THT HR Search Results

Contextual Info: A Dimensions: [mm] B Recommended hole pattern: [mm] D Properties: Properties Test conditions Value Unit Tol. Shielding effectiveness @ 1 GHz Hardness 500MHz - 3GHz 60 dB max. HR30TM 58.03 C Assembly with THT Frame: E General information: •Storage Temperature: -20°C to 60°C

Contextual Info: A Dimensions: [mm] B Assembly with SMD Frame: D Properties: Properties Test conditions Value Unit Tol. Shielding effectiveness @ 1 GHz Hardness 500MHz - 3GHz 60 dB max. HR30TM 58.03 C Assembly with THT Frame: E General information: •Storage Temperature: -20°C to 60°C

Contextual Info: A Dimensions: [mm] B Recommended hole pattern: [mm] D Properties: Properties Test conditions Value Unit Tol. Shielding effectiveness @ 1 GHz Hardness 500MHz - 3GHz 60 dB max. HR30TM 58.03 C Assembly with THT Frame: E General information: •Storage Temperature: -20°C to 60°C

Contextual Info: A Dimensions: [mm] B Recommended hole pattern: [mm] D Properties: Properties Test conditions Value Unit Tol. Shielding effectiveness @ 1 GHz Hardness 500MHz - 3GHz 60 dB max. HR30TM 58.03 C Assembly with THT Frame: E General information: •Storage Temperature: -20°C to 60°C

Contextual Info: A Dimensions: [mm] B Assembly with SMD Frame: D Properties: Properties Test conditions Value Unit Tol. Shielding effectiveness @ 1 GHz Hardness 500MHz - 3GHz 60 dB max. HR30TM 58.03 C Assembly with THT Frame: E General information: •Storage Temperature: -20°C to 60°C

Contextual Info: A Dimensions: [mm] B Assembly with SMD Frame: D Properties: Properties Test conditions Value Unit Tol. Shielding effectiveness @ 1 GHz Hardness 500MHz - 3GHz 60 dB max. HR30TM 58.03 C Assembly with THT Frame: E General information: •Storage Temperature: -20°C to 60°C

Contextual Info: A Dimensions: [mm] B Assembly with SMD Frame: D Properties: Properties Test conditions Value Unit Tol. Shielding effectiveness @ 1 GHz Hardness 500MHz - 3GHz 60 dB max. HR30TM 58.03 C Assembly with THT Frame: E General information: •Storage Temperature: -20°C to 60°C

Contextual Info: A Dimensions: [mm] B Assembly with SMD Frame: D Properties: Properties Test conditions Value Unit Tol. Shielding effectiveness @ 1 GHz Hardness 500MHz - 3GHz 60 dB max. HR30TM 58.03 C Assembly with THT Frame: E General information: •Storage Temperature: -20°C to 60°C

Contextual Info: A Dimensions: [mm] B Recommended hole pattern: [mm] D Properties: Properties Test conditions Value Unit Tol. Shielding effectiveness @ 1 GHz Hardness 500MHz - 3GHz 60 dB max. HR30TM 58.03 C Assembly with THT Frame: E General information: •Storage Temperature: -20°C to 60°C

Contextual Info: A Dimensions: [mm] B Recommended hole pattern: [mm] D Properties: Properties Test conditions Value Unit Tol. Shielding effectiveness @ 1 GHz Hardness 500MHz - 3GHz 60 dB max. HR30TM 58.03 C Assembly with THT Frame: E General information: •Storage Temperature: -20°C to 60°C

Relais 12v DC

Abstract: Relais 12v Relais RELAIS REED sola reed relais
Contextual Info: Reed Technology Solutions Product Preview REED RELAYS REED SENSORS REED SWITCHES KT Serie – SMD & THT Reed Relais BESC HRE IBU NG Die KT-Relais Serie wurde speziell für Anwendungen entwickelt, in denen hohe Isolationen gefordert sind. Diese neue Relais Serie wird sowohl als

Contextual Info: H 0 4 -0 0 4 -0 7 Tht* material and the Information herein Is the property of Fuji Electric Co.Ltd. They shall be neither reproduced, copied, lent, or disclosed In any way whatsoever for the use of any third party, nor used for the manufacturing purposes without

Contextual Info: Micropower 8V, 100mA Low Dropout Linear Regulator with RESET and ENABLE D escription Tht* C S - 8 1 7 1 is a p r e c i s i o n 8 V, t i o n is a c t i v a t e d d u r i n g t h e p o w e r 100m A m ic ro p o w e r voltage reg u la­ tor w ith v e ry lo w q u ie s c e n t c u r re n t

MC6840

Abstract: M6800 MC68A40 MC68B40 mc668
Contextual Info: M OTOROLA SEMICONDUCTOR TECH N ICAL DATA MC6840 P rogram m able T im er M o d u le P TM The MCS840 is a p ro g ra m m a b le sub system co m p o n e n t o f th« M 6800 F a m ily d e sig n e d to prov>de va ria b le system tim e in te rva ls The M C6840 has th re e 16-tHt b in a ry co u n te rs. th re e co rre sp o n d in g c o n tro l re g is te rs , a n d a sla tu s

rte p 10

Contextual Info: 1 - Description PRODUCT SPECIFICATION December 2009 RTE LFG Issue 1-rev.B Ref. / PS-RTE-217 Page 4 / 7 2 - Construction Function Contact type Terminals 3 - Electrical data Min/max voltage Min/max current Dielectric strength : Contact resistance The RTE 04, 10 or 16 positions,

Contextual Info: DATA SHEET INCREMENTAL ENCODER TYPE E33 MAIN FEATURES HIGH PERFORMANCE ›› ›› ›› ›› ›› ›› ›› ›› ›› ›› Standard resolution 16 or 32 detent With or without integrated push button Rotational life: Up to 1,000,000 revolutions

Contextual Info: data sheet Encoder type E33 MAIN FEATURES High Performance ›› ›› ›› ›› ›› ›› ›› ›› ›› ›› 16 or 32 detent standard resolution With or without integrated push button Rotational life: Up to 1,000,000 revolutions Excellent indexing feel with 0.5, 1.5, 2.0, 2.5, 3.0,

AXICOM IM03

Abstract: AXICOM Relay im06 pioneer a201 AXICOM D2n V23105 24v AXICOM IM 43 JR relay AXICOM V23026 axicom v23105 AXICOM IM02 AXICOM Relay im06 12vdc AXICOM IM06
Contextual Info: Catalog 1308242 Issued 3-03 LOW-SIGNAL PC BOARD RELAYS Alphanumeric Index Series Type Page 159/160 . Mercury-Wetted Reed Relays . 308 Circuit Breakers . 101-124 1 Transformers. 201-212

HRD05003

Abstract: 4435 ic 4435 B input 8- 40V output 24v 4435 4435 m IC 4435 100-C GDQ4113 24v DC to 5V 3A converter
Contextual Info: SHINDENGEN ELECTRIC MFG. CO., LTD. New-ohtemachi Bldg. 2 -2 -1 Ohtemachi Chiyoda-ku, Tokyo 100 Japan Phone: 3-3279-4435 Fax: 3-3279-4493 HRD05003 Specifications 1. Maximum ratings Input Voltage 0 to 50 VDC Remote On/Off Terminals Impressed Voltaqe 0 to Vin-2V

Contextual Info: ROHM CO 4GE LTD m D 7 ñ 2 ñ cm Q0D3SS2 IC/Standard ICs BA704 BA707 ô HRHM BA704/BA707 T 3 ím ? \s ¥ ôL is - $ 2.65/3.3V Low-Voltage 2.65/3.3V Regulators - 58» M l - 13 • ¿'Hfé\fi&l3l/Dimensions (Unit : mm) BA704/BA707I1, faMK.I ' # a U - * t U T $]$§<* flfc

Contextual Info: P art N um b ers 8 NS 8 NS . 1Y . . . . P. HERMETIC CONNECTORS S erie s C h aracteristics S ta n d a r d s a n d S p e c ific a tio n s EDF - c la s s 1 E, C ate g o ry K2 L o c k in g S crew S h e ll M a t e r i a l F in is h S ta in le s s steel passivated

Contextual Info: Pan«l Mount Reeoptidleo Flingo Mount M ug Raoaptad* Cuturcd Cantor Corttoa JoWer ft* tonrtnt! M HNM W I * R in g * Mount Jock Roeoptooto I l M C* S 2 r I M AnMt M M /A-O O M Ino. H M Q M jr • 140 tO U tti A ^ h u i , Waltham, M A 02264 U S A ■ W M lg a — I

Contextual Info: ELECTRICAL CHARACTERISTICS: mil Turns Ratio: Line: Chip 1.32:1±3% @100KHz,50mV DC Resistance:Line Side 2.4 OhmsMax Chip Side 2.7 OhmsMax Inductance: Line Side 7.0-8.3mH @100KHz,50mV @25°C IDC=55mA Line Side Pins: 1-4 Transtek M a g n e t ic s M agnetics pioducts foi a cha ng ing woild.1*'

Contextual Info: ELECTRICAL CHARACTERISTICS: Turns Ratio: Line: Chip 1.65:1±3% @100KHz,50mV DC Resistance:Line Side 5.2 Ohms±15% Chip Side 3.0 Ohms±15% @25°C Inductance: Line Side 13.0-18.0mH @100KHz,50mV IDC=50mA Line Side Pins: 1-4 Hill Transtek M a g n e t ic s M agnetics pioducts foi a cha ng ing woild.1*'