THYRISTOR SILICON CHIPS Search Results

CD4020A

Abstract: CA3059 schematic diagram 220v dc motor control CA3079 Zero Crossing Detector for 220V 50Hz
Contextual Info: EB CA3059, CA3079 Zero-Voltage Switches for 50Hz-60Hz and 400Hz Thyristor Control Applications PRELIMINARY April 1994 Features Description • Relay Control The CA3059 and CA3079 zero-voltage switches are mono­ lithic silicon integrated circuits designed to control a thyristor

CA3079

Abstract: CA3059 COUNTER IC CD4040 CA3097E 16 PIN COS IC CD4040 zero crossing detector 50Hz 230V AC zero crossing detector 50Hz 230v IC CD4040 DATASHEET OF IC CD4040 CA3058
Contextual Info: CA3059, CA3079 S E M I C O N D U C T O R Zero-Voltage Switches for 50Hz-60Hz and 400Hz Thyristor Control Applications June 1994 Features Description • Relay Control The CA3059 and CA3079 zero-voltage switches are monolithic silicon integrated circuits designed to control a thyristor

CA3059

Abstract: CA3058 zero crossing detector 50Hz 230v zero crossing detector 50Hz 230V AC CA3079 ca3059e 60Hz Zero Crossing Detector zero crossing detector ic with 230v CA3097E CD4020A
Contextual Info: ÎSI HARRIS U U CA3059 3 0 7 9 S E M I C O N D U C T O R Zero-Voltage Switches for 50-60Hz and 400Hz Thyristor Control Applications May 1992 Features Description • Relay Control The CA3059 and CA3079 zero-voltage switches are mono­ lithic silicon integrated circuits designed to control a thyristor In

C43059

Abstract: A3079 CD4020A
Contextual Info: 23 HARRIS C43059 C A 307 9 Zero-Voltage Switches For 5 0 /6 0 and 400H z Thyristor Control Applications August 1 9 9 1 Features D escription • Relay Control • O n -O ff Motor Switching The CA3059 and CA3079 zero-voltage switches are monolithic silicon integrated circuits designed to control a

Contextual Info: FRED, Rectifier Diode and Thyristor Chips in Planar Design Fast Recovery Epitaxial Diodes FRED Rectifier Diode and Thyristor Chips Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free-wheeling

Contextual Info: FRED, Rectifier Diode and Thyristor Chips in Planar Design Fast Recovery Epitaxial Diodes FRED Rectifier Diode and Thyristor Chips Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free-wheeling

BT thyristor

Abstract: thyristor BT thyristor bt 3A
Contextual Info: a ix Y S FRED, Rectifier Diode and Thyristor Chips in Planar Design Fast Recovery Epitaxial Diodes FRED Pow er switches (IG BT, M O S F E T , BJT, G T O ) for applications in electronics are only a s go o d a s their a sso ciated free­ wheeling diodes. At increasing switching frequencies, the pro­

BYX38-600

Abstract: germanium rectifier diode byx38 diode germanium varactor diode BYX38
Contextual Info: TYPE DESIGNATION J^ PRO ELECTRON TYPE DESIGNATION CODE FOR SEMICONDUCTOR DEVICES This type designation code applies to discrete semiconductor devices — as opposed to integrated circuits — , multiples of such devices and semiconductor chips. "Although not all type numbers accord with the Pro Electron system, the following explanation is given

din IEC 68

Abstract: 150a gto GTO 100A IXYS 40N60A D-68623 DWEP 17-12 DWEP DWlP 2580B L 7CG
Contextual Info: Contents Page Symbols and Definitions Nomenclature General Information Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types S-Series, SCSOA Capability, Fast Types

thyristor lifetime

Contextual Info: Thyristor / Diode Modules One of the essential advantages of power semiconductor modules compared to discrete designs is the electrical isolation between the baseplate of the module and the parts subject to voltage 3.6 kVRMS tested . This makes possible the mountdown of

Discrete Thyristor Chip

Contextual Info: Thyristor / Diode Modules One of the essential advantages of pow er sem iconductor modules com pared to discrete designs is the electrical isolation between the baseplate of the m odule and the parts subject to voltage 3.6 kV HMS tested . This m akes possible the m ountdow n of

thyristor lifetime

Abstract: all type of thyristor Discrete Thyristor Chip thyristor modules
Contextual Info: Thyristor / Diode Modules One of the essential advantages of power sem iconductor modules com pared to discrete designs is the electrical isolation between the baseplate of the module and the parts subject to voltage 3.6 kVRUS tested . This makes possible the mountdown of any number of the same or diffe­

thyristor lifetime

Contextual Info: / Thyristor Diode Modules One of the essential advantages of power semiconductor modules compared to discrete designs is the electrical isolation between the baseplate of the module and the parts subject to voltage 3.6 kVRMS tested . This makes possible the mountdown of

thyristor lifetime

Contextual Info: Thyristor / Diode Modules One of the essential advantages of power semiconductor modules compared to discrete designs is the electrical isolation between the baseplate of the module and the parts subject to voltage 3.6 kVRMS tested . This makes possible the mountdown of

thyristor phase control rectifier

Contextual Info: Chips, Direct Copper Bonding DCB and Direct Aluminium Bonding (DAB) Ceramic Substrates Power Semiconductor Chips IXYS has a wide range of chips for many electronic circuits. IGBT Chips Vc.3 vCE(Mt) •c G series, Low VCE(Bat) type G series, High Speed type

IXTD08N100P-1A

Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types

diode SKN molybdenum

Contextual Info: s e m ik r d n Section 15: SEMICELL Power Semiconductor Chips The following tables contain our standard types. Other types or selections are available on special request. Please contact your SEMIKRON office. SEMICELL® Rectifier Diode Chips , T^ es $ Y s k n 3

IXFd50n20

Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
Contextual Info: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type

triac bt151

Abstract: GTO thyristor BT151 Application notes "Power Semiconductor Applications" Philips TRIAC BT169D RC snubber dv/dt diode gto national semiconductor thyristor thyristor using zero crossing circuit Triacs form factors thyristor handbook bt151 thyristor Curve
Contextual Info: Philips Semiconductors Thyristors and Triacs Introduction NEW PRODUCTS applications where the 7.5 A rating of the BT151 is not required Types: BT300-500R, BT300-600R, BT300-800R . Philips Semiconductors are working intensively on bringing new products to the market to meet the

ABB thyristor 329-14

Abstract: ABB thyristor 410 thyristor 40590 ABB thyristor 5 CSR327-08 40576 CSR328-11 of reverse conducting thyristor CH-E3.40578.1
Contextual Info: V A B B 3 ÔE J> SEMICONDUCTORS AG CSR Reverse . Conducting Thyristors WÊI GaibflBfl 000003fci Ö O A B B CSR thyristors à conduction inverse Reverse Conducting Thyristors Rückwärtsleitende Thyristoren Thyristors à conduction inverse - Monolithic integration of fast

J6 MOSFET

Contextual Info: OIXYS Chips andDCB Ceramic Substrates Contents Page General Information for Chips J-2 IGBT Chips »c v « * CEM G-Series, Low VCE sat) type G-Series, High Speed type 6 0 0 -1200 V 6 0 0 -1200 V 10- 60 A 10- 100 A 1 .8 -3 .5 V 2 .5 -4 .0 V J-3 S-Series, Low VCE(sat) type

power triac circuit handbook

Contextual Info: Philips Semiconductors Thyristors and Triacs Introduction PHILIPS THYRISTORS AND TRIACS The Phase 2 Process The basic principle of using a PNPN structure to produce a thyristor, and a NPNPN structure with two PNPN’s in antiparallel to produce a triac has been known for

diode pj

Abstract: PJ 63 MM diode pj 66 diode pj 83 diode pj 29 diode pj 82 diode pj 56 diode pj 46 diode 40576 rapide
Contextual Info: A B B SEMICONDUCTORS AG 3ÖE CSR Reverse Conducting Thyristors CSR Rückwärtsleitende Thyristoren Reverse Conducting Thyristors Rückwärtsleitende Thyristoren - Thyristor und Diode auf einer Siliziumtablette - Platz- und Gewichtsersparnis - Höhere Betriebssicherheit

Contextual Info: Chips and DCB Ceramic Substrates Contents Page General Information for Chips J-2 IGBT Chips VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type