CCC-13
Abstract: BUT13
Text: 6115950 M IC ROSEMI 02E C OR P/ PO WER 05 00510 ]>e | bllS^SO 0DD0S10 5 CCC13 P ÏC T TECHNOLOGY 28 A, 600 V, NPN Darlington Power Transistor Chip • Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum Collector Al-Ti-Ni-Au
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0DD0S10
CCC13
emitter-15-mil
thickness-12
BUT13
CCC-13
BUT13
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Untitled
Abstract: No abstract text available
Text: O o' O LTl 12.00 ±0.10 b*d o z I □ I□ _ □ d I J 1.M A TER IA L: S H E L L : SPCC HOUSING: TH ER M O PLA STIC . G LA S S FIB E R F IL L E D . 1 U L 9 4 V - 0 R A T E D .C 0 L 0 R B L A C K . □ _ I f 0.70 NO TES: C O N T A C T : BRASS 9 /g \ 2 .P LA T IN G :
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THICKNESS-30
THICKNESS-120
THICKNESS-50
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Untitled
Abstract: No abstract text available
Text: 10 1E 7n +nnR -i7 -in M o le x LOGO □ A T E CODE SHELL HOUSING j'J CIRCUIT 4 cn j.n -ic CIRCUIT 1 oCTN Ln ^ e NOTES: 1. M ATERIAL: HOUSING: NYLON P A 9 T . FIBER G LASS FILLED. U L 9 4 V -0 . COLOR:BLACK. TERMINAL: PHOSPHOR BRONZE. M ETAL S H ELL: BRASS.
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THICKNESS-120
20GER
SD-48258-001
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Untitled
Abstract: No abstract text available
Text: 6115950 MICROSEMI C OR P/ PO WER oa Q2E 00522 D I - CCC2400 i»rr « T TECHNOLOGY 50 A, 600 V, NPN Darlington Power Transistor Chip • Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum Collector Al-Ti-Ni-Au ■ Assembly Recommendations:
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CCC2400
emitter-25-mil
thickness-12
PTC2400
300jj
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POWER TECHNOLOGY COMPONENTS
Abstract: PTC6062
Text: 6115950 MICROSEMI CORP/POWER 02E □2 00515 ~T-33- D 1 > F | bllS'ÏSG DDD0S15 1 I - "“ CCC6063 PTC TECHNOLOGY 20 A, 550 V, NPN Darlington Power TVansistor Chip • Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum Collector Al-Ti-Ni-Au
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T-33-
DDD0S15
CCC6063
emitter-15-mil
thickness-12
PTC6060
PTC6061
PTC6062
PTC6063
POWER TECHNOLOGY COMPONENTS
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Untitled
Abstract: No abstract text available
Text: 6115950 MI CRO SE MI 02E CORP/POWER □a 00516 D -r -3 3 -2 .9 D E l b l l S ^ S D 0 0 DD5 1 b 3 CCC10021A T X C J TECHNOLOGY 60 A, 350 V, NPN Darlington Power Transistor Chip • T riple Diffused, Glass Passivated ■ Contact M etallization: Base and em itter-alum inum
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CCC10021A
itter-15-m
thickness-12
10020/M
J10021
10021/M
J10021
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Untitled
Abstract: No abstract text available
Text: 61 1 59 50 MI CROSEMI CORP/POWER - !- OS 02E 00514 D 7 DE I b l l S T S D Q O G D s m ~'33~ZeT □ M~ CCC6003 TECHNOLOGY 15 A, 550 V, NPN Darlington Power Transistor Chip • Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum
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CCC6003
emitter-15-mil
thickness-12
PTC6000
PTC6001
PTC6002
PTC6003
300ns,
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TS-48037-001
Abstract: No abstract text available
Text: NOTES: 1.MATERIAL: SHELL: SPCC H0USIN0: THERMOPLASTIC, GLASS FIBER FILLED. UL 94V-0 RATED.COLOR BLACK. o z CONTACT: BRASS d UJ 1 Ui l W 3 2 j [35Ö1 A 1 0 .6 0 * 0.05 I-$-|o.o5M TYP.MÌ 11.60 12.7 0 ‘ 0.15 METAL SHELL: NICKEL ND.THICKNESS-120 MICROINCH MINIMUM.
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i-0-10
THICKNESS-30
THICKNESS-120
THICKNESS-50
PS-48
TS-48037-001
pk-48037-001
54603701s1
sd-46037-001
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Untitled
Abstract: No abstract text available
Text: 73115-5003 ENG. NO INTERFACE PER MOLEX STANDARD CADFILE NO.S1155003.DGM SIMILAR ITEM EDP NO. E S -7 3 5 9 9 -0 0 0 0 NUT ( LOCK WASÆR ) CONSTRUCTION: CONNECTOR BODY . DIELECTRIC. . CENTER CONTACT. LOCK WASHER-— . NUT — .
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S1155003
THICKNESS12
SPA-73115-5003
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Untitled
Abstract: No abstract text available
Text: 10 2.50 2.00 2.50 CIRCUIT -CIRCUIT 1 M ETAL SH ELL HOUSINGCIRCUIT 4- NOTES: P.C.B EDGE- 1. MATERIAL: 01.10 TYP.2 U L 9 4 V -0 , COLOR: BLACK. SHELL: COLD ROLLED STEEL. RECOMMENDED P.C.B LAYOUT GENERAL TO LER AN C E* 0.05 LD O 12 HOUSING: NYLON 46, GLASS FIBER FILLED,
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THICKNESS-120
20GER
SD-48037-004
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MJ10025
Abstract: No abstract text available
Text: 02E 0 0 5 2 0 6 1 1 5 9 50 MICROSEMI CORP/POWER □E D T - ^ 3 ' Z 9 tÊ JtH SISO □ □ Q Q 52Q CCC9002 'r X C T TECHNOLOGY 10 A, 950 V, NPN Darlington Power Transistor Chip • Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum
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CCC9002
emitter-15-mil
thickness-12
PTC9000/MJ10024
PTC9001/MJ10025
PTC9002
MJ10025
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A02E
Abstract: No abstract text available
Text: 6 1 15950 M I C R O S E M I 02E 0051 1 CORP/POWER BB—o a D D FJbllS^SD " 7 *^ 33 DDDDS11 * 2 *7 4 CCC14 24 A, 850 V, NPN Darlington Power TVansistor Chip • Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emilter-aluminum Collector Al-Ti-Ni-Au
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DDDDS11
CCC14
emiuer-15-mil
thickness-12
A02E
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Untitled
Abstract: No abstract text available
Text: NOTES: 1.M ATERIAL: S H E LL: SPCC 12 . H 0U S IN 0: THER M O PLA STIC , G LA SS FIBER F IL L E D . U L 9 4 V - 0 R A T E D .C 0 L 0 R BLACK. o z d 1 w l w 111 3 2 A r f 0.70 C O N TA C T: BRASS 2.PLA TIN G : TERMINAL: 0 . 6 0 * 0-05 W\o.Q5\A 11.60 12.70‘ 0.15
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THICKNESS-30
THICKNESS-120
THICKNESS-50
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CCC-15
Abstract: BUT15
Text: 6115950 M ICRO SE MI CORP/POWER. OS DE _ 0 2E 0 0 5 1 3 D -T b l l S ^ S O D0GG513 Ö | [ CCC15 "P X C T TECHNOLOGY 20 A, 1000 V, NPN Darlington Power TVansistor Chip • Triple Diffused, Glass Passivated .250" 6.4mm ■ Contact Metallization: Base and emitter-aluminum
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D0GG513
CCC15
Thickness-12
BUT15
CCC-15
BUT15
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