24LC64P
Abstract: LTST-C170FKT C0805C104K5RAC7800 liteon keyboard GRM40X7R105K16PT GRM40X7R105K16 C0605 C0805 TPS2149 TPS77018DBVR
Text: USB Keyboard/Hub EVM Featuring the TPS2149 3.3ĆV LDO and Dual Switch User’s Guide September 2001 Mixed Signal Products SLVU050 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications,
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TPS2149
SLVU050
24LC64P
LTST-C170FKT
C0805C104K5RAC7800
liteon keyboard
GRM40X7R105K16PT
GRM40X7R105K16
C0605
C0805
TPS2149
TPS77018DBVR
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ZNR 361
Abstract: znr 431 ERZE11A361 znr 10 471
Text: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.
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communica911
ZNR 361
znr 431
ERZE11A361
znr 10 471
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C1608X7R1H102KT
Abstract: C1608X5R1A105KT Display Power r7 resistor TPS65100 transistor K 603 C2012X5R0J475KT QFN-24 TDK lcd TPS65100EVM-030
Text: Application Report SLVU173 – June 2006 TFT LCD Display Power Supply Solutions Using the TPS65100 Triple Output Supply Sahana Chandra . PMP Portable Power ABSTRACT
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SLVU173
TPS65100
C1608X7R1H102KT
C1608X5R1A105KT
Display Power
r7 resistor
transistor K 603
C2012X5R0J475KT
QFN-24
TDK lcd
TPS65100EVM-030
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E10561
Abstract: E10391
Text: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.
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ERZE14A561
ERZE14A112
E10561
E10391
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E11751
Abstract: E14471 E8471 E14431 E11271 E14201
Text: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.
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ERZE14A561
ERZE14A112
E11751
E14471
E8471
E14431
E11271
E14201
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znr 471 varistor
Abstract: ZNR 471 ZNR 391 znr3 varistor znr 431 znr 270 ZNR 241 varistor SEC 471 10 znr 621 varistor znr e 471
Text: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.
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ERZE07F331
ERZE07F511
ERZE08F201
ERZE08F331
ERZE08F471
ERZE08F561
ERZE11F201
ERZE11F331
ERZE11F561
ERZE11F681
znr 471 varistor
ZNR 471
ZNR 391
znr3 varistor
znr 431
znr 270
ZNR 241
varistor SEC 471 10
znr 621 varistor
znr e 471
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znr 14 k 201 varistor
Abstract: znr 14 k 221 varistor znr 10 k 621 varistor znr k 821 varistor znr k 201 varistor znr 14 k 361 varistor znr 20 k 391 varistor thyristor CSG2001-14A04 Znr 14 k 391 znr k 391 varistor
Text: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.
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znr 14 k 361 varistor
Abstract: znr 14 k 221 varistor thyristor CSG2001-14A04 znr k 391 varistor znr 14 k 201 varistor znr 14 k 330 varistor znr k 201 varistor znr3 ZNR 471
Text: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.
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thyristor CSG2001-14A04
Abstract: No abstract text available
Text: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.
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ERZE05Fâ
ERZE07Fâ
ERZE08Fâ
ERZE10Fâ
ERZE11Fâ
thyristor CSG2001-14A04
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V7471U
Abstract: v7471 V7271U v14431u V7470 V9431 V10511U V10271 V14112U V10621U
Text: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D V • Features ■ Recommended Applications ■ Applicable Standards ■ Handling Precautions and Minimum Quantity / ● Large withstanding surge current capability in compact
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ERZV20D182
V7471U
v7471
V7271U
v14431u
V7470
V9431
V10511U
V10271
V14112U
V10621U
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E8471
Abstract: E14201 E8621 E14391 E11471 ZNR E14112 E11102 E14361 E14431 znr 431
Text: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.
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ZNR 471
Abstract: znr 431 ZNR 391 46 ERZV10D820 relay 3500 1210 241 ERZV14D621 ti8010 ZNR 361 znr 471 varistor TIM 500
Text: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D V “ZNR” Transient/Surge Absorber, Series V, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.
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2-150V
ERZV20D182
ZNR 471
znr 431
ZNR 391 46
ERZV10D820
relay 3500 1210 241
ERZV14D621
ti8010
ZNR 361
znr 471 varistor
TIM 500
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ZNR V10471U
Abstract: znr varistor v10471u ZNR V10511U V7471U znr -v14471u V10511U V10471U V14471U V7271U V14241U
Text: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D V • Features ■ Recommended Applications ● Large withstanding surge current capability in compact sizes ● Large “Energy Handling Capability” absorbing transient
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9005 triac
Abstract: ZNR2 znr3 varistor znr 431 E11911 ERZE11A znr 471 varistor ERZE11E E14201 znr panasonic
Text: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.
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2N6665
Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
Text: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed
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SL42E05
M220S
0001fl11
2N6665
MA42001-509
2N6665-509
MA42181-510
2n5054
RF NPN POWER TRANSISTOR C 10-50 GHZ
2N2857 Model
MA42001
ma42 transistor
2N3953
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BF512
Abstract: BF510 marking code 513
Text: Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and
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BF510)
BF511)
BF512)
BF513)
BF510
BF511
BF512
BF513
BF510
MAM33S
BF512
marking code 513
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Untitled
Abstract: No abstract text available
Text: BF510 to 513 _ / V _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the m iniature plastic envelope intended fo r applications up to the v.h.f, range in hybrid thick and th in -film circuits. Special
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BF510
BF510)
BF511)
BF512)
BF513)
BF511;
BF512
BF513;
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Untitled
Abstract: No abstract text available
Text: • £.b53531 002MLi21 ?TD H A P X N AUER PHILIPS/DISCRETE BF510 to 513 b?E D J V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended fo r applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special
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b53531
002MLi21
BF510
BF510)
BF511)
BF512)
BF513)
bb53531
D02MbE4
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Untitled
Abstract: No abstract text available
Text: BF621 BF623 _ / V SILICON EPITAXIAL TRANSISTORS • For video output stages P-N-P transistors in a microminiature plastic envelope intended for application in class-B video output stages in colour television receivers. N-P-N complements are BF620 and BF622 respectively.
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BF621
BF623
BF620
BF622
BF62S
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Untitled
Abstract: No abstract text available
Text: KSR1106 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=10Kii, R2=47Kii) • Complement to KSR2106 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSR1106
OT-23
10Kii,
47Kii)
KSR2106
10jiA,
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1545M
Abstract: No abstract text available
Text: h 7 > v 7* £ /Transistors 2SC1545M/2SC4017 Z5C 1545M A Q A ^ A J ^-u>h> ^ ^ Epitaxial Planar NPN Silicon Darlington Transistors Ü fÜ Î# iS ti/H ig h Gain Amp. * ^Jß-^-ÜEI/Dimensions (Unit : mm) 1) ? - ' ) > h > * £ * * ? * hFE T * 5 = hFE= 50000 (Typ.)
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2SC1545M/2SC4017
1545M
100mA)
1545M
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MA42181-510
Abstract: 2N5054 2N6665-509
Text: M a n A M P icom pany General Purpose Low Noise Bipolar Transistors V3.00 Case Styles Features • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed
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Untitled
Abstract: No abstract text available
Text: DTB113ZK Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm • available in an S M T 3 (SMT, S C -59 ) packa ge • p a cka g e m arking: D T B 1 13ZK; G 1 1 • a built-in b ias resistor a llow s inverter circuit configuration without external
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DTB113ZK
DTB113ZK
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Untitled
Abstract: No abstract text available
Text: _ J v _ BDT61;61A BDT61B;61C SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. P-N-P complements are BDT60, 60A, 60B and 60C.
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BDT61
BDT61B
BDT60,
BDT61
bbS3T31
0034bfll
7Z82097
QQ34bfl2
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