THN6301E Search Results

THN6301E Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
THN6301E		AUK	SiGe NPN Transistor		Original	PDF

THN6301E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
121-351 Abstract: 35219 ic pt 2358 57290 76546 0 281 002 468 460-1 PIN CONFIGURATION IC 555 S 196 156 230 T125 Text: THN6301 Series SOT 523 Unit in mm NPN SiGe RF TRANSISTOR □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure Pin Configuration NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB Typ. @ f = 1 GHz, VCE = 8 V, IC =15 mA	Original	PDF	THN6301 OT343 OT523 THN6301KF OT323 THN6301Z THN6301U 000GHz 200GHz 121-351 35219 ic pt 2358 57290 76546 0 281 002 468 460-1 PIN CONFIGURATION IC 555 S 196 156 230 T125
transistor 2SC5066 Abstract: 2sc5066 2SC5067 BFP620 UPC2709 2SC5066 data sheet thn6601b 2SC5066 datasheet NESG260234 BFP450 Text: Cross Reference RF Product Cross Reference Tachyonics THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z THN450Z THN520Z THN620Z THN640Z THN4201E THN4201KF THN4201U THN4301E THN4301KF THN4301U THN4501E THN4501KF THN4501U THN6201E THN6201KF THN6201S THN6201U	Original	PDF	THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z THN450Z THN520Z THN620Z THN640Z transistor 2SC5066 2sc5066 2SC5067 BFP620 UPC2709 2SC5066 data sheet thn6601b 2SC5066 datasheet NESG260234 BFP450
44606 Abstract: 63817 76231 THN6301 THN6301E THN6301S THN6301U THN6301Z 58168 52174 Text: Semiconductor THN6301 Series SiGe NPN Transistor SOT-523 Unit in mm □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA	Original	PDF	THN6301 OT-523 OT-23 THN6301U OT-323 THN6301Z OT-343 THN6301E 000GHz 200GHz 44606 63817 76231 THN6301E THN6301S THN6301U THN6301Z 58168 52174

Catalog Datasheet

MFG & Type

PDF

Document Tags

121-351

Abstract: 35219 ic pt 2358 57290 76546 0 281 002 468 460-1 PIN CONFIGURATION IC 555 S 196 156 230 T125
Text: THN6301 Series SOT 523 Unit in mm NPN SiGe RF TRANSISTOR □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure Pin Configuration NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB Typ. @ f = 1 GHz, VCE = 8 V, IC =15 mA

Original

PDF

THN6301 OT343 OT523 THN6301KF OT323 THN6301Z THN6301U 000GHz 200GHz 121-351 35219 ic pt 2358 57290 76546 0 281 002 468 460-1 PIN CONFIGURATION IC 555 S 196 156 230 T125

transistor 2SC5066

Abstract: 2sc5066 2SC5067 BFP620 UPC2709 2SC5066 data sheet thn6601b 2SC5066 datasheet NESG260234 BFP450
Text: Cross Reference RF Product Cross Reference Tachyonics THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z THN450Z THN520Z THN620Z THN640Z THN4201E THN4201KF THN4201U THN4301E THN4301KF THN4301U THN4501E THN4501KF THN4501U THN6201E THN6201KF THN6201S THN6201U

Original

PDF

THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z THN450Z THN520Z THN620Z THN640Z transistor 2SC5066 2sc5066 2SC5067 BFP620 UPC2709 2SC5066 data sheet thn6601b 2SC5066 datasheet NESG260234 BFP450

44606

Abstract: 63817 76231 THN6301 THN6301E THN6301S THN6301U THN6301Z 58168 52174
Text: Semiconductor THN6301 Series SiGe NPN Transistor SOT-523 Unit in mm □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA

Original

PDF

THN6301 OT-523 OT-23 THN6301U OT-323 THN6301Z OT-343 THN6301E 000GHz 200GHz 44606 63817 76231 THN6301E THN6301S THN6301U THN6301Z 58168 52174