023SbO S NPN Silicon Transistors GQGMCH? *? MSIEG ■ _ W ~/l SIEMENS A K T IE N G E S E L L S C H A F C 1 2 1 1 ! B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32

2f5 transistor

Abstract: Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75
Contextual Info: a s c ì> • a23SbOS 0004?13 S » S I E G T - ti- n BFT 75 NPN Silicon RF Broadband Transistor - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 23 6 plastic package 23 A 3 DIN 41869 , intended fo r use in low-noise input and intermediate stages in RF

transistor a750

Abstract: F240 transistor TIC 122 Transistor Germanium power tic 122
Contextual Info: r. 2 S C D • f l S3 SbO S G0 G4 G7 b 1 H SIE6 PIMP Germanium RF Transistor - S I E M E N S AF240 AKTIENGESELLSCHAF fo r m ixe r and o sc illa to r sta g e s up to 9 0 0 M H z A F 24 0 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads

1BW TRANSISTOR

Contextual Info: T 3 9 -3 / FF 50 R 06 KL SE E EU P E C • 3M G 32T7 0 0 0 0 ^4 E b fi HUPEC Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/p e r module DC, pro Zwelg / per arm RthCK pro Baustein/per module pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften

1BW TRANSISTOR

Abstract: diode sg 5 ts
Contextual Info: EUPEC 5 2 E J> FF 100 R 06 KF 34032^7 m 0000212 003 «UPEC 7 = 3 9 - 3 / Thermische Eigenschaften Transistor Transistor Rthjc Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 100 A RthCK le Thermal properties

Contextual Info: 7 ^ 3 9 - 3 / FF 75 R 06 KL ElIPEC S2E D Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 75 A RthCK lc 0000504 Thermische Eigenschaften Transistor Transistor 34Q32T7 T3 7 • U P E C Thermal properties DC, pro Baustein / per module

1BW TRANSISTOR

Contextual Info: FF 25 R 06 KF SEE T> EUPEC Thermische Eigenschaften Transistor Transistor 34D32T7 OOQGlflb n i H U P E C Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 25 A RfhCK lc Thermal properties DC, pro Baustein/per module DC, pro Zweig /p e r arm

AFY16

Abstract: Germanium Transistor 71lb 21b22
Contextual Info: AFY16 PNP Transistor for RF-application up to 900 MHz The A FY 16 is a germanium PNP RF mesa transistor in a case 18 A 4 DIN 41 876 TO-72 . The terminals are electrically insulated from the case. The AFY 16 is designed for use in pre-stages as well as in mixer and oscillator stages up to 900 MHz.

TIC 122 Transistor

Abstract: TIC 136 Transistor motorola mjl transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGY40N60D Insulated Gate Bipolar Transistor with Anti-Parallel Diode M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO -264 40 A @ 90 C 66 A @ 25 C 600 VOLTS

TIC48

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF2000-5L The RF Line M icrowave Linear Power Transistor Motorola Preferred Device Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2 .0 G H z frequency range. • 7 .0 -8 .0 dB GAIN

NEC varistor

Abstract: 1S1209 VD1222 VD1221 1s1211 VD1120 VD1212 NEC green varistor varistor nec VD1220
Contextual Info: NEC SILICON VARISTOR 1S1209 ~ 1S1212 ELECTRON DEVICE VD1120~ VD1223 FEATURES • Silicon D iode V aristor fo r Voltage and S u ita b le fo r vo lta g e and te m p e ra tu re co m p e n sa tio n o f B-class Tem perature Com pensation o f Transistor p u s h -p u ll a m p lifie r.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MGW20N120 Insulated G ate Bipolar Transistor M o to ro la P re fe rre d D e v ic e N-Channel Enhancement-Mode Silicon Gate This In su la ted G ate B ipo la r T ra n sisto r IG B T u ses an a d va n ce d

Transistor BFT 99

Abstract: BFT75 Q62702-F513 siemens CIB BFt 66 Transistor BFT 44
Contextual Info: asc D fi23SbOS QGG4713 S mSIZG ; • T -H 'H NPN Silicon RF Broadband Transistor BFT 75 - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 236 plastic package 23 A 3 DIN 41869 , intended for use in low-noise input and intermediate stages in RF

Contextual Info: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz

transistor VCE 1000V

Abstract: 1BW TRANSISTOR EUPEC T
Contextual Info: EUPEC •52E D FF 7 5 R 10 K ■ 3M032T7 000G20ti flOT H U P E C 7 =3 f 3 / Transistor Transistor Thermische Eigenschaften Thermal properties DC, pro Baustein / per module RthJC DC, pro Zweig / per arm pro Baustein / per module RthCK pro Zweig / per arm Elektrische Eigenschaften

PS571

Abstract: BR571L TE 2241 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M PS571 M M B R 571L The RF Line N PN S ilicon High Frequency Transistors lc = 80 mA LOW NOISE HIGH FREQUENCY TRANSISTORS . . . d e s ig n e d fo r lo w n o is e , w id e d y n a m ic ra n g e fro n t- e n d a m p lifie r s a n d lo w - n o is e

Contextual Info: W hü1 H E W L E T T mLttM P A C K A R D NPN Silicon Bipolar Common Emitter Transistor T f e c h n ic a l D a t a AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies • +25.0 dBm P| d[5 and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ.

AT-38043

Contextual Info: What HEW LETT* mLliM P A C K A R D NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies • +25.0 dBm P| d[5 and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ. • 15 dB GldB @ 900 MHz,

LN800

Abstract: C2E1 F400 diode f400
Contextual Info: ^ 3 7 -3 / F 400 R 06 KF EUPEC S2E ]> 3M D 3ET7 D 0 D D 2 5 fl Thermische Eigenschaften Itansistor Transistor • Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 400 A •c 1Q Ô B IU P E C Thermal properties

Q002

Abstract: transistor BU 110 BU 500 DT 1BW TRANSISTOR
Contextual Info: T Î3 9 -3 / F 300 R 06 KL SEE EUPEC 34G32T7 D T1 7 « U P E C Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein /per module 0,1 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 600 V 300 A RthCK

HXTR-6105

Abstract: S21E HPAC-100
Contextual Info: LOW NOISE TRANSISTOR H E W L E T T ^ P A CKA RD COMPONENTS Features HXTR-6105 «* — 1.0 J0.04 TYP LOW NOISE FIGURE 4.2 dB Maximum at 4 GHz Guaranteed HIGH GAIN 9 dB Typ. at NF Bias Conditions WIDE DYNAMIC RANGE RUGGED HERMETIC PACKAGE Co-fired Metal/Ceramic Construction

GP141

Abstract: MRW53102 GP-141 MRW53402 TRW53102
Contextual Info: MOTOROLA • SEM ICONDUCTOR TECHNICAL DATA M R W 53102 Series The RF Line M ic ro w a v e Linear P o w e r T ra n sisto rs 7 TO 8 dB 1 -3 GHz 1.6 WATTS MICROWAVE LINEAR POWER TRANSISTORS . . . desig n ed p rim a rily fo r large-signal o u tp u t and d rive r a m p lifie r stages in th e 1 to 3

1BW TRANSISTOR

Abstract: F300R06KF R600
Contextual Info: 7 =3 f - 3 / F300R 06K F EUPEC SEE • 3M 032T7 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 300 A le 2 ^ O O O O B M fl Thermische Eigenschaften Transistor Transistor D HUPEC Thermal properties DC, pro Baustein/p e r module

MA4T64400

Abstract: low noise transistors MA4T645 MA4T644
Contextual Info: Silicon Low Noise Transistors Silicon Bipolar High fT Low IVoise Microwave Transistors M A4T64400 Series Features MA4T64435 - fT to 11 G H z Micro-X L o w N o ise F igu re at Low B ias V o lta g e H igh A sso cia te d G ain • H e rm e tic and S u rfa c e M o u n t